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At least 199 records · Page 11

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DOE OSTI2024

Platinum/Tantalum Carbide Core–Shell Nanoparticles with Sub‐Monolayer Shells for Methanol and Oxygen Electrocatalysis

Abstract Core–shell architectures provide great opportunities to improve catalytic activity, but achieving nanoparticle stability under electrochemical cycling remains challenging. Herein, core–shell nanoparticles comprising atomically thin Pt shells over earth‐abundant TaC cores are synthesized and used as highly durable electrocatalysts for the methanol oxidation reaction (MOR) and the oxygen reduction reaction (ORR) needed to drive direct methanol fuel cells (DMFCs). Characterization data show that a thin oxidic passivation layer protects the TaC core from undergoing dissolution in the fuel cell‐relevant potential range, enabling the use of partially covered Pt/TaC core–shell nanoparticles for MOR and ORR with high stability and enhanced catalytic performance. Specifically, at the anode the surface‐oxidized TaC further enhances MOR activity compared to conventional Pt nanoparticles. At the cathode, the Pt/TaC catalyst feature increases tolerance to methanol crossover. These results show unique synergistic advantages of the core–shell particles and open opportunities to tailor catalytic properties for electrocatalytic reactions.

Chemistry↗

DOE OSTI2023

Designing Magnetic Properties in CrSBr through Hydrostatic Pressure and Ligand Substitution

Abstract Magnetic van der Waals (vdW) materials are a promising platform for producing atomically thin spintronic and optoelectronic devices. The A‐type antiferromagnet CrSBr has emerged as a particularly exciting material due to its high magnetic ordering temperature, semiconducting electrical properties, and enhanced chemical stability compared to other vdW magnets. Exploring mechanisms to tune its magnetic properties will facilitate the development of nanoscale devices based on vdW materials with designer magnetic properties. Here it is investigated how the magnetic properties of CrSBr change under pressure and ligand substitution. Pressure compresses the unit cell, increasing the interlayer exchange energy while lowering the Néel temperature. Ligand substitution, realized synthetically through Cl alloying, anisotropically compresses the unit cell and suppresses the Cr‐halogen covalency, reducing the magnetocrystalline anisotropy energy and decreasing the Néel temperature. A detailed structural analysis combined with first‐principles calculations reveals that alterations in the magnetic properties are intricately related to changes in direct Cr–Cr exchange interactions and the Cr–anion superexchange pathways. Further, it is demonstrated that Cl alloying enables chemical tuning of the interlayer coupling from antiferromagnetic to ferromagnetic, which is unique among known two‐dimensional magnets.

Telford, Evan J.↗

DOE OSTI2021

Charge Transfer Properties of Heterostructures Formed by Bi 2 O 2 Se and Transition Metal Dichalcogenide Monolayers

Atomically thin bismuth oxyselenide (Bi 2 O 2 Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi 2 O 2 Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi 2 O 2 Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi 2 O 2 Se and representative transition metal dichalcogenides (namely, WS 2 /Bi 2 O 2 Se and MoS 2 /Bi 2 O 2 Se) is reported. In this work, Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump–probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi 2 O 2 Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Direct Exfoliation of Nanoribbons from Bulk van der Waals Crystals

Confinement of monolayers into quasi-1D atomically thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene is limited to bottom-up synthesis or lithographic patterning. Here, in this study, a versatile and direct approach is introduced to exfoliate bulk van der Waals crystals as nanoribbons. Akin to the Scotch tape exfoliation method for producing monolayers, this technique provides convenient access to a wide range of nanoribbons derived from their corresponding bulk crystals, including MoS 2 , WS 2 , MoSe 2 , WSe 2 , MoTe 2 , WTe 2 , ReS 2 , and hBN. The nanoribbons are predominantly monolayer, single-crystalline, parallel-aligned, flat, and exhibit high aspect ratios. The role of confinement, strain, and edge configuration of these nanoribbons is observed in their electrical, magnetic, and optical properties. This versatile exfoliation technique provides a universal route for producing a variety of nanoribbon materials and supports the study of their fundamental properties and potential applications.

2D materials↗

DOE OSTI2025

Unusual Ferromagnetic Band Evolution and High Curie Temperature in Monolayer 1T‐CrTe2 on Bilayer Graphene

2D van der Waals ferromagnets hold immense promise for spintronic applications due to their controllability and versatility. Despite their significance, the realization and in-depth characterization of ferromagnetic materials in atomically thin single layers, close to the true 2D limit, has been scarce. Here, a successful synthesis of monolayer (ML) 1T-CrTe2 is reported on a bilayer graphene (BLG) substrate via molecular beam epitaxy. Using angle-resolved photoemission spectroscopy and magneto-optical Kerr effect measurements, that the ferromagnetic transition is observed at the Curie temperature (TC) of 150 K in ML 1T-CrTe2 on BLG, accompanied by unconventional temperature-dependent band evolutions. The spectroscopic analysis and first-principle calculations reveal that the ferromagnetism may arise from Goodenough-Kanamori super-exchange and double-exchange interactions, enhanced by the lattice distortion and the electron doping from the BLG substrate. These findings provide pivotal insight into the fundamental understanding of mechanisms governing 2D ferromagnetism and offer a pathway for engineering higher TC in 2D materials for future spintronic devices.

Park, Kyoungree↗

DOE OSTI2020

A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping

Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the possible formation of such an interface. Furthermore, Ta adsorption on the surface of a p-doped SnSe shifts the valence band maximum towards the higher binding energy due to the charge transfer from Ta to SnSe that is highly localized at the surface due to the layered structure of SnSe. As a result, the charge carriers of the surface are changed from holes of its bulk characteristics to electrons, while the bulk remains as a p-type semiconductor. This observation suggests that the well-defined interface of a p-n junction with an atomically thin n-region is formed between Ta-adsorbed surface and bulk.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Measuring the flatband potential in 2D semiconductors: Pitfalls and a possible SECCM solution

The flatband potential (V fb ) is a critical parameter in semiconductor electrochemistry, defining the potential at which no excess charge exists at the semiconductor/electrolyte interface. It serves as a key reference for interpreting charge transfer kinetics and current–voltage behavior. However, conventional methods like Mott–Schottky analysis fail for atomically thin 2D materials due to the breakdown of the depletion approximation. This perspective examines the limitations of traditional V fb measurements for 2D semiconductors and the experimental challenges that arise. To address these issues, we propose using scanning electrochemical cell microscopy (SECCM) to spatially resolve the potential of zero charge (V pzc ), equivalent to V fb . This approach mitigates sample heterogeneity issues, such as pinholes or multilayer defects, and offers a pathway to more accurate electrochemical characterization. Ultimately, this method will enhance understanding of current–potential behavior in 2D materials, supporting the design of advanced systems for photoelectrocatalysis, energy conversion, and sensing.

2D semiconductors↗

DOE OSTI2025

Nanoscale Structure and Interfacial Electrochemical Reactivity of Moiré-Engineered Atomic Layers

Here, the electronic properties of atomically thin van der Waals (vdW) materials can be precisely manipulated by vertically stacking them with a controlled offset (for example, a rotational offset─i.e., twist─between the layers, or a small difference in lattice constant) to generate moiré superlattices. In recent years, the application of this “twistronics” concept to interfacial electrochemistry has unveiled unique pathways for tailoring the electrochemical reactivity. Furthermore, this Account provides an overview of our work that leveraged a suite of structural characterization methods, such as interferometric four-dimensional scanning transmission electron microscopy, dark-field transmission electron microscopy, and scanning tunneling microscopy, along with nanoscale electrochemical measurement techniques, namely, scanning electrochemical cell microscopy (SECCM), to uncover and dissect the profound impact of electrode electronic structure, controlled by interlayer twist, on interfacial electron transfer kinetics.

Charge transfer↗

DOE OSTI2023

Nonclassical Strong Metal–Support Interactions for Enhanced Catalysis

Strong metal–support interaction (SMSI), which encompasses reversible encapsulation and de-encapsulation and modulation of surface adsorption properties, imposes great impacts on the performance of heterogeneous catalysts. Recent development of SMSI has surpassed the prototypical encapsulated Pt-TiO 2 catalyst, affording a series of conceptually novel and practically advantageous catalytic systems. Here, in this work, we provide our perspective on recent progress in nonclassical SMSIs for enhanced catalysis. Unravelling the structural complexity of SMSI necessitates the combination of multiple characterization techniques at different scales. Synthesis strategies leveraging chemical, photonic, and mechanochemical driving forces further expand the definition and application scope of SMSI. Exquisite structure engineering permits elucidation of the interface, entropy, and size effect on the geometric and electronic characteristics. Materials innovation places the atomically thin two-dimensional materials at the forefront of interfacial active site control. A broader space is awaiting exploration, where exploitation of metal–support interactions brings compelling catalytic activity, selectivity, and stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Strong Surface-Enhanced Coherent Phonon Generation in van der Waals Materials

Terahertz (THz) coherent phonons have emerged as promising candidates for the next generation of high-speed, low-energy information carriers in atomically thin phononic or phonon-integrated on-chip devices. However, effectively manipulating THz coherent phonons remains a significant challenge. Here, in this study, we investigated THz coherent phonon generation in exfoliated van der Waals (vdW) flakes of Fe 3 GeTe 2 , Fe 5 GeTe 2 , and FePS 3 . We successfully generated the THz A 1g coherent phonon mode in these vdW flakes. An innovative approach involved partially exfoliating vdW flakes on a gold substrate and partially on a silicon (Si) substrate to compare the THz coherent phonon generation between both sides. Interestingly, we observed a significantly enhanced THz coherent phonon in the vdW/gold area compared with that in the vdW/Si area. Frequency-domain Raman mapping across the vdW flakes corroborated these findings. Numerical simulations further indicated a stronger enhanced surface field in vdW/gold structures than in vdW/Si structures. Consequently, we attribute the observed enhancement in THz coherent phonon generation to the increased surface field on the gold substrate. This enhancement was consistent across the three different vdW materials studied, suggesting the universality of this strategy. Our results hold promise for advancing the design of THz phononic and phonon-integrated devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Cavity-Assisted Coherent Phonon Generation and Control in a WSe 2 /Au Structure

Coherent phonons in the Terahertz (THz) regime have gained attention as potential candidates for next-generation high-speed, low-energy information carriers in atomically thin phononic or phonon-integrated on-chip devices. Nevertheless, achieving efficient control over THz coherent phonons continues to pose a considerable challenge. In this work, we explore THz coherent phonon generation in exfoliated van der Waals (vdW) flakes of WSe 2 on Au (WSe 2 /Au) and Si (WSe 2 /Si) using time-resolved pump-probe spectroscopy. The generation of THz coherent phonons was studied as a function of WSe 2 layer thickness and laser wavelength. Notably, a significant enhancement in THz coherent phonon generation was observed in the WSe 2 /Au structure, but only within specific ranges of WSe 2 thickness and laser wavelength. Further, the results from numerical simulations, which consider a self-hybridized optical cavity depending on WSe 2 thickness, along with optical reflectance and Raman spectroscopy measurements, aligned well with the time-domain observations of THz coherent phonon generation. We propose that the observed enhancement in THz coherent phonon generation is strongly influenced by light-matter interaction in the WSe 2 cavity, a mechanism that may be applicable to a broader range of vdW materials. These findings offer promising insights for the development of THz phononic or phonon-integrated devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Broadening the Gas Separation Utility of Monolayer Nanoporous Graphene Membranes by an Ionic Liquid Gating

Ultrathin two-dimensional (2D) monolayer atomic crystal materials offer great potential for extending the field of novel separation technology due to their infinitesimal thickness and mechanical strength. One difficult and ongoing challenge is to perforate the 2D monolayer material with subnanometer pores with atomic precision for sieving similarly sized molecules. Here, we demonstrate the exceptional separation performance of ionic liquid (IL)/graphene hybrid membranes for challenging separation of CO 2 and N 2 . Notably, the ultrathin ILs afford dynamic tuning of the size and chemical affinity of nanopores while preserving the high permeance of the monolayer nanoporous graphene membranes. The hybrid membrane yields a high CO 2 permeance of 4000 GPU and an outstanding CO 2 /N 2 selectivity up to 32. Finally, this rational hybrid design provides a universal direction for broadening gas separation capability of atomically thin nanoporous membranes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2021

Site-Controlled Quantum Emitters in Monolayer MoSe 2

Atomically thin semiconductors provide a highly attractive platform for quantum emitters (QEs): They can be combined with arbitrary substrates, can be spatially aligned with photonic structures, and can be electrically driven. All QEs reported to date in these materials have, however, relied on nominally spin-forbidden transitions, with radiative rates falling substantially below those of other solid-state QE systems. In this work, we employ strain confinement in monolayer MoSe 2 to produce engineered QEs, as confirmed in photon antibunching measurements. We discuss spin-allowed versus spin-forbidden transitions based on magneto- and time-resolved photoluminescence measurements. We calculate a radiative rate for spin-allowed quantum emission greater than 1 ns –1 , which exceeds reported radiative rates of WSe 2 QEs by 2 orders of magnitude.

2D materials↗

DOE OSTI2021

Observation of Giant Optical Linear Dichroism in a Zigzag Antiferromagnet FePS 3

Direct optical probing of the antiferromagnetic order parameter in atomically thin samples is challenging, for example, via magneto-optical spectroscopy, due to the lack of net magnetization. Here, we report zigzag-antiferromagnetism (AFM) induced optical linear dichroism (LD) in layered transition-metal thiophosphate FePS3 down to the monolayer limit. The observed LD is giant despite having the optical wave vector parallel to the Neel vector. The LD is at least one order of magnitude larger than those reported in other antiferromagnetic systems, where the optical wave vector is orthogonal to the Neel vector. The large LD enables the probe of 60 degrees orientated zigzag-AFM domains. The optical anisotropy in FePS 3 originates from an electronic anisotropy associated with the zigzag direction of the AFM order and is independent of the spin-pointing direction. Furthermore, our findings point to a new optical approach for the investigation and control of zigzag or stripe magnetic order in strongly correlated systems.

2D magnet↗

DOE OSTI2021

Manipulation of Exciton Dynamics in Single-Layer WSe 2 Using a Toroidal Dielectric Metasurface

Recent advances in emerging atomically thin transition metal dichalcogenide semiconductors with strong light–matter interactions and tunable optical properties provide novel approaches for realizing new material functionalities. Coupling two-dimensional semiconductors with all-dielectric resonant nanostructures represents an especially attractive opportunity for manipulating optical properties in both the near-field and far-field regimes. In this work, by integrating single-layer WSe 2 and titanium oxide (TiO 2 ) dielectric metasurfaces with toroidal resonances, we realized robust exciton emission enhancement over 1 order of magnitude at both room and low temperatures. Furthermore, we could control exciton dynamics and annihilation by using temperature to tailor the spectral overlap of excitonic and toroidal resonances, allowing us to selectively enhance the Purcell effect. Our results provide rich physical insight into the strong light–matter interactions in single-layer TMDs coupled with toroidal dielectric metasurfaces, with important implications for optoelectronics and photonics applications.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Dynamic Tuning of Moiré Excitons in a WSe 2 /WS 2 Heterostructure via Mechanical Deformation

Moiré superlattices in van der Waals (vdW) heterostructures form by stacking atomically thin layers on top of one another with a twist angle or lattice mismatch. The resulting moiré potential leads to a strong modification of the band structure, which can give rise to exotic quantum phenomena ranging from correlated insulators and superconductors to moiré excitons and Wigner crystals. Here, in this study, we demonstrate the dynamic tuning of moiré potential in a WSe 2 /WS 2 heterostructure at cryogenic temperature. We utilize the optical fiber tip of a cryogenic scanning near-field optical microscope (SNOM) to locally deform the heterostructure and measure its near-field optical response simultaneously. The deformation of the heterostructure increases the moiré potential, which leads to a red shift of the moiré exciton resonances. We observe the interlayer exciton resonance shifts up to 20 meV, while the intralayer exciton resonances shift up to 17 meV.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2024

Low Resistance Contact to P-Type Monolayer WSe 2

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. Here, in this study, we develop a charge-transfer doping strategy with WSe 2 /α-RuCl 3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 10 13 cm -2 can be achieved in the WSe 2 /α-RuCl 3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe 2 transistors with an on-current of 35 μA·μm -1 and an I ON /I OFF ratio exceeding 10 9 at room temperature.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Exciton–Phonon Coupling Induces a New Pathway for Ultrafast Intralayer-to-Interlayer Exciton Transition and Interlayer Charge Transfer in WS 2 –MoS 2 Heterostructure: A First-Principles Study

Despite the weak, van der Waals interlayer coupling, photoinduced charge transfer vertically across atomically thin interfaces can occur within surprisingly fast, sub-50 fs time scales. An early theoretical understanding of charge transfer is based on a noninteracting picture, neglecting excitonic effects that dominate optical properties of such materials. We employ an ab initio many-body perturbation theory approach, which explicitly accounts for the excitons and phonons in the heterostructure. Our large-scale first-principles calculations directly probe the role of exciton-phonon coupling in the charge dynamics of the WS 2 /MoS 2 heterobilayer. We find that the exciton-phonon interaction induced relaxation time of photoexcited excitons at the K valley of MoS 2 and WS 2 is 67 and 15 fs at 300 K, respectively, which sets a lower bound to the intralayer-to-interlayer exciton transfer time and is consistent with experiment reports. We further show that electron-hole correlations facilitate novel transfer pathways that are otherwise inaccessible to noninteracting electrons and holes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗