Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Resistive switching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Integration of Ultrawide Bandgap Photoconducting Semiconductor Switches into High-Voltage, High-Current Pulser Systems

In this feasibility study we will evaluate the viability of integrating ultrawide bandgap (UWBG) photoconducting semiconductor switches (PCSS) in high-voltage pulser systems capable of driving low-impedance dynamic loads critical for next-generation accelerator and RF-source applications. The project consisted of developing modelling tools that would inform design of UWBG PCSS packages that could be mounted onto conventional circuit boards. Specifically, we are interested in evaluating the following through simulation software: (1) resistance to electrical breakdown (2) proximity effects due to high-frequency skin effect (3) transient behavior from switching (4) effective transmission of RF signals (5) thermal dynamics of the switch under operation (6) sensitivity to inhomogeneities in optical excitation of the material (7) cross-talk effects from parallel switching structures, and (8) susceptibility of system to damaged components. The project resulted in the development of a special-purpose circuit code that implements photoconductivity physics. This code was used to evaluate objectives 1-6 above, identifying a critical requirement associated with the need for fine control of dopant concentrations in the UWBG material to reach an optimal solution for voltage standoff and laser light responsivity requirements. In addition, we identified that the temperature dependence of the electrical conductivity of this material was typically not well-measured and developed a platform for measuring both the “dark” and “illuminated” conductivity on real physical switches in the lab to better inform our models.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Evaluation of radiation hardness of High-Voltage silicon vertical JFETs

In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2 * 10 15 neq/cm 2 along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). Overall, this paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Positive spin Hall magnetoresistance in single-crystalline Pt/CoO(001) bilayers

Here, the spin Hall magnetoresistance (SMR) effect in single-crystalline Pt/CoO(001) bilayers has been systematically investigated. X-ray magnetic linear dichroism measurements prove that CoO antiferromagnetic (AFM) spins can be switched into the direction orthogonal to the applied field. We find the SMR signal is comprised of two components related to either the switching of CoO AFM Néel order or the applied strong field effect. Both SMR components show a “positive” angular dependence with $R_{∥} > R_{⊥}$, while $R_{∥} (R_{⊥})$ is defined as the resistance with the applied in-plane field parallel (perpendicular) to the current. The observed positive SMR is mainly attributed to the uncompensated spins at the Pt/CoO interface, instead of the CoO AFM spins. Our study may attract a great deal of interest to understand the complicated SMR effect in AFM spintronics materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Dynamic subcanopy leaf traits drive resistance of net primary production across a disturbance severity gradient

Across the globe, the forest carbon sink is increasingly vulnerable to an expanding array of low- to moderate-severity disturbances. However, some forest ecosystems exhibit functional resistance (i.e., the capacity of ecosystems to continue functioning as usual) following disturbances such as extreme weather events and insect or fungal pathogen outbreaks. Unlike severe disturbances (e.g., stand-replacing wildfires), moderate severity disturbances do not always result in near-term declines in forest production because of the potential for compensatory growth, including enhanced subcanopy production. Community-wide shifts in subcanopy plant functional traits, prompted by disturbance-driven environmental change, may play a key mechanistic role in resisting declines in net primary production (NPP) up to thresholds of canopy loss. However, the temporal dynamics of these shifts, as well as the upper limits of disturbance for which subcanopy production can compensate, remain poorly characterized. In this study, we leverage a 4-year dataset from an experimental forest disturbance in northern Michigan to assess subcanopy community trait shifts as well as their utility in predicting ecosystem NPP resistance across a wide range of implemented disturbance severities. Through mechanical girdling of stems, we achieved a gradient of severity from 0% (i.e., control) to 45, 65, and 85% targeted gross canopy defoliation, replicated across four landscape ecosystems broadly representative of the Upper Great Lakes ecoregion. We found that three of four examined subcanopy community weighted mean (CWM) traits including leaf photosynthetic rate (p = 0.04), stomatal conductance (p = 0.07), and the red edge normalized difference vegetation index (p < 0.0001) shifted rapidly following disturbance but before widespread changes in subcanopy light environment triggered by canopy tree mortality. Surprisingly, stimulated subcanopy production fully compensated for upper canopy losses across our gradient of experimental severities, achieving complete resistance (i.e., no significant interannual differences from control) of whole ecosystem NPP even in the 85% disturbance treatment. Additionally, we identified a probable mechanistic switch from nutrient-driven to light-driven trait shifts as disturbance progressed. Our findings suggest that remotely sensed traits such as the red edge normalized difference vegetation index (reNDVI) could be particularly sensitive and robust predictors of production response to disturbance, even across compositionally diverse forests. The potential of leaf spectral indices to predict post-disturbance functional resistance is promising given the capabilities of airborne to satellite remote sensing. We conclude that dynamic functional trait shifts following disturbance can be used to predict production response across a wide range of disturbance severities.

resistance↗
DOE OSTI2023

Performance assessment of active insulation systems in residential buildings for energy savings and peak demand reduction

Active insulation systems (AISs) in buildings are envelopes that integrate thermal insulation, thermal energy storage, and controls. Although different designs for AISs have been proposed in the literature, a comprehensive analysis of feasible AISs is lacking. This paper discusses the energy performance, peak demand reduction potential, and performance characteristics of an AIS that uses a concrete wall as thermal mass sandwiched between two solid-state thermal switches (STSs). These STSs change their thermal conductivity using an on/off metal switch to create or break a thermal bridge across the STS. This paper first describes the experimental setup, used to determine the ratio of thermal resistance during R-high (low thermal conductivity) and R-low (high thermal conductivity) states of the STSs. This ratio was then used in whole-building energy simulations to evaluate the performance of AIS walls across different climate zones with/without a freeze timer of 60 min. The timer was added to reduce the number of switches of STSs from one state to another, and hence the energy needed for these switches. Analysis of the switching frequency and interval of STSs, thermal conductivity of walls, impact of wall orientation, and heat transfer through the wall from the use of AIS at different climate zones/locations were performed. The simulation results show that the AIS can achieve energy savings ranging from ~980 to 2,290 kWh in a single-family home with a floor area of ~220 m 2 compared with an IECC 2018 baseline. We found the energy savings was higher in dry climate zones which represent 17% of residential buildings in the United States, compared to humid or marine climate.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

Pushing the Envelope-Moving Dynamic Building Envelope Thermal Energy Storage Systems Mainstream: Preprint

Buildings contribute to nearly 40% of the U.S. national energy consumption and a significant portion of CO2 emissions. More importantly, disadvantaged communities are disproportionately affected by energy burden and thermal discomfort in their homes. This paper will discuss two novel DOE's BTO supported thermal energy storage (TES) integrated dynamic building envelope technologies, their ability to harvest ambient energy, and improve energy efficiency by reducing HVAC loads and peak electricity demand while enhancing energy and thermal resilience in buildings. The paper will also discuss the recent advancements that have made these systems more affordable and easier to integrate into new and existing buildings. The first solution is a thermally anisotropic building envelope (TABE) system that can redirect ambient thermal energy (heat or coolness) from diurnal outdoor conditions, solar irradiance, and night sky radiation from the envelope to a hydronic loop. The redirected thermal energy can be stored in a TABE-integrated thermal energy storage system and use the stored energy to offset HVAC energy use and peak demand. The second solution is an innovative plug-and-play thermal switch in the form of insertable plugs integrated with a phase change material (PCM). The plug can vary its thermal resistance based on the indoor and outdoor conditions, thus allowing preferential directional heat flow, and enhancing utilization of free ambient cooling and heating to charge/discharge the PCM, much like a solid-state economizer. While the fist solution can be actively controlled, the second solution is passive, requiring no external power, and work solely based on the ambient temperature.

anisotropic envelope↗
DOE OSTI2024

A Multi-Metrics In Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability

In this paper, the concept and prototype of an aging detector for silicon carbide (SiC) power metal oxide semiconductor field effect transistor (MOSFET) are proposed and described. It leverages the resonant peak values of gate-source voltage at different instants during the switching transients to decode the change of multiple aging indicators, such as the increases of on-state resistance and threshold voltage. Modeling-based analysis is conducted to support the idea. The detector can be fully integrated into gate drivers without any additional connection to the power stage and is functional during normal power stage operation. A prototype unit was built, and preliminary tests were conducted to validate the idea and the practicality of the detector.

aging↗
DOE OSTI2026

Probing Surface Hydration and Isotope Exchange Kinetics in Proton-Conducting Ceramics Using DRIFTS and EIS

This internship project investigates how water vapor partial pressure (pH2O) affects surface hydration and H/D isotope-exchange kinetics in BaZr0.4Ce0.4Y0.1Yb0.1O3?d (4411) proton-conducting ceramic electrolytes. Diffuse reflectance infrared Fourier-transform spectroscopy (DRIFTS) is used to monitor surface hydroxyl and deuteroxyl species under controlled humidified atmospheres during gas-switching experiments. These surface kinetic trends are to be correlated with bulk, grain-boundary, and total electrolyte resistance measured by electrochemical impedance spectroscopy (EIS) under matching conditions. The future goals of this study are to clarify the relationship between surface hydration dynamics and proton conduction behavior, improving interpretation of EIS data and guiding the optimization of ceramic electrolytes for energy applications.

08 - HYDROGEN↗
DOE OSTI2020

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.

4-Quadrant switch↗
DOE OSTI2020

1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. Here, the BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Single-shot switching in Tb/Co-multilayer based nanoscale magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal of the magnetization by an ultrashort laser pulse is extremely important. Here we demonstrate single-shot switching of Tb/Co-multilayer based nanoscale MTJs by combining the optical writing and the electrical read-out methods. A 90-fs-long laser pulse switches the magnetization of the storage layer (SL). The change in the tunneling magnetoresistance (TMR) between the SL and a reference layer (RL) is probed electrically across the oxide barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The nature of the magnetization reversal of both SL and RL in a continuous film is probed with a depth-resolved magneto-optical Kerr effect (MOKE) magnetometry. The ultrafast dynamics in the continuous full-MTJ stack is investigated with the time-resolved pump–probe technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Retrofittable Thermal Switches for Dynamic Building Envelopes Integrated with Thermal Energy Storage: Preprint

Buildings in the United States consume about 40 quadrillion BTU of primary energy annually, which accounts for the nation's 40% of total energy use, 75% of all electricity use, and 35% of the net carbon emissions. Deploying thermal energy storage in the form of phase change material (PCM) in building envelopes is an effective method to reduce space heating/cooling loads, provide load shedding, and shift demand to periods of lower energy cost. However, the full potential of PCM-integrated envelopes can only be realized if the PCM undergoes complete phase change using free ambient heating/cooling, and the stored energy is effectively transferred between the exterior and the interior environments. Conventional thermal insulation (with a fixed thermal resistance) limits PCM utilization, particularly with the increasing emphasis on higher R-value in building envelopes, which negatively affects the energy-saving potential of a PCM-integrated envelope. In contrast, dynamic building envelopes integrated with PCMs provide the option of varying the thermal resistance based on the indoor and outdoor conditions, thereby enhancing utilization of free ambient cooling and heating to charge/discharge the PCM thermal storage, reducing the buildings' heating and cooling load, and shifting the peak energy demand. In this study, we demonstrate innovative retrofittable thermal switches in the form of the insertable plugs inside an insulation to provide variable thermal resistance depending on the operating temperature and direction of temperature gradient, thus allowing preferential directional heat flow. Notably, they are passive in nature, requiring no external power, and work solely based on the ambient temperature.

buildings↗
DOE OSTI2024

Pushing the Envelope—Moving Dynamic Building Envelope Thermal Energy Storage Systems Mainstream

Buildings contribute to nearly 40% of the U.S. national energy consumption and a significant portion of CO2 emissions. More importantly, disadvantaged communities are disproportionately affected by energy burden and thermal discomfort in their homes. This paper will discuss two novel DOE's BTO supported thermal energy storage (TES) integrated dynamic building envelope technologies, their ability to harvest ambient energy, and improve energy efficiency by reducing HVAC loads and peak electricity demand while enhancing energy and thermal resilience in buildings. The paper will also discuss the recent advancements that have made these systems more affordable and easier to integrate into new and existing buildings. The first solution is a thermally anisotropic building envelope (TABE) system that can redirect ambient thermal energy (heat or coolness) from diurnal outdoor conditions, solar irradiance, and night sky radiation from the envelope to a hydronic loop. The redirected thermal energy can be stored in a TABE-integrated thermal energy storage system and use the stored energy to offset HVAC energy use and peak demand. The second solution is an innovative plug-and-play thermal switch in the form of insertable plugs integrated with a phase change material (PCM). The plug can vary its thermal resistance based on the indoor and outdoor conditions, thus allowing preferential directional heat flow, and enhancing utilization of free ambient cooling and heating to charge/discharge the PCM, much like a solid-state economizer. While the fist solution can be actively controlled, the second solution is passive, requiring no external power, and work solely based on the ambient temperature.

Shrestha, Som↗
DOE OSTI2023

Ferroelectric Schottky diodes of CuInP 2 S 6 nanosheet

Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP 2 S 6 (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. Here, we report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current–voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2022

UK-US Collaboration on Fossil Energy R&D: Steam Side Oxidation

In recent years, interest in increasing the efficiency of power plants based on steam generation has led to the need to develop and qualify materials capable of operating at steam temperatures and pressures significantly higher than those employed in current power plants. The overall focus of this international program is on using ferritic-martensitic steels to the maximum possible temperature, before switching to austenitic steels and/or Ni-based alloys. The relatively low Cr content of these alloys raises concerns regarding their resistance to steam oxidation at these higher temperatures. Earlier work in this collaboration addressed the reliability of data from atmospheric pressure, laboratory-based steam oxidation tests. This raised issues regarding how representative the laboratory-grown oxides were compared to those formed on service-exposed material and how the tests could be made more reliable by introducing added complexity. In general laboratory-scale exposures are conducted under isothermal conditions at ambient or slightly elevated pressure, using a relatively low flow rate of steam. The coupons used in these tests are normally flat cuboids which have been ground to homogenise the surface and remove any pre-existing features. However, there is a concern that these samples and exposures are not representative of service conditions, and so it is necessary to quantify the influence of transient conditions, such as heat flux, pressure and sample geometry/surface conditions. To address such concerns a new collaborative program of work was initiated to determine the influence of these added features on oxidation kinetics and oxide scale morphology. The overall aim was to improve the understanding of alloy performance in ultrasupercritical (USC) steam conditions and qualify suitable test procedures.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2023

SwitchX : Gmin-Gmax Switching for Energy-efficient and Robust Implementation of Binarized Neural Networks on ReRAM Xbars

Memristive crossbars can efficiently implement Binarized Neural Networks (BNNs) wherein the weights are stored in high-resistance states (HRS) and low-resistance states (LRS) of the synapses. We propose SwitchX mapping of BNN weights onto ReRAM crossbars such that the impact of crossbar non-idealities, that lead to degradation in computational accuracy, are minimized. Essentially, SwitchX maps the binary weights in such a manner that a crossbar instance comprises of more HRS than LRS synapses. We find BNNs mapped onto crossbars with SwitchX to exhibit better robustness against adversarial attacks than the standard crossbar mapped BNNs, the baseline. Finally, we combine SwitchX with state-aware training (that further increases the feasibility of HRS states during weight mapping) to boost the robustness of a BNN on hardware. We find that this approach yields stronger defense against adversarial attacks than adversarial training, a state-of the-art software defense. We perform experiments on a VGG16 BNN with benchmark datasets (CIFAR-10, CIFAR-100 and TinyImagenet) and use Fast Gradient Sign Method (ϵ = 0.05 to 0.3) and Projected Gradient Descent (ϵ = $\frac{2}{255}$ to $\frac{32}{255}$, α = $\frac{2}{255}$) adversarial attacks. We show that SwitchX combined with state-aware training can yield upto ~35% improvements in clean accuracy and ~6–16% in adversarial accuracies against conventional BNNs. Furthermore, an important by-product of SwitchX mapping is increased crossbar power savings, owing to an increased proportion of HRS synapses, which is furthered with state-aware training. We obtain upto ~21–22% savings in crossbar power consumption for state-aware trained BNN mapped via SwitchX on 16 × 16 and 32 × 32 crossbars using the CIFAR-10 and CIFAR-100 datasets.

97 MATHEMATICS AND COMPUTING↗