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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se 2 Solar Cells Fabricated using Different Methods

Voltage losses reduce the photovoltaic conversion efficiency of thin‐film solar cells and are a primary efficiency limitation in Cu(In,Ga)Se 2 . Herein, voltage loss analysis of Cu(In,Ga)Se 2 solar cells fabricated at three institutions with variation in process, bandgap, absorber structure, postdeposition treatment (PDT), and efficiency is presented. Nonradiative voltage losses due to Shockley–Read–Hall charge carrier recombination dominate and constitute >75% of the total compared to <25% from radiative voltage losses. The radiative voltage loss results from nonideal absorption and carriers in band tails that stem from local composition‐driven potential fluctuations. It is shown that significant bulk lifetime improvements are achieved for all alkali PDT processed absorbers, chiefly associated with reductions in nonradiative recombination. Primary voltage loss contributions (radiative and nonradiative) change little across fabrication processes, but variation in submechanisms (bulk lifetime, net acceptor concentration, and interface recombination) differentiate nonradiative loss pathways in this series of solar cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Dynamical Bond Formation in KNi 2 Se 2

Emphanisis, or the appearance out of nothing, has been used to describe the phenomena of spontaneous atom off-centering and dipole formation at elevated temperatures in lead chalcogenides. Here, we provide spectroscopic evidence of spontaneous formation of metal-metal bonds above T~50 K in the layered metal KNi 2 Se 2 . These bonds form zig-zag chains that lower the local symmetry from tetragonal to monoclinic. Energy-resolved pair distribution function measurements exclude a pure phonon origin of our observations, and instead imply the existence of extra, slowly fluctuating, Ni-Ni bonds above T=50 K. Density functional theory calculations support this lower symmetry configuration as an instability of tetragonal KNi 2 Se 2 . We thus demonstrate that the phenomena of emphansis is not limited to local electric dipole formation, but can also be driven by the formation of metal-metal bonds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Ag-doped As–S–Se chalcogenide glasses: a correlative study of structural and dielectrical properties

This work is focused on investigating the effect of Ag doping on the dielectric and structural properties of the As–S–Se glass system and their suitability for potential applications in optoelectronics, such as electronic and switching components. A series of glasses from the system Agx(As40S30Se30)100-x (x = 5 at.% Ag) were prepared with melt-quenching technique. Morphological and compositional analysis was performed by scanning electron microscopy and energy-dispersive X-ray spectroscopy. Raman spectroscopy measurements have shown structural modifications of the glass network upon Ag doping, with creation of new Ag–(S,Se)–As structures, resulting in increased number of defect states. Variations in dielectric permittivity (e') and dielectric loss (e") were investigated in a wide frequency and temperature range, and explained by dominant dipolar and electronic polarization, as well as correlated with the observed structural changes. Improvement in dielectric properties is observed upon doping with Ag. Furthermore, the low dielectric tangent loss at high frequencies for all glassy samples points to a beneficial ability of the material to absorb energy of the external electric field. Good thermal stability of these glasses is confirmed by the calculated temperature coefficient of the dielectric permittivity. Density of localized states in all glasses was determined from AC conductivity and the dielectric tangent loss using a correlated barrier hopping model, and found to increase with Ag concentration. The overall results suggest that Ag doping enhances the electrical and optical quality of this type of glasses, making them suitable as nonlinear optical materials and their applications in devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-precision measurements of half-lives for 69 Ge, 73 Se, 83 Sr, 85 mSr, and 63 Zn radionuclides relevant to the astrophysical p-process via photoactivation at the Madison Accelerator Laboratory

The ground state half-lives of 69 Ge, 73 Se, 83 Sr, 63 Zn, and the half-life of the 1/2 - isomer in 85 Sr have been measured with high precision using the photoactivation technique at an unconventional bremsstrahlung facility that features a repurposed medical electron linear accelerator. The γ -ray activity was counted over about 6 half-lives with a high-purity germanium detector, enclosed into an ultra low-background lead shield. The measured half-lives are: T 1/2 ( 69 Ge) = 38.82 ± 0.07 (stat) ± 0.06 (sys) h; T 1/2 ( 73 Se) = 7.18 ± 0.02 (stat) ± 0.004 (sys) h; T 1/2 ( 83 Sr) = 31.87 ± 1.16 (stat) ± 0.42 (sys) h; T 1/2 ( 85m Sr) = 68.24 ± 0.84 (stat) ± 0.11 (sys) min; T 1/2 ( 63 Zn) = 38.71 ± 0.25 (stat) ± 0.10 (sys) min. These high-precision half-life measurements will contribute to a more accurate determination of corresponding ground-state photoneutron reaction rates, which are part of a broader effort of constraining statistical nuclear models needed to calculate stellar nuclear reaction rates relevant for the astrophysical p -process nucleosynthesis.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Uptake behavior of 73 As, 75 Se, 197m Hg, 212 Pb and 210 Po on Eichrom pre-filter resin from HCl and HNO 3

We report the extraction of 73 As, 75 Se, 197 mHg, 212 Pb and 210 Po on Eichrom pre-filter resin was studied in HCl and HNO 3 with batch uptake, kinetic and column experiments. There was significant extraction of mercury in HNO 3 and HCl, and polonium and selenium in HCl. The kinetics are sufficient to allow for retention on pre-filter columns, and separations of 73 As from 75 Se and 197 mHg, and 212 Pb from 210 Po are demonstrated. This retention is important for the development of chemical separations as pre-filter resin is commonly used alongside extraction chromatography resins but its potential for uptake of metal ions is not well characterized.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2020

High yield production of ultrathin fibroid semiconducting nanowire of Ta 2 Pd 3 Se 8

Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with thickness approaching molecular or atomic level still remains stagnant. Here, we demonstrate the high yield production of a 1D vdW material, semiconducting Ta 2 Pd 3 Se 8 nanowires, by means of liquid-phase exfoliation. The thinnest nanowire we have readily achieved is around 1 nm, corresponding to a bundle of one or two molecular ribbons. Transmission electron microscopy (TEM) and transport measurements reveal the as-fabricated Ta 2 Pd 3 Se 8 nanowires exhibit unexpected high crystallinity and chemical stability. Our low-frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings. The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors.

1D semiconductor↗
DOE OSTI2026

Complex spin structure in co-trimer-chain Li 2 Co 3 Se 4 O 12

Complex magnetic materials are extremely attractive for revealing unconventional spin states and novel magnetic excitations. Here, we report the structural, thermodynamic, and magnetic properties of a novel magnetic material Li 2 Co 3 Se 4 O 12 based on x-ray and neutron diffraction, specific heat, magnetization, and x-ray photoelectron spectroscopy measurements. X-ray and neutron diffraction refinements reveal two Co sites Co (1) and Co (2) even though both are in the octahedral environment. While they are not connected along the b and c directions, these octahedra are edge-shared forming the Co (2) – Co (1) – Co (2) trimer chain along the a direction. The magnetic susceptibility exhibits the Curie-Weiss (CW) temperature dependence at high temperatures (above ∼50 K) with the negative CW temperature, a dip centered at T ⁎ ∼ 8.0 K, and an antiferromagnetic transition at T N = 3.3 K. The specific heat confirms that there is a phase transition at T N and a hump at T ⁎ . The long-range magnetic transition at T N implies that, in addition to the intra-chain interaction, there is strong inter-chain interaction, which is likely due to polarized SeO 3 bridging between chains. Single crystal neutron diffraction refinement reveals a complex magnetic structure with the angle between Co (1) and Co (2) moments ∼105°. Within the Co (2) – Co (1) – Co (2) trimer, two Co (2) moments are parallelly aligned. Surprisingly, the Co (1) moment (1.92μB) is only half of the Co (2) moment (3.96μB). There is likely the spin-state change for Co (1) from the high-spin state at T > T ⁎ to the low-spin state at T < T ⁎ , causing a dip in the magnetic susceptibility and a hump in the specific heat. When the magnetic field is applied, multiple metamagnetic transitions are found in all directions, implying field-driven magnetic excitations. Our results demonstrate rich magnetic properties of Li 2 Co 3 Se 4 O 12 that are sensitive to the external stimuli such as the magnetic field.

Antiferromagnetism↗
DOE OSTI2022

Bandgap engineering of Cd 1 - x Zn x Te 1 - y Se y ( 0 < x < 0 . 27 , 0 < y < 0 . 026 )

CdZnTe (CZT) detectors with more than 10% zinc content did not show a remarkable improvement in the detector performance due to the additional defects introduced by the higher zinc content. However, recent research showed that the formation of defects was suppressed effectively by adding a small amount of selenium (2%) in CZT. On this basis, we attempted to enhance the detector performance through bandgap engineering by increasing the zinc content up to 25 %, while adding 2 % of selenium. Multiple CdZnTeSe (CZTS) ingots with Zn = 10, 12.5, 15, 20 and 25%, while fixing the Se composition at 2%, were grown by the Bridgman method. The bandgap of CZTS for the different Zn and Se contents was analyzed and then equations for predicting the bandgap for other alloy compositions were introduced. Furthermore, the crystallinity of CZTS was evaluated by photoluminescence measurements. The pulse height spectra for Am-241 and Co-57 sources were used to evaluate the detector performance for the CZTS samples.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

First measurement in the Gamow window of a reaction for the γ-process in inverse kinematics: 76 Se(α,γ) 80 Kr

The p-nuclei are the few stable nuclei heavier than iron on the neutron-deficient side of the valley of stability that cannot be produced through astrophysical neutron-capture reactions. The limited experimental data on reactions through which the p-nuclei might be produced leaves the origin of their production largely unknown. This work presents the first cross section measurements of the 76 Se(α,γ) 80 Kr reaction. The rate of the time reversed reaction, 80 Kr(γ,α) 76 Se, is one of the most uncertain of possible reactions which can occur at the 80 Kr branching point on the ,-process photo-disintegration pathway. The reaction flow through 80 Kr will directly affect the final abundance of the p nuclide 78 Kr. Experimental cross sections at two astrophysically relevant energies are reported and compared to cross sections calculated using Hauser-Feshbach codes TALYS, NON-SMOKER, and SMARAGD. The success of these first (α,γ) cross section measurements performed in inverse kinematics in the energy region of the γ-process opens the door for future studies of reactions on radioactive γ-process nuclides.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Structural and thermal properties and the origin of the ultralow thermal conductivity in the defect stannite CuIn 2 Se 4

Phase-pure CuIn 2 Se 4 , a ternary metal chalcogenide that forms in a disordered stannite crystal structure, was synthesized to investigate the structure thermal property relationships as well as reveal the origin of the ultralow thermal conductivity this material possesses over a large temperature range. Modeling of the temperature-dependent heat capacity and thermal conductivity revealed distinctive thermal properties and large lattice anharmonicity. Electron localization function calculations highlight the asymmetric bonding inherent to CuIn 2 Se 4 , which together with lattice anharmonicity directly impacts the thermal properties. Our findings reveal the specific atomic arrangement and bonding governing the thermal properties of this ternary metal chalcogenide. Our findings underscore the specific atomic arrangement and bonding governing the thermal properties in this ternary chalcogenide. This study advances the fundamental understanding of stannites, and our findings can be applied to these and other multinary metal chalcogenides of interest for applications where low thermal conductivity is desirable.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effects of Absorber Near-Interface Compensation on Cd(Se,Te) Solar Cell Performance

Arsenic (As) has been shown to be an effective p-type dopant for CdTe, although high performance in As-doped devices remains difficult to achieve. Arsenic is prone to self-compensation in CdTe, as evidenced by the accumulation of dopant atoms in CdTe/Cd(Se,Te) near the interface with MgxZn1-xO (MZO). In this study, we use SCAPS 1D modeling software to investigate the effect of near-interface compensation, helping elucidate loss pathways in present-day As-doped devices and informing future growth directions. We consider three possible results of As accumulation: shallow donors, deep recombination centers, and a thin layer of excess acceptor accumulation. The reduction in near-interface carrier concentration caused by shallow donors is shown to improve open-circuit voltages (VOC), whereas deep levels are detrimental to all performance parameters. The thin charge layer affects capacitance-voltage (CV) measurements by reducing the depletion width while maintaining the same carrier concentration, replicating CV behavior that has been observed in actual devices. These results illustrate the importance of monitoring dopant accumulation within 100 nm of the interface, and suggest that reducing or eliminating the As concentration in this region would be beneficial. An undoped Cd(Se,Te) layer at the interface is suggested as a possible device structure to boost performance.

absorber↗
DOE OSTI2020

Superstructures and Superconductivity Linked with Pd Intercalation in Nb 2 Pd x Se 5

Single crystals of Nb 2 Pd x Se 5 have been grown covering a broad range of palladium stoichiometries, from x = 0.68 to x = 0.95 (Pd2 occupancies 0.36 and 0.90 respectively). Miscibility gaps in the Pd stoichiometry range are related to superstructures resulting from staged filling and ordering of the partially filled Pd atom site (Pd2, Wyckoff site 2a). For Pd2 near 1/2 occupancy, a superstructure based on an incommensurate occupation wave with modulation along the monoclinic b-axis is identified. Here, a superconducting dome is found for Pd2 occupancies above 0.58, with maximum Tc for Pd2 occupancy of approximately 2/3. DFT calculations for the fully and 1/2 occupied Pd2 site show that Nb 2 Pd x Se 5 can be considered an intercalation compound for Pd2 occupancy above the minimum required for structural stability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

ACuZrQ 3 (A = Rb, Cs; Q = S, Se, Te): Direct Bandgap Semiconductors and Metals with Ultralow Thermal Conductivity

ACuZrQ 3 (A = Rb, Cs; Q = S, Se, Te) were synthesized as black platelet crystals. RbCuZrS 3 , RbCuZrSe 3 , and CsCuZrS 3 crystallize in the KCuZrSe 3 structure type with space group Cmcm, and RbCuZrTe 3 and CsCuZrTe 3 crystallize in the lower symmetry space group Pnma. The tellurides exhibit a second order Jahn-Teller distortion with off-centering of Zr in its octahedral environment. The magnitude of the distortion is larger in RbCuZrTe 3 than in CsCuZrTe 3 . The structures of beta-CsCuS 4 and Rb 2 Cu 5 Te 5 were also determined. CsCuZrS 3 melts at 910 C-circle and exhibits partial decomposition upon heating at 275 C-circle, while CsCuZrTe 3 melts incongruently. Our DFT calculations of RbCuZrQ 3 (Q = S, Se) and CsCuZrS 3 indicate direct gap semiconductors in agreement with experiments. ACuZrTe 3 (A = Rb, Cs) were calculated to be metals which was confirmed for RbCuZrTe 3 with variable temperature conductivity measurements and consistent with heat capacity measurements. Spectroscopic measurements found a bandgap and work function of 1.44(5) eV and 4.89(5) eV for RbCuZrS 3 and 0.95(5) eV and 4.67(5) eV for RbCuZrSe 3 , respectively. Finally, RbCuZrTe 3 did not exhibit an optical bandgap and has a work function of 4.64(5) eV. RbCuZrTe 3 exhibits a low thermal conductivity under 0.5 W m -1 K -1 at room temperature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Insulator-to-Metal Transition under High Pressure in FeNb 3 Se 10

Nonmagnetic FeNb 3 Se 10 has been demonstrated to be an insulator at ambient pressure through both theoretical calculations and experimental measurements, and it does not host topological surface states. Here, we show that on the application of pressure, FeNb 3 Se 10 transitions to a metallic state at around 3.0 GPa. With a further increase in pressure, its resistivity becomes independent of both temperature and pressure. Its crystal structure is maintained to at least 4.4 GPa.

crystal structure↗
DOE OSTI2025

Polymorphic Control of CsGaE 2 (E = S, Se) Using Diorganyl Dichalcogenide Precursors

Diorganyl dichalcogenides (R–E–E–R; R = organyl, E = S, Se, Te) are widely employed for the polymorphic control of diamond-like crystal structures owing to their tunable C–E bond reactivity. In this work, we extend their application to non-close-packed alkali metal-based chalcogenides by demonstrating the selective synthesis of CsGaE 2 (E = S, Se) polymorphs. Weaker C–E bonds or higher temperatures promote the formation of the thermodynamically stable mC64 phases, while stronger C–E bonds or lower temperatures allow for the isolation of the metastable mC16 phases. Furthermore, heat-treatment studies reveal the pronounced metastability of CsGaSe 2 -mC16 particles and the irreversible phase transition of CsGaS 2 analogous to its bulk counterpart.

Cancer↗
DOE OSTI2021

Ultrafast Carrier–Lattice Interactions and Interlayer Modulations of Bi 2 Se 3 by X-ray Free-Electron Laser Diffraction

We report as a 3D topological insulator, bismuth selenide (Bi 2 Se 3 ) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. Understanding the coupling with its topological phase requires studying the interactions of carriers with the lattice on time scales down to the sub-picosecond regime. Here we investigate the ultrafast carrier-induced lattice contractions and interlayer modulations in Bi 2 Se 3 thin films by time-resolved diffraction using an X-ray free-electron laser. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory (DFT) and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Our theory suggests that band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insights into the topological phase control by light-induced structural change on ultrafast timescales.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Polytypic Zn–(In,Ga)–Se Nanocrystals with Tunable Emission

While the polymorphism of chalcopyrite semiconductors has been widely studied, the wurtzite analogues of defect-chalcopyrite II–III 2 –VI 4 compositions, such as Zn(In,Ga) 2 (S,Se) 4 , remain underexplored. Here, we report the synthesis of polytypic Zn–(In,Ga)–Se multipods via cation exchange using ZnSe as a template. With cubic cores and wurtzite arms elongated along the hexagonal c-axis, the multipods retain the structure and morphology of the ZnSe template. Optical characterization reveals composition-dependent absorption and photoluminescence, tunable from the visible to the near-infrared region, with spectral features distinct from those of previously reported defect-chalcopyrite structures. Temperature-dependent measurements demonstrate strong emission at cryogenic temperatures, which is quenched near room temperature due to thermally activated nonradiative processes. Here, we illustrate the use of ZnSe as a platform for cation exchange toward wurtzite multinary chalcogenides, unlocking access to novel structures with colorful optical properties.

cation exchange↗
DOE OSTI2025

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance

Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaO x in the contact stack has yielded improved device open-circuit voltages (V OC ) and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community. We demonstrate in this work that an underappreciated property of such spin-coated layers is the preferential deposition at grain boundaries, a process that isolates the grain boundaries during contact metallization. The effects of grain-boundary isolation are probed by varying the coverage of solution-processed AlGaO x “barrier” layers on the Cd(Se,Te) surface, quantified by scanning Auger microscopy. Examining coverage-dependent V OC and FF, it was observed that isolating the grain boundaries during metallization is sufficient to prevent damage to the absorber that occurs in devices lacking a barrier layer, while additional coverage contributes to the increased series resistance. Such an effect is agnostic to the material used as a barrier layer, as long as the material does not itself damage the absorber. Spin-coated SiO x was used in place of AlGaO x for an equally beneficial effect. This grain-boundary isolation phenomenon is also observed during Mo deposition and in absorbers that have been contacted with a nitrogen-doped ZnTe layer. The mechanisms by which metallization may degrade the absorber are discussed, as are contact design strategies leveraging barrier layers, which may lead to improved device efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗