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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

electronic packaging↗
NASA NTRS1994

Power Electronics Development for the SPT-100 Thruster

Russian electric propulsion technologies have recently become available on the world market. Of significant interest is the Stationary Plasma Thruster (SPT) which has a significant flight heritage in the former Soviet space program. The SPT has performance levels of up to 1600 seconds of specific impulse at a thrust efficiency of 0.50. Studies have shown that this level of performance is well suited for stationkeeping applications, and the SPT-100, with a 1.35 kW input power level, is presently being evaluated for use on Western commercial satellites. Under a program sponsored by the Innovative Science and Technology Division of the Ballistic Missile Defense Organization, a team of U.S. electric propulsion specialists observed the operation of the SPT-100 in Russia. Under this same program, power electronics were developed to operate the SPT-100 to characterize thruster performance and operation in the U.S. The power electronics consisted of a discharge, cathode heater, and pulse igniter power supplies to operate the thruster with manual flow control. A Russian designed matching network was incorporated in the discharge supply to ensure proper operation with the thruster. The cathode heater power supply and igniter were derived from ongoing development projects. No attempts were made to augment thruster electromagnet current in this effort. The power electronics successfully started and operated the SPT-100 thruster in performance tests at NASA Lewis, with minimal oscillations in the discharge current. The efficiency of the main discharge supply was measured at 0.92, and straightforward modifications were identified which could increase the efficiency to 0.94.

Hamley, John A.↗
NASA NTRS2013

Radial Profiles of Plasma Electron Characteristics in a Low-Power Arcjet

Since 1960, the Arc Jet Complex at NASA Ames Research Center has been a source of long-duration, high-enthalpy flow for materials testing with application to the thermal protection of aerospace vehicle components. From their inception the facilities have played an integral role supporting many of NASA's space flight programs and numerous DoD projects. In recent years advancements in computational fluid dynamics (CFO) have made the resultant models a valuable tool for assessing and predicting performance, however, the inherent limitation of models to compensate for a dissociated, transitionally high temperature nonequilibrated flowfield have made further measurements necessary. The use of electrostatic probe diagnostics within similarly harsh plasma environments in previous studies have been met with much success. In this study, the use of a single Langmuir probe was implemented to characterize the plasma parameters of interest as they vary radially within a large volume of the plume. Classical Langmuir probe theory was applied to achieve first order estimates of the heavy particle temperature, the ratio T(sub i)/T(sub e), and the ionization fraction. As expected, both the electron temperature and electron density measurements show a dependence on radial distance from the plume centerline, with electron density profiles showing the largest dependence. This paper aims to validate and strengthen modeling work conducted at the NASA Ames Research Center by measuring the critical plasma parameters (electron temperature, electron density, and plasma potential) within the arc plume of a subscale arc jet. These parameters are intended to give physical insight into the flow characteristics while providing the necessary boundary conditions to validate full scale simulations.

Codron, Douglas↗
NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

High temperature↗
NASA NTRS1972

Optical computing.

Applications of the optical computer include an approach for increasing the sharpness of images obtained from the most powerful electron microscopes and fingerprint/credit card identification. The information-handling capability of the various optical computing processes is very great. Modern synthetic-aperture radars scan upward of 100,000 resolvable elements per second. Fields which have assumed major importance on the basis of optical computing principles are optical image deblurring, coherent side-looking synthetic-aperture radar, and correlative pattern recognition. Some examples of the most dramatic image deblurring results are shown.

Stroke, G. W.↗
NASA NTRS1975

Switching regulator emission control circuit for ion sources

An electron emission control circuit of the switching regulator type operating at 100 kHz has been developed which maintains a constant emission current within 0.1% for a cathode power demand variation of approximately 100%. The power output stage has an efficiency of 67%, and the overall efficiency is 45% when driving a thoria-coated iridium cathode having a nominal resistance at operating temperature of 2.5 ohms. Under optimum conditions, the bus power demand is 1.75 W. The circuit is useful in controlling the electron emission current of ion sources in applications which involve a substantial variation of the cathode work function, such as oxygen partial pressure measurements over a large dynamic range.

Clay, F. P., Jr.↗
NASA NTRS1978

Annealing of GaAs solar cells damaged by electron irradiation

Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.

Walker, G. H.↗
NASA NTRS1984

Surface and allied studies in silicon solar cells

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

Lindholm, F. A.↗
NASA NTRS1984

Ferm cathode operation in the test bed ion engine

A rapid start hollow cathode has been developed for high power ion thruster application. Using no low work function insert or heater, the Field Enhanced Refractory Metal (FERM) cathode electron emission occurs from a refractory metal tube concentric with the cathode barrel. Results are presented for FERM cathode operation in the high field strength Test Bed Ion Engine. Using a controlled glow discharge heating technique, cathode start up times of 1-2 secs are shown. Cathode V-I curves up to 35 ampere emission are presented and life limiting component erosion mechanisms, at these high current levels, are discussed.

Aston, G.↗
NASA NTRS1990

Custom electronic subsystems for the laboratory telerobotic manipulator

The National Aeronautics and Space Administration (NASA) Space Station Program presents new opportunities for the application of telerobotic and robotic systems. The Laboratory Telerobotic Manipulator (LTM) is a highly advanced 7 degrees-of-freedom (DOF) telerobotic/robotic manipulator. It was developed and built for the Automation Technology Branch at NASA's Langley Research Center (LaRC) for work in research and to demonstrate ground-based telerobotic manipulator system hardware and software systems for future NASA applications in the hazardous environment of space. The LTM manipulator uses an embedded wiring design with all electronics, motor power, and control and communication cables passing through the pitch-yaw differential joints. This design requires the number of cables passing through the pitch/yaw joint to be kept to a minimum. To eliminate the cables needed to carry each pitch-yaw joint's sensor data to the VME control computers, a custom-embedded electronics package for each manipulator joint was developed. The electronics package collects and sends the joint's sensor data to the VME control computers over a fiber optic cable. The electronics package consist of five individual subsystems: the VME Link Processor, the Joint Processor and the Joint Processor power supply in the joint module, the fiber optics communications system, and the electronics and motor power cabling.

Glassell, R. L.↗
NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗
NASA NTRS2003

Improved Silicon Carbide Crystals Grown From Atomically Flat Surfaces

The NASA Glenn Research Center is demonstrating that atomically flat (i.e., step-free) silicon carbide (SiC) surfaces are ideal for realizing greatly improved wide bandgap semiconductor films with lower crystal defect densities. Further development of these improved films could eventually enable harsh-environment electronics beneficial to jet engine and other aerospace and automotive applications, as well as much more efficient and compact power distribution and control. The technique demonstrated could also improve blue-light lasers and light-emitting-diode displays.

Neudeck, Philip G.↗
NASA NTRS2007

Slotted antenna waveguide plasma source

A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster applications, ion implantation, and related applications. This slotted antenna plasma source invention operates on the principle of electron cyclotron resonance (ECR). It employs no window and it is completely electrodeless and therefore its operation lifetime is long, being limited only by either the microwave generator itself or charged particle extraction grids if used. The high density plasma source can also be used to extract an electron beam that can be used as a plasma cathode neutralizer for ion source beam neutralization applications.

Foster, John↗
NASA NTRS2007

Fluence Uniformity Measurements in an Electron Accelerator Used for Irradiation of Extended Area Solar Cells and Electronic Circuits for Space Applications

It is common to have liquid crystal displays and electronic circuit boards with area sizes of the order of 20x20 sq cm on board of satellites and space vehicles. Usually irradiating them at different fluence values assesses the radiation damage in these types of devices. As a result, there is a need for a radiation source with large spatial fluence uniformity for the study of the damage by radiation from space in those devices. Kent State University s Program on Electron Beam Technology has access to an electron accelerator used for both research and industrial applications. The electron accelerator produces electrons with energies in the interval from 1 to 5 MeV and a maximum beam power of 150 kW. At such high power levels, the electron beam is continuously scanned back and forth in one dimension in order to provide uniform irradiation and to prevent damage to the sample. This allows for the uniform irradiation of samples with an area of up to 1.32 sq m. This accelerator has been used in the past for the study of radiation damage in solar cells (1). However in order to irradiate extended area solar cells there was a need to measure the uniformity of the irradiation zone in terms of fluence. In this paper the methodology to measure the fluence uniformity on a sample handling system (linear motion system), used for the irradiation of research samples, along the irradiation zone of the above-mentioned facility is described and the results presented. We also illustrate the use of the electron accelerator for the irradiation of large area solar cells (of the order of 156 sq cm) and include in this paper the electrical characterization of these types of solar cells irradiated with 5 MeV electrons to a total fluence of 2.6 x 10(exp 15) e/sq cm.

Uribe, Roberto M.↗
NASA NTRS1998

Evaluation of Capacitors at Cryogenic Temperatures for Space Applications

Advanced electronic systems designed for use in planetary exploration missions must operate efficiently and reliably under the extreme cold temperatures of deep space environment. In addition, spacecraft power electronics capable of cold temperature operation will greatly simplify the thermal management system by eliminating the need for heating units and associated equipment and thereby reduce the size and weight of the overall power system. In this study, film, mica, solid tantalum and electric double layer capacitors were evaluated as a function of temperature from room to liquid nitrogen in terms of their dielectric properties. These properties included capacitance stability and dielectric loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed on the capacitors. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors investigated for low temperature applications.

Patterson, Richard L.↗
NASA NTRS2012

Cryogenic Applications of Commercial Electronic Components

We have developed a range of techniques useful for constructing analog and digital circuits for operation in a liquid Helium environment (4.2K), using commercially available low power components. The challenges encountered in designing cryogenic electronics include finding components that can function usefully in the cold and possess low enough power dissipation so as not to heat the systems they are designed to measure. From design, test, and integration perspectives it is useful for components to operate similarly at room and cryogenic temperatures; however this is not a necessity. Some of the circuits presented here have been used successfully in the MUSTANG and in the GISMO camera to build a complete digital to analog multiplexer (which will be referred to as the Cryogenic Address Driver board). Many of the circuit elements described are of a more general nature rather than specific to the Cryogenic Address Driver board, and were studied as a part of a more comprehensive approach to addressing a larger set of cryogenic electronic needs.

Buchanan, Ernest D.↗
NASA NTRS1988

An electronically tuned, stable 8415-MHz dielectric resonator FET oscillator for space applications

A voltage-controlled 8415 MHz FET oscillator stabilized by a dielectric resonator is described. The oscillator provides a linear electronic tuning range of over 3.2 MHz with a flat power output equal to +1.8 dBm (27 C nominal), a single-sideband noise to carrier ratio of -68 dBc/Hz at 1 kHz off carrier, and a frequency temperature coefficient of 0.54 part per million/C over a -24 to 75 C range. The oscillator withstood 150 krads(Si) of gamma radiation with no significant performance degradation. The overall performance of the oscillator is in many ways far superior to that of an equivalent bipolar oscillator for space applications.

Lakshminarayana, M.↗
NASA NTRS1993

Miniaturization in x ray and gamma ray spectroscopy

The paper presents advances in two new sensor technologies and a miniaturized associated electronics technology which, when combined, can allow for very significant miniaturization and for the reduction of weight and power consumption in x-ray and gamma-ray spectroscopy systems: (1) Mercuric iodide (HgI2) x-ray technology, which allows for the first time the construction of truly portable, high-energy resolution, non-cryogenic x-ray fluorescence (XRF) elemental analyzer systems, with parameters approaching those of laboratory quality cryogenic instruments; (2) the silicon avalanche photodiode (APD), which is a solid-state light sensitive device with internal amplification, capable of uniquely replacing the vacuum photomultiplier tube in scintillation gamma-ray spectrometer applications, and offering substantial improvements in size, ruggedness, low power operation and energy resolution; and (3) miniaturized (hybridized) low noise, low power amplification and processing electronics, which take full advantage of the favorable properties of these new sensors and allow for the design and fabrication of advanced, highly miniaturized x-ray and gamma-ray spectroscopy systems. The paper also presents experimental results and examples of spectrometric systems currently under construction. The directions for future developments are discussed.

Iwanczyk, Jan S.↗