SEARCH · Engineering Papers
Results for “TiN”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Formulation and testing of a high-tin borosilicate nuclear waste glass for in-can melting
Here, borosilicate waste glasses were successfully developed to immobilize two high-level waste raffinate streams via an in-can melter process with an Inconel 601 canister at 1050 °C. Measured viscosity and crystallinity thermal profiles were within the targeted processing constraints for the in-can melter process. Measured chemical durability of the glass by ASTM C1285–21 (Method A), ranged from normalized loss of boron, NL(B) = 1.44 – 2.65 g•m -2 , and NL(B) decreased with increased waste loading, accompanied by increased SnO 2 crystallinity. Measured corrosion of the in-can melter canister by a glass melt showed that Inconel 601 performed well at 1100 °C for up to 500 hr. Resistance polarization measurements versus time revealed that Inconel 601 corrosion rates in (and by) glass melts decreased from an initial rate of 63 mm•y -1 down to 10.2 mm•y -1 after 137 h with increased duration, which was attributed to formation of an oxide passivation layer (mainly Cr 2 O 3 ) at the alloy-glass interface.
Structure evolution and tin redistribution during oxidation of Zircaloy-4 at 500°C
Zirconium (Zr) alloys are widely used as fuel cladding in nuclear power reactors due to their thermal stability, mechanical durability, corrosion resistance, and low neutron absorption cross-section. However, their performance is challenged by oxidation in reactor environments, making the study of Zr alloy corrosion behavior crucial for ensuring the safety, longevity, and economic viability of nuclear power systems. While the oxidation behavior of Zr-based cladding materials has been extensively studied since the 1950s, a mechanistic understanding into the relationship between structure evolution, solute element redistribution, and properties remains elusive. Valuable insights may be obtained through advanced experimental methods, such as in-situ and high resolution microscopy techniques. Here, in this study, the oxidation behavior of Zircaloy-4 at 500 °C in O 2 is characterized using a multimodal advanced characterization approach. Using in-situ X-ray diffraction, the phase evolution from metastable to stable oxides is tracked in real time. Complementary high-resolution techniques, including electron microscopy and atom probe tomography, reveal nanoscale insights into the microstructural changes and solute redistribution across the oxide/metal interface. Nanohardness mapping across the oxide/metal interface highlights localized mechanical property variations that may be linked to changes in microstructure and crystal structure within the oxide layer. These findings offer valuable insights into the microstructure and property evolution of Zircaloy-4 during oxidation, contributing to a better understanding of microstructural changes in Zr-based alloys under oxidative environments.
Few-layer tin sulfide (SnS): Controlled synthesis, thickness dependent vibrational properties, and ferroelectricity
Group IV monochalcogenides, anisotropic van der Waals crystals (and black phosphorus analogues), are attracting increasing interest due to a number of exceptional properties including anisotropic optoelectronics and multiferroicity predicted and in part realized in the ultrathin limit. Due to their enhanced chemical reactivity, both exfoliation and synthesis of monolayer and few-layer crystals pose challenges not found in other 2D/layered materials, such as the transition metal dichalcogenides. In this work, we show that SnS synthesis on SnS 2 van der Waals substrates can address these challenges and consistently produces few-layer flakes, a capability that is explained via analysis of real-time microscopy of the growth process. Raman spectroscopy combined with efficient computations of the Raman-active modes across an extended thickness range enables a comprehensive understanding of the evolution of the vibrational properties of SnS with number of layers. Lateral piezoresponse force microscopy provides unprecedented insight into the stacking-dependent polarization and ferroelectric domain structures in large few-layer SnS flakes. The combined results establish a basis for further fundamental studies and applications of SnS and other group IV monochalcogenides in the few-layer regime.
Evolution of the dipole polarizability in the stable tin isotope chain
Not Available
Shape polarization in the tin isotopes near N = 60 from precision g-factor measurements on short-lived 11/2 - isomers
The g factors of 11/2 - isomers in semimagic 109 Sn and 111 Sn (isomeric lifetimes $\tau$ = 2.9(3) ns and $\tau$ = 14.4(7) ns, respectively) were measured by an extension of the Time Differential Perturbed Angular Distribution technique, which uses LaBr3 detectors and the hyperfine fields of a gadolinium host to achieve precise measurements in a new regime of short-lived isomers. The results, g(11/2 - ; 109 Sn) = -0.186(8) and g(11/2 - ; 111 Sn) = -0.214(4), are significantly lower in magnitude than those of the 11/2 - isomers in the heavier isotopes and depart from the value expected for a near pure neutron h 11/2 configuration. Broken-symmetry density functional theory calculations applied to the sequence of 11/2 - states reproduce the magnitude and location of this deviation. The g(11/2 - ) values are affected by shape core polarization; the odd Oh 11/2 neutron couples to J π = 2 + , 4 + , 6 + ... configurations in the weakly-deformed effective core, causing a decrease in the g-factor magnitudes.
Mechanical properties of homogeneous and nitrogen graded TiN thin films
Not Available
Enhanced understanding of recombination mechanisms in high-performance tin-lead perovskite solar cells
Not Available
Lead-Free Semiconductors: Phase-Evolution and Superior Stability of Multinary Tin Chalcohalides
Not Available
Defect-Limited Mobility and Defect Thermochemistry in Mixed A-Cation Tin Perovskites: (CH3NH3)1-xCsxSnBr3
Hybrid organic-inorganic semiconductors crystallizing in the perovskite structure present a significant opportunity for realizing defect-tolerant semiconductors. In this work, we examine the solid solution, (CH3NH3)1-xCsxSnBr3, and identify the thermochemistry dictating the intrinsic carrier concentrations and how local structural distortions influences this electronic behavior. This family of compounds exhibits the expected systematic trend in decreasing optical gap with the cesium to methylammonium A-site mixing ratio, x, in the visible region. However, the carrier mobility, as determined from time-resolved microwave conductivity measurements, trends opposite to that expected from first-principles calculations combined with Boltzmann scattering theory calculations of the carrier mobility. We propose that this is a result of increasing carrier scattering with x in (CH3NH3)1-xCsxSnBr3 due to a significant increase in the carrier density with x. By examining the dependence of the carrier density as a function of x, we infer the compositional-dependence of the average enthalpy and nonconfigurational entropy per defect. While diffraction reveals a cubic aristotypic perovskite structure as a function of x at room temperature, the pair distribution functions obtained from synchrotron X-ray total scattering from these materials are better described by symmetry-adapted displacement modes of the Pm3m crystal structure, which we attribute to a large degree of anharmonic dynamics of the atom positions. This analysis shows that CH3NH3+-rich compositions retain mostly linear Sn-Br-Sn bonding environments through the displacements, while Cs+-rich compositions lead to more significantly bent Sn-Br-Sn environments. We propose that these bent bonding arrangements in Cs-rich compositions yield a higher propensity for defect formation. This also provides a rationale for carrier trapping that gives rise to anomalous microwave transients. Together, these results provide insight into the structure-dynamics-properties relationships in this highly anharmonic system with high amplitude atomic motions and low defect formation energies.
Indium Tin-Doped Oxide (ITO) as a High Activity Water Oxidation Photoanode
Not provided.