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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Characterization of dangling bond defects at the crystalline Si/SiO x interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiO x /polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm 2 TOPCon-like mini solar cells with edge passivation alongside larger 4 cm 2 sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, J o , values of 40 and 310 fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (P b0 and P b centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiO x interface. The EDMR signals were lower for the cell with a lower value of J o , while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Electrochemical Properties of Commercially Pure Ti with TiB/TiB{sub 2} Coatings in Hanks’ Balanced Salt Solution

In this study, in order to evaluate the electrochemical performance of different titanium boride coatings created on the commercially pure titanium (CP-Ti), distinct electrochemical assays in Hanks’ balanced salt solution at 37 °C were conducted using pack cementation method. The results showed that the boriding at 900 and 1000 °C for 3 h creates the TiB whiskers and TiB whiskers/TiB{sub 2} dense layer on the top of the commercially pure titanium surface, respectively. It was also found that not only borides coating had good adhesion on the substrate, but also that improved the titanium hardness more than five times. Polarization plots clarified the passive behavior of borided specimens. Impedance spectroscopy tests indicated the acceptable corrosion behavior of the borided specimens in Hanks’ balanced salt solution. Mott–Schottky measurements indicated that the passive layers formed on the commercially pure titanium and the borided specimens had doped n-type semiconductor properties. Mott–Schottky measurements displayed that the donor density of the passive layers decreased with the rising time as well. Finally, because of better surface conditions to make a less defective and more protective passive layer, the borided specimen at 900 °C in comparison with the borided specimen at 1000 °C was shown to be the more suitable choice for bioimplant applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Air Passivation of Chalcogen Vacancies in Two‐Dimensional Semiconductors

Abstract Defects play important roles in semiconductors (SCs). Unlike those in bulk SCs, defects in two‐dimensional (2D) SCs are exposed to the surrounding environment, which can potentially modify their properties/functions. Air is a common environment, yet its impact on the defects in 2D SCs still remains elusive. Here we study the interaction between air and chalcogen vacancies (V X ), the most typical defects in 2D SCs. Although the interaction is weak for most molecules in air, O 2 can be chemisorbed at V X with a barrier that correlates with the SC cohesive energy and can be overcome even at room temperature for certain SCs. Importantly, the chemisorbed O 2 changes the V X from commonly believed harmful carrier‐traps to electronically benign sites. This unusual behavior originates from the isovalence between O 2 and X when bonded with metal. Based on these findings, a facile approach is proposed to improve the performance of 2D SCs by using air/O 2 to passivate the defects.

Liu, Yuanyue↗
NASA NTRS1990

Viewing Integrated-Circuit Interconnections By SEM

Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

Lawton, Russel A.↗
DOE OSTI2023

Incorporating Potassium Citrate to Improve the Performance of Tin‐Lead Perovskite Solar Cells

Abstract Easy‐to‐form tin vacancies at the buried interface of tin‐lead perovskites hinder the performance of low‐bandgap perovskite solar cells (PSCs). Here, a synergistic strategy by incorporating potassium citrate (PC) into the poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole‐transport layer to passivate the buried interface of Sn‐Pb PSCs is reported. PC neutralizes the acidity of PEDOT:PSS and stabilizes the perovskite front surface, enhancing device stability. Citrate moieties coordinate with Sn 2+ on the buried perovskite surface, preventing Sn 2+ oxidation and suppressing defect formation. Additionally, potassium cations incorporate into Sn‐Pb perovskites, enhancing crystallinity and passivating halide defects. The combined benefits enable efficient low‐bandgap Sn‐Pb PSCs with a power conversion efficiency of 22.7% and a high open‐circuit voltage of 0.894 V. Using this method, 26.1% efficiency for all‐perovskite tandem solar cells is demonstrated. These results emphasize the significance of buried interface passivation in developing efficient and stable Sn‐Pb PSCs and all‐perovskite tandem solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Crown Ether Modulation Enables over 23% Efficient Formamidinium-Based Perovskite Solar Cells

The use of molecular modulators to reduce the defect density at the surface and grain boundaries of perovskite materials has been demonstrated to be an effective approach to enhance the photovoltaic performance and device stability of perovskite solar cells. Herein, we employ crown ethers to modulate perovskite films, affording passivation of undercoordinated surface defects. This interaction has been elucidated by solid-state nuclear magnetic resonance and density functional theory calculations. The crown ether hosts induce the formation of host-guest complexes on the surface of the perovskite films, which reduces the concentration of surface electronic defects and suppresses nonradiative recombination by 40%, while minimizing moisture permeation. As a result, we achieved substantially improved photovoltaic performance with power conversion efficiencies exceeding 23%, accompanied by enhanced stability under ambient and operational conditions. This work opens a new avenue to improve the performance and stability of perovskite-based optoelectronic devices through supramolecular chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Evidence of topological charge polarization at active-passive interfaces in acoustically powered active liquid crystals

Theoretical and computational studies predict topological charge separation at active-passive interfaces in active nematics, but reliable experimental validation has been lacking. We utilize a synthetic acoustically energized liquid crystal to experimentally investigate the dynamics of topological defects across an active-passive interface. The interference pattern induced by the acoustic wave inside the experimental cell creates a spatial distribution of activity, resulting in the formation of active-passive interfaces with the liquid-crystalline director field aligned parallel to those interfaces. The activity gradient drives the reorientation of positively charged topological defects along its direction, causing them to migrate into the passive zone and form a layer with net topological charge. That layer “discharges” upon cessation of activity through annihilation of positive and negative topological charges, resembling the discharge of a capacitor.

Active defects↗
DOE OSTI2013

Dual passivation of GaAs (110) surfaces using O{sub 2}/H{sub 2}O and trimethylaluminum

The nucleation and passivation of oxide deposition was studied on defect-free GaAs (110) surfaces to understand passivation of surfaces containing only III-V heterobonds. The passivation process on GaAs (110) was studied at the atomic level using scanning tunneling microscopy while the electronic structure was determined by scanning tunneling spectroscopy (STS). The bonding of the oxidant and reductant were modeled with density functional theory. To avoid Fermi level pinning during gate oxide atomic layer deposition, a dual passivation procedure was required using both a reductant, trimethylaluminum (TMA), and an oxidant, O{sub 2} or H{sub 2}O. Dosing GaAs (110) with TMA resulted in the formation of an ordered complete monolayer of dimethylaluminum which passivates the group V dangling bonds but also forms metal-metal bonds with conduction band edge states. These edge states were suppressed by dosing the surface with oxidants O{sub 2} or H{sub 2}O which selectively react with group III-aluminum bonds. The presence of an ordered Al monolayer with a high nucleation density was indirectly confirmed by XPS and STS.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Defect phase diagram for doping of Ga 2 O 3

For the case of n-type doping of β-Ga 2 O 3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO 2 ), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO 2 ) conditions. Considering further the stability constraints due to sublimation of molecular Ga 2 O, specific predictions of optimized pO 2 and Si dopant concentrations are given. To conclude, the incomplete passivation of dopant-defect complexes in β-Ga 2 O 3 suggests a design rule for metastable doping above the solubility limit.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Effects of temperature and pH on the electrochemical behaviour of alloy 600 in simulated pressurized water reactor primary water

The effects of temperature and pH on the electrochemical properties of Alloy 600 were studied in oxygenated borate buffer solutions by the measurements of open circuit potential (OCP), anodic potentiostatic polarization, Mott-Schottky analysis (MSA), and electrochemical impedance spectroscopy (EIS). At each temperature and pH, the stabilized anodic passive current density was independent of the formation potential, and the slope of the M - S plot for the passive film formed at +0.3 V OCP (OCP + 0.3 V) is positive, indicating that the passive films formed on Alloy 600 have n-type semiconductor character. With increasing temperature (in each solution), the OCP and the impedance modulus decreased, while the passive current density and the defect density calculated from MSA increased, indicating a significant reduction in corrosion resistance. With the increase in pH value, the passive current density decreased, the absolute value of impedance increased slightly, revealing a slight increase in corrosion resistance. According to the optimization of Mixed Potential Model (MPM) on the experimentally measured EIS data for Alloy 600 at OCP and +0.3 V OCP , a series of fundamental parameters related to the micro-characteristic of passive film were extracted. In the barrier layer of the passive film, the concentration of cation interstitials is much higher than that of anion vacancies, indicating that the former was a dominant defect. With increasing temperature, the linear increase in the defect density and film thickness resulted in a linear increase of the anodic current density. However, with increasing pH, the decrease of defect density and the slight increase of film thickness caused a linear reduction in anodic current density. Elevated temperature has a more significant deterioration effect on the corrosion resistance of Alloy 600 than the increased pH value. Additionally, all the kinetics parameters describing the generation of cation interstitials and oxygen vacancies at the substrate/film were obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Density Functional Theory Study of the Initial Stages of Cl-Induced Degradation of α -Cr 2 O 3 Passive Film

The ion exchange and point defect models are two prominent models describing the role of anions, such as chlorides, in the degradation of passive oxide films. Here the thermodynamic feasibility of critical steps of Cl-induced degradation of a hydroxylated α-Cr 2 O 3 (0001) surface, as proposed by these two models, are studied. Both models begin with Cl substitution of surface OH and H 2 O, which becomes less favorable with increasing Cl coverage. The initial stages of Cl-induced breakdown of the α-Cr 2 O 3 depend on Cl coverage and the presence of O vacancy near the surface as follows: (1) neither Cl insertion (supporting the ion exchange model) nor Cr vacancy formation (supporting the point defect model) is feasible at low Cl coverages except in the presence of O vacancies near the surface, where Cl insertion is thermodynamically feasible even at low coverages, (2) in the absence of O vacancies, Cr vacancy formation becomes feasible from 10/12 ML onwards whereas Cl insertion by exchange with subsurface OH only becomes feasible at full coverage. This implies that at higher coverages Cl-induced degradation first initiates through a vacancy formation mechanism, but both insertion and vacancy formation would be feasible at full coverage.

36 MATERIALS SCIENCE↗
DOE OSTI2019

A Closer Look at Fe(II) Passivation of Goethite

Our understanding of how Fe(II) reacts with Fe(III) oxides has evolved significantly based on evidence for electron transfer at the oxide-water interface and Fe(II)-catalyzed recrystallization. Recent experiments, as well as computational calculations, further suggest that defects at oxide surfaces can facilitate electron transfer. There is, however, some evidence that these processes cease after continued contact with Fe(II). Here, we explore the sustainability of these processes over longer time frames by measuring whether exposure to Fe(II) inhibits Fe(II)-goethite electron transfer, and whether this inhibition is reversible. To quantify the extent of electron transfer, we used selective isotope labeling with 57Fe Mössbauer spectroscopy. The results revealed that pre-reacting goethite with Fe(II) decreases the extent of electron transfer during subsequent exposures, and that less electron transfer occurs with increasing reaction time. Similarly, X-ray absorption spectroscopy and magnetic circular dichroism suggest that reaction with Fe(II) consumes surface defects and forms a passivation layer, making goethite less susceptible to electron transfer. When Fe(II) is removed by either wet chemical extraction or oxidation, electron transfer is mostly restored, suggesting that inhibition of electron transfer is reversible. Our results show that in environmental systems, which are commonly subjected to transient geochemical fluctuations, electron transfer between Fe(II) and Fe oxides, and processes linked to it, are likely to be relevant beyond just short time scales.

Andrade de Notini, Luiza↗
DOE OSTI2011

Scintillation of rare earth doped fluoride nanoparticles

The scintillation response of rare earth (RE) doped core/undoped (multi-)shell fluoride nanoparticles was investigated under x-ray and alpha particle irradiation. A significant enhancement of the scintillation response was observed with increasing shells due: (i) to the passivation of surface quenching defects together with the activation of the REs on the surface of the core nanoparticle after the growth of a shell, and (ii) to the increase of the volume of the nanoparticles. These results are expected to reflect a general aspect of the scintillation process in nanoparticles, and to impact radiation sensing technologies that make use of nanoparticles.

36 MATERIALS SCIENCE↗
DOE OSTI2013

The effect of microscopic texture on the direct plasma surface passivation of Si solar cells

Textured silicon surfaces are widely used in manufacturing of solar cells due to increasing the light absorption probability and also the antireflection properties. However, these Si surfaces have a high density of surface defects that need to be passivated. In this study, the effect of the microscopic surface texture on the plasma surface passivation of solar cells is investigated. The movement of 10{sup 5} H{sup +} ions in the texture-modified plasma sheath is studied by Monte Carlo numerical simulation. The hydrogen ions are driven by the combined electric field of the plasma sheath and the textured surface. The ion dynamics is simulated, and the relative ion distribution over the textured substrate is presented. This distribution can be used to interpret the quality of the Si dangling bonds saturation and consequently, the direct plasma surface passivation.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Directional charge transfer mediated by mid-gap states: A transient absorption spectroscopy study of CdSe quantum dot/β-Pb 0.33 V 2 O 5 heterostructures

For solar energy conversion, not only must a semiconductor absorb incident solar radiation efficiently but also its photoexcited electron—hole pairs must further be separated and transported across interfaces. Charge transfer across interfaces requires consideration of both thermodynamic driving forces as well as the competing kinetics of multiple possible transfer, cooling, and recombination pathways. In this work, we demonstrate a novel strategy for extracting holes from photoexcited CdSe quantum dots (QDs) based on interfacing with β-Pb 0.33 V 2 O 5 nanowires that have strategically positioned midgap states derived from the intercalating Pb 2+ ions. Unlike midgap states derived from defects or dopants, the states utilized here are derived from the intrinsic crystal structure and are thus homogeneously distributed across the material. CdSe/β-Pb 0.33 V 2 O 5 heterostructures were assembled using two distinct methods: successive ionic layer adsorption and reaction (SILAR) and linker-assisted assembly (LAA). Transient absorption spectroscopy measurements indicate that, for both types of heterostructures, photoexcitation of CdSe QDs was followed by the transfer of electrons to the conduction band of β-Pb 0.33 V 2 O 5 nanowires and holes to the midgap states of β-Pb 0.33 V 2 O 5 nanowires. Holes were transferred on time scales less than 1 ps, whereas electrons were transferred more slowly on time scales of ~2 ps. In contrast, for analogous heterostructures consisting of CdSe QDs interfaced with V 2 O 5 nanowires (wherein midgap states are absent), only electron transfer was observed. Interestingly, electron transfer was readily achieved for CdSe QDs interfaced with V 2 O 5 nanowires by the SILAR method; however, for interfaces incorporating molecular linkers, electron transfer was observed only upon excitation at energies substantially greater than the bandgap absorption threshold of CdSe. Furthermore, transient absorbance decay traces reveal longer excited-state lifetimes (1–3 μs) for CdSe/β-Pb 0.33 V 2 O 5 heterostructures relative to bare β-Pb 0.33 V 2 O 5 nanowires (0.2 to 0.6 μs); the difference is attributed to surface passivation of intrinsic surface defects in β-Pb 0.33 V 2 O 5 upon interfacing with CdSe.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

A Mixed PC 61 BM‐CO i 8DFIC Based Electron Transport Material for Inverted High‐performance Perovskite Solar Cells

Abstract This study reports a blend of [6, 6]‐phenyl‐C61‐butyric acid methyl ester (PC 61 BM) and CO i 8DFIC non‐fullerene acceptor (NFA) as an electron transport layer (ETL) in perovskite solar cells (PSCs). This mixed small‐molecule ETL showed good inter‐molecule mixing, reduced intermolecular distances and decent morphology, resulting in excellent charge carrier transport properties. Morever, charge carrier extraction and transport at the perovskite/ETL interface was optimized by reducing surface traps and defects due to the passivation ability of various terminal groups from the CO i 8DFIC molecule. A high power conversion efficiency (PCE) of 19.12 % was achieved by taking advantage of benefits from both molecules, showing much better performance than the invidual PC 61 BM or CO i 8DFIC (7.13% for using the NFA only). Moreover, the storage and ambient stabilities of the mixed ETL‐based PSCs increased dramatically compared to control devices.

Chemistry↗