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At least 199 records · Page 11

All sources NASA NTRS DOE OSTI

DOE OSTI2021

Fielding and analyzing performance of a prototype high voltage output gas switch for Saturn

Timing spread between the thirty-six Saturn modules affects peak electrical power delivered to the Bremsstrahlung diode and can affect vacuum power flow and impedance behavior of the load. To reduce the module spread, a new megavolt gas-insulated closing switch was developed employing design techniques developed for the Z-machine laser triggered switches while retaining Saturn’s simpler electrical triggering. Two modules were temporarily outfitted with the new switches and used separately into local resistive loads (instead of the usual Saturn electron beam load). A reliable operating point and switch time jitter at that point were the goals of the experiments. The target switch reliability is less than one pre-fire in one thousand switch-shots, and a timing standard deviation of 4 nanoseconds. The switches were able to meet both requirements but the number of tests at the chosen point are limited.

43 PARTICLE ACCELERATORS↗

NASA NTRS1993

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Attia, John Okyere↗

DOE OSTI2024

Navigating high-dimensional process-structure–property relations in nanocrystalline Pt-Au alloys with machine learning

For decades, materials scientists have relied on the process-structure–property paradigm to guide investigations into material behaviors. Traditional studies often examine a limited number of process-structure–property variables, striving to elucidate mechanisms governing material response. However, this approach is time consuming and can limit exploration, as well as the discovery of process-structure–property relations in novel materials. In this paper, we combined combinatorial sputter deposition and multi-modal high-throughput materials characterization with feedforward neural networks to establish high-dimensional process-structure–property relations in Pt-Au alloys, yielding nanocrystalline alloys with high hardness and low resistivity relevant to electrical contact switch applications. We mapped three indicators of process conditions (composition and two atomic deposition characteristics) onto four indicators of material structure (X-ray diffraction, film thickness, density, and surface roughness) and two indicators of material properties (hardness and resistivity), resulting in 784 unique combinations evaluated over a 13-dimensional space. The neural networks predicted Pt-Au alloys with 18–24 at.% Au, when deposited at specific conditions, to have a nanoindentation hardness up to 7.2 GPa. This high hardness value, comparable to some steels, represents a 3-fold improvement in hardness over “hard gold”, a commonly used electrical contact alloy, while maintaining requisite electrical conductivity. The neural network models provide an avenue to identify expected process windows capable of maximizing material performance.

Electrical contact materials↗

NASA NTRS1994

Non-volatile, solid state bistable electrical switch

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

Williams, Roger M.↗

NASA NTRS2019

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

To understand the limitation of maximizing the switching speed of SiC low current discrete devices and high current power modules in hard switching applications, double pulse tests are conducted and the testing results are analyzed. For power modules, the switching speed is generally limited by the parasitics rather than the gate drive capability. For the discrete SiC device, the conventional voltage source gate drive (VSG) is not sufficient to maximize the switching speed even if the external gate resistance is minimized. The limitation of existing current source gate drives (CSG) are analyzed, and a CSG dedicated for SiC discrete devices is proposed, which can provide constant current during the switching transient regardless of the high Miller voltage and large internal gate resistance. Compared with the conventional VSG, the proposed CSG achieves 67% faster turnon time and 50% turn-off time, and 68% reduction in switching loss at full load condition.

Handong Gui↗

NASA NTRS1968

Semiconductor ac static power switch

Semiconductor ac static power switch has long life and high reliability, contains no moving parts, and operates satisfactorily in severe environments, including high vibration and shock conditions. Due to their resistance to shock and vibration, static switches are used where accidental switching caused by mechanical vibration or shock cannot be tolerated.

Vrancik, J.↗

NASA NTRS2013

ESD Test Apparatus for Soldering Irons

ESDA (Electrostatic Discharge Association) ESD STM 13.1-2000 requires frequent testing of the voltage leakage from the tip of a soldering iron and the resistance from the tip of the soldering iron to the common point ground. Without this test apparatus, the process is time-consuming and requires several wires, alligator clips, or test probes, as well as additional equipment. Soldering iron tips must be tested for electrostatic discharge risks frequently, and this typically takes a lot of time in setup and testing. This device enables the operator to execute the full test in one minute or less. This innovation is a simple apparatus that plugs into a digital multimeter (DMM) and the Common Point Ground (CPG) reference. It enables the user to perform two of the electrostatic discharge tests required in ESD STM 13.1-2000. The device consists of a small black box with two prongs sticking out of one end, two inputs on the opposite end (one of the inputs is used to connect the reference CPG to the DMM), and a metal tab on one side. Inside the box are wires, several washers of various materials, and assembly hardware (nuts and screws/bolts). The device is a passive electronic component that is plugged into a DMM. The operator sets the DMM to read voltage. The operator places the heated tip of the soldering iron onto the metal tab with a small amount of solder to ensure a complete connection. The voltage is read and recorded. The operator switches the DMM to read resistance. The operator places the heated tip of the soldering iron onto the metal tab with a small amount of solder to ensure a complete connection. The resistance is recorded. If the recorded voltage and resistance are below a number stated in ESDA ESD STM 13.1-2000, the test is considered to pass. The device includes all the necessary wiring internal to its body so the operator does not need to do any independent wiring, except for grounding. It uses a stack of high-thermal-resistance washers to minimize the heat transfer from the soldering iron to the wiring used to measure the resistance and voltages. This minimizes thermal error. The device allows very rapid execution of a test that is performed frequently.

Sancho, Jose↗

DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗

DOE OSTI2024

Low‐Volume Cores for Fabrication of Compact, Versatile, and Intelligent Soft Systems

Abstract This study introduces the low‐volume core (LVC) fabrication method, which enables the monolithic molding of compact, complex, versatile, and intelligent soft robotic systems. This method uses thin and flexible thermoplastic sheets to mold internal chambers in soft fluidic actuators, valves, and circuits. The LVC fabrication method creates low‐volume networks in soft actuators (LV‐net actuators) that can be made with compact and complex geometries, enabling both low actuation volume input and multi‐degree‐of‐freedom actuators. LVC fabrication can also be used for compact, completely soft, and monolithic logic components (valves with low‐volume core, also called as LV valves) to provide directional resistance as well as a switching mechanism that enables fluidic logic in soft systems. The compatibility of the fabrication methods for both soft actuators and valves facilitates the creation of compact, integrated, and versatile soft robotic systems with embodied intelligence. This study introduces two examples of such intelligent soft robotic systems that integrate both LV‐net actuators and LV valves to demonstrate capability for complex system fabrication.

Yu, Qifan↗

DOE OSTI2024

Transport signatures of phase fluctuations in superconducting qubits

Abstract Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junctions and identically fabricated capacitively-shunted junctions that show two distinct features normally attributed to small capacitance junctions near zero bias: reduced switching currents and prominent finite resistance associated with phase diffusion in the current–voltage characteristic. Our transport data reveals the existence of phase fluctuations in transmons arising from intrinsic junction capacitance.

Wisne, M. (ORCID:0009000610684209)↗

DOE OSTI2020

Spin Rectification and Electrically Controlled Spin Transport in Molecular-Ferroelectrics-Based Spin Valves

We report a spin-rectification effect in a spin-valve structure consisting of ferroelectric croconic acid (C 5 H 2 O 5 ) sandwiched between ferromagnetic electrodes La 0.7 Sr 0.3 MnO 3 and Co, which can be switched between a high-resistance (off ) and a low-resistance (on) state by a poling voltage. In the off state, the magnetoresistance (MR) sign reverses with the measurement voltage with a 0.1-V offset, suggesting a spin-rectification behavior, while in the on state the MR remains negative. These observations can be understood in terms of electrically controlled interfacial energy-band alignment either from the electrostatic effect or from the interfacial redox process. In conclusion, the observed spin-rectification effect suggests thepossibility of diodelike devices for spin-polarized current.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Comparison of Simulation of Dual-Active Bridge in Different Simulators and Using Different Simulation Methods

The accuracy of states measured from simulation of a dual-active bridge (DAB) converter with an open-loop controller has been used for comparing simulation software and algorithms. The accuracy of the measured states is sensitive to simulation settings and parameters chosen. In this paper, the simulation of the DAB converter with open-loop control is run in the MATLAB/Simscape Electrical, PLECS, and PSCAD software environments, with various simulation settings. The simulation results are also compared with a new simulation algorithm proposed for DAB simulations. Different simulation settings are evaluated, including different solver types, operating conditions, and the on-state resistance values of the MOSFET switches. The simulation results are compared with the theoretical calculations. It is shown that unexpected divergence and DC offset may occur in some cases. This paper provides guidelines to simulate the DAB converter with open-loop control.

Yin, Shiyuan↗

NASA NTRS1971

Dynamic testing of a single-degree-of-freedom strapdown gyroscope

Test methods and results are presented for the equivalent average input rate of a single-degree-of-freedom gyroscope operated both open loop and with a ternary-logic pulse-torque-to-balance loop during multiaxis angular oscillation. For the open-loop tests, good agreement was obtained with theoretical results. Two-axis testing was performed for oscillations about the Input-Output axes, the Input-Spin axes, and the Spin-Output axes. These tests run in the torque-to-balance mode revealed significant departures from open-loop results in the induced drift rate. An analysis is developed explaining much of the closed-loop data presented. Test data for the gryoscope in a ternary torque-to-balance loop with constant input rates is presented. The tests demonstrate that the instrument rate linearity does not change with interrogation frequency from 3,600 to 14,400 Hz if the torque coil is tuned to offer a resistive load to the current switch. Analysis cited shows that gyroscope lag compensation eliminates multiple pulsing and other equivalent forms of degraded resolution in a wide variety of quantizing loops. This result is test verified for the ternary delta-modulator loop.

Lory, C. B.↗

NASA NTRS1980

Detector verifier for circuit analyzers

Economical tool checks operation of automatic circuit analyzer. Each loop is addressed directly from analyzer console by switching internal analyzer bridge to resistance equal that of connecting cable plus specified limiting test value. Procedure verifies whether detected faults in circuit under test are actually due to analyzer malfunction. Standard-length universal test cables make it possible to shift detector tool from cable to cable without resistance compensation.

Pope, D. L.↗

NASA NTRS1977

Air Force nickel-hydrogen experiment

An experiment to obtain some flight experience with a nickel-hydrogen battery in low earth orbit is described. The battery was built to be as compatible with the satellite bus as possible because the satellite bus is used for recharge power. The battery is mounted on an experimental pallet on the satellite. It has its own charge control system, a modification of an existing system that is used for nickel-cadmium, which primarily uses temperature compensated voltage as its criteria. Also, on the pallet is a load bank, a resistive load band, which allows switch to various load regimes. There is some other equipment on the satellite such as the nickel-hydrogen battery to power it. Monitors attached to the 21-cell battery are described.

Harsch, B.↗

NASA NTRS1984

Thermoelectric and Thermionic Conversion Technology

Applied research and technology efforts in thermoelectric and thermionic programs were recommended that will enable space power systems for the nation's future space missions. Specifically it was argued that the effort in thermoelectric materials technology be broadened with the objective of obtaining a material with a Figure of Merit greater than 1.0 x 10(-3)/K for hot junction temperatures of 1100 to 1500 K. The recommended effort in thermionics is to pursue technology programs that will result in an understanding and lifetime prediction methodologies for fuel-emitter and sheath-insulator behavior as a function of operating time and temperature. Also it is recommended that an effort be initiated that combines the thermoelectric, thermionic and power electronic technologies into a program to develop the technology for high temperature, high radiation resistant, and high current electronic switches.

Mondt, J. F.↗

NASA NTRS1990

Memory switches based on metal oxide thin films

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Ramesham, Rajeshuni↗

NASA NTRS1992

High speed magneto-resistive random access memory

A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

Wu, Jiin-Chuan↗