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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Wilkinson Microwave Anisotropy Probe (WMAP) First Year Observations: TE Polarization

The Wilkinson Microwave Anisotropy Probe (WMAP) has mapped the full sky in Stokes I, Q, and U parameters at frequencies 23, 33, 41, 61, and 94 GHz. We detect correlations between the temperature and polarization maps significant at more than 10 standard deviations. The correlations are inconsistent with instrument noise and are significantly larger than the upper limits established for potential systematic errors. The correlations are present in all WAMP frequency bands with similar amplitude from 23 to 94 GHz, and are consistent with a superposition of a CMB signal with a weak foreground. The fitted CMB component is robust against different data combinations and fitting techniques. On small angular scales (theta less than 5 deg), the WMAP data show the temperature-polarization correlation expected from adiabatic perturbations in the temperature power spectrum. The data for l greater than 20 agree well with the signal predicted solely from the temperature power spectra, with no additional free parameters. We detect excess power on large angular scales (theta greater than 10 deg) compared to predictions based on the temperature power spectra alone. The excess power is well described by reionization at redshift 11 is less than z(sub r) is less than 30 at 95% confidence, depending on the ionization history. A model-independent fit to reionization optical depth yields results consistent with the best-fit ACDM model, with best fit value t = 0.17 +/- 0.04 at 68% confidence, including systematic and foreground uncertainties. This value is larger than expected given the detection of a Gunn-Peterson trough in the absorption spectra of distant quasars, and implies that the universe has a complex ionization history: WMAP has detected the signal from an early epoch of reionization.

Kogut, A.↗
NASA NTRS2003

Thermophysical Properties of Te-based II-VI Semiconductors: Reduced Algorithms for Thermal Diffusivity Determination

This paper presents methodologies for measuring the thermal diffusivity using the difference between temperatures measured at two, essentially independent, locations. A heat pulse is applied for an arbitrary time to one region of the sample; either the inner core or the outer wall. Temperature changes are then monitored versus time. The thermal diffusivity is calculated from the temperature difference versus time. No initial conditions are used directly in the final results.

Banish, R. Michael↗
NASA NTRS2003

Composition Dependence of the Hydrostatic Pressure Coefficients of the Bandgap of ZnSe(1-x)Te(x) Alloys

Optical absorption experiments have been performed using diamond anvil cells to measure the hydrostatic pressure dependence of the fundamental bandgap of ZnSe(sub 1-xTe(sub x) alloys over the entire composition range. The first and second-order pressure coefficients are obtained as a function of composition. Starting from the ZnSe side, the magnitude of both coefficients increases slowly until x approx. 0.7, where the ambient-pressure bandgap reaches a minimum. For larger values of x the coefficients rapidly approach the values of ZnTe. The large deviations of the pressure coefficients from the linear interpolation between ZnSe and ZnTe are explained in terms of the band anticrossing model.

Wu, J.↗
NASA NTRS2021

Thermoelectric System Economics - The Apex: New Paradigms in Manufacturing and Interface Performance Relationships Driving System Cost Optimizations

Thermoelectric energy recovery systems require cost-optimized designs with high thermal and thermoelectric (TE) performance to surmount common commercialization barriers controlling the acceptance of thermoelectric generator (TEG) systems. Recent work has addressed this requirement with new analytic tools and paradigms that allow integrated TEG cost-performance analysis and optimization. New work herein has identified the existence of optimized TE element design (i.e., TE element length) for minimizing TEG cost and provides design guidelines associated with critical thermal and electrical contact resistance effects and TE manufacturing sensitivities. Once optimum hot-side heat flux criteria are satisfied, this work highlights the tradeoffs between interface resistance effects and manufacturing cost effects in determining optimum-cost TE element lengths, and then quantifies the increase in optimum-cost TE lengths as manufacturing costs become more sensitive to TE element lengths. Optimized TE element design criteria and key non-dimensional design parameters (i.e., [𝐶′′′LTE/𝐶′′], [TE/con], [con/(TE,aveLTE)]) driving the design are presented and explained showing the interdependencies between manufacturing cost parameters and thermal and electrical interface impacts on integrated TE cost-performance analysis and design. Comprehensive TEG system cost-performance relationships clearly demonstrate the two parameters that most greatly impact the TEG system cost are heat exchanger costs ($/(W/K)) and TE hot side heat flux. Reducing heat exhanger cost from $1/(W/K) to $0.5/(W/K) can decrease TEG system cost by $2/W to $4/W depending on TE hot side heat fluxes from 4-10 W/cm2. The impact of TE hot side heat flux on TEG system cost is larger; reducing TE system cost by factors of 2-4 as TE hot side heat flux increases from 4 W/cm2 to high levels around 18 W/cm2. The levels of thermal contact resistance and electrical contact resistance required to even approach the critical TEG system cost level of $1/W are characterized by con = 1.0 x 10-10 -m2 and r = 0.1, respectively. This not only lowers TEG costs, but it also makes the TEG system costs less sensitive to TE manufacturing dependences on TE element length. New design paradigms and relationships create holistic, integrated TE performance-cost models that enhance understanding of crucial interrelationships between component costs, TE design parameters and material properties, heat exchanger design parameters, interfacial heat flux, and now thermal and electrical interface effects in minimizing TEG system costs.

Hendricks, Terry J.↗
NASA NTRS1994

Variability of dayside electron temperature at Venus

Langmuir probe measurements on Pioneer Venus Orbiter show that electron temperature (Te) profiles exhibit two distinct regions. The lower, but more extended region is in the main ionosphere where Te increases slowly with altitude. The other, less extended region is in the ionopause, where Te rise sharply with altitude. If horizontal magnetic fields and flux ropes in the ionosphere inhibit vertical thermal conductivity sufficiently, then the observed Te profile could be explained with EUV as the major heat source (Cravens et al., 1980). The rise in Te in the ionopause region has generally been attributed to solar wind heating (Brace and Kliore, 1991). We suggest that this sharp rise in Te is due primarily to the steep fall in electron density, Ne. If the heating rate is essentially unchanged and heat conduction is not of primary importance, then a steep rise in Te will maintain a constant electron cooling rate for a steeply falling Ne. We have observed large orbit to orbit variations in Te in the ionopause region which are found to be inversely related to changes in Ne. Variations in solar wind dynamic pressure do not seem to have a direct effect on Te, rather the effect is indirect coming through the sharp decrease in Ne.

Mahajan, K. K.↗
NASA NTRS2001

Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(x)V(1-x), alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(x),V(1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(x)Te(l-x) and ZnSe(Y)Te(1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(y)Te(1-y) alloys in the entire composition range, 0 less than or equal to y less than or equal to 1. The samples used in this study are bulk ZnSe(y)Te(1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between localized Se states and the conduction band. On the other hand we show that the large band gap reduction observed on the Se-rich side of the alloy system is a result of an interaction between the localized Te level and the valence bands. This interaction leads to the formation of a Te-like valence band edge that strongly interacts with the light hole valence band. Calculations based on a modified k p model account for the reduction of the band gap and the large increase of the spin-orbit splitting observed in Se-rich ZnSe(y)Te(l-y) alloys. We will also discuss the importance of these new results for understanding of the electronic structure and band offsets in other highly mismatched alloy systems.

Yu, Kin Man↗
NASA NTRS2001

Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(sub x)V(sub 1-x) alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(sub x)V(sub 1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(sub x)Te(sub 1-x) and ZnSe(sub y)Te(sub 1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(sub y)Te(sub 1-y) alloys in the entire composition range, y between 0 and 1. The samples used in this study are bulk ZnSe(sub y)Te(sub 1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between localized Se states and the conduction band. On the other hand we show that the large band gap reduction observed on the Se-rich side of the alloy system is a result of an interaction between the localized Te level and the valence bands. This interaction leads to the formation of a Te-like valence band edge that strongly interacts with the light hole valence band. Calculations based on a modified k(sup dot)p model account for the reduction of the band gap and the large increase of the spin-orbit splitting observed in Se-rich ZnSe(sub y)Te(sub 1-y) alloys. We will also discuss the importance of these new results for understanding of the electronic structure and band offsets in other highly mismatched alloy systems.

Yu, Kin Man↗
NASA NTRS1970

Cyclotron production of I-123: An evaluation of the nuclear reactions which produce this isotope

The reactions studied which produce I-123 directly were Sb-121(He-4,2n) I-123, Sb-121(He-3,n) I-123, Te-122(d,n) I-123, Te-122(He-4,p2n) I-123, Te-122(He-3,pn) I-123, and Te-123(He-3,p2n) I-123. Reactions which produce I-123 indirectly through the positron decay of 2.1-hour Xe-123 were Te-122(He-4,3n) Xe-123, Te-122(He-3,2n) Xe-123 and Te-123(He-3,3n) Xe-123. Use of the gas flow I-123 cyclotron target assembly is recommended for the production of I-123 with radiochemical purity greater than 99.995%.

Sodd, V. J.↗
NASA NTRS1988

Electron-temperature dependence of the recombination of electrons with O4(+) ions

The coefficient for recombination of O4(+) ions with electrons has been measured as a function of Te by analyzing electron- and ion-density decays in microwave-generated afterglow plasmas in neon-oxygen mixtures. Te values in the afterglow were elevated above those of the neutral species and ions by continuous application of microwave power. The data analysis included effects on the Te arising from inelastic collisions of electrons with the minority oxygen molecules and spatial nonuniformities of Te due to the spatially nonuniform microwave heating field. Over the temperature range Te = 143-5500 K the recombination coefficients were found to have a Te exp -z dependence, with z = 0.48 + 0.1 or - 0.05. While the values of the recombination coefficients for this dimer ion are an order of magnitude larger than those of the monomer ions, the temperature dependence is close to the Te exp -0.5 dependence predicted and often observed for diatomic ions.

Dulaney, J. L.↗