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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Task 12 PV Sustainability - Human Health Risk Assessment Methods for PV, Part 3: Module Disposal Risks

End-of-life management is important for addressing large future photovoltaic (PV) waste volumes and conserving raw materials for use in new PV modules. In regions without regulatory mandates for PV recycling, end-of-life PV modules can be disposed in accordance with general waste laws. Given the use of various metals as raw materials in semiconductor compounds and electrical contacts in commercial PV modules, some stakeholders have raised concerns regarding potential environmental impacts if PV modules are subject to improper disposal instead of being recycled or disposed in sanitary landfills, as is required in most world regions. To evaluate these concerns, screening-level risk assessment methods are developed herein that evaluate potential human health risks from groundwater and surface (air, soil, surface water) exposure pathways. The methods estimate potential impacts from disposal of end-of-life (EOL) PV modules in non-sanitary landfills under the following worst-case conditions: no leachate collection or groundwater monitoring, no liner for preventing leachate migration, uncovered waste, and lack of stormwater management. Examining worst-case conditions allows the exploration of maximum potential risk to attempt to ensure disposal does not increase health risk above regulatory thresholds. Specifically, this report presents an analysis of potential human health risks associated with non-sanitary landfill disposal for three PV technologies, focusing on release of the highest-prioritized chemical element for each: lead (Pb) in crystalline-silicon (c-Si) PV modules, cadmium (Cd) in thin film cadmium telluride (CdTe) PV modules, and selenium (Se) in thin film copper indium selenide (CIS) PV modules. The prioritization of these chemical elements for analysis is based on stakeholder interest. Because the methodology is chemical-specific, the risk assessment results for these chemicals cannot be directly generalized to other chemicals, although the risk assessment methodology can be applied to other chemicals. If the chemicals chosen are indeed the ones presenting greatest risk, then the results herein should represent the upper bound of health risk from exposure to a single constituent.

14 SOLAR ENERGY↗
DOE OSTI2025

Effect of Surface Passivation of CZTS Semiconductor Detector on Leakage Current

Cadmium Zinc Telluride Selenide (CdZnTeSe or CZTS)has shown high crystal quality for room-temperature gamma ray and X-ray detection applications compared to Cadmium Zinc Telluride (CdZnTe or CZT) [1,2]. Current applications of CZT include medical imaging, homeland security, and X-ray and gamma ray astronomy [3]. CZST has similar potential applications

Kangethe, Anthony [Morgan State Univ., Baltimore, ↗
DOE OSTI2025

Detector Performance on Surface Passivation and its Long-Term Stability

Surface passivation is an ideal technique to prepare the surfaces of fabrication Cadmium Zinc Telluride (CZT) and related semiconductor devices such as Cadmium Zinc Tellurium Selenide (CZTS). Surface passivation techniques reduce the effects of aging in the detector [1]. Surface performance effects on material performance can result in fluctuations in energy resolution over time (such as periods of a year or more). The long-term stability of surface passivation with Potassium Hydroxide (KOH) was observed with measurement of 1) current (nano Amp) vs voltage (V) and 2) spectral response and energy resolution throughout the years. Three CZTS detector samples of M2, M3, and M4 were examined using a photomultiplier tube and voltage amplifier. The Bridgman technique is used to grow the CZTS used in this study.

Johnson, Kirsten [Morgan State Univ., Baltimore, M↗
DOE OSTI2022

Crystal Growth and Electronic Properties of LaSbSe

The ZrSiS-type materials have gained intensive attentions. The magnetic version of the ZrSiS-type materials, LnSbTe (Ln = Lanthanide), offers great opportunities to explore new quantum states owing to the interplay between magnetism and electronic band topology. Here, we report the growth and characterization of the non-magnetic LaSbSe of this material family. We found the metallic transport, low magnetoresistance and non-compensated charge carriers with relatively low carrier density in LaSbSe. The specific heat measurement has revealed distinct Sommerfeld coefficient and Debye temperature in comparison to LaSbTe. Such addition of a new LnSbSe selenide compound could provide the alternative material choices in addition to LnSbTe telluride materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Advances in CdZnTeSe for Radiation Detector Applications

Detection of X- and gamma-rays is essential to a wide range of applications from medical imaging to high energy physics, astronomy, and homeland security. Cadmium zinc telluride (CZT) is the most widely used material for room-temperature detector applications and has been fulfilling the requirements for growing detection demands over the last three decades. However, CZT still suffers from the presence of a high density of performance-limiting defects, such as sub-grain boundary networks and Te inclusions. Cadmium zinc telluride selenide (CZTS) is an emerging material with compelling properties that mitigate some of the long-standing issues seen in CZT. This new quaternary is free from sub-grain boundary networks and possesses very few Te inclusions. In addition, the material offers a high degree of compositional homogeneity. The advancement of CZTS has accelerated through investigations of the material properties and virtual Frisch-grid (VFG) detector performance. The excellent material quality with highly reduced performance-limiting defects elevates the importance of CZTS as a potential replacement to CZT at a substantially lower cost.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Study of CdZnTeSe Gamma-Ray Detector under Various Bias Voltages

Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of -20 V to -200 V and amplifier shaping time of 2, 3 and 6 μs. The peak position of the 59.6-keV gamma line of 241 Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at -160 V bias voltage and 3-μs shaping time. The energy resolution was relatively stable in the -120 V to -200 V range for a 6-μs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 10 10 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241 Am.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1965

Photoelectric sensor output controlled by eyeball movements

The difference between the infrared absorption of the iris and infrared reflectivity of the eyeball controls the operation of a device consisting of an infrared source and amplifier, a cadmium selenide infrared sensor, and an infrared filter.

Source record↗
NASA NTRS1968

Guidance and control research

Guidance and control research - Josephson junction memory elements, frequency response of thin film thermal detectors, gallium selenide barrier gate, and photoconductor metal contacts

Source record↗
NASA NTRS1972

Time-of-flight mobility and trapping results for ZnSe.

Results of measurements of time-of-flight mobility and trapping for zinc selenide. The data were obtained at room temperature for electric fields in the range from 30,000 to 800,000 V/cm. A relatively constant hole mobility (about 50 sq cm/V sec) was found for the entire range of investigated fields. The electron mobility was approximately constant (about 400 sq cm/V sec) up to approximately equal to 300,000 V/cm, above which the drift velocity remained constant. No obvious negative differential mobility was observed, even though the Gunn effect has been reported for the field range investigated. Trapping and detrapping times in the vicinity of 1 nsec are reported for both holes and electrons. The field dependence of the electron-trapping times is unusual and remains unexplained.

Heaton, J. L., III↗
NASA NTRS1974

Hall effect magnetometer

A magnetometer which uses a single crystal of bismuth selenide is described. The rhombohedral crystal structure of the sensing element is analyzed. The method of construction of the magnetometer is discussed. It is stated that the sensing crystal has a positive or negative Hall coefficient and a carrier concentration of about 10 to the 18th power to 10 to the 20th power per cubic centimeter.

Woollam, J. A.↗