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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

PVwindow (Photovoltaic Window Simulator) [SWR-22-01]

PVwindow simulates photovoltaic window properties by allowing the user build stacks of thin film materials that compose the window layers. The only needed inputs are the complex refractive indices and thicknesses of the materials. The software will simulate the optical transmission, front reflection, and back reflection of the stack using the transfer matrix method. Properties specific to PV window optics such as visible transmittance and color are also calculated. The optics code extracts the number of absorbed photons in the PV absorber layer and solves the single diode equation to yield theoretical photovoltaic metrics such as power conversion efficiency, fill factor, open circuit voltage, and short circuit current of the PV window when illuminated at an arbitrary angle or from either side of the stack. The software tool ultimately allows researchers to design photovoltaic windows and simulate their properties. The software also exports files that can be read into LBL Window software or into the EnergyPlus and Open Studio building energy modeling software to determine larger scale energy impacts of PV window integration.

Wheeler, Lance↗
DOE OSTI2022

iv_parems [SWR-22-79]

iv_parems follows the ASTM E1036 standard to extract parameters (open-circuit voltage, short-circuit current, maximum power point) from photovoltaic current-voltage characteristics.

Deceglie, Michael↗
DOE OSTI2025

OPET Hardware (Open PV Electrical Tool Hardware) [SWR-25-42]

OPET (Open-source Photovoltaic Electrical Tool) is used for performance measurements of solar photovoltaic (PV) devices in the field under natural sunlight or in the lab under artificial light. Its primary use is in research and development of solar cells and modules, specifically in reliability and durability research of PV devices. Some features and functions include: -IV curve measurements with linear or cosine distributed measurement points -PV device active loading at open circuit voltage (Voc), short circuit current (Isc) and maximum power point (Pmp) -Bias power supply to overcome series resistance in contact wires for Isc measurements and loading -PV voltage input in five ranges from 1V to 100V -PV current input ranges -Low current version, six current ranges from 1.1mA to 340mA -High current version, six current ranges from 50mA to 15A -IO ports for I2C and SPI temperature sensor Arduino extension boards -Integrated fan control This repository contains everything relating to the hardware of the OPET device. If you are looking for the firmware or software repositories, links are below: https://github.com/NREL/opet-firmware https://github.com/NREL/opet-control

McDanold, Byron [National Renewable Energy Laborat↗
NASA NTRS1976

Analysis of epitaxial drift field N on P silicon solar cells

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Baraona, C. R.↗
NASA NTRS1978

A simple theory of back surface field /BSF/ solar cells

A theory of an n-p-p/+/ junction is developed, entirely based on Shockley's depletion layer approximation. Under the further assumption of uniform doping the electrical characteristics of solar cells as a function of all relevant parameters (cell thickness, diffusion lengths, etc.) can quickly be ascertained with a minimum of computer time. Two effects contribute to the superior performance of a BSF cell (n-p-p/+/ junction) as compared to an ordinary solar cell (n-p junction). The sharing of the applied voltage among the two junctions (the n-p and the p-p/+/ junction) decreases the dark current and the reflection of minority carriers by the builtin electron field of the p-p/+/ junction increases the short-circuit current. The theory predicts an increase in the open-circuit voltage (Voc) with a decrease in cell thickness. Although the short-circuit current decreases at the same time, the efficiency of the cell is virtually unaltered in going from a thickness of 200 microns to a thickness of 50 microns. The importance of this fact for space missions where large power-to-weight ratios are required is obvious.

Von Roos, O.↗
NASA NTRS1981

Nickel-doped silicon for solar cells

Large grain boundaries in polycrystals act as gettering centers for nickel precipitates, improving cell performance. Effects are described in report. Data on open-circuit voltage, short-circuit current, maximum power, and conversion efficiency for illuminated cells are compared with values for undoped cells. Dark forward current versus voltage is also measured for cell types.

Salama, A. M.↗
NASA NTRS1982

Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon

Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.

Dharmadhikari, V. S.↗
NASA NTRS1986

Reliability of photovoltaic modules

In order to assess the reliability of photovoltaic modules, four categories of known array failure and degradation mechanisms are discussed, and target reliability allocations have been developed within each category based on the available technology and the life-cycle-cost requirements of future large-scale terrestrial applications. Cell-level failure mechanisms associated with open-circuiting or short-circuiting of individual solar cells generally arise from cell cracking or the fatigue of cell-to-cell interconnects. Power degradation mechanisms considered include gradual power loss in cells, light-induced effects, and module optical degradation. Module-level failure mechanisms and life-limiting wear-out mechanisms are also explored.

Ross, R. G., Jr.↗
NASA NTRS1988

p/n InP homojunction solar cells with a modified contacting scheme by liquid phase epitaxy

p/n InP homojunction solar cells with a modified contacting scheme have been fabricated from wafers grown by liquid phase epitaxy. A p(+)-In(0.53)Ga(0.47)As contacting layer is incorporated in the cell structure to reduce contact resistance and to eliminaate surface spiking problems at the front surface. The highest conversion efficiency (total area) obtained under AM0 illumination is 15.0 percent. The corresponding open-circuit voltage, short-circuit current density, and fill factor for the best cell are 0.866 V, 29.3 mA/sq cm, and 81.0 percent, respectively.

Choi, K. Y.↗
NASA NTRS1991

Calculated performance of p(+)n InP solar cells with In(0.52)Al(0.48)As window layers

The performance of indium phosphide solar cells with lattice matched wide band-gap In(0.52)Al(0.48)As window layers was calculated using the PC-1D computer code. The conversion efficiency of p(+)n InP solar cells is improved significantly by the window layer. No improvement is seen for n(+)p structures. The improvement in InP cell efficiency was studied as a function of In(0.52)Al(0.48)As layer thickness. The use of the window layer improves both the open circuit voltage and short circuit current.For a typical In(0.52)Al(0.48)As window layer thickness of 20 nm, the cell efficiency improves in excess of 27 percent to a value of 18.74 percent.

Jain, R. K.↗
NASA NTRS1992

Extra high speed modified Lundell alternator parameters and open/short-circuit characteristics from global 3D-FE magnetic field solutions

The combined magnetic vector potential - magnetic scalar potential method of computation of 3D magnetic fields by finite elements, introduced in a companion paper, is used for global 3D field analysis and machine performance computations under open-circuit and short-circuit conditions for an example 14.3 kVA modified Lundell alternator, whose magnetic field is of intrinsic 3D nature. The computed voltages and currents under these machine test conditions were verified and found to be in very good agreement with corresponding test data. Results of use of this modelling and computation method in the study of a design alteration example, in which the stator stack length of the example alternator is stretched in order to increase voltage and volt-ampere rating, are given here. These results demonstrate the inadequacy of conventional 2D-based design concepts and the imperative of use of this type of 3D magnetic field modelling in the design and investigation of such machines.

Wang, R.↗
NASA NTRS1996

Solar Dynamic Power System Fault Diagnosis

The objective of this research is to conduct various fault simulation studies for diagnosing the type and location of faults in the power distribution system. Different types of faults are simulated at different locations within the distribution system and the faulted waveforms are monitored at measurable nodes such as at the output of the DDCU's. These fault signatures are processed using feature extractors such as FFT and wavelet transforms. The extracted features are fed to a clustering based neural network for training and subsequent testing using previously unseen data. Different load models consisting of constant impedance and constant power are used for the loads. Open circuit faults and short circuit faults are studied. It is concluded from present studies that using features extracted from wavelet transforms give better success rates during ANN testing. The trained ANN's are capable of diagnosing fault types and approximate locations in the solar dynamic power distribution system.

Momoh, James A.↗
DOE OSTI2022

A Lyapunov-Based Generalized Dc-Side Controller Design for PV-Connected Systems: Preprint

The objective of this paper is to realize a universal dc-side controller for photovoltaic (PV) systems where the control is agnostic to the downstream converter configuration. To achieve this, the downstream power converter and its controls are manipulated into an effective power control loop that is then cast into a generalized multi-loop design framework. On the dc side, a nonlinear small-signal model of the PV input is realized exclusively in terms of PV datasheet parameters (i.e., open-circuit voltage, short-circuit current, and maximum power point). Finally, a linear controller is used to modulate the dc-side PV system with the generic downstream power controller. A Lyapunov candidate is proposed to analyze the stability of the interconnected system and provide a streamlined approach for the controller design. The proposed design is validated on a 1-kVA experimental setup that interfaces a PV module to the grid.

dc-dc control↗
DOE OSTI2023

Direct current momentary circuit interrupter

A momentary circuit interrupter in series connection with a mechanical switch to provide protection against short circuit faults in a DC power circuit. The momentary circuit interrupter injects a transient voltage pulse via a pulse transformer to reduce a DC fault current to near zero in a DC circuit branch, thus allowing the mechanical switch to disconnect the faulty branch under a near zero-current condition. The power electronic circuit on the primary side of the transformer controls the discharge of a plurality of pre-charged capacitors to generate the transient voltage pulse during the fault interruption process, but otherwise does not incur any power loss during normal operation. The secondary winding of the pulse transformer conducts the main DC current, and is highly conductive to minimize the conduction power loss. The invention provides ultrafast response to a short circuit fault (even faster than solid-state circuit breakers and much faster than hybrid circuit breakers), significantly reduced overcurrent stress in the power system, and/or ultralow conduction power losses.

Shen, Zheng John↗
DOE OSTI2021

Unlocking the Electrochemical–Mechanical Coupling Behaviors of Dendrite Growth and Crack Propagation in All-Solid-State Batteries

Dendrite growth and crack propagation are two major hurdles on the road towards the large-scale commercialization of lithium metal all-solid-state batteries (ASSBs). Due to the high multiphysics coupled nature of the underlying dendrite growth mechanism, understanding it has been difficult. Herein, for the first time, an electrochemical-mechanical model is established that directly couples dendrite growth and crack propagation from a physics-based perspective at the cell level. Results reveal that overpotential-driven stress propels a crack to penetrate through the solid electrolyte, creating vacancies for dendrite growth, leading to the short circuit of the battery. Thus, high lithiation/charging rate and low conductivity of electrolytes can accelerate the electrochemical failure of the battery. It is further discovered that Young's modulus E LLZO of the electrolyte has competing contributions to the fracture and dendrite growth; specifically, when E LLZO = 40-100 GPa, the short circuit is triggered early. A larger toughness value hinders the crack propagation and mitigates the Li dendrite growth. The developed multiphysics model provides an in-depth understanding of the coupling of crack propagation and dendrite growth within ASSBs and an insightful mechanistic design guidance map for robust and safe ASSB cells.

25 ENERGY STORAGE↗
DOE OSTI2024

Mitigating Voltage Instability in the Saudi Grid for a Decarbonized, Fully Solar Power System

Lately, solar photovoltaic (PV) has received significant interest due to its economic and environmental benefits. As the integration of renewable energy sources (RES) increases into existing power grids, challenges such as the decrease in short circuit ratio (SCR) are introduced. Here, this paper investigates a case study of the Saudi power grid, examining the voltage stability as the grid transitions from traditional power generation to 100% penetration of solar PV gradually. Moreover, the paper explores the relationship between the increase in solar penetration and the potential effects on the short circuit MVA (SCMVA), which could significantly impact the overall SCR of the system. To meet the North American Electric Reliability Corporation (NERC) recommendation of maintaining SCR at a particular level, synchronous condensers (SC)s were integrated into the grid. The effectiveness of utilizing SCs to maintain the system voltage at optimal levels in a fully solar grid is also considered. In addition, this paper covers the weak grid analysis via utilizing the Newton-Raphson load flow method, along with PV and QV curve analyses. The purpose behind that is to determine weak bus locations in need of voltage improvements, and to meet the amount of reactive power to be injected. Finally, the amount of power being delivered by SCs will be added progressively in three scenarios to show the enhancements on SCR more precisely.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1990

Recent results from the InP homojunction cell module on the LIPS III spacecraft

The flight performance of the NASA Lewis Research Center's indium phosphide homojunction cell module on the LIPs III spacecraft is presented. Four n+-p diffused junction cells, an early product of an InP development program, were flown. The voltage range of the data prohibits determination of the open-circuit voltage or the maximum power point. However, analysis of the 32 months of short-circuit current data reveals a slight increase, not the 4 percent decrease expected from radiation tolerance studies. This increase may be due to continual cleaning of possible prelaunch dust contamination or changes in data acquisition system calibration. For all cells, the average short-circuit current remains below prelaunch values.

Brinker, David J.↗
NASA NTRS1984

Surface and allied studies in silicon solar cells

Significant improvements were made in the short-circuit current-decay method of measuring the recombination lifetime tau and the back surface recombination velocity S of the quasineutral base of silicon solar cells. The improvements include a circuit implementation that increases the speed of switching from the forward-voltage to the short-circuit conditions. They also include a supplementation of this method by some newly developed techniques employing small-signal admittance as a function of frequency omega. This supplementation is highly effective for determining tau for cases in which the diffusion length L greatly exceeds the base thickness W. Representative results on different solar cells are reported. Some advances made in the understanding of passivation provided by the polysilicon/silicon heterojunction are outlined. Recent measurements demonstrate that S 10,000 cm/s derive from this method of passivation.

Lindholm, F. A.↗