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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Performance of epitaxial back surface field cells

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length.

Brandhorst, H. W., Jr.↗
NASA NTRS1987

CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

Results on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.

Nouhi, A.↗
NASA NTRS1993

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗
NASA NTRS1997

Test Report - Fault Current Through Graphite Filament Reinforced Plastic

Tests were performed to determine the damage to samples of composite material when a current carrying wire is shorted to the surface of the composite material, and to determine whether enough current can flow through the material to blow a fuse before damage can occur. Fault current tests were performed on samples of graphite epoxy materials. Samples consisted of six layers of IM7 graphite fiber mat in Hercules 8552 epoxy resin. A variable power supply provided up to 35 amps of current. The high voltage side of the power supply was attached to a wire at the end of a hinged arm, and the low side was attached to the edge of the sample. To test joints, the return was connected to the edge of one sample, and the high side was shorted to the top of the other sample. Tests show that when current exceeds approximately 5 amps, the graphite glows, and the epoxy melts out at the shorted contact. At higher current levels the epoxy burns. At voltages above 15 volts the epoxy outer coat is easily broken, and fire, flame, and a rise in current occur suddenly. When joints are introduced, resistance is increased, and the maximum current resulting from a short circuit to the graphite epoxy is reduced. This condition can easily result in fault current lower than the circuit breaker limit and higher than the 5 amp ignition level. The shorting contact and the joint become hot spots with melting epoxy, smoke, and fire.

Evans, R. W.↗
NASA NTRS1985

Method and apparatus for I-V data acquisition from solar cells

A method and apparatus for logging current-voltage (I-V) characteristic d of a solar cell module (10) in two modes using a portable instrument. One mode controls the load current through a circuit (36) in 256 equal intervals while voltage is measured from open circuit to at least halfway into the knee of the curve and the other mode controls the load voltage through a circuit (34) in 256 equal intervals from the lowest voltage measurement possible (short circuit) to at least halfway into the knee of the curve, under control of a microcomputer (12). All measurements are packed by discarding each measurement that is within 0.5% of the value predicted from two previous measurements, except every ninth (9th) measurement which is retained. The remaining data is further packed into a memory block of a detachable storage medium (14) by recording the data points in sequence following a header containing data common to all points, with each point having the value of the controlled parameter recorded as the number of increments from the previous point recorded followed by the measured value. The detachable storage medium is preferably a solid state device for reliability, and is transferable to a playback terminal which unpacks the data for analysis and display.

Cole, Steven W.↗
NASA NTRS1974

Performance of epitaxial back surface field cells

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 ohm-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 ohm-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1-MeV electrons to a fluence of 5 times 10 to the 15th electrons per sq cm. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short-circuit currents were within 2% of the prediction. Calculations are presented for optimum cell performance as functions of epitaxial layer thickness, radiation fluence, and substrate diffusion length.

Brandhorst, H. W., Jr.↗
NASA NTRS1980

Voltage controller/current limiter for ac

Circuit protects ac power systems for overload failures, limits power surge and short-circuit currents to 150 percent of steady state level, regulates ac output voltage, and soft starts loads. Limiter generates dc error signal in response to line fluctuations and dumps power when overload is reached. Device is inserted between ac source and load.

Wu, T. T.↗
NASA NTRS1992

Electronic Load Bank

Electronic load-bank circuit provides pulsed or continuous low-resistance load to imitate effect of short circuit on Ni/H2 or other electrochemical power cells. Includes safety/warning feature and taps for measurement of cell-output voltage and current.

Huston, Steven W.↗
NASA NTRS2003

A Comparison of Two Panasonic Lithium-Ion Batteries and Cells for the IBM Thinkpad

The IBM Thinkpad 760XD has been used in the Orbiter and International Space Station since 2000. The Thinkpad is powered by a Panasonic Li-ion battery that has a voltage of 10.8 V and 3.0 Ah capacity. This Thinkpad is now being replaced by the IBM Thinkpad A31P which has a Panasonic Li-ion battery that has a voltage of 10.8 V and 4.0 Ah capacity. Both batteries have protective circuit boards. The Panasonic battery for the Thinkpad 760XD had 12 Panasonic 17500 cells of 0.75 Ah capacity in a 4P3S cOnfiguration. The new Panasonic battery has 6 Panasonic 18650 cells of 2.0 Ah capacity in a 2P3S configuration. The batteries and cells for both models have been evaluated for performance and safety. A comparison of the cells under similar test conditions will be presented. The performance of the cells has been evaluated under different rates of charge and discharge and different temperatures. The cells have been tested under abuse conditions and the safety features in the cells evaluated. The protective circuit board in the battery was also tested under conditions of overcharge, overdischarge, short circuit and unbalanced cell configurations. The results of the studies will be presented in this paper.

Jeevarajan, Judith A.↗
NASA NTRS1988

Photon degradation of AlGaAs/GaAs solar cells

The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 28 C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.

Anspaugh, Bruce↗
NASA NTRS1993

InGaAs concentrator cells for laser power converters and tandem cells

In(0.53)Ga(0.47)As N-on-P concentrator cells were made as part of an effort to develop 1.315 micron laser power converters. The 1.315 micron laser power conversion efficiency was estimated as 29.4 percent (at 5.57 W/cm(sup 2)) based on an 86 percent measured external quantum efficiency at 1.315 microns, and a measured open circuit voltage (484 mV), and fill-factor (67 percent) at the equivalent AM0 short-circuit photocurrent (5.07 A/cm(sup 2)). A 13.5 percent percent AMO efficiency was achieved at 89 suns and 25 C. Measured one-sun and 100-sun AMO efficiency, log I-V analysis, and quantum efficiency are presented for InGaAs cells with and without InP windows to passivate the front surface. Windowed cells performed better at concentration than windowless cells. Lattice mismatch between InGaAs epilayers and InP substrate was less than 800 ppm. Theoretical efficiency is estimated for 1.315 microns laser power converters versus the bandgap energy. Adding aluminum to InGaAs to form In(x)Al(y)Ga(1-x-y)As is presented as a way to achieve an optimal bandgap for 1.315 microns laser power conversion.

Wojtczuk, S.↗
NASA NTRS1987

Further study of inversion layer MOS solar cells

A group of inversion layer MOS solar cells has been fabricated. The highest value of open-circuit voltage obtained for the cells is 0.568V. One of the cells has produced a short-circuit current of 79.6 mA and an open-circuit voltage of 0.54V. It is estimated that the actual area AMO efficiency of this cell is 6.6 percent with an assumed value of 0.75 for its fill factor. Efforts made for fabricating an IL/MOS cell with reasonable efficiencies are reported. Future work for 4 sq cm IL cells and 25 sq cm IL cells is discussed.

Ho, Fat Duen↗
NASA NTRS2007

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

Lee, H. S.↗
NASA NTRS1988

Dual-Band Microstrip Antenna With Reactive Loading

Effective but bulky coaxial stub replaced. Short-circuited microstrip transmission line serves as reactive loading element for microstrip antenna. Constructed integrally with stripline radiating element, shorted line preserves low microstrip profile and enables tuning of antenna for two-band operation.

Davidson, Shayla E.↗
NASA NTRS2012

Dust-Tolerant Intelligent Electrical Connection System

Faults in wiring systems are a serious concern for the aerospace and aeronautic (commercial, military, and civilian) industries. Circuit failures and vehicle accidents have occurred and have been attributed to faulty wiring created by open and/or short circuits. Often, such circuit failures occur due to vibration during vehicle launch or operation. Therefore, developing non-intrusive fault-tolerant techniques is necessary to detect circuit faults and automatically route signals through alternate recovery paths while the vehicle or lunar surface systems equipment is in operation. Electrical connector concepts combining dust mitigation strategies and cable diagnostic technologies have significant application for lunar and Martian surface systems, as well as for dusty terrestrial applications. The dust-tolerant intelligent electrical connection system has several novel concepts and unique features. It combines intelligent cable diagnostics (health monitoring) and automatic circuit routing capabilities into a dust-tolerant electrical umbilical. It retrofits a clamshell protective dust cover to an existing connector for reduced gravity operation, and features a universal connector housing with three styles of dust protection: inverted cap, rotating cap, and clamshell. It uses a self-healing membrane as a dust barrier for electrical connectors where required, while also combining lotus leaf technology for applications where a dust-resistant coating providing low surface tension is needed to mitigate Van der Waals forces, thereby disallowing dust particle adhesion to connector surfaces. It also permits using a ruggedized iris mechanism with an embedded electrodynamic dust shield as a dust barrier for electrical connectors where required.

Lewis, Mark↗
NASA NTRS1970

Transistor current and voltage limiting switch

Limiting circuit protects the main power supply of electronic modules and limits the current drawn by each module should a short circuit occur. It limits current within one mA when used with direct current of either polarity, or with pulse or ac power sources from direct current to 100 kHz.

Hilbert, E. E.↗
NASA NTRS2010

InGaP Heterojunction Barrier Solar Cells

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Welser, Roger E.↗
NASA NTRS1966

Solid state circuit controls direction, speed, and braking of dc motor

Full-wave bridge rectifier circuit controls the direction, speed, and braking of a dc motor. Gating in the circuit of Silicon Controlled Rectifiers /SCRS/ controls output polarity and braking is provided by an SCR that is gated to short circuit the reverse voltage generated by reversal of motor rotation.

Hanna, M. F.↗