SEARCH · Engineering Papers

Results for “TRAPPING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11

All sources NASA NTRS DOE OSTI

DOE OSTI2026

Design and fabrication of ion traps for low RF power dissipation

Large surface-electrode ion traps with multiple trapping regions and junctions are a natural approach to scaling trapped ion quantum computers, supporting the connectivity and ion counts necessary for complex quantum algorithms. However, a major hurdle in this scaling is on-chip power dissipation from the applied RF voltage, which increases at a rate between linear and cubic relative to trap size, depending on whether the losses are dielectric or Ohmic. Here, we present two versions of a trap with features designed to reduce both types of RF power dissipation. The first variant contains a raised RF electrode that increases the electrode–ground distance to reduce capacitance. Different DC voltage sources are demonstrated on this trap to show that technical noise before the filter remains the dominant source of voltage noise and therefore motional heating. The second variant additionally includes a method for removing dielectric from beneath the RF electrode to further reduce dielectric losses. These traps were demonstrated at room temperature with 40 Ca + ions. In conclusion, the similar heating rates and heating rate axial frequency dependencies between 2.4 and 3.0 MHz illustrate that this dielectric modification is not detrimental to trap performance.

Sterk, J. D. [Sandia National Laboratories (SNL-NM↗

DOE OSTI2023

A simple catch: Fluctuations enable hydrodynamic trapping of microrollers by obstacles

It is known that obstacles can hydrodynamically trap bacteria and synthetic microswimmers in orbits, where the trapping time heavily depends on the swimmer flow field and noise is needed to escape the trap. Here, we use experiments and simulations to investigate the trapping of microrollers by obstacles. Microrollers are rotating particles close to a bottom surface, which have a prescribed propulsion direction imposed by an external rotating magnetic field. The flow field that drives their motion is quite different from previously studied swimmers. We found that the trapping time can be controlled by modifying the obstacle size or the colloid-obstacle repulsive potential. We detail the mechanisms of the trapping and find two remarkable features: The microroller is confined in the wake of the obstacle, and it can only enter the trap with Brownian motion. While noise is usually needed to escape traps in dynamical systems, here, we show that it is the only means to reach the hydrodynamic attractor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

SIREN: Scaling Ion-Traps by REquiring iNnovative Heterogenous Integration

The SIREN (Scaling Ion Traps by Requiring iNnovative heterogenous integration) project explores the feasibility of heterogeneous integration (HI) as a transformative approach to scaling ion traps, a critical technology for advancing quantum computers and atomic clocks. Traditional ion trap architectures face significant challenges in scalability due to limitations in optical access, fabrication techniques, and material constraints. SIREN addresses these challenges by leveraging HI, which combines different materials and fabrication processes to create more complex and efficient ion trap structures. HI integrated structures can be manufactured without compromising the process to maintain compatibility to ion traps. This project focuses on integrating a separately fabricated waveguide with a fully functional ion trap. The respective alignment between the pieces needs to be accurate to less than 2 µm to ensure that the light from the waveguide can overlap with the trapping region. The fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. The project's outcomes suggest that heterogeneous integration is a promising pathway for overcoming current scalability barriers, paving the way for the next generation of quantum technologies. SIREN's findings contribute significantly to the field, offering a scalable solution that could accelerate the development of practical quantum computers and highly accurate atomic clocks.

42 ENGINEERING↗

NASA NTRS1993

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Messenger, S. R.↗

NASA NTRS2003

Operational Experience with the Internal Thermal Control System Dual-Membrane Gas Trap

A dual-membrane gas trap is currently used to remove non-condensed gases (NCG) from the Internal Thermal Control System (ITCS) coolant on board the International Space Station. The gas trap consists of concentric tube membrane pairs, comprised of outer hydrophilic tubes and inner hydrophobic fibers. Liquid coolant passes through the outer hydrophilic membrane, which traps the NCG. The inner hydrophobic fiber allows the trapped NCG to pass through and vent to the ambient atmosphere in the cabin. The purpose of the gas trap is to prevent gas bubbles from causing depriming, overspeed, and shutdown of the ITCS pump, and the current gas trap has performed flawlessly in this regard. However, because of actual operational conditions on-orbit, its gas removal performance and operational lifetime have been affected. This paper discusses experiences with several of these dual- membrane gas traps, including on-orbit gas venting rate, effects due to the presence of nickel in the ITCS coolant, and subsequent refurbishing to remove the nickel from the gas trap.

Leimkuehler, Thomas O.↗

NASA NTRS2003

Membrane-Based Gas Traps for Ammonia, Freon-21, and Water Systems to Simplify Ground Processing

Gas traps are critical for the smooth operation of coolant loops because gas bubbles can cause loss of centrifugal pump prime, interference with sensor readings, inhibition of heat transfer, and blockage of passages to remote systems. Coolant loops are ubiquitous in space flight hardware, and thus there is a great need for this technology. Conventional gas traps will not function in micro-gravity due to the absence of buoyancy forces. Therefore, clever designs that make use of adhesion and momentum are required for adequate separation, preferable in a single pass. The gas traps currently used in water coolant loops on the International Space Station are composed of membrane tube sets in a shell. Each tube set is composed of a hydrophilic membrane (used for water transport and capture of bubbles) and a hydrophobic membrane (used for venting of air bubbles). For the hydrophilic membrane, there are two critical pressures, the pressure drop and the bubble pressure. The pressure drop is the decrease in system pressure across the gas trap. The bubble pressure is the pressure required for air bubbles to pass across the water filled membrane. A significant difference between these pressures is needed to ensure complete capture of air bubbles in a single pass. Bubbles trapped by the device adsorb on the hydrophobic membrane in the interior of the hydrophilic membrane tube. After adsorption, the air is vented due to a pressure drop of approximately 1 atmosphere across the membrane. For water systems, the air is vented to the ambient (cabin). Because water vapor can also transport across the hydrophobic membrane, it is critical that a minimum surface area is used to avoid excessive water loss (would like to have a closed loop for the coolant). The currently used gas traps only provide a difference in pressure drop and bubble pressure of 3-4 psid. This makes the gas traps susceptible to failure at high bubble loading and if gas venting is impaired. One mechanism for the latter is when particles adhere to the hydrophobic membrane, promoting formation of a water layer about it that can blind the membrane for gas transport (Figure 1). This mechanism is the most probable cause for observed failures with the existing design. The objective of this project was to devise a strategy for choosing new membrane materials (database development and procedure), redesign of the gas trap to mitigate blinding effects, and to develop a design that can be used in ammonia and Freon-21 coolant loops.

Ritchie, Stephen M. C.↗

NASA NTRS2005

A Novel Repair Technique for the Internal Thermal Control System Dual-Membrane Gas Trap

A dual-membrane gas trap is currently used to remove gas bubbles from the Internal Thermal Control System (ITCS) coolant on board the International Space Station (ISS). The gas trap consists of concentric tube membrane pairs, comprised of outer hydrophilic tubes and inner hydrophobic fibers. Liquid coolant passes through the outer hydrophilic membrane, which traps the gas bubbles. The inner hydrophobic fiber allows the trapped gas bubbles to pass through and vent to the ambient atmosphere in the cabin. The gas trap was designed to last for the entire lifetime of the ISS, and therefore was not designed to be repaired. However, repair of these gas traps is now a necessity due to contamination from the on-orbit ITCS fluid and other sources on the ground as well as a limited supply of flight gas traps. This paper describes a novel repair technique that has been developed that will allow the refurbishment of contaminated gas traps and their return to flight use.

Leimkuehler, Thomas O.↗

DOE OSTI2021

The TAMUTRAP facility: A Penning trap facility at Texas A&M University for weak interaction studies

The Texas A&M University Penning Trap (TAMUTRAP) facility aims to test the standard model of the electroweak interaction by measuring the β-ν correlation parameter, a βν , for β-delayed proton emitters in the atomic mass range 20 < A < 40. Precision measurements of this correlation parameter and, inextricably, the Fierz interference parameter, are a sensitive probe of physics beyond the standard model. Here, using off-line ion sources, the TAMUTRAP facility has been commissioned by demonstrating the ability to manipulate the trapped-ion motions as well as to perform precision mass measurements. Our novel cylindrical Penning trap – the world's largest – differs from typical designs in two key aspects: the electrode structure has an 180-mm inner diameter and an overall length of 334.89 mm leading to a uniquely small length/radius ratio l/r = 3.72; and we do not use the long end cap approximation, instead our short endcap electrodes are closed and capable of being placed at an arbitrary potential. This geometry is optimized for observing β-delayed proton decays, but is also well suited for other in-trap and post-trap precision decay experiments. In addition to presenting an overview of the TAMUTRAP facility, we demonstrate that our unique Penning trap is able to measure masses with a precision similar to typical trap designs.

47 OTHER INSTRUMENTATION↗

DOE OSTI2014

Ion traps fabricated in a CMOS foundry

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Transport of hydrogen in metals with occupancy dependent trap energies

Common diffusion trapping models for modeling hydrogen transport in metals are limited to traps with single de-trapping energies and a saturation occupancy of one. While they are successful in predicting typical mono isotopic ion implantation and thermal degassing experiments, they fail at describing recent experiments on isotope exchange at low temperatures. This paper presents a new modified diffusion trapping model with fill level dependent de-trapping energies that can also explain these new isotope exchange experiments. Density function theory (DFT) calculations predict that even mono vacancies can store between 6 and 12 H atoms with de-trapping energies that depend on the fill level of the mono vacancy. The new fill level dependent diffusion trapping model allows to test these DFT results by bridging the gap in length and time scale between DFT calculations and experiment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Enhancing capillary trapping effectiveness through proper time scheduling of injection of supercritical CO 2 in heterogeneous formations

The impact of geologic heterogeneity on capillary trapping of supercritical CO 2 (scCO 2 ) has been recognized and appraised through laboratory experimentation and modeling. However, how different injection strategies can be optimized to improve capillary trapping has not received adequate attention. Here, we present a study based on stochastic analysis to show the impact of injection scheduling on capillary trapping of scCO 2 in heterogeneous geological formations. Improvement of trapping efficiency consists of maximizing the trapped volume within a predefined secure zone of the storage formation with the goal of avoiding plume intersection with potential leakage pathways. Using knowledge acquired from physical experiments in intermediate-scale tanks with controlled heterogeneity, we conduct numerical simulations following a stochastic approach to extend the observed outcomes to a series of equally probable permeability scenarios. Our simulations involve the same combination of surrogate fluids that are used in the experiments to mimic viscosity and density contrasts between scCO 2 and brine. To account for uncertainty of formation heterogeneity, several permeability fields with three different variances and two horizontal correlation lengths are generated. The same volume of scCO 2 is emplaced using four different modes of injection scheduling. Results suggest that injection strategies aimed at enhancing capillary trapping of scCO 2 and increasing the probability of constraining the plume within a secure zone are strictly related to the specific heterogeneity of the reservoir. Finally, this preliminary theoretical finding suggests the potential for maximizing secure capillary trapping through the proper selection of injection schedule to fit the formation heterogeneity.

58 GEOSCIENCES↗

DOE OSTI2015

Treatment of Ruptured Vertebral Artery Dissecting Aneurysms Distal to the Posterior Inferior Cerebellar Artery: Stenting or Trapping?

PurposeThe treatment of ruptured vertebral artery dissecting aneurysms (VADAs) continues to be controversial. Our goal was to evaluate the safety, efficacy, and long-term outcomes of internal trapping and stent-assisted coiling (SAC) for ruptured VADAs distal to the posterior inferior cerebellar artery (supra-PICA VADAs), which is the most common subset.MethodsA retrospective review was conducted of 39 consecutive ruptured supra-PICA VADAs treated with internal trapping (n = 20) or with SAC (n = 19) at our institution. The clinical and angiographic data were retrospectively compared.ResultsThe immediate total occlusion rate of the VADAs was 80 % in the trapping group, which improved to 88.9 % at the follow-ups (45 months on average). Unwanted occlusions of the posterior inferior cerebellar artery (PICA) were detected in three trapped cases. Incomplete obliteration of the VADA or unwanted occlusions of the PICA were detected primarily in the VADAs closest to the PICA. In the stenting group, the immediate total occlusion rate was 47.4 %, which improved to 100 % at the follow-ups (39 months on average). The immediate total occlusion rate of the VADAs was higher in the trapping group (p < 0.05), but the later total occlusion was slightly higher in the stenting group (p > 0.05).ConclusionsOur preliminary results showed that internal trapping and stent-assisted coiling are both technically feasible for treating ruptured supra-PICA VADAs. Although not statistically significant, procedural related complications occurred more frequently in the trapping group. When the VADAs are close to the PICA, we suggest that the lesions should be treated using SAC.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

DOE OSTI2018

A Linear Ion Trap with an Expanded Inscribed Diameter to Improve Optical Access for Fluorescence Spectroscopy

We report a custom-geometry linear ion trap designed for fluorescence spectroscopy of gas-phase ions at ambient to cryogenic temperatures. Laser-induced fluorescence from trapped ions is collected from between the trapping rods, orthogonal to the excitation laser that runs along the axis of the linear ion trap. To increase optical access to the ion cloud, the diameter of the round trapping rods is 80% of the inscribed diameter, rather than the roughly 110% used to approximate purely quadrupolar electric fields. To encompass as much of the ion cloud as possible, the first collection optic has a 25.4 mm diameter and a numerical aperture of 0.6. The choice of geometry and collection optics yields 10{sup 7} detected photons/s from trapped rhodamine 6G ions. The trap is coupled to a closed-cycle helium refrigerator, which in combination with two 50 Ohm heaters enables temperature control to below 25 K on the rod electrodes. The purpose of the instrument is to broaden the applicability of fluorescence spectroscopy of gas-phase ions to cases where photon emission is a minority relaxation pathway. Such studies are important to understand how the microenvironment of a chromophore influences excited state charge transfer processes. .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2018

Multi-electrode Harmonized Kingdon Traps

Based on the analysis of the results of the study of various designs of multi-electrode harmonized Kingdon traps, we propose a new type of trap with two merged internal electrodes that has the ability to capture and accumulate ions formed inside. We also investigated the influence of inaccuracies in the manufacture of the electrodes on the field inside such trap. The four-electrode trap, which actually degenerates into a two-electrode device with traces of two other electrodes present at the ends of the internal electrodes (their splitting) has been found as the less sensitive to inaccuracies caused by manufacturing and cutting the ends of trap electrodes. We show that a mass spectrometer with a relatively high resolving power can be created on the basis of such a trap. The creation of the traps requires the manufacture of complex electrodes with demanded accuracy of their surfaces. This becomes possible with the advent of 3D printers. .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2022

Hydrogen trapping and storage in the group IVB-VIB transition metal carbides

The transition metal carbides have been known to act as traps for hydrogen in steels as well as potential materials for hydrogen storage. Despite numerous experimental and a few theoretical studies, what impacts hydrogen trapping and storage in the transition metal carbides is not well understood. In this work, we use density functional theory to systematically investigate the bulk trapping and storage capabilities of the transition metal carbides. We specifically examine how trapping and storage changes with the transition metal, from the group IVB to group VIB, carbon concentration, and structure. Our results demonstrate a strong correlation between the trap energy and the number of valence electrons in the transition metal, suggesting that the group IVB transition metal carbides are the best carbides for trapping and storage. Hydrogen preferentially sits at octahedral interstices, e.g., the carbon vacancies, in the structure except in certain cases near the Me 2 C concentration when tetrahedral interstices, devoid of nearest neighbor carbon, can become more favorable. Our results further demonstrate that the lower the carbon concentration, the more hydrogen the transition metal carbide can store. These results demonstrate which carbides will act as the best traps for hydrogen.

08 HYDROGEN↗