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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin} degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I{sub dlin} anomalously increases while the V{sub th} is increasing with power law. The thin layer field pLDMOS exhibits more severe V{sub th} instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Parasitic conduction loss of lithium niobate on insulator platform

Thin-film lithium niobate on insulator (LNOI) has recently emerged as an exciting platform for nonlinear integrated photonic devices, drawing parallels with the impact of silicon on insulator (SOI) in the electronic device realm. While the influence of interfacial states of SOI on electronic device performance, particularly their contribution to parasitic radio frequency (RF) losses, is well-documented, this aspect remains relatively unexplored in LNOI, despite their shared silicon/oxide interface structure. Here, we investigate the RF loss arising from mobile charges at the silicon/oxide interface of the LNOI platform. We show that this parasitic conduction can be exacerbated, especially during plasma etching, and leads to substantial RF losses. Through strategic incorporation of a trap-rich poly-silicon layer at this interface, we effectively eliminate this parasitic conduction, resulting in the suppression of RF losses. This work establishes crucial guidelines for harnessing LNOI in applications such as high-frequency electro-mechanical devices, high-speed electro-optic modulators, and high-efficiency microwave-to-optics converters.

Physics↗
DOE OSTI2013

The SOAR Gravitational Arc Survey – I. Survey overview and photometric catalogues

We present the first results of the SOAR (Southern Astrophysical Research) Gravitational Arc Survey (SOGRAS). The survey imaged 47 clusters in two redshift intervals centered at $z=0.27$ and $z=0.55$, targeting the richest clusters in each interval. Images were obtained in the $g'$, $r'$ and $i'$ bands using the SOAR Optical Imager (SOI), with a median seeing of 0.83, 0.76 and 0.71 arcsec, respectively, in these filters. Most of the survey clusters are located within the Sloan Digital Sky Survey (SDSS) Stripe 82 region and all of them are in the SDSS footprint. Photometric calibration was therefore performed using SDSS stars located in our SOI fields. We reached for galaxies in all fields the detection limits of $g \sim 23.5$, $r \sim 23$ and $i \sim 22.5$ for a signal-to-noise ratio (S/N) = 3. As a by-product of the image processing, we generated a source catalogue with 19760 entries, the vast majority of which are galaxies, where we list their positions, magnitudes and shape parameters. We compared our galaxy shape measurements to those of local galaxies and concluded that they were not strongly affected by seeing. From the catalogue data, we are able to identify a red sequence of galaxies in most clusters in the lower $z$ range. We found 16 gravitational arc candidates around 8 clusters in our sample. They tend to be bluer than the central galaxies in the lensing cluster. A preliminary analysis indicates that $\sim 10%$ of the clusters have arcs around them, with a possible indication of a larger efficiency associated to the high-$z$ systems when compared to the low-$z$ ones. Deeper follow-up images with Gemini strengthen the case for the strong lensing nature of the candidates found in this survey.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device

Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Here employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we observe differences in the extracted values of the single-hole effective g factors of the constituent quantum dots of a GaAs/AlGaAs double quantum dot device at the level of ~ 5 %–10%. We examine the continuous change in the hole g factor with electrical detuning over a wide range of interdot tunnel couplings and for different out-of-plane magnetic fields. The observed tendency of the quantum dot effective g factors to steadily increase on decreasing the interdot coupling or on increasing the magnetic field is attributed to the impact on the SOI of changing the dot confinement potential and heavy-hole light-hole mixing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Coexisting charge and magnetic orders in the dimer-chain iridate Ba 5 AlIr 2 O 11

In this paper, we have synthesized and studied single-crystal Ba 5 AlIr 2 O 11 that features dimer chains of two inequivalent octahedra occupied by tetravalent Ir 4+ (5d 5 ) and pentavalent Ir 5+ (5d 4 ) ions, respectively. Ba 5 AlIr 2 O 11 is a Mott insulator that undergoes a subtle structural phase transition near T S =210K and a magnetic transition at T M =4.5K; the latter transition is surprisingly resistant to applied magnetic fields μ o H≤12T but more sensitive to modest applied pressure (dT M /dp ≈ +0.61K/GPa). All results indicate that the phase transition at T S signals an enhanced charge order that induces electrical dipoles and strong dielectric response near T S . It is clear that the strong covalency and spin-orbit interaction (SOI) suppress double exchange in Ir dimers and stabilize a novel magnetic state that is neither S=3/2 nor J=1/2, but rather lies in an “intermediate” regime between these two states. Finally, the novel behavior of Ba 5 AlIr 2 O 11 therefore provides unique insights into the physics of SOI along with strong covalency in competition with double-exchange interactions of comparable strength.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Decoupling of the antiferromagnetic and insulating states in Tb-doped Sr 2 IrO 4

Sr 2 IrO 4 is a spin-orbit coupled insulator with an antiferromagnetic (AFM) transition at T N = 240 K. We report results of a comprehensive study of single-crystal Sr 2 Ir 1-x Tb x O 4 (0≤x≤0.03). This study found that mere 3% (x=0.03) tetravalent Tb 4+ (4f 7 ) substituting for Ir 4+ (rather than Sr 2+ ) completely suppresses the long-range collinear AFM transition but retains the insulating state, leading to a phase diagram featuring a decoupling of magnetic interactions and charge gap. The insulating state at x = 0.03 is characterized by an unusually large specific heat at low temperatures and an incommensurate magnetic state having magnetic peaks at (0.95, 0, 0) and (0, 0.95, 0) in the neutron diffraction, suggesting a spiral or spin density wave order. It is apparent that Tb doping effectively changes the relative strength of the SOI and the tetragonal CEF and enhances the Hund’s rule coupling that competes with the SOI, and destabilizes the AFM state. However, the disappearance of the AFM accompanies no metallic state chiefly because an energy level mismatch for the Ir and Tb sites weakens charge carrier hopping and renders a persistent insulating state. Furthermore, this work highlights an unconventional correlation between the AFM and insulating states in which the magnetic transition plays no critical role in the formation of the charge gap in the iridate.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Landau-Zener-Stückelberg-Majorana Interferometry of a Single Hole

We perform Landau-Zener-Stückelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. Analogous to electron systems, at a magnetic field B = 0 and high modulation frequencies, we observe photon-assisted tunneling between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flip interdot tunneling channel, introducing a distinct interference pattern at finite B . Magnetotransport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin conserving and spin flip, which form closed loops at critical magnetic fields. Finally, in one such loop, an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

The contribution of low-energy protons to the total on-orbit SEU rate

Low- and high-energy proton experimental data and error rate predictions are presented for many bulk Si and SOI circuits from the 20-90 nm technology nodes to quantify how much low-energy protons (LEPs) can contribute to the total on-orbit single-event upset (SEU) rate. Every effort was made to predict LEP error rates that are conservatively high; even secondary protons generated in the spacecraft shielding have been included in the analysis. Across all the environments and circuits investigated, and when operating within 10% of the nominal operating voltage, LEPs were found to increase the total SEU rate to up to 4.3 times as high as it would have been in the absence of LEPs. Therefore, the best approach to account for LEP effects may be to calculate the total error rate from high-energy protons and heavy ions, and then multiply it by a safety margin of 5. If that error rate can be tolerated then our findings suggest that it is justified to waive LEP tests in certain situations. Trends were observed in the LEP angular responses of the circuits tested. As a result, grazing angles were the worst case for the SOI circuits, whereas the worst-case angle was at or near normal incidence for the bulk circuits.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2015

SU-E-J-189: Determination of Markerless Lung Tumor Position in Real Time: A Feasibility Study Using a Novel Tomo-Cinegraphy Imaging

Purpose: A Tomo-Cinegraphy (TC) is a method to generate a series of temporal tomographic images from projection images of the on-board imager (OBI) while gantry is moving. It is to test if this technique is useful to determine a lung tumor position during treatments. Methods: Tomographic image via background subtraction, TIBS uses a priori anatomical information from a previous CT scan to isolate a SOI from a planar kV image by factoring out the attenuations by tissues outside the SOI (background). This idea was extended to a TC, which enables to generate tomographic images of same geometry from the projection of different gantry angles and different breathing phases. Projection images of a lung patient for CBCT acquisition are used to generate TC images. A region of interest (ROI) is selected around a tumor adding 2cm margins. Center of mass (COM) of the ROI is traced to determine tumor position for every projection images. Results: Tumor is visible in the TC images while the OBI projections are not. The coordinates of the COMs represent the temporal tumor positions. While, it is not possible to trace the tumor motion using the projection images. A source of time delay is the time to acquire projection images, which is always less than a second. Conclusion: TC allows tracking the tumor positions without fiducial markers in real time for some lung patients, if the projection images are acquired during treatments. Partially supported by NIH R01CA133539.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2021

Real-time GW -BSE investigations on spin-valley exciton dynamics in monolayer transition metal dichalcogenide

We develop an ab initio nonadiabatic molecular dynamics (NAMD) method based on GW plus real-time Bethe-Salpeter equation (GW + rtBSE-NAMD) for the spin-resolved exciton dynamics. From investigations on MoS 2 , we provide a comprehensive picture of spin-valley exciton dynamics where the electron-phonon (e-ph) scattering, spin-orbit interaction (SOI), and electron-hole (e-h) interactions come into play collectively. In particular, we provide a direct evidence that e-h exchange interaction plays a dominant role in the fast valley depolarization within a few picoseconds, which is in excellent agreement with experiments. Moreover, there are bright-to-dark exciton transitions induced by e-ph scattering and SOI. Our study proves that e-h many-body effects are essential to understand the spin-valley exciton dynamics in transition metal dichalcogenides and the newly developed GW + rtBSE-NAMD method provides a powerful tool for exciton dynamics in extended systems with time, space, momentum, energy, and spin resolution.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction

It is shown that two electrons situated in a quantum well near a metallic electrode are attracted to each other due to the Bychkov–Rashba spin–orbit interaction (SOI) and electrostatic image forces. For quite accessible values of the characteristic parameters of the system, the effective attraction due to the SOI dominates over the Coulomb repulsion, and the formation of a bielectron becomes possible. The theory of the effect is especially simple and clear in the case of a quantum wire. The binding energy of the electron pair significantly increases under the application of a gate voltage of appropriate polarity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices

CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding their functionality. The most promising is the research and development of spintronic devices, which will allow using both electron charge and spin degrees of freedom for transmission, storage and processing of information. In this work we report the fabrication process of 3-terminal (3-T) ferromagnet/silicon devices of two types. First is the planar Fe{sub 3}Si/Si 3-T structure with 5 μm gap between closest ferromagnetic electrodes. Second is silicon nanowire back-gate transistor with Fe film source and drain synthesized on SOI substrate. Transport and magnetotransport properties of both devices are investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Xyce Parallel Electronic Simulator Reference Guide Version 6.6.

This document is a reference guide to the Xyce Parallel Electronic Simulator, and is a companion document to the Xyce Users' Guide [1] . The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce . This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce Users' Guide [1] . The information herein is subject to change without notice. Copyright c 2002-2016 Sandia Corporation. All rights reserved. Acknowledgements The BSIM Group at the University of California, Berkeley developed the BSIM3, BSIM4, BSIM6, BSIM-CMG and BSIM-SOI models. The BSIM3 is Copyright c 1999, Regents of the University of California. The BSIM4 is Copyright c 2006, Regents of the University of California. The BSIM6 is Copyright c 2015, Regents of the University of California. The BSIM-CMG is Copyright c 2012 and 2016, Regents of the University of California. The BSIM-SOI is Copyright c 1990, Regents of the University of California. All rights reserved. The Mextram model has been developed by NXP Semiconductors until 2007, Delft University of Technology from 2007 to 2014, and Auburn University since April 2015. Copyrights c of Mextram are with Delft University of Technology, NXP Semiconductors and Auburn University. The MIT VS Model Research Group developed the MIT Virtual Source (MVS) model. Copyright c 2013 Massachusetts Institute of Technology (MIT). The EKV3 MOSFET model was developed by the EKV Team of the Electronics Laboratory-TUC of the Technical University of Crete. Trademarks Xyce TM Electronic Simulator and Xyce TM are trademarks of Sandia Corporation. Orcad, Orcad Capture, PSpice and Probe are registered trademarks of Cadence Design Systems, Inc. Microsoft, Windows and Windows 7 are registered trademarks of Microsoft Corporation. Medici, DaVinci and Taurus are registered trademarks of Synopsys Corporation. Amtec and TecPlot are trademarks of Amtec Engineering, Inc. All other trademarks are property of their respective owners. Contacts World Wide Web http://xyce.sandia.gov https://info.sandia.gov/xyce (Sandia only) Email xyce@sandia.gov (outside Sandia) xyce-sandia@sandia.gov (Sandia only) Bug Reports (Sandia only) http://joseki-vm.sandia.gov/bugzilla http://morannon.sandia.gov/bugzilla

47 OTHER INSTRUMENTATION↗
DOE OSTI2016

Xyce Parallel Electronic Simulator Users' Guide Version 6.6.

This manual describes the use of the Xyce Parallel Electronic Simulator. Xyce has been de- signed as a SPICE-compatible, high-performance analog circuit simulator, and has been written to support the simulation needs of the Sandia National Laboratories electrical designers. This development has focused on improving capability over the current state-of-the-art in the following areas: Capability to solve extremely large circuit problems by supporting large-scale parallel com- puting platforms (up to thousands of processors). This includes support for most popular parallel and serial computers. A differential-algebraic-equation (DAE) formulation, which better isolates the device model package from solver algorithms. This allows one to develop new types of analysis without requiring the implementation of analysis-specific device models. Device models that are specifically tailored to meet Sandia's needs, including some radiation- aware devices (for Sandia users only). Object-oriented code design and implementation using modern coding practices. Xyce is a parallel code in the most general sense of the phrase -- a message passing parallel implementation -- which allows it to run efficiently a wide range of computing platforms. These include serial, shared-memory and distributed-memory parallel platforms. Attention has been paid to the specific nature of circuit-simulation problems to ensure that optimal parallel efficiency is achieved as the number of processors grows. The information herein is subject to change without notice. Copyright c 2002-2016 Sandia Corporation. All rights reserved. Acknowledgements The BSIM Group at the University of California, Berkeley developed the BSIM3, BSIM4, BSIM6, BSIM-CMG and BSIM-SOI models. The BSIM3 is Copyright c 1999, Regents of the University of California. The BSIM4 is Copyright c 2006, Regents of the University of California. The BSIM6 is Copyright c 2015, Regents of the University of California. The BSIM-CMG is Copyright c 2012 and 2016, Regents of the University of California. The BSIM-SOI is Copyright c 1990, Regents of the University of California. All rights reserved. The Mextram model has been developed by NXP Semiconductors until 2007, Delft University of Technology from 2007 to 2014, and Auburn University since April 2015. Copyrights c of Mextram are with Delft University of Technology, NXP Semiconductors and Auburn University. The MIT VS Model Research Group developed the MIT Virtual Source (MVS) model. Copyright c 2013 Massachusetts Institute of Technology (MIT). The EKV3 MOSFET model was developed by the EKV Team of the Electronics Laboratory-TUC of the Technical University of Crete. Trademarks Xyce TM Electronic Simulator and Xyce TM are trademarks of Sandia Corporation. Orcad, Orcad Capture, PSpice and Probe are registered trademarks of Cadence Design Systems, Inc. Microsoft, Windows and Windows 7 are registered trademarks of Microsoft Corporation. Medici, DaVinci and Taurus are registered trademarks of Synopsys Corporation. Amtec and TecPlot are trademarks of Amtec Engineering, Inc. All other trademarks are property of their respective owners. Contacts World Wide Web http://xyce.sandia.gov https://info.sandia.gov/xyce (Sandia only) Email xyce@sandia.gov (outside Sandia) xyce-sandia@sandia.gov (Sandia only) Bug Reports (Sandia only) http://joseki-vm.sandia.gov/bugzilla http://morannon.sandia.gov/bugzilla

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

A license plate for your satellite: ELROI [Poster]

Space Object Identification (SOI) is a problem. 19,000+ satellites and debris are tracked 24/7. It's not easy to tell what a satellite is or who owns it just by looking. If tracking is interrupted, re-ID is expensive and takes time. CubeSats (deployed dozens at a time) may not be individually identified at all. SOI is simplified if everything goes into space with a standard "license plat" that can be read from the ground. There is an opportunity for LANL to pioneer this technology.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Speaker-targeted Synthetic Speech Detection

Text-to-speech technologies are evolving quickly towards realistic-sounding human-like voices. As this technology improves, so does the opportunity for malpractice in speaker identification (SID) via spoofing, the process of impersonating a voice biometric via synthesis. More data typically equates to a more realistic voice model, which poses an issue for well-known subjects, such as politicians and celebrities, who have vast amounts of multimedia available online. Detection of synthetic speech has relied on signal processing techniques that focus on the generation of new acoustic features and train deep learning models to detect when an audio file has been manipulated through the characterization of unnatural changes or artifacts. However, these techniques do not use any information from the speaker they are evaluating. This paper proposes to incorporate information from the speaker-of-interest (SoI) into the models to avoid specific spoofing attacks for certain vulnerable people. The wealth of data for well-known people can also be used to train a speaker-specific spoofing detector with a higher level of accuracy than a speaker-independent model. The paper proposes a new xResNet-PLDA system and compares it to three different baseline systems: a state-of-the-art speaker identification system, an xResNet system trained to discriminate between bona fide and fake speech, and a speaker identification system in which the PLDA and calibration models were trained with bona fide and fake speech. We evaluated the systems in two different scenarios — a cross-validation scenario and a hold-out scenario — with three different databases. We show how the proposed system outperforms dramatically the baseline systems in each scenario and for each database. Finally, we show how using a small amount of the SoI’s speech to adapt global calibration parameters improves the performance of the system, especially in unseen conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

A MEMS Gyroscope for Reliable Long Duration Measurement While Drilling at 300°C

The 300°C Microelectromechanical system (MEMS) gyroscope project aims to contribute to DOE’s goal of increased geothermal drilling efficiency by 2025 through the development of a 300°C MEMS gyroscope for Measurement While Drilling (MWD). At the conclusion of the 2-year project, the team will develop a 300°C capable MEMS gyroscope containing GE’s patented Multi-Ring Gyroscope Transducer (MRGT) design, custom Silicon-On-Insulator (SOI) based frontend and feedback control electronics, and with demonstrated functionality and lifetime beyond 1000 hours. The project is divided into two budget periods with Go/No-Go decision at the end of the first budget period. The goal for the first budget period is to establish the feasibility of the MRGT and electronics design for meeting the 300°C performance requirements. The goal for the second budget period is to integrate the MRGT with the SOI-based application specific integrated circuit (ASIC) and demonstrate capability to operate at 300°C for 1000 hours. In Budget Period 1 we met the phase 1 goal. We successfully validated the combined MRG, electronics and packaging capability entitlement to achieving 0.5 degrees azimuth uncertainty while enabling operation at significantly higher temperatures than the state-of-the-art. In Budget Period 2, we successfully completed the integration of the MRGT and ASIC with associated high temperature, high reliability packaging to demonstrate the performance and functionality of the integrated gyroscope across the temperature range from room temperature to at 300°C. Furthermore, the team demonstrated operating life of >1,000 hours at 300°C, thus providing a validation of application-relevant lifetime capability.

15 GEOTHERMAL ENERGY↗
DOE OSTI2022

Report Series: Evaluation, Finding Of Effect, And Mitigation Documentation For Building 23-113, Mercury, Area 23, Nevada National Security Site, Nye County, Nevada

The U.S. Department of Energy (DOE) National Nuclear Security Administration Nevada Field Office (NNSA/NFO) plans to demolish Building 23-113 in Mercury (Nevada State Historic Preservation Office [SHPO] Resource No. B15236), which is on the Nevada National Security Site (NNSS) in Nye County, Nevada. Demolition of Building 23-113 is part of the long-term project to modernize the town of Mercury on the NNSS for future mission needs. The project is considered an undertaking subject to review under Title 54 of United States Code (USC) § 306108, commonly known as Section 106 of the National Historic Preservation Act, Title 54 USC § 300101, et seq., and its implementing regulations, Title 36 of the Code of Federal Regulations (36 CFR) Part 800. In 2018, Desert Research Institute (DRI) completed an architectural survey of the town of Mercury. This effort resulted in the identification, recordation, and evaluation of the Mercury Historic District (MHD, SHPO Resource No. D230), including the identification of its contributing elements (Reno et al. 2018). The MHD was recommended eligible for listing in the National Register of Historic Places (NRHP, National Register) under the Secretary of the Interior’s (SOI) Significance Criteria A and C, as defined in 36 CFR Part 60.4, as a significant concentration of buildings and structures with a direct and important association with Cold War-era nuclear testing from 1951 through 1992. It has not been evaluated under Criteria B and D to date. As part of a larger modernization program for Mercury, the NNSA/NFO and the SHPO executed the 2018 Programmatic Agreement between the National Nuclear Security Administration Nevada Field Office and the Nevada State Historic Preservation Officer regarding Modernization and Operational Maintenance of the Nevada National Security Site, at Mercury in Nye County, Nevada (the Mercury PA). The Mercury PA includes streamlined Section 106 procedures for undertakings in the MHD based on contributing element categories. Building 23-113 is identified in Appendix C of the Mercury PA as a Category I contributing element, indicating that it might be individually eligible for the NRHP. It is a historic property for the purposes of Section 106 compliance and subject to the stipulations of the Mercury PA. Per Stipulation VI of the Mercury PA, when the Area of Potential Effect (APE) for an undertaking includes Category I elements, the NNSA/NFO must evaluate the Category I elements for individual NRHP eligibility under all of the SOI Significance Criteria prior to initiating any activity that may affect the elements. Therefore, the purpose of this report is to evaluate Building 23-113 as a potential individually eligible historic property in fulfillment of Stipulation VI of the Mercury PA. The evaluation detailed herein concludes that although Building 23-113 is significant at the local level for its important role as a recreational facility on the NNSS, the building lacks sufficient integrity to convey its significance. It is not individually eligible for listing in the NRHP at any level. The building remains eligible as a contributing element to the MHD.

54 ENVIRONMENTAL SCIENCES↗