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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Segregation of Impurities in Directionally Solidified Silicon

Hall measurements and four-point probe resistivity measurements are used to determine the concentration profile of boron and iron in doped semi-conductor silicon ingots grown by the Bridgman technique. The concentration profiles are fitted to the normal segregation equation and the effective segregation coefficient, K sub eff, is calculated. The average value of K sub eff, is 0.803 for boron. For iron, K sub eff, is concentration dependent and is in the range 0.00008 to 0.00012.

Ravishankar, P. S.↗
NASA NTRS1982

Natural convection in melt crystal growth - The influence of flow pattern on solute segregation

The results of two lines of research aimed at calculating the structure of the flows driven by buoyancy in small-scale crystal growth systems and at understanding the coupling between these flows, the shape of the solidification interface, and dopant segregation in the crystal are reviewed. First, finite-element methods are combined with computer-aided methods for detecting multiple steady solutions to analyze the structure of the buoyancy-driven axisymmetric flows in a vertical cylinder heated from below. This system exhibits onset of convection, multiple steady flows, and loss of the primary stable flow beyond a critical value of the Rayleigh number. Second, results are presented for calculations of convection, melt/solid interface shape, and dopant segregation within a vertical ampoule with thermal boundary conditions that represent a prototype of the vertical Bridgman growth system.

Brown, R. A.↗
NASA NTRS1985

Influence of dendrite network defects on channel segregate growth

The solidifying ingot interdendritic flow analysis in which channel segregates are assumed to be produced by interdendritic fluid flow dissolving channels in the primary dendrite network is presently refined by examining the flow through a dendrite network possessing a small defect. Attention is given to the section of the mushy zone in a solidifying casting. Since defects such as that presently treated are unavoidable in a real casting, a more reliable indication may be furnished of the occurrence of channel segregates.

Simpson, M.↗
NASA NTRS1985

Heat Flow and Segregation in Directional Solidification

This research is composed of three major components: (1) development of interface morphology control for automated Bridgman growth of semiconductor systems; (2) comparative analysis of segregation during crystal growth in a reduced gravity environment and in the presence of magnetic fields; and (3) consequences of seeding by meltback in Bridgman growth under reduced gravity conditions. In attempts to optimize furnace design for crystal growth in a reduced gravity environment, an analytical approach to heat transfer was developed. It was thus found that charge confining crucibles diminish the ability to control the growth interface morphology through its position within the gradient zone. A heat pipe hot zone system for Bridgman growth, in reduced gravity environment, of crystal with diameters up to 16 mm was developed. For growth of Ga-doped germanium in the multipurpose (ASTP) furnace, it was found that the application of transverse magnetic fields (up to 36 kg) does not substantially increase the effective distribution coefficient; i.e., diffusion-controlled segregation observed in reduced gravity environment cannot be reached nor approached by magnetic field induced melt stabilization.

Witt, A. F.↗
NASA NTRS1986

A graphical treatment of combined evaporation and segregation contributions to impurity profiles for zone-refining in vacuum

Impurity concentration profiles have been calculated for zone-refining when both segregation and evaporation of impurities are operative, assuming a uniform initial concentration. Graphic profiles are presented for selected values of effective segregation coefficient k, effective evaporation coefficient g, and number of zone passes n. Some examples of impurity profiles for float-zoned silicon are also presented.

Ciszek, T. F.↗
NASA NTRS1987

Convection and segregation in directional solidification of dilute and non-dilute binary alloys - Effects of ampoule and furnace design

A Petrov-Galerkin/finite-element method is used to analyze the effect of furnace configuration and ampoule design on the temperature field, the convection in the melt, the shape of the melt-solid interface, and the segregation of solute in the crystal, in the directional solidification of several dilute and nondilute binary semiconductor alloys. The vertical Bridgman-Stockbarger system leads to a two-cell flow structure, and the constant gradient furnace has only a single cell near the interface. Radial temperature gradients interact with the solute field to cause the previously predicted sideways diffusive instability, and addition of a solute that is less dense than the bulk melt and that is incorporated upon solidification decreases the intensity of the flow near the interface by increasing the melt density there. The present results have application to understanding of the effects on solute segregation of microgavity solidification and of applied magnetic fields.

Adornato, Peter M.↗
NASA NTRS1987

Thermal segregation of water ice on the Galilean satellites

The susceptibility of dirty ice surfaces to a water cold-trapping process in the Galilean satellites' local bright patches, in association with preferential removal from dark areas, is inferred on the basis of a consideration of the thermal sublimation of ice. A decade time-scale segregation of the surface into bright icy regions and dark ice-free lag deposit regions would be the main consequence of such a process. While ion sputtering and micrometeorite bombardment do not appear to be of sufficient magnitude for a prevention of the process on Callisto and Ganymede, sputtering on the trailing side of Europa may be able to prevent segregation.

Spencer, John R.↗
NASA NTRS1988

Effect of vertical magnetic field on convection and segregation in vertical Bridgman crystal growth

A previous finite-element analysis of vertical Bridgman growth for dilute and nondilute alloys is extended to include the effect of a vertically-aligned magnetic field in the limit of zero magnetic Reynolds number. Calculations are presented for growth of a dilute gallium-germanium alloy in a vertically stabilized Bridgman-Stockbarger system and in a furnace with a uniform temperature gradient imposed along the ampoule. Steady cellular convection driven by radial temperature gradients causes good axial and radial mixing in both systems without a magnetic field. A weak magnetic field decreases the intensity of convection and the effectiveness of solute mixing. The radial nonuniformity is greatest for an intermediate field strength. Stronger fields suppress flow recirculation completely, and lead to uniform solute segregation across the crystal and to diffusion-controlled axial segregation.

Kim, Do Hyun↗
NASA NTRS1986

Heat flow control and segregation in directional solidification: Development of an experimental and theoretical basis for Bridgman-type growth experiments in a microgravity environment

Within the framework of the proposed research, emphasis was placed on application of magnetic fields to semiconductor growth systems. It was found that magnetic fields up to 3 kGauss do not affect the growth behavior nor the macro-segregation behavior in the system Ge(Ga). Applied fields are found to significantlty alter the radial dopant distribution, which is attributed to alterations in the spatial orientation of convective cells. Increasing the magnetic field to 30 kGauss is found to have a fundamental effect on dopant segregation. Emphasis is also placed on the potential of KC-135 flights for preliminary studies on the effects of reduced gravity environments on the wetting behavior of semiconductor systems in growth configuration. The limited number of experiments conducted does not allow any conclusions on the merits of KC-135 flights for semiconductor processing research.

Witt, A. F.↗
NASA NTRS1988

The effect of diffusive segregation on the fracture of hydrogen charged nickel

Hydrogen charged nickel was deformed in tension at a test temperature of 208 K to study the diffusive segregation of hydrogen during straining and the dependence of embrittlement on grain boundary hydrogen concentration and deformation rate. Tests were performed on samples in the as-quenched condition at various strain rates. An increase in the degree of embrittlement at slow strain rates can be attributed to diffusive segregation of hydrogen to grain boundaries during the test period. The embrittlement of samples with equal grain boundary hydrogen concentration was found to be relatively insensitive to strain rate, bulk hydrogen concentration and the total time at the test temperature.

Lassila, D. H.↗
NASA NTRS1989

Models for convection and segregation in the growth of HgCdTe by the vertical Bridgman method

Transport processes in the vertical Bridgman growth of Hg(1-x)Cd(x)Te were investigated by numerical analysis of an idealized quasi-steady-state model of this system. The analysis was specifically directed at an explanation for the radial and axial segregation data obtained by Szofran and Lehoczky (1984) and Szofran et al. (1984) on this system, who reported, respectively, on the observations of diffusion-controlled axial segregation and on the presence of large compositional nonuniformities of CdTe across the radius of the crystal. It is shown that the data sets of these groups can be explained by the results of a detailed analysis of heat transfer, convection, and species transport which account for thermosolutal convection in the melt and for heat transfer mechanisms that dominate the HgCdTe alloy. Predictions from this analysis is applicable to the growth of other materials, because they suggest conditions for the growth of radially uniform crystals with nearly constant axial composition profiles.

Kim, Do Hyun↗
NASA NTRS1989

Correlations and alloy properties - Growth, vacancies, surface segregation

The aspects of bonding interaction mechanisms which have an impact on the correlation state of alloy semiconductors are demonstrated. The effect of the correlation state on liquidus and solidus curves, on surface segregation, and on vacancy densities is deduced. Vacancy energies for several alloys are presented, and tentative conclusions are drawn about their effects on diffusion, doping, and ion beam processing. Features of the theory of surface segregation in semiconductor alloys are then presented.

Sher, A.↗
NASA NTRS1992

Analytical estimates of radial segregation in Bridgman growth from low-level steady and periodic accelerations

Approximate analytical solutions are developed that are mathematically tractable but provide the elements of CFD models for estimating convective flows subjected to low-level accelerations. The estimates are applicable to dilute systems that have horizontal temperature gradients in the vertical Bridgman configuration. The Navier-Stokes momentum equation is solved in 1D and subsequently in 2D by the first-order perturbation method. The analysis used is the case of plane-front solidification of a dilute system in the vertical thermally stable configuration. The model is found to predict the degree of radial segregation within a factor of two for a range of material and processing parameters. The method provides detailed information on the effects of processing on solute distribution in the grown crystal which are of interest in the orbital experiments emphasizing the control of radial segregation.

Naumann, Robert J.↗
NASA NTRS1993

Heat of segregation of single substitutional impurities

The method of Bozzolo, Ferrante and Smith (BFS) is applied for the calculation of the heat of segregation of single substitutional impurities in fcc metals. A simple equation for predicting the heat of segregation is derived for the rigid case (no atomic relaxations). The results of including atomic relaxation using a Monte Carlo method are also presented and the results compared with a number of experimental and theoretical results.

Bozzolo, Guillermo↗
NASA NTRS1994

Effects of Hydrogen Annealing, Sulfur Segregation and Diffusion on the Cyclic Oxidation Resistance of Superalloys: a Review

This review is based on the phenomenon of improved oxide scale adhesion for desulfurized superalloys. The proposed adhesion mechanism involves sulfur interfacial segregation and scale-metal bond weakening. Sulfur surface segregation on superalloys is examined as a function of temperature and sulfur content and related to classical behavior predicted by the McLean isotherm. Effective desulfurization to less than 1 ppmw can be accomplished by hydrogen annealing and is governed by sulfur diffusion kinetics in nickel. Hydrogen annealing results in excellent cyclic oxidation resistance for a number of advanced superalloys. The concept of a critical sulfur content is discussed in terms of practical annealing conditions and section thicknesses.

Smialek, J. L.↗
NASA NTRS1994

The study of dopant segregation behavior during the growth of GaAs in microgravity

An investigation into the segregation behavior of selenium doped gallium arsenide during directional solidification in the microgravity environment was conducted using the Crystal Growth Furnace (CGF) aboard the first United States Microgravity Laboratory (USML-1). The two crystals grown were 1.5 cm in diameter and 16.5 cm in length with an initial melt length of 14 cm. Two translation periods were executed, the first at 2.5 microns/s and after a specified time, which was different between the two experiments, the translation rate was doubled to 5.0 microns/s. The translation was then stopped and the remaining sample melt was solidified using a gradient freeze technique in the first sample and a rapid solidification in the second experiment. Measurement of the selenium dopant distribution, using quantitative infrared transmission imaging, indicates that the first sample initially achieved diffusion controlled growth as desired. However, after about 1 cm of growth, the segregation behavior was driven from a diffusion controlled growth regime to a complete mixing regime. Measurements in the second flight sample indicated that the growth was always in a complete mixing regime. In both experiments, voids in the center line of the crystal, indicative of bubble entrapment, were found to correlate with the position in the crystal when the translation rates were doubled.

Matthiesen, David H.↗
NASA NTRS1994

Effects of hydrogen annealing, sulfur segregation and diffusion on the cyclic oxidation resistance of superalloys: A review

This review is based on the phenomenon of improved oxide scale adhesion for desulfurized superalloys. The proposed adhesion mechanism involves sulfur interfacial segregation and scale-metal bond weakening. Sulfur surface segregation on superalloys is examined as a function of temperature and sulfur content, and is related to the classical behavior predicted by the McLean isotherm. Effective desulfurization to less than 1 ppmw can be accomplished by hydrogen annealing and is described by sulfur diffusion kinetics in nickel. Hydrogen annealing results in excellent cyclic oxidation resistance for a number of advanced superalloys. The concept of a critical sulfur content is discussed in terms of practical annealing conditions and section thicknesses.

Smialek, J. L.↗