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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Advanced detectors and signal processing for bubble memories

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Kryder, M. H.↗
NASA NTRS1985

Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low Earth orbit

Ion beam sputter-deposited thin films of Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of a fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low Earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

Banks, B. A.↗
NASA NTRS1985

Chemical structure of interfaces

The interfacial structure of silicon/dielectric and silicon/metal systems is particularly amenable to analysis using a combination of surface spectroscopies together with a variety of chemical structures of Si/SiO2, Si/SiO2Si3N4, Si/Si2N2O, Si/SiO2/Al, and Si/Native Oxide interfaces using high resolution (0.350 eV FWHM) X ray photoelectron spectroscopy. The general structure of these dielectric interfaces entails a monolayer chemical transition layer at the Si/dielectric boundary. Amorphous Si substrates show a wide variety of hydrogenated Si and Si(OH) sub x states that are not observed in thermal oxidation of single crystal material. Extended SiO2 layers greater than 8 A in thickness are shown to be stoichiometric SiO2, but to exhibit a wide variety of local network structures. In the nitrogen containing systems, an approach to stoichiometric oxynitride compounds with interesting impurity and electron trapping properties are seen. In native oxides, substantial topographical nonuniformity in oxide thickness and composition are found. Analysis of metal/oxide interfacial layers is accomplished by analytical removal of the Si substrate by UHV XeF2 dry etching methods.

Grunthaner, F. J.↗
NASA NTRS1985

Hot corrosion of sintered alpha-SiC at 1000 C

The hot corrosion of sintered alpha-SiC by thin films of Na2SO4 and Na2CO3 was studied at 1000 C in controlled gas atmospheres. Under all conditions, corrosion led to 10 to 20 times the amount of SiO2 formed in pure oxidation after a 48-h exposure. In addition, small amounts of sodium silicate formed. Melts of Na2SO4/SO3 caused uniform pitting of the SiC substrate; Na2CO3/CO2 melts caused localized pitting and grain-boundary attack. In all cases, the protective SiO2 layer dissolved to form silicate, leading to corrosion. In the sulfate case, free carbon in the SiC promotes this process. In all cases the presence of liquid films is responsible for rapid transport rates and the subsequent rapid reaction.

Jacobson, N. S.↗
NASA NTRS1986

Etching Silicon Films With Xenon Difluoride

Microscopic circuit structures prepared for probing. Xenon difluoride removes relatively large amounts of silicon from integratedcircuit or solar-cell structures while leaving SiO2, Si3N4, Al2O3, and other compounds intact. In Etching Apparatus, solid XeF2 sublimated in vacuum, then allowed to flow over sample at controlled rate and pressure. Wafer etched from back to expose SiO2 and Al layers for spectroscopic analysis of SiO2/Al interface. Using XeF2 technique, silicon wafer with oxide layer reduced in thickness from standard 300 micrometer to as little as 10 nanometer without adversely affecting oxide.

Hecht, M. H.↗
NASA NTRS1985

Sol-Gel Glasses

Multicomponent homogeneous, ultrapure noncrystalline gels/gel derived glasses are promising batch materials for the containerless glass melting experiments in microgravity. Hence, ultrapure, homogeneous gel precursors could be used to: (1) investigate the effect of the container induced nucleation on the glass forming ability of marginally glass forming compositions; and (2) investigate the influence of gravity on the phase separation and coarsening behavior of gel derived glasses in the liquid-liquid immiscibility zone of the nonsilicate systems having a high density phase. The structure and crystallization behavior of gels in the SiO2-GeO2 as a function of gel chemistry and thermal treatment were investigated. As are the chemical principles involved in the distribution of a second network former in silica gel matrix being investigated. The procedures for synthesizing noncrystalline gels/gel-monoliths in the SiO2-GeO2, GeO2-PbO systems were developed. Preliminary investigations on the levitation and thermal treatment of germania silicate gel-monoliths in the Pressure Facility Acoustic Levitator were done.

Mukherjee, S. P.↗
NASA NTRS1986

Manufacture of high-density ceramic sinters

High density ceramic sinters are manufactured by coating premolded or presintered porous ceramics with a sealing material of high SiO2 porous glass or nitride glass and then sintering by hot isostatic pressing. The ceramics have excellent abrasion and corrosion resistances. Thus LC-10 (Si3N2 powder) and Y2O3-Al2O3 type sintering were mixed and molded to give a premolded porous ceramic (porosity 37%, relative bulk density 63%). The ceramic was dipped in a slurry containing high SiO2 porous glass and an alcohol solution of cellulose acetate and dried. The coated ceramic was treated in a nitrogen atmosphere and then sintered by hot isostatic pressing to give a dense ceramic sinter.

Hibata, Y.↗
NASA NTRS1985

Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low earth orbit

Ion beam sputter-deposited thin films at Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board Shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

Banks, B. A.↗
NASA NTRS1986

Kinetics and mechanism of corrosion of SiC by molten salts

Corrosion of sintered alpha-SiC under thin films of Na2CO3/CO2, Na2SO4/O2, and Na2SO4/SO3 was investigated at 1000 C. Chemical analysis was used to follow silicate and silica evolution as a function of time. This information coupled with morphology observations leads to a detailed corrosion mechanism. In all cases the corrosion reactions occur primarily in the first few hours. In the Na2CO3/CO2 case, rapid oxidation and dissolution lead to a thick layer of silicate melt in about 0.25 h. After this, silica forms a protective layer on the carbide. In the Na2SO4/O2 case, a similar mechanism occurs. In the Na2SO4/SO3 case, a porous nonprotective layer of SiO2 grows directly on the carbide, and a silicate melt forms above this. In addition, SiO2 and regenerated Na2SO4 form at the melt/gas interface due to reaction of silicate with SO3 and SO2 + O2. The reaction slows when the lower silica layer becomes nonporous.

Jacobson, N. S.↗
NASA NTRS1987

An evaluation of candidate oxidation resistant materials

Ground based testing of materials considered for Kapton solar array blanket protection, graphite epoxy structural member protection, and high temperature radiators was performed in an RF plasma asher. Ashing rates for Kapton were correlated with rates measured on STS-8 to determine the exposure time equivalent to one year in low Earth orbit (LEO) at a constant density space station orbital flux. Protective coatings on Kapton from Tekmat, Andus Corporation, and LeRC were evaluated in the plasma asher and mass loss rates per unit area were measured for each sample. All samples evaluated provided some protection to the underlying surface but ion beam sputter deposited samples of SiO2 and SiO2 with 8% polytetrafluoroethylene (PTFE) showed no evidence of degradation after 47 hours of exposure. Mica paint was evaluated as a protective coating for graphite epoxy structural members. Mica appears to be resistant to attack by atomic oxygen but only offers some limited protection as a paint because the paint vehicles evaluated to date were not resistant to atomic oxygen. Four materials were selected for evaluation as candidate radiator materials: stainless steel, copper, niobium-1% zirconium, and titanium-6% aluminum-4% vanadium. These materials were surface textured by various means to improve their emittance. Emittances as high as 0.93 at 2.5 microns for stainless steel and 0.89 at 2.5 microns for Nb-1 Zr were obtained from surface texturing. There were no significant changes in emittance after asher exposure.

Rutledge, Sharon↗
NASA NTRS1987

Front surface passivation of silicon solar cells with antireflection coating

It is demonstrated that the deposition and postdeposition sintering of an antireflection (AR) coating in hydrogen acts to passivate silicon solar cells. Cells with and without an SiO2 passivating layer, coated with a TiO(x)/Al2O3 AR coating, showed comparable enhancements in short-wavelength spectral response and in open-circuit voltage Voc after sintering at 400 C for 5 min in a hydrogen ambient. The improvement in Voc of cells without SiO2 is attributed to front-surface passivation by the AR coating during processing.

Crotty, G.↗
NASA NTRS1987

Oxygen-18 tracer study of the passive thermal oxidation of silicon

This work focuses on the thermal oxidation of silicon near 1273 K using the double-tracer oxidation method. The results confirm that oxidation occurs by the transport of electrically neutral nonnetwork oxygen through the interstitial space of the vitreous silica (v-SiO2) scale. Simultaneously, self- (or isotopic-) diffusion occurs in the network, resulting in characteristic isotopic fraction distributions near the gas-scale interface. The self-diffusion coefficients calculated from these profiles agree with those reported for tracer diffusion in v-SiO2, and the diffusion coefficient calculated from the scale growth is consistent with reported O2 permeation data. An important parameter that describes the double-oxidation behavior is a ratio relating the scale thickness grown during the second oxidation, the network self-diffusion coefficient for oxygen, and the time of the second oxidation.

Cawley, J. D.↗
NASA NTRS1987

The friction and wear of TPS fibers

The sliding friction behavior of single filaments of SiO2, SiC, and an aluminoborosilicate has been determined. These fibers are used in thermal protection systems (TPS) and are subject to damage during weaving and aero-maneuvering. All fibers exhibited stick-slip friction indicating the successive formation and rupture of strong junctions between the contacting filaments. The static frictional resistance of the sized SiC filament was 4X greater than for the same filament after heat cleaning. This result suggests that the sizing is an organic polymer with a high shear yield strength. Heat cleaning exposes the SiC surface and/or leaves an inorganic residue so that the adhesional contact between filaments has a low fracture energy and frictional sliding occurs by brittle fracture. The frictional resistances of the sized and heat cleaned SiO2 and glass filaments were all comparable to that of the heat cleaned SiC. It would appear that the sizings as well as the heat cleaned surfaces of the silica and glass have low fracture energies so that the sliding resistance is determined by brittle fracture.

Bascom, W. D.↗
NASA NTRS1988

Scanning tunneling microscopy characterization of the geometric and electronic structure of hydrogen-terminated silicon surfaces

Scanning tunneling microscopy (STM) methods are used to characterize hydrogen-terminated Si surfaces prepared by a novel method. The surface preparation method is used to expose the Si-SiO2 interface. STM images directly reveal the topographic structure of the Si-SiO2 interface. The dependence of interface topography on oxide preparation conditions observed by STM is compared to the results of conventional surface characterization methods. Also, the electronic structure of the hydrogen-terminated surface is studied by STM spectroscopy. The near-ideal electronic structure of this surface enables direct tunnel spectroscopy measurements of Schottky barrier phenomena. In addition, this method enables probing of semiconductor subsurface properties by STM.

Kaiser, W. J.↗
NASA NTRS1989

Glass Coats For Hot Isostatic Pressing

Surface voids sealed from pressurizing gas. Coating technique enables healing of surface defects by hot isostatic pressing (HIP). Internal pores readily closed by HIP, but surface voids like cracks and pores in contact with pressurizing gas not healed. Applied to casting or weldment as thick slurry of two glass powders: one melts at temperature slightly lower than used for HIP, and another melts at higher temperature. For example, powder is glass of 75 percent SiO2 and 25 percent Na2O, while other powder SiO2. Liquid component of slurry fugitive organic binder; for example, mixture of cellulose acetate and acetone. Easy to apply, separates voids from surrounding gas, would not react with metal part under treatment, and easy to remove after pressing.

Ecer, Gunes M.↗
NASA NTRS1988

Hot corrosion of ceramic engine materials

A number of commercially available SiC and Si3N4 materials were exposed to 1000 C in a high velocity, pressurized burner rig as a simulation of a turbine engine environment. Sodium impurities added to the burner flame resulted in molten Na2SO4 deposition, attack of the SiC and Si4N4 and formation of substantial Na2O-x(SiO2) corrosion product. Room temperature strength of the materials decreased. This was a result of the formation of corrosion pits in SiC, and grain boundary dissolution and pitting in Si3N4. Corrosion regimes for such Si-based ceramics have been predicted using thermodynamics and verified in rig tests of SiO2 coupons. Protective mullite coatings are being investigated as a solution to the corrosion problem for SiC and Si3N4. Limited corrosion occurred to cordierite (Mg2Al4Si5O18) but some cracking of the substrate occurred.

Fox, Dennis S.↗
NASA NTRS1988

Pan-African alkali granites and syenites of Kerala as imprints of taphrogenic magmatism in the South Indian shield

Granite and syenite plutons with alkaline affinities ranging in age from 550 to 750 Ma sporadically puncture the Precambrian granulites of the Kerala region. All the bodies are small (20 to 60 sq km), E-W to NW-SE elongated elliptical intrusives with sharp contacts and lie on or close to major late Proterozoic lineaments. Geochemical plots of A-F-M and An-Ab-Or relations show an apparent alkali enrichment trend on the former, but the plutons define relatively distinct fields on the latter. Most of the plutons are adamellitic to granitic by chemistry. The variations of SiO2 with log sub 10 K2O/MgO (1) brings out the distinct alkaline nature of the plutons. Some of the granites are extremely potassic, like the Peralimala pluton, which shows up to 11.8 percent K2O. On a SiO2-Al2O3-Na2O+K2O (mol percent) plot, the plutons vary from peraluminous to peralkaline, but none are nepheline normative. Low MgO, low to moderate CaO and high Fe2O3/FeO values are other common characteristics. Among trace elements, depletion of Ba, Sr and Rb with high K/Ba and K/Rb values are typical. Overall, the plutons show a trend of decreasing K/Rb ratio with increasing K content. Individual plutons show more clearly defined trends similar to those from granitic masses characterized by plagioclase fractionation.

Santosh, M.↗
NASA NTRS1989

Isotopic study of oxygen diffusion in oxide coatings

Diffusion of oxygen in thin films of silicon dioxide was studied using oxygen isotopically enriched in oxygen of atomic mass 18 (O-18). This subject is of interest because thin films of dielectrics such as SiO2 are proposed for use as a protective coatings for solar mirrors in low Earth orbit, which is a strongly oxidizing environment. Films of this material were prepared with a direct current magnetron using reactive sputtering techniques. To produce (O-18)- enriched SiO2, a standard 3.5-in.-diameter silicon wafer was reactively sputtered using (O-18)-enriched (95 percent) oxygen as the plasma feed gas. The films were characterized using Rutherford backscattering and Secondary Ion Mass Spectrometer (SIMS) to establish stoichiometry and purity. Subsequently, the films were exposed to an air-derived oxygen plasma in a standard laboratory plasma reactor for durations of up to 10 hr. The concentration ratio of O-16 as a function of depth was determined using SIMS profiling and compared to a baseline, nonplasma exposed sample. A value for the diffusivity of oxygen near the surface of these films was obtained and found to be about 10(-15)sq cm/sec.

Gulino, Daniel A.↗