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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Neutronics analysis of spin-polarized fuel in spherical tokamaks

The effect of spin-polarized deuterium–tritium fuel on the blanket, magnets, and surrounding structures is analyzed for a spherical tokamak fusion power plant. The focus of this paper is the neutron flux distribution in the fusion device and the corresponding engineering considerations, such as tritium breeding ratio (TBR) and magnet fluence. Significant benefits were found for anti-aligned polarization: a 2.7% increase in the total TBR (which could increase significantly with further optimization) and an approximately 68% increase in the magnet lifetime. If the inboard breeding blanket can be replaced with extra shielding and magnets, then it could significantly increase fusion power with no loss of magnet lifetime. This would be accomplished by increasing the toroidal field strength.

fusion↗
DOE OSTI2021

Thermodynamics of Light Management in Near-Field Thermophotovoltaics

We evaluate near-field thermophotovoltaic (TPV) energy-conversion systems focusing in particular on their open-circuit voltage (V OC ). Unlike previous analyses based largely on numerical simulations with fluctuational electrodynamics, here, we develop an analytic model that captures the physics of near-field TPV systems and can predict their performance metrics. Using our model, we identify two opportunities of TPV systems operating in the near field. First, we show analytically that enhancement of radiative recombination is a natural consequence of operating in the near field. Second, we note that, owing to photon recycling and minimal radiation leakage in near-field operation, the PV cell used in near-field TPV systems can be much thinner compared to those used in solar PV systems. Since nonradiative recombination is a volumetric effect, use of a thinner cell reduces nonradiative losses per unit area. The combination of these two opportunities leads to increasingly large values of V OC as the TPV vacuum gap decreases. Hence, although operation in the near-field was previously perceived to be beneficial for electrical power-density enhancement, here, we emphasize that thin-film near-field TPVs are also significantly advantageous in terms of V OC and consequently conversion efficiency as well as power density. We provide numerical results for an InAs-based thin-film TPV that exhibits efficiency >50% at an emitter temperature as low as 1100 K.

42 ENGINEERING↗
DOE OSTI2025

Ultrafast exciton and trion dynamics in highly 𝑛-doped Mo⁢S 2 monolayers: Many-body effects

Understanding many-body interactions of excitons and charge carriers in monolayer semiconductors is crucial for tuning their unique optical properties and optimizing their performance in optoelectronic devices. However, the sensitivity of these atomically thin semiconductors to doping, defects, and strain–arising from synthesis, substrate, and environmental conditions–hinders consistent observation of many-body effects. In this work, we employed linear and ultrafast transient optical absorption spectroscopy to investigate the influence of background doping on exciton many-body interactions in Mo⁢S 2 monolayers. Using reversible molecular physisorption gating, we achieved a high background doping density of 4.9 × 10 13 c⁢m −2 in an argon environment, which is significantly higher than those attainable with conventional electrical gating. Our results reveal a photoinduced 𝐴-exciton resonance redshift, attributed to band-gap renormalization at a low background-doping density of 4.3 × 10 12 c⁢m −2 in an air environment, transitioning to a blueshift at a high background-doping density of 4.9 × 10 13 c⁢m −2 due to dominant Pauli blocking effects and vertical excitation shifts. We further observed transient energy splitting between free-exciton and -trion states up to 57 meV due to exciton-electron interactions. The ultrafast spectroscopy further revealed exciton and trion dynamics, including fast energy splitting of exciton and trion resonances within 1 picosecond (ps) followed by a rapid decay having a lifetime of ∼5.4 ps. Furthermore, our results demonstrate the critical role of background-doping conditions in tuning many-body interactions and quasiparticle dynamics in 2D semiconductors, providing valuable insights for future device design and material engineering.

Doped semiconductors↗
DOE OSTI2025

Eliminating Surface Oxides of Superconducting Circuits with Noble Metal Encapsulation

The lifetime of superconducting qubits is limited by dielectric loss, and a major source of dielectric loss is the native oxide present at the surface of the superconducting metal. Specifically, tantalum-based superconducting qubits have been demonstrated with record lifetimes, but a major source of loss is the presence of two-level systems in the surface tantalum oxide. Here, we demonstrate a strategy for avoiding oxide formation by encapsulating the tantalum with noble metals that do not form native oxide. By depositing a few nanometers of Au or AuPd alloy before breaking vacuum, we completely suppress tantalum oxide formation. Microwave loss measurements of superconducting resonators reveal that the noble metal is proximitized, with a superconducting gap over 80% of the bare tantalum at thicknesses where the oxide is fully suppressed. Further, our findings suggest that losses in resonators fabricated by subtractive etching are dominated by oxides on the sidewalls, pointing to total surface encapsulation by additive fabrication as a promising strategy for eliminating surface oxide two-level system loss in superconducting qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Acceptor-Induced Bulk Dielectric Loss in Superconducting Circuits on Silicon

The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLSs). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In this work, we show that boron acceptors in silicon constitute a TLS bath that leads to an energy dissipation channel for superconducting circuits. We discuss how the electronic structure of boron acceptors leads to an effective TLS response in silicon. We sweep the boron concentration in silicon and demonstrate the bulk dielectric loss limit from boron acceptors. We show that boron-induced dielectric loss can be reduced in a magnetic field due to the spin-orbit structure of boron. This work provides the first detailed microscopic description of a TLS bath for superconducting circuits and demonstrates the need for ultrahigh-purity substrates for next-generation superconducting quantum processors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Construction of Cryogen-Free 4.3T Superconducting Wiggler for NSLS-II Ring

With the 3 GeV electron beam energy for the National Synchrotron Light Source II (NSLS-II) ring, only superconducting wigglers (SCW) producing greater than 4T peak field can cover the photon energy range of 20 keV and 200 keV with sufficient number of photons. The High energy Engineering X-ray (HEX) Diffraction beamline, which is primarily funded by the New York State Energy Research and Development Authority (NYSERDA) and NSLS-II, will be equipped with a 1.2m-long SCW with 70 mm period length and 4.3 T on-axis field. This SCW is free from the use of liquid Helium and is cooled only with cryo-coolers. The Electron Beam Chamber (EBC) with vertical aperture of 8 mm is made from 316LN stainless steel and copper plating is applied both surface and +-12.5mm wide from the center in the inner surface. The expected heat load from the electron beam of the NSLS-II ring is estimated to be 10 W/m. Here, we describe the design principles and engineering challenges for the device.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, and other applications due to its ultra- wide bandgap and low projected fabrication cost of high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles. Successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, providing opportunities for predictive process simulation. We use first-principles defect equilibrium calculations to simulate a 3-step growth- annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen- oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. This type converted Ga2O3 can create significant built-in field in a p-n junction with an adjoining n-type material and could enable vertical MOSFETs.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
DOE OSTI2025

Fusing Edge Computing with Transport Security by Leveraging the Controller Area Network Transport Security Tracking and Reporting (C-STAR) Unit

Rapid advances in embedded system complexity and capability provides exciting opportunities for transportation security deployment. Manufacturers and developers of these embedded systems continue to provide lower cost and more powerful solutions that can be leveraged by researchers and engineers. Furthermore, deploying these devices at the “edge” of the Internet-of-Things (IoT) infrastructure provides opportunities for highly capable applications in transport security. In an edge computation architecture, the device is co-located at the source of the data in the larger IoT structure – this provides computational capability at the location directly where the data is collected. For shipment transport security, this provides a direct compute node for digestion of data and mitigation actions in real-time. In our application, the vehicle provides a significant amount of this data that can be processed in real-time via the Controller Area Network Transport Security Tracking and Reporting (C-STAR) edge device. Utilization of a computational node located on the vehicle, such as the C-STAR, capitalizes on previously discussed opportunities of edge architectures. In this paper, we will discuss this security solution’s usability, current deployments, and scalability to further applications in transport security. First, we will cover the supported vehicle platforms that can leverage the C-STAR technology. This will be particularly relevant to medium- and heavy-duty vehicles transporting high-risk shipments. Second, we will speak to current deployments of the C-STAR that are ongoing. Finally, we will discuss additional areas for expansion such as maturing the onboard algorithms through continuing collaborations.

Cook, Adian [ORNL] (ORCID:0000000160825395)↗
DOE OSTI2020

Thermophotovoltaic Heat Engine

This project was aimed at developing a thermophotovoltaic device that efficiently converts thermal radiation to electrical power. Historically, TPV devices have been plagued by poor robustness; this project sought to overcome this by merging innovations in nanophotonics, photovoltaics, and robust thermal engineering. Efforts were focused on developing high efficiency TPV devices which may drastically alter the electricity sector by enabling efficient (> 20%), fuel-flexible (any combustion fuel), distributed (< 10 kW) power generation. The project research identified the technical performance limits, technology differentiator, and customer value proposition for TPV devices and established technical performance requirements for a minimum viable product.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Hierarchical and scalable integration of nanostructures for energy and environmental applications: a review of processing, devices, and economic analyses

Hierarchical nanostructure, an engineered nanostructure with a higher assembly-level of constituents by low dimensional nano-building blocks, has received extensive attentions in the latest advancements in nanomaterial science and nanotechnology development. The ordered hierarchical nanostructures could offer merits such as more active sites, synergistic properties owing to their geometric complexity and building blocks variation, as well as the resultant multi-functional capabilities. In this review, we specifically focus on the integration approaches that may be feasible for large-scale production and manufacturing of engineered nanomaterials for various industrial applications, and the design criteria of hierarchical nanostructures targeted at various sustainable energy and environmental applications. In addition to chemical synthesis and integration methods, the development and application of hierarchical nanostructures are surveyed in energy conversion, generation, storage, utilization, and sensing devices. Meanwhile, a much-needed survey is also touched upon the techno-economic analyses of engineered nanomaterials, proposing the need of establishing various standard protocols on various factors and parameters that could be envisaged as a guide toward the viable transition to the practices in the future nano-industries.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

UV-Enabled Defect Engineering in Multilayer GaSe and InSe and UV Writing of the Grating Pattern

III–VI post-transition-metal chalcogenides are layered semiconductor materials that exhibit direct band gaps in multilayers. Defect engineering is essential in 2D layered semiconductors for functional devices. Here, in this work, we report defect engineering in multilayer gallium selenide (GaSe) and indium selenide (InSe), where defects generated by ultraviolet (UV, 325 nm) laser irradiation result in an additional photoluminescence (PL) line. The additional PL line is due to defect-bound excitons. Characteristics of the defect emission are similar in GaSe and InSe samples subjected to UV irradiation, air annealing, and hydrostatic pressure. Two-beam UV interference was applied to create grating patterns with a periodic array of low and high densities of defects in GaSe. Density functional theory has identified the defect type in GaSe. The results provide valuable insights into defect generation and UV scribing of photonic circuits in 2D Se-based multilayers for optical integration in a 2D platform.

2D multilayered materials↗
DOE OSTI2026

Tantalum alloy–based resonators for quantum information systems

Utilizing tantalum (Ta) in superconducting circuits has led to significant improvements, such as high qubit lifetime (T 1 ) and quality factors in both qubits and resonators, suggesting that material optimization plays an important role in the development of superconducting circuits. Thus we here explore superconducting gap engineering in Ta-based devices as a powerful strategy for expanding the range of suitable host materials. By alloying 20 atomic percent (at.%) hafnium into Ta thin films, we achieve a superconducting transition temperature (T c ) of 6.09 K as observed in direct current (DC) transport measurements, reflecting an increase in the superconducting gap. We systematically vary deposition conditions to control film orientation and transport properties of Ta-Hf alloy thin films. We then confirm the enhancement in T c via microwave measurements at millikelvin temperatures. We verify the ~40 increase in T c relative to bare Ta devices, while the loss contributions from two-level systems and quasi-particles remain unchanged in the low temperature regime. These findings emphasize the promise of material engineering in superconducting circuits and point to many potential material candidates for further exploration.

Ta-Hf alloy thin films↗
DOE OSTI2022

Surfactant Engineering and Its Role in Determining the Performance of Nanoparticulate Organic Photovoltaic Devices

The fabrication of organic photovoltaics (OPVs) from non-hazardous nanoparticulate (NP) inks offers considerable promise for the development of ecofriendly large-scale printed solar modules. However, the typical NP core-shell morphology (driven by the different donor/acceptor affinities for the surfactant used in NP synthesis) currently hinders the photovoltaic performance. As such, surfactant engineering offers an elegant approach to synthesizing a more optimal intermixed NP morphology and hence an improved photovoltaic performance. In this work, the morphology of conventional sodium dodecyl sulfate (SDS) and 2-(3-thienyl) ethyloxybutylsulfonate (TEBS)-stabilized poly(3-hexylthiophene) (P3HT) donor:phenyl-C 61 -butyric acid methyl ester (PC 61 BM) acceptor NPs is probed using scanning transmission X-ray microscopy, UV-vis spectroscopy, grazing-incidence X-ray diffraction, and scanning electron microscopy. While the SDS-stabilized NPs exhibit a size-independent core-shell morphology, this work reveals that TEBS-stabilized NPs deliver an intermixed morphology, the extent of which depends on the particle size. Consequently, by optimizing the TEBS-stabilized NP size and distribution, NP-OPV devices with a power conversion efficiency that is ~50% higher on average than that of the corresponding SDS-based NP-OPV devices are produced.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Power management for hybrid electric vehicles

A system and method for power management of hybrid electric vehicles is provided. In some implementations, a plug-in series hybrid electric vehicle may include an engine, a motor/generator (MG), a traction motor, an energy storage device, and a controller. The controller is coupled to the engine and the MG to control operation of the engine and the MG such that a state-of-charge (SOC) of the energy storage device tracks a dynamic reference SOC profile during a trip and an average engine power (AEP) is maintained above a threshold. In some instances, maintaining AEP above a threshold supports emission control of the vehicle.

Le, Dat Duc↗
DOE OSTI2023

Intrinsic and Extrinsic Factors Influencing the Dynamics of VO 2 Mott Oscillators

Oscillatory devices have gained significant interest recently as key components of computing systems based on biomimetic neuronal spiking. An understanding of the time scales underlying the spiking is essential for engineering fast, controllable, low energy devices. However, we find that the intrinsic dynamics of these devices are difficult to properly characterize, as they can be heavily influenced by the external circuitry used to measure them. Here we demonstrate these challenges using a VO 2 Mott oscillator with a sub-100 nm effective size, achieved using a nanogap cut in a metallic carbon nanotube electrode. Given the nanoscale thermal volume of this device, it would be expected to exhibit rapid oscillations. However, due to external parasitics present within commonly used current sources, we see orders of magnitude slower dynamics. Here, we outline methods for determining when measurements are dominated by extrinsic factors and discuss the operating conditions under which intrinsic oscillation frequencies may be observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Acoustic focusing of microplastics in microfabricated and steel tube devices: An experimental study on the effects from particle size and medium density

The contamination of aquatic systems with microplastics is becoming a severe threat to living organisms. Microplastics found in the environment consist of a wide range of particle sizes thus give rise to several challenges to current purification methods. Acoustic focusing has been utilized as a particle concentrating method in biological and non-biological applications. In this study, we investigate the feasibility of using acoustic focusing technology to isolate microplastics in aqueous samples and find that a two-stage mechanism is essential to concentrate microplastics of wide size ranges of the same material. We demonstrate for the first time experimentally that when the particle size is comparable to the resonance wavelength, they deviate from typical pressure nodal focusing and show pressure antinodal focusing. Further, we have expanded microplastics isolation beyond microfluidic systems and demonstrate their extraction capabilities relatively at higher flow rates using microplastics of polystyrene, polyethylene, and polymethyl methacrylate ranging from 6 µm to 300 µm diameter and in devices fabricated with cylindrical steel tubes. We could extract 70% of microplastics smaller than 180 µm and 82% of microplastics greater than 180 µm in diameter from an aqueous sample at a flow rate of 12 mL/min. In conclusion, we demonstrate that small microplastics focus on acoustic pressure nodes regardless of the medium density. However, focusing of large microplastics of the same material depends on the medium density.

42 ENGINEERING↗