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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Critical Issues for Cu(InGa)Se2 Solar Cells on Flexible Polymer Web

Elemental in-line evaporation on glass substrates has been a viable process for the large-area manufacture of CuInSe2-based photovoltaics, with module efficiencies as high as 12.7% [1]. However, lightweight, flexible CuInSe2-based modules are attractive in a number of applications, such as space power sources. In addition, flexible substrates have an inherent advantage in manufacturability in that they can be deposited in a roll-to-roll configuration allowing continuous, high yield, and ultimately lower cost production. As a result, high-temperature polymers have been used as substrates in depositing CuInSe2 films [2]. Recently, efficiency of 14.1% has been reported for a Cu(InGa)Se2-based solar cell on a polyimide substrate [3]. Both metal foil and polymer webs have been used as substrates for Cu(InGa)Se2-based photovoltaics in a roll-to-roll configuration with reasonable success [4,5]. Both of these substrates do not allow, readily, the incorporation of Na into the Cu(InGa)Se2 film which is necessary for high efficiency devices [3]. In addition, polymer substrates, can not be used at temperatures that are optimum for Cu(InGa)Se2 deposition. However, unlike metal foils, they are electrically insulating, simplifying monolithically-integrated module fabrication and are not a source of impurities diffusing into the growing film. The Institute of Energy Conversion (IEC) has modified its in-line evaporation system [6] from deposition onto glass substrates to roll-to-roll deposition onto polyimide (PI) film in order to investigate key issues in the deposition of large-area Cu(InGa)Se2 films on flexible polymer substrates. This transition presented unexpected challenges that had to be resolved. In this paper, two major problems, spitting from the Cu source and the cracking of Mo back contact film, will be discussed and the solution to each will be presented.

Eser, Erten↗
NASA NTRS2006

NASA Tech Briefs, May 2006

T-Shaped Emitter Metal Structures for HBTs Rigorous Estimation of SNR of a PSK Communication Link Advanced Ka-Band Transceiver With Monopulse Tracking EMI Filters for Low-Temperature Applications Lightweight Electronic Camera for Research on Clouds Pilot Weather Advisor System Waveguide Power-Amplifier Module for 80 to 150 GHz Better Back Contacts for Solar Cells on Flexible Substrates Topics covered include:Tunable, Highly Stable Lasers for Coherent Lidar; Improved Photon-Emission-Microscope System; Program Synthesizes UML Sequence Diagrams; Aspect-Oriented Subprogram Synthesizes UML Sequence Diagrams; Updated Computational Model of Cosmic Rays Near Earth; Software for Alignment of Segments of a Telescope Mirror; Simulation of Dropping of Cargo With Parachutes; DAVE-ML Utility Program; Robust Control for the Mercury Laser Altimeter; Thermally Stable Piezoelectric and Pyroelectric Polymers; Combustion Synthesis of Ca3(PO4)2 Net-Shape Surgical Implants; Stochastic Representation of Chaos Using Terminal Attractors; Two High-Temperature Foil Journal Bearings; Using Plates To Represent Fillets in Finite-Element Modeling; Repairing Chipped Silicide Coatings on Refractory Metal Substrates; Simplified Fabrication of Helical Copper Antennas; Graded-Index "Whispering-Gallery" Optical Microresonators; Optical Profilometers Using Adaptive Signal Processing; Manufacture of Sparse-Spectrum Optical Microresonators; Exact Tuning of High-Q Optical Microresonators by Use of UV; Automation for "Direct-to" Clearances in Air-Traffic Control; Improved Traps for Removing Gases From Coolant Liquids; and Lunar Constellation of Frozen Elliptical Inclined Orbits.

Source record↗
NASA NTRS2006

Coating MCPs with AlN and GaN

A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0<x<1). These materials exhibit attractively high degrees of chemical, mechanical, and thermal stability plus acceptably high resistance to sputtering. The electron-excitation cross sections of these materials are expected to exceed those of several other materials (including diamond) that are, variously, in use or under development for the same purpose. Moreover, by doping these materials with silicon, one can render them partly electrically conductive, thereby suppressing the undesired accumulation of electric charge that could otherwise occur during bombardment by ions. For experiments, thin films of AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N are supplied in elemental form, so that there is no need for thermal decomposition at the substrate surface. The nitride films thus formed were, variously, amorphous or polycrystalline. The nitride films were coated with surface layers of gold <100 thick. The MCPs were tested in a standard configuration in which the output stage of a first MCP was coupled to the input stage of a second MCP. Each pair of MCPs was mounted in a standard holder that included front and back contact rings and an anode for collecting the output electrons of the second MCP. The MCP pairs were biased at potentials between 1.7 and 1.9 kV, and count rates measured after preamplification and discrimination. To enable a direct comparison, in one pair, the second MCP was uncoated while the first MCP was coated over half its surface. The coated and uncoated sides of the half-coated MCP were exposed to fluxes of argon ions at kinetic energies of 1.0 and 0.5 keV. At 1.0 keV, the count rate for the coated side was about 2.3 times greater than that for the uncoated side; at 0.5 keV, the count rate for the coated side was about 1.8 times greater than that for the uncoated side.

Bensaoula, Abdelhakim↗
DOE OSTI2022

Metastability and Degradation of CdTe Solar Cells Investigated by nm-Scale Electrical Potential Imaging

We report on investigations of reversible metastability and irreversible degradation of MZO/CdSeTe/CdTe devices from the perspective of electric field across the device using Kelvin probe force microscopy (KPFM). The device showed reversible transitions between the light-soak state (LSS) with the best device efficiency and the dark-soak state (DSS) with an inferior efficiency. However, it showed an irreversible degradation state (DgS) driven by long-hour light soaking at an elevated temperature. The nm-scale KPFM electric field imaging on cross-sections of the devices revealed different anomalous electric field profiles. The electric field at the LSS exhibits a main peak inside the CdSeTe layer but not at the MZO/CdSeTe heterointerface, demonstrating that working junction of the device is a buried homojunction (BHJ). At the DSS, a second electric field peak was observed at the MZO/CdSeTe interface with a similar strength to the main BHJ, which probably caused the decrease in fill factor at the DSS. At the DgS, the electric field peak at the MZO/CdSeTe interface increased significantly and a third electric field was measured at the back contact of the device. Device modeling using COMSOL and in alignment with both the electric field and device current-voltage curves suggest that a slightly low n-doped CdSeTe in the region near the MZO/CdSeTe interface caused the BHJ, and that either a loss of MZO doping or increase of the conduction band offset spike due to long-term stress caused the fill factor-dominated degradation and the increased electric field near the MZO/CdSeTe interface at the DgS. The former, MZO doping decrease, is more plausible by referring the related literature.

BHJ↗
DOE OSTI2024

Diagnosing and overcoming recombination and resistive losses in non-silicon solar cells using a silicon-inspired characterization platform

This project aimed to generate the characterization tools needed for accurate and systematic loss analysis in non-silicon photovoltaic solar cell technologies and, through the use of these tools and analysis techniques, contribute to the development of a novel class of hetero-contacts to II-VI absorbers, with the final goal of demonstrating record-breaking CdSeTe devices. CdSeTe solar cells provide a prime example of the potential impact of the techniques we proposed to develop and implement: record poly-CdSeTe cells have bandgap-voltage deficits (W oc ) of approximately 550 mV, as compared with below 400 mV for all other mature PV technologies. Similarly, these record CdSeTe devices have FFs below 80%, when other mature cells are near or above 85%. Frustratingly, a systematic identification of the origin of these sub-par performances—for example recombination or resistive losses—has been lacking, thus slowing down the development of these technologies. Similarly, it is often asserted that CdSeTe cells need a better back (hole) contact. Although most believe this is true, no one knew—at the start of this project—how high the V oc and FF could be for a given cell if it had a perfect back contact. Such characterization techniques and loss analysis methods exist and are routinely performed on c-Si solar cells (e.g. injection-dependent lifetime, Suns-V oc , transfer length method, etc). Over the years, they have been instrumental in the development of silicon devices that operate at 91% of their theoretical (Auger) limit. Lifetime testing, and the associated reconstruction of the implied-J-V curve, can moreover be performed at every cell-processing step, thus allowing a direct peek into the impact of that step on cell performance. Therefore, adapting these techniques and tools to non-Si devices would greatly improve their learning rate. In this project, we developed a Suns-ERE technique—the equipment, methodology, and know-how—to measure the implied-J-V curve, the pseudo-J-V curve, and the actual J-V curve of a thin-film solar cell, allowing an accurate assessment of the quality of the bulk material and its surface passivation, the selectivity of the contact, and its resistivity. We used this technique to show that the absorber of present CdSeTe solar cells is capable of achieving 1 V Voc,, that passivation layers exist (e.g., Al2O3) that can support such high voltages, and that the barrier is identifying contact layers that are both passivating and carrier-selective. The characterization platform created in this project and the understanding generated using it will accelerate the progress of non-silicon PV technologies. In particular, the project will contribute to CdSeTe solar cells with Voc > 1 V and cell efficiency > 24%. Such cells provide a pathway to module-level efficiencies >23%. As CdSeTe presently competes with silicon on module cost (in $\$ $/W) and yet has significantly more room for efficiency gains, the potential for LCOE reduction is particularly large. For example, CdTe modules with an efficiency of 21% would allow an LCOE below $\$ $0.04kWh -1 in average US climates.

14 SOLAR ENERGY↗
DOE OSTI2020

Back-Surface Passivation of CdTe Solar Cells Using Solution-Processed Oxidized Aluminum

Although back-surface passivation plays an important role in high-efficiency photovoltaics, it has not yet been definitively demonstrated for CdTe. Here, we present a solution-based process, which achieves passivation and improved electrical performance when very small amounts of oxidized Al 3+ species are deposited at the back surface of CdTe devices. The open circuit voltage (V oc ) is increased and the fill factor (FF) and photoconversion efficiency (PCE) are optimized when the total amount added corresponds to ~1 monolayer, suggesting that the passivation is surface specific. Addition of further Al 3+ species, present in a sparse alumina-like layer, causes the FF and PCE to drop as the interface layer becomes blocking to current flow. The optimized deposit increases the average baseline PCE for both Cu-free devices and devices where Cu is present as a dopant. The greatest improvement is found when the Al 3+ species are deposited prior to the CdCl 2 activation step and Cu is employed. In this case, the best-cell efficiency was improved from 12.6 to 14.4%. Furthermore, time-resolved photoluminescence measurements at the back surface and quantum efficiency measurements performed at the maximum power point indicate that the performance enhancement is due to a reduction in the interface recombination current at the back surface.

14 SOLAR ENERGY↗
NASA NTRS1989

Concepts for thin-film GaAs concentrator cells

The development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns.

Spitzer, M. B.↗
NASA NTRS1982

Solar cell having improved back surface reflector

The operating temperature is reduced and the output of a solar cell is increased by using a solar cell which carries electrodes in a grid finger pattern on its back surface. These electrodes are sintered at the proper temperature to provide good ohmic contact. After sintering, a reflective material is deposited on the back surface by vacuum evaporation. Thus, the application of the back surface reflector is separate from the back contact formation. Back surface reflectors formed in conjunction with separate grid finger configuration back contacts are more effective than those formed by full back metallization of the reflector material.

Chai, A. T.↗
NASA NTRS1985

NASA welding assessment program

A program was conducted to demonstrate the cycle life capability of welded solar cell modules relative to a soldered solar cell module in a simulated low earth orbit thermal environment. A total of five 18-cell welded (parallel gap resistance welding) modules, three 18-cell soldered modules, and eighteen single cell samples were fabricated using 2 x 4 cm silicon solar cells from ASEC, fused silica cover glass from OCLI, silver plated Invar interconnectors, DC 93-500 adhesive, and Kapton-Kevlar-Kapton flexible substrate material. Zero degree pull strength ranged from 2.4 to 5.7 lbs for front welded contacts (40 samples), and 3.5 to 6.2 lbs for back welded contacts (40 samples). Solar cell cross sections show solid state welding on both front and rear contacts. The 18-cell welded modules have a specific power of 124 W/kg and an area power density of 142 W/sq m (both at 28 C). Three welded and one soldered module were thermal cycle tested in a thermal vacuum chamber simulating a low earth orbit thermal environment.

Patterson, R. E.↗
NASA NTRS1985

Heavily doped polysilicon-contact solar cells

The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

Lindholm, F. A.↗
NASA NTRS1979

Wraparound-contact solar cells

Positive and negative electrical contacts are on back surface of wraparound-contact solar cell. With both terminals on nonilluminated side, cells can be connected back-to-back, and interconnection of many cells can be automated by using printed-circuit techniques. Cells are made by screen-printing layer of dielectric around edge of cell and extending top contact over dielectric to back surface. Wraparound also facilitates application of transparent covers and encapsulants. Efficiencies of cells are in excess of seventeen percent.

Baraona, C. R.↗
NASA NTRS1984

Sensitivity analysis of high-efficiency silicon solar-cell design parameters

Silicon solar cell design parameters were investigated to determine their bearing on cell efficiency. Among the parameters reviewed were: (1) bulk resistivity, (2) minority carrier lifetime cell thickness, (3) front junction depth, (4) front surface doping concentration, (5) front surface recombination velocity, and (6) back surface contact. The following were concluded: (1) there is good agreement between experimental and simulation results; (2) sheet material quality improvement is needed for high efficiency cells; (3) 20% cell of this design is feasible with 10 ms bulk lifetime material; and (4) for achieving efficiencies higher than 20% new cell designs including thin cells with light trapping and back surface field should be considered.

Mokashi, A. R.↗
DOE OSTI2023

Beneficial Effects of La 0.5 Sr 0.5 CoO 3 Coatings on Thin‐Film LiMn 2 O 4 Cathodes for Lithium Ion Batteries

Abstract The severe capacity loss of spinel LiMn 2 O 4 (LMO) limits the utility of this otherwise promising lithium ion battery cathode material. One of the strategies to mitigate capacity fade is applying a coating on LMO particle surfaces. While this approach yields promising results, there is limited understanding of mechanisms whereby coatings improve LMO capacity retention. Herein, the effects of a new protective coating material, La 0.5 Sr 0.5 CoO 3 (LSCO), in a thin‐film battery geometry that is amenable to fundamental studies of electrode processes, are reported. RF sputtering deposition is used to produce high quality 25–100 nm LMO cathodes on Al 2 O 3 substrates with an intervening Pt/Ti back‐side contact layer. Cycling of the un‐coated cathodes results in capacity loss of 18% over 300 cycles. Adding a 2 nm LSCO layer reduces the capacity loss to 3%. While this may be due in part to reduced Mn dissolution, scanning transmission electron microscopy results indicate that the coating helps to preserve crystallinity and reduce lattice structure distortion due to inhibited formation of defect tetragonal spinel. Three‐electrode electrochemical impedance spectroscopy results reveal that the LSCO coating increases charge transfer and ohmic resistances, but the increases are generally too small to significantly impact cell performance even at high C‐rates.

25 ENERGY STORAGE↗
DOE OSTI2022

Bifacial CdTe Solar Cells with Copper Chromium Oxide Back-Buffer Layer

Bifacial solar cells have the potential to maintain energy output higher than monofacial devices under unfavorable weather conditions. A transparent back-buffer layer which can passivate the interface and improve the minority carrier lifetime is critical in CdTe-based bifacial devices. Herein, solution-processed Cu x Cr y O z as a promising back-buffer for CdTe/CdS solar cells is demonstrated. The carrier lifetimes measured at the front and back of the device are 31.2 and 3.1 ns, respectively, which correspond to an increase of ≈38% and 138%, respectively, compared to the reference device. This dramatic improvement in lifetime results in a 100% increase in short-circuit current measured with backside illumination. The best bifacial device has efficiencies 7.6% and 12.5%, respectively, from back and front illumination, yielding a bifaciality factor of 0.60.

14 SOLAR ENERGY↗
DOE OSTI2021

Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE

GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm 2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.

42 ENGINEERING↗
NASA NTRS1972

Lubrication with solids.

Brief discussion of the historical background, variety range, chemistry, physics, and other properties of solid lubricants, and review of their current uses. The widespread use of solid lubricants did not occur until about 1947. At present, they are the object of such interest that a special international conference on their subject was held in 1971. They are used at temperatures beyond the useful range of conventional lubricating oils and greases. Their low volatility provides them with the capability of functioning effectively in vacuum and invites their use in space applications. Their high load carrying ability makes them useful with heavily loaded components. Solid lubricants, however, do lack some of the desirable properties of conventional lubricants. Unlike oils and greases, which have fluidity and can continuously be carried back into contact with lubricated surfaces, solid lubricants, because of their immobility, have finite lives. Also, oils and greases can carry away frictional heat from contacting surfaces, while solid lubricants cannot.

Buckley, D. H.↗