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NASA NTRS2011

Prognostics of Power Mosfets Under Thermal Stress Accelerated Aging Using Data-Driven and Model-Based Methodologies

An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor switching devices that are instrumental in electronics equipment such as those used in operation and control of modern aircraft and spacecraft. The MOSFETs examined here were aged under thermal overstress in a controlled experiment and continuous performance degradation data were collected from the accelerated aging experiment. Dieattach degradation was determined to be the primary failure mode. The collected run-to-failure data were analyzed and it was revealed that ON-state resistance increased as die-attach degraded under high thermal stresses. Results from finite element simulation analysis support the observations from the experimental data. Data-driven and model based prognostics algorithms were investigated where ON-state resistance was used as the primary precursor of failure feature. A Gaussian process regression algorithm was explored as an example for a data-driven technique and an extended Kalman filter and a particle filter were used as examples for model-based techniques. Both methods were able to provide valid results. Prognostic performance metrics were employed to evaluate and compare the algorithms.

Electrolytic capacitors↗

NASA NTRS1993

INPIStron switched pulsed power for dense plasma pinches

The inverse plasma switch INPIStron was employed for 10kJ/40kV capacitor bank discharge system to produce focused dense plasmas in hypocycloidal-pinch (HCP) devices. A single unit and an array of multiple HCP's were coupled as the load of the pulsed power circuit. The geometry and switching plasma dynamics were found advantageous and convenient for commutating the large current pulse from the low impedance transmission line to the low impedance plasma load. The pulse power system with a single unit HCP, the system A, was used for production of high temperature plasma focus and its diagnostics. The radially running down plasma dynamics, revealed in image converter photographs, could be simulated by a simple snow-plow model with a correction for plasma resistivity. The system B with an array of 8-HCP units which forms a long coaxial discharge chamber was used for pumping a Ti-sapphire laser. The intense UV emission from the plasma was frequency shifted with dye-solution jacket to match the absorption band of the Ti crystal laser near 500 nm. An untuned laser pulse energy of 0.6 J/pulse was obtained for 6.4 kJ/40 kV discharge, or near 103 times of the explosion limit of conventional flash lamps. For both systems the advantages of the INPIStron were well demonstrated: a single unit is sufficient for a large current (greater than 50 kA) without increasing the system impedance, highly reliable and long life operation and implied scalability for the high power ranges above I(sub peak) = 1 MA and V(sub hold) = 100 kV.

Han, Kwang S.↗

NASA NTRS2002

Performance of High-frequency High-flux Magnetic Cores at Cryogenic Temperatures

Three magnetic powder cores and one ferrite core, which are commonly used in inductor and transformer design for switch mode power supplies, were selected for investigation at cryogenic temperatures. The powder cores are Molypermalloy Core (MPC), High Flux Core (HFC), and Kool Mu Core (KMC). The performance of four inductors utilizing these cores has been evaluated as a function of temperature from 20 C to -180 C. All cores were wound with the same wire type and gauge to obtain equal values of inductance at room temperature. Each inductor was evaluated in terms of its inductance, quality (Q) factor, resistance, and dynamic hysteresis characteristics (B-H loop) as a function of temperature and frequency. Both sinusoidal and square wave excitations were used in these investigations. Measured data obtained on the inductance showed that both the MPC and the HFC cores maintain a constant inductance value, whereas with the KMC and ferrite core hold a steady value in inductance with frequency but decrease as temperature is decreased. All cores exhibited dependency, with varying degrees, in their quality factor and resistance on test frequency and temperature. Except for the ferrite, all cores exhibited good stability in the investigated properties with temperature as well as frequency. Details of the experimental procedures and test results are presented and discussed in the paper.

Gerber, Scott S.↗

NASA NTRS2010

Effects of Temperature on the Performance and Stability of Recent COTS Silicon Oscillators

Silicon oscillators have lately emerged to serve as potential replacement for crystal and ceramic resonators to provide timing and clock signals in electronic systems. These semiconductor-based devices, including those that are based on MEMS technology, are reported to be resistant to vibration and shock (an important criteria for systems to be deployed in space), immune to EMI, consume very low current, require few or no external components, and cover a wide range of frequency for analog and digital circuits. In this work, the performance of five recently-developed COTS silicon oscillator chips from different manufacturers was determined within a temperature range that extended beyond the individual specified range of operation. In addition, restart capability at extreme temperatures, i.e. power switched on while the device was soaking at extreme (hot or cold) temperature, and the effects of thermal cycling under a wide temperature range on the operation of these silicon oscillators were also investigated. Performance characterization of each oscillator was obtained in terms of its output frequency, duty cycle, rise and fall times, and supply current at specific test temperatures. The five different oscillators tested operated beyond their specified temperature region, with some displaying excellent stability throughout the whole test temperature range. Others experienced some instability at certain temperature test points as evidenced by fluctuation in the output frequency. Recovery from temperature-induced changes took place when excessive temperatures were removed. It should also be pointed out that all oscillators were able to restart at the extreme test temperatures and to withstand the limited thermal cycling without undergoing any significant changes in their characteristics. In addition, no physical damage was observed in the packaging material of any of these silicon oscillators due to extreme temperature exposure and thermal cycling. It is recommended that additional and more comprehensive testing under long term cycling be carried out to fully establish the reliability of these devices and to determine their suitability for use in space exploration missions under extreme temperature conditions.

Patterson, Richard L.↗

NASA NTRS1999

Study the Effects of Charged Particle Radiation on Gravitational Sensors in Space

Space-flight charging of free floating masses poses an unusual problem-- how can one control charge on the object without exerting a significant force on it? One approach is to make contact to the object with a fine wire. However, for many precision applications no physical contact is permissible, so charge must be conveyed in, a more sophisticated manner. One method has already been developed: Gravitational Probe B (GP-B) uses an ultraviolet photo-emission system described in ref 1. This system meets the experiment requirements, yet poses a number of constraints, including high power dissipation (approximately 10 W peak, approximately 1 W average), low current output (approximately 10(exp -13) A), and potential reliability problems associated with fiber optics system and the UV source. The aim of the current research is to improve this situation and, if possible, develop a more rugged and lower power alternative, usable in a wide range of situations. An potential alternative to the UV electron source is a Spindt-type field emission cathode. These consist of an array of extremely sharp silicon tips mounted in a standard IC package with provision for biasing them relative to the case potential. They are attractive as electron sources for space applications due to their low power consumption (10(exp -5) W), high current levels (10(exp -9) to 10(exp -5) A), and the absence of mechanical switching. Unfortunately, existing cathodes require special handling to avoid contamination and gas absorption. These contaminants can cause severe current fluctuations and eventual destruction of the cathode tips. Another potential drawback is the absence of any data indicating the possibility of bipolar current flow. This capability is needed because of the large uncertainties in the net charge transfer from cosmic rays to a free floating mass in space. More recent devices reduce the current fluctuations and destructive arcing by mounting the tips on a resistive substrate rather than a good conductor. This effectively wires a resistor to each individual tip, providing a current limit and thus greatly reducing the possibility of destructive arcing through an individual tip. An issue with this resistive layer is its range of operating temperatures. From the experience with the GP-B system, we hypothesized about using secondary electron emission for control of net charge transfer to an object. An important goal of the testing described below was to demonstrate the ability to apply both positive and negative charges to the test object from a single emitter.

Lipa, John A.↗

NASA NTRS1998

The Effects of Ground and Space Processing on the Properties of Organic, Polymeric, and Colloidal Materials

In recent years, a great deal of interest has been directed toward the use of organic materials in the development of high-efficiency optoelectronic and phototonic devices. There is a myriad of possibilities among organic materials which allow flexibility in the design of unique structures with a variety of functional groups. The use of nonlinear optical (NLO) organic materials as thin film wave-guides allows full exploitation of their desirable qualifies by permitting long interaction lengths and large susceptibilities allowing modest power input. There are several methods in use to prepare thin films such as Langmuir-Blodgett (LB) and self-assembly techniques, vapor deposition, growth from sheared solution or melt, and melt growth between glass plates. Organic-based materials have many features that make them desirable for use in optical devices, such as high second-and third-order nonlinearity, flexibility of molecular design, and damage resistance to optical radiation. However, their use in devices has been hindered by processing difficulties for crystals and thin films. We discuss the potential role of microgravity processing of a few organic and polymeric materials. It is of interest to note how materials with second-and third-order NLO behavior may be improved in a diffusion-limited environment and ways in which convection may be detrimental to these materials. We focus our discussion on third-order materials for all-optical switching, and second-order materials for frequency conversion and electrooptics. The goal of minimizing optical loss obviously depends on processing methods. For solution-based processes, such as solution crystal growth and solution photopolymerization, it is well known that thermal and solutal density gradients can initiate buoyancy-driven convection. Resultant fluid flows can affect transport of material to and from growth interfaces and become manifest in the morphology and homogeneity of the growing film or crystal. Likewise, buoyancy-driven convection can hinder production of defect-free, high-quality crystals or films during crystal and film growth by vapor deposition.

Frazier, Donald O.↗

NASA NTRS1972

Experimental studies and applications of vanadium oxides.

The electrical and electrochemical properties of V-5 and V-7 vanadium oxides were investigated. The effects of pressure, temperature and moisture on the bulk resistivity of the oxides in powder, sintered, and crystalline form were determined, and the static and dynamic volt-ampere characteristics were obtained. Sintered samples tested showed better electrical stability than the compressed powder samples. Two types of commercially available vanadium pentoxide were heat-treated to obtain various crystalline oxide forms which were mounted on alumina substrates and terminated by thick-film conductors for making electrical connections. Indications are that these materials could have applications as sensors, critical-temperature resistors, high-speed switches, and temperature-compensation elements in hybrid microelectronic circuits.

Williams, L., Jr.↗

NASA NTRS1994

Copper Alloy For High-Temperature Uses

Alloy of Cu/8Cr/4Nb (numbers indicate parts by atom percent) improved over older high-temperature copper-based alloys in that it offers enhanced high temperature strength, resistance to creep, and ductility while retaining most of thermal conductivity of pure copper; in addition, alloy does not become embrittled upon exposure to hydrogen at temperatures as high as 705 degrees C. Designed for use in presence of high heat fluxes and active cooling; for example, in heat exchangers in advanced aircraft and spacecraft engines, and other high-temperature applications in which there is need for such material. High conductivity and hardness of alloy exploited in welding electrodes and in high-voltage and high-current switches and other applications in which wear poses design problem.

Dreshfield, Robert L.↗

NASA NTRS2012

NASA Tech Briefs, December 2012

The topics include: Pattern Generator for Bench Test of Digital Boards; 670-GHz Down- and Up-Converting HEMT-Based Mixers; Lidar Electro-Optic Beam Switch with a Liquid Crystal Variable Retarder; Feedback Augmented Sub-Ranging (FASR) Quantizer; Real-Time Distributed Embedded Oscillator Operating Frequency Monitoring; Software Modules for the Proximity-1 Space Link Interleaved Time Synchronization (PITS) Protocol; Description and User Instructions for the Quaternion to Orbit v3 Software; AdapChem; Mars Relay Lander and Orbiter Overflight Profile Estimation; Extended Testability Analysis Tool; Interactive 3D Mars Visualization; Rapid Diagnostics of Onboard Sequences; MER Telemetry Processor; pyam: Python Implementation of YaM; Process for Patterning Indium for Bump Bonding; Archway for Radiation and Micrometeorite Occurrence Resistance; 4D Light Field Imaging System Using Programmable Aperture; Device and Container for Reheating and Sterilization; Radio Frequency Plasma Discharge Lamps for Use as Stable Calibration Light Sources; Membrane Shell Reflector Segment Antenna; High-Speed Transport of Fluid Drops and Solid Particles via Surface Acoustic Waves; Compact Autonomous Hemispheric Vision System; A Distributive, Non-Destructive, Real-Time Approach to Snowpack Monitoring; Wideband Single-Crystal Transducer for Bone Characterization; Numerical Simulation of Rocket Exhaust Interaction With Lunar Soil; Motion Imagery and Robotics Application (MIRA): Standards-Based Robotics; Particle Filtering for Model-Based Anomaly Detection in Sensor Networks; Ka-band Digitally Beamformed Airborne Radar Using SweepSAR Technique; Composite With In Situ Plenums; Multi-Beam Approach for Accelerating Alignment and Calibration of HyspIRI-Like Imaging Spectrometers; JWST Lifting System; Next-Generation Tumbleweed Rover; Pneumatic System for Concentration of Micrometer-Size Lunar Soil.

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NASA NTRS1996

Radiation Protection of New Lightweight Electromagnetic Interference Shielding Materials Determined

Weight savings as high as 80 percent could be achieved by simply switching from aluminum electromagnetic interference (EMI) shielding covers for spacecraft power systems to EMI covers made from intercalated graphite fiber composites. Because EMI covers typically make up about one-fifth of the power system mass, this change would decrease the mass of a spacecraft power system by more than 15 percent. Intercalated graphite fibers are made by diffusing guest atoms or molecules, such as bromine, between the carbon planes of the graphite fibers. The resulting bromine-intercalated fibers have mechanical and thermal properties nearly identical to pristine graphite fibers, but their resistivity is lower by a factor of 5, giving them better electrical conductivity than stainless steel and making these composites suitable for EMI shielding.

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NASA NTRS1998

Microgravity Processing and Photonic Applications of Organic and Polymeric Materials

In recent years, a great deal of interest has been directed toward the use of organic materials in the development of high-efficiency optoelectronic and photonic devices. There is a myriad of possibilities among organic which allow flexibility in the design of unique structures with a variety of functional groups. The use of nonlinear optical (NLO) organic materials such as thin-film waveguides allows full exploitation of their desirable qualities by permitting long interaction lengths and large susceptibilities allowing modest power input. There are several methods in use to prepare thin films, such as Langmuir-Blodgett (LB) and self-assembly techniques, vapor deposition, growth from sheared solution or melt, and melt growth between glass plates. Organics have many features that make Abstract: them desirable for use in optical devices such as high second- and third-order nonlinearities, flexibility of molecular design, and damage resistance to optical radiation. However, their use in devices has been hindered by processing difficulties for crystals and thin films. In this chapter, we discuss photonic and optoelectronic applications of a few organic materials and the potential role of microgravity on processing these materials. It is of interest to note how materials with second- and third-order nonlinear optical behavior may be improved in a diffusion-limited environment and ways in which convection may be detrimental to these materials. We focus our discussion on third-order materials for all-optical switching, and second-order materials for all-optical switching, and second-order materials for frequency conversion and electrooptics.

Frazier, Donald 0↗

NASA NTRS2003

NASA Tech Briefs, February 2003

opics covered include: Integrated Electrode Arrays for Neuro-Prosthetic Implants; Eroding Potentiometers; Common/Dependent-Pressure-Vessel Nickel-Hydrogen Batteries; 120-GHz HEMT Oscillator With Surface-Wave-Assisted Antenna; 80-GHz MMIC HEMT Voltage-Controlled Oscillator; High-Energy-Density Capacitors; Microscale Thermal-Transpiration Gas Pump; Instrument for Measuring Temperature of Water; Improved Measurement of Coherence in Presence of Instrument Noise; Compact Instruments Measure Helium-Leak Rates; Irreversible Entropy Production in Two-Phase Mixing Layers; Subsonic and Supersonic Effects in Bose-Einstein Condensate; Nanolaminate Mirrors With "Piston" Figure-Control Actuators; Mixed Conducting Electrodes for Better AMTEC Cells; Process for Encapsulating Protein Crystals; Lightweight, Self-Deployable Wheels; Grease-Resistant O Rings for Joints in Solid Rocket Motors; LabVIEW Serial Driver Software for an Electronic Load; Software Computes Tape-Casting Parameters; Software for Tracking Costs of Mars Projects; Software for Replicating Data Between X.500 and LDAP Directories; The Technical Work Plan Tracking Tool; Improved Multiple-DOF SAW Piezoelectric Motors; Propulsion Flight-Test Fixture; Mechanical Amplifier for a Piezoelectric Transducer; Swell Sleeves for Testing Explosive Devices; Linear Back-Drive Differentials; Miniature Inchworm Actuators Fabricated by Use of LIGA; Using ERF Devices to Control Deployments of Space Structures; High-Temperature Switched-Reluctance Electric Motor; System for Centering a Turbofan in a Nacelle During Tests; Fabricating Composite-Material Structures Containing SMA Ribbons; Optimal Feedback Control of Thermal Networks; Artifacts for Calibration of Submicron Width Measurements; Navigating a Mobile Robot Across Terrain Using Fuzzy Logic; Designing Facilities for Collaborative Operations; and Quantitating Iron in Serum Ferritin by Use of ICP-MS.

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NASA NTRS2010

Multiscale Modeling of Solar Coronal Magnetic Reconnection

Magnetic reconnection is widely believed to be the primary process by which the magnetic field releases energy to plasma in the Sun's corona. For example, in the breakout model for the initiation of coronal mass ejections/eruptive flares, reconnection is responsible for the catastrophic destabilizing of magnetic force balance in the corona, leading to explosive energy release. A critical requirement for the reconnection is that it have a "switch-on' nature in that the reconnection stays off until a large store of magnetic free energy has built up, and then it turn on abruptly and stay on until most of this free energy has been released. We discuss the implications of this requirement for reconnection in the context of the breakout model for CMEs/flares. We argue that it imposes stringent constraints on the properties of the flux breaking mechanism, which is expected to operate in the corona on kinetic scales. We present numerical simulations demonstrating how the reconnection and the eruption depend on the effective resistivity, i.e., the effective Lundquist number, and propose a model for incorporating kinetic flux-breaking mechanisms into MHO calculation of CMEs/flares.

Antiochos, Spiro K.↗

NASA NTRS2000

Differences in Acceleration Training and Exercise Training on Resting Cardiovascular Variables

The relative effects of alternating exercise vs. acclamation training an mean blood pressure (BP, Finapres), cardiac output (CO, BoMed) and peripheral resistance (PR, calculated) were evaluated. Six healthy men (33$\pm$(SD)6 yr. 178$\pm$4 cm, 86$\pm$6 kg) underwent exercise training (ET, n=3): supine on a cycle ergometer (40 to 90\% Vo$_{2}$ max) during exposure to constant+1G$_{z}$ for $\sim$30 min/day for 14 days on NASA's 1.9m Human Powered Centrifuge (HPC). They also underwent oscillatory (between +1 G$ {z}$and$\sim$2.5G$_{z}$) acceleration training (AT, n=3) for $\sim$30 min/day for 14 days on the HPC. After four weeks of ambulatory deconditioning, training protocols were switched. AT increased resting CO by 9.MpmS(SE)3.2\% (p$less than$0.05) with no effect on BF, and ET decreased BP by 9.2$\pm$4.6\% (p$less than$0.08) as well as spectral power of PR by 41$\pm$9\% (p$less than$0.05). The major effect of acceleration training was to increase resting cardiac output while that of exercise mining was to decrease resting blood pressure.

Evans, J. M.↗

NASA NTRS2018

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗

NASA NTRS1975

Self-regulating proportionally controlled heating apparatus and technique

A self-regulating proportionally controlled heating apparatus and technique is provided wherein a single electrical resistance heating element having a temperature coefficient of resistance serves simultaneously as a heater and temperature sensor. The heating element is current-driven and the voltage drop across the heating element is monitored and a component extracted which is attributable to a change in actual temperature of the heating element from a desired reference temperature, so as to produce a resulting error signal. The error signal is utilized to control the level of the heater drive current and the actual heater temperature in a direction to reduce the noted temperature difference. The continuous nature of the process for deriving the error signal feedback information results in true proportional control of the heating element without the necessity for current-switching which may interfere with nearby sensitive circuits, and with no cyclical variation in the controlled temperature.

Strange, M. G.↗

NASA NTRS1999

Analyses of Transistor Punchthrough Failures

The failure of two transistors in the Altitude Switch Assembly for the Solid Rocket Booster followed by two additional failures a year later presented a challenge to failure analysts. These devices had successfully worked for many years on numerous missions. There was no history of failures with this type of device. Extensive checks of the test procedures gave no indication for a source of the cause. The devices were manufactured more than twenty years ago and failure information on this lot date code was not readily available. External visual exam, radiography, PEID, and leak testing were performed with nominal results Electrical testing indicated nearly identical base-emitter and base-collector characteristics (both forward and reverse) with a low resistance short emitter to collector. These characteristics are indicative of a classic failure mechanism called punchthrough. In failure analysis punchthrough refers to an condition where a relatively low voltage pulse causes the device to conduct very hard producing localized areas of thermal runaway or "hot spots". At one or more of these hot spots, the excessive currents melt the silicon. Heavily doped emitter material diffuses through the base region to the collector forming a diffusion pipe shorting the emitter to base to collector. Upon cooling, an alloy junction forms between the pipe and the base region. Generally, the hot spot (punch-through site) is under the bond and no surface artifact is visible. The devices were delidded and the internal structures were examined microscopically. The gold emitter lead was melted on one device, but others had anomalies in the metallization around the in-tact emitter bonds. The SEM examination confirmed some anomalies to be cosmetic defects while other anomalies were artifacts of the punchthrough site. Subsequent to these analyses, the contractor determined that some irregular testing procedures occurred at the time of the failures heretofore unreported. These testing irregularities involved the use of a breakout box and were the likely cause of the failures. There was no evidence to suggest a generic failure mechanism was responsible for the failure of these transistors.

Nicolas, David P.↗

NASA NTRS2001

Silicon Carbide Solar Cells Investigated

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Bailey, Sheila G.↗