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At least 199 records · Page 11

Bacterial Resistance Toward Antimicrobial Ionic Liquids Mediated by Multidrug Efflux Pumps

The effective elimination of foodborne pathogens through cleaning and disinfection measures is of great importance to the food processing industry. As food producers rely heavily on disinfectants to control pathogenic bacteria in their facilities, the increasing spread of tolerant, often even multidrug resistant, strains is of particular concern. In addition to efforts to prevent or at least reduce development and spread of strains resistant to disinfectants and sanitizers, there is an urgent need for new and effective antimicrobials. One new class of promising antimicrobials is ionic liquids (ILs), which have been reported to be effective against resistant strains as they interact with bacterial cells in multiple ways, but investigations of their effectivity against MDR bacteria or specific defense mechanisms are still limited. This study investigates the role of multidrug efflux pumps of the Resistance Nodulation-Division family (RND) on the resistance of bacterial pathogens Escherichia coli and Salmonella enterica serovar Typhimurium toward 10 antimicrobial active ILs. Results reveal that, while known structure–activity relationships (SARs), such as the side-chain effect, were found for all strains, antimicrobial ILs with one elongated alkyl side chain were significantly affected by the RND efflux pump, highlighting the importance of efflux pumps for future IL toxicity studies. In case of antimicrobial ILs with multiple side chains and different cationic head groups, two ILs were identified that were highly active against all investigated strains with little to no effect of the efflux pump. The results obtained in this study for RND efflux pumps can serve as a starting point for identifying and designing antimicrobial ILs as effective biocides against MDR bacteria.

59 BASIC BIOLOGICAL SCIENCES↗

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.

ENGINEERING,SOLAR ENERGY↗

Zinc‐Imidazolate Films as an All‐Dry Resist Technology

Here, motivated by the drawbacks of solution phase processing, an all‐dry resist formation process is presented that utilizes amorphous zinc‐imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed by novel low temperature (120 °C) gas phase etching using 1,1,1,5,5,5‐hexafluoroacetylacetone (hfacH) to achieve well‐resolved 22 nm lines with a pitch of 30 nm. The effects of electron beam irradiation on the chemical structure and hfacH etch resistance of aZnMIm films are investigated, and it is found that electron irradiation degrades the 2‐methylimidazolate ligands and transforms aZnMIm into a more dense material that is resistant to etching by hfacH and has a C:N:Zn ratio effectively identical to that of unmodified aZnMIm. These findings showcase the potential for aZnMIm films to function in a dry resist technology. Sensitivity, contrast, and critical dimensions of the patterns are determined to be 37 mC cm −2 , 0.87, and 29 nm, respectively, for aZnMIm deposited on silicon substrates and patterned at 30 keV. This work introduces a new direction for solvent‐free resist processing, offering the prospect of scalable, high‐resolution patterning techniques for advanced semiconductor fabrication processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Engineering of Grain Boundaries in CeO 2 Enabling Tailorable Resistive Switching Properties

Abstract Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain boundaries. In this work, the impact of engineering large numbers of grain boundaries on resistive switching mechanisms and performances is investigated. Three different grain morphologies, that is, “random network,” “columnar scaffold,” and “island‐like,” are realized in CeO 2 thin films. The devices with the three grain morphologies demonstrate vastly different resistive switching behaviors. The best overall resistive switching performance is shown in the devices with “columnar scaffold” morphology, where the vertical grain boundaries extending through the film facilitate the generation of oxygen vacancies as well as their migration under external bias. The observation of both interfacial and filamentary switching modes only in the devices with a “columnar scaffold” morphology further confirms the contribution from grain boundaries. In contrast, the “random network” or “island‐like” structures result in excessive or insufficient oxygen vacancy concentration migration paths. The research provides design guidelines for grain boundary engineering of oxide‐based resistive switching materials to tune the resistive switching performances for memory and neuromorphic computing applications.

36 MATERIALS SCIENCE↗

Embolism resistance explains mortality and recovery of five subtropical evergreen broadleaf trees to persistent drought

Subtropical evergreen broadleaf forest (SEBF) is experiencing and expected to suffer more frequent and severe drought events. However, how the hydraulic traits directly link to the mortality and recovery of SEBF trees remains unclear. In this study, we conducted a drought-rewatering experiment on tree seedlings of five dominant species to investigate how the hydraulic traits were related to tree mortality and the resistance and recovery of photosynthesis (A) and transpiration (E) under different drought severities. Species with greater embolism resistance (P 50 ) survived longer than those with the weaker P 50 . However, there was no general hydraulic threshold associated with tree mortality, with the lethal hydraulic failure varying from 64% to 93% loss of conductance. Further, the photosynthesis and transpiration of tree species with greater P 50 were more resistant to and recovered faster from drought than those with lower P 50 . Other plant traits could not explain the interspecific variation in tree mortality and drought resistance and recovery. These results highlight the unique importance of embolism resistance in driving carbon and water process under persistent drought across different trees in SEBF. The absence of multiple efficient drought strategies in SEBF seedlings implies the difficulty of natural seedling regeneration under future droughts, which often occurs after destructive disturbances (e.g., extreme drought events and typhoon), suggesting that this biome may be highly vulnerable to co-occurring climate extremes.

54 ENVIRONMENTAL SCIENCES↗

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

Abstract Recently, the significant improvements in the surface and contact passivation of silicon (Si) solar cells as well as their bulk quality have shifted their operating point to higher injections. Hence, they are less dependent on wafer doping. This shift opens an opportunity of using high‐resistivity wafers for practical photovoltaic applications, introducing a promising approach to push the cell efficiency towards the intrinsic limit and to improve the module reliability by increasing the cell breakdown voltage. Therefore, insights into the performance of Si solar cells using high‐resistivity wafers at various operating temperatures are of significant interest. In this study, we investigate the temperature‐ and illumination‐dependent performance of Si heterojunction (SHJ) solar cells using a wide range of wafer resistivities (between 3 and 1000 Ω⋅cm). Although a reduction in the passivation quality of the passivating contacts is observed at elevated temperature, the impact on the temperature coefficient of the open‐circuit voltage (TC V oc )—the dominant contributor to the temperature coefficient (TC) of the cell efficiency—is very limited. Their TC V oc are still dominated by the temperature dependence of the effective intrinsic carrier concentration. Furthermore, we also find that the investigated cells are more sensitive to temperature variation at lower illumination intensities. It is noteworthy that the efficiency of the cells fabricated using high‐resistivity wafers is comparable to that of the reference cells at any given temperature, highlighting the potential of using high‐resistivity wafers for solar cells.

14 SOLAR ENERGY↗

Quantifying the resistance to dislocation glide in single phase FeCrAl alloy

The resistance to dislocation glide associated with slip systems {110}<111> and {112}<111> in single phase FeCrAl alloy is measured via micromechanical testing in a scanning electronic microscopy at room temperature. Two important factors, the shape and orientation of a pillar, are discussed with respect to the glide resistance and stress-strain response. Maximizing Schmid factor of one specific slip system while minimizing others is recommended in order to diminish obvious dislocations-induced hardening during in-situ testing. Apparent Schmid factor analysis is conducted to select grains with preferred orientations. Two types of pillars with conventional cylindrical shape or dog-bone shape are tested under compression to estimate the resistance to dislocation glide and evaluate the effect of pillar shape on the compression stress-strain response. One dog-bone pillar is tested under tension to check the tension-compression isotropy of dislocation slip. We discover that the shape of a pillar to a smaller extent affects the measured resistance but strongly influences the stress strain response. Cylindrical pillars exhibit apparent hardening associated with early yielding due to stress or strain concentration at contact region, while dog-bone pillars show an obvious yielding and continuous shearing without hardening. The resistance is 220 MPa for slip system {110}<111> and 230 MPa for slip system {112}<111>. Finite element analysis is performed to account for the influence of pillar shape and contact condition on mechanical response.

36 MATERIALS SCIENCE↗

Anisotropic magneto-resistivity and magnetocaloric effect in DyAl 2

Here, in this study, we experimentally and theoretically investigate the correlation between the anisotropic magnetic resistivity and magnetocaloric effect in DyAl 2 single crystals. DyAl 2 crystallizes in the C15 Laves phase structure with cubic symmetry. While some earlier studies revealed that the isothermal entropy change in dialuminides follows a similar trend as the electrical resistivity change as a function of temperature and magnetic field, the correlation between anisotropic behavior of these two physical parameters is yet to be explored to the best of our knowledge. To address this gap, we measured electrical resistivity of DyAl 2 single crystals along two different directions in zero and applied magnetic fields and compared the experimental results with our theoretical model. For the theoretical analysis, we employed a model Hamiltonian in the mean-field approximation, considering the exchange interaction, Zeeman effect, and crystalline electric field associated with the cubic symmetry. Our findings reveal a significant dependence of DyAl 2 resistivity on the direction of the applied magnetic field, in agreement with our theoretical results. These outcomes emphasize the interplay between magnetocaloric effect and magneto-resistivity, underscoring the potential of the magnetocaloric effect as a valuable tool for gaining deeper insights into basic physical properties including electron transport behavior.

36 MATERIALS SCIENCE↗

Recycled polyethylene and crumb rubber composites modified asphalt with improved aging resistance and thermal stability

Crumb rubbers (CR) and recycled Polyethylene (PE) are commonly used as modifiers to improve the asphalt properties. However, the addition of these modifiers individually may result in phase separation of PE and inadequate degradation of CR, which may not simultaneously satisfy the rheological and aging resistance of the binder blends. In this study, a type of CR/PE composites manufactured through melt extrusion procedures was adopted for the improvement of the modified binder blends. The modified binder blends after short-term (RTFO) and long-term (PAV) aging were collected for dynamic shear rheometer and bending beam rheometer tests. FTIR tests were also used to quantify the aging resistance, while differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA) were applied to evaluate the thermal behaviors of the binder blends. Optical microscopy tests were used to explore the modification mechanism and visualize the microstructures of original and PAV aged binder blends. Test results showed that CR/PE composites could significantly improve the aging resistance of the binder blends. The dispersed PE particles still interacted with each other and meanwhile worked with the diffused rubbery phase, which could form a similar TPEs network. The oxidation and high-temperature aging of such binder blends would strengthen the network that resisted the aging severity of the binder blends. Furthermore, it was also revealed that CR/PE modified asphalt could sustain more heat before a rapid degradation and the well-dispersed PE particles could interact with the diffused CR particles to form a network to resist aging.

02 PETROLEUM↗

Hydrogen effects on thermal diffusivity and electrical resistivity of zircaloy cladding

Thermal diffusivity measurements on Zirconium-based cladding materials have historically been a challenge due to the difficulty to measure on specimens with curved geometries, including nuclear grade Zircaloy cladding materials. Here, in this work, we first used laser flash analysis method and four-probe configuration method to measure the thermal diffusivity and electrical resistivity of Zircaloy tubes respectively, which show good agreement with Zircaloy plates in this work, as well as previously published data. The consistent results proved the applicability of the laser flash analysis setup and four-probe configuration method for investigating thermal diffusivity and electrical resistivity of Zircaloy tubes. We further investigated the hydrogen effect on thermal diffusivity and electrical resistivity of Zircaloy. Hydrogen plays significant roles in the thermal diffusivity of Zircaloy, which depends on the hydrogen concentration. For higher hydrogen contents (1130 and 1820 wppm in this work), where phase transformation (α-Zr + δ-hydride → α-Zr + β-Zr) occurs at 567 °C, thermal diffusivity decreases as a function of temperature at the α-Zr + δ-hydride phase regime, while increase at higher temperature at the α-Zr + β-Zr phase regime. For low hydrogen concentration, where hydride dissolved into α-Zr matrix phase at higher temperature, the thermal diffusivity is lower than non-hydrided Zircaloy-4 with similar temperature-dependent trends. Such observation demonstrates the hydrogen effects on reducing thermal diffusivity of α-Zr phase. Hydrogen increases the electrical resistivity of Zircaloy. Similar to thermal diffusivity results, the phase transformation causes a reversal of temperature-dependent trends in electrical resistivity results in Zircaloy-4 with higher hydrogen contents.

36 MATERIALS SCIENCE↗

Structural Analysis of 23S rRNA Methylating Enzyme Cfr Reveals RNA-Binding Determinants for Methylation Regiospecificity and Antibiotic Resistance

The 23S rRNA methylating enzyme Cfr, found in pathogens including Staphylococcus aureus, Clostridium difficile, Escherichia coli, and Klebsiella pneumoniae, confers resistance to phenicols, lincosamides, oxazolidinones (including linezolid), pleuromutilins, and streptogramins A (the PhLOPS A phenotype). Cfr catalyzes methylation of the C8 position of the A2503 base in 23S rRNA, the recognition site of the above antibiotic classes. Along with the RlmN housekeeping enzyme, Cfr can also promote methylation of the C2 position of the same base. The molecular and structural basis of Cfr’s dual substrate specificity is not known, which hinders our ability to design Cfr-targeting inhibitors necessary to curb PhLOPS A resistance. Here, we present the first crystal structure of Cfr and a detailed analysis of its possible interactions with rRNA. Using structure-guided mutagenesis, mass spectrometry analysis of in cellulo 23S rRNA methylated species, and in cellulo resistance studies, we identify the key amino acids essential for Cfr methylation and multidrug resistance activity. In particular, we found that Cfr’s Q329 residue is important for C8- specific methylation. These data provide a framework for further studies of the biochemistry, structure, and inhibition of this important resistance determinant.

AlphaFold↗

Resistive hose modes in tokamak runaway electron beams

Beams of energetic runaway electrons are generated during disruptions in tokamaks, and fluid models are used to study their effects on macroscale dynamics. Linear computations of a massless, runaway electron beam coupled to MHD plasma show that resistive hose instabilities grow faster than tearing modes at large resistivity. Eigenvalue results with reduced models of the resistive hose instability are compared with results from the full MHD and beam system, showing that the resistive hose decouples from any plasma response. An estimate of plasma temperature at which growth of the resistive hose dominates tearing for post-disruption DIII-D plasma parameters is in a physically relevant regime.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Resistive wall tearing mode disruptions

Abstract This paper deals with resistive wall tearing mode (RWTM) disruptions. RWTMs are closely related to resistive wall modes. RWTMs are tearing modes whose linear and nonlinear behavior is strongly dependent on the resistive wall outside the plasma. The consequence for ITER, is that the thermal quench timescale could be much longer than previously conjectured. Active feedback stabilization is another possible way to mitigate or prevent RWTM disruptions. Simulations of RWTM disruptions are reviewed for DIII-D and MST. MST has a longer resistive wall time than ITER, and disruptions are not observed experimentally when MST is operated as a standard tokamak. Simulations indicate that the RWTM disruption time scale is longer than the experimental shot time. Edge cooling causes contraction of the current profile, which can destabilize RWTMs. The equilibria studied here have the q = 2 rational surface close to the edge of the plasma, and low current density between the q = 2 surface and the wall. A sequence of low edge current model equilibria has major disruptions only for a resistive, not ideal, wall, and edge q ⩽ 3.4 . This is consistent with regimes of tokamak disruptivity, suggesting that tokamak disruptions caused by edge cooling at low edge q could be RWTMs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Giant resistance switch in twisted transition metal dichalcogenide tunnel junctions

Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here, in this work, we predict an extremely large resistance switching based on the relative spin–orbit splitting in twisted transition metal dichalcogenide (TMD) monolayers tunnel junctions. Because of the valence band spin splitting which depends on the valley index in the Brillouin zone, the perpendicular electronic transport through the junction depends on the relative reciprocal space overlap of the spin-dependent Fermi surfaces of both layers, which can be tuned by twisting one layer. Our quantum transport calculations reveal a switching resistance larger than 10 6 % when the relative alignment of TMDs goes from 0° to 60° and when the angle is kept fixed at 60° and the Fermi level is varied. By creating vacancies, we evaluate how inter-valley scattering affects the efficiency and find that the resistance switching remains large (10 4 %) for typical values of vacancy concentration. Not only should this resistance switching be observed at room temperature due to the large spin splitting, but our results also show how twist angle engineering and control of van der Waals heterostructures could be used for next-generation memory and electronic applications.

36 MATERIALS SCIENCE↗

Operation and Control of a PV Converter with Enhanced Stability Based on Virtual Impedance Emulation in a Pseudo Resistive Grid

A three-phase grid-connected photo-voltaic converter is investigated to enhance its operational capabilities and stability margins. These converters are generally connected to the grid with an inductive impedance. In this paper the possibility of using a resistive impedance to enhance the stability of the overall system has been investigated. To reduce the losses in the system, rather than using a real resistance, a virtual resistance is emulated inside the control architecture to ensure resistive power transfer between two sources. The stability results with inductive and resistive grids are presented based on the previously reported frequency response. The overall system is modeled via MATLAB/Simulink and several important case study results are presented in this paper to verify the efficacy of the proposed architecture.

grid-forming controls↗

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗

Distributed Fiber Optic Sensing to Identify Locations of Resistive Transitions in REBCO Conductors and Magnets

High-temperature superconductors such as REBa 2 Cu 3 O 7-x (REBCO, RE = rare earth) can generate strong magnetic fields that are promising for applications in particle accelerators and compact fusion reactors. Traditionally, voltage taps are installed in superconducting magnets to measure the voltage signals due to resistive transitions. The voltage-tap-based diagnostics is important for the development of magnet technology as it can help pinpoint the locations in the magnet windings that limit the magnet performance. The architecture of the multi-tape REBCO cable such as CORC wires, however, makes it difficult to apply the voltage-tap-based diagnostics to identify the locations of resistive transitions. Distributed fiber optic sensing (DFOS) has the potential to address this issue. In this paper, we report the measurements of thermal strain along a CORC wire based on optical frequency domain reflectometry with a maximum spatial resolution of 0.65 mm and a temporal resolution of 10 Hz. The optical fiber is co-wound with the CORC wire that is epoxy impregnated. During the test, current was increased until a resistive transition occurred in the conductor. The spectrum shift of the reflected light along the fiber was recorded. The results suggested that with proper thermal isolation from the cryogen, DFOS can be used to identify the locations of resistive transitions in CORC wires and magnets. In conclusion, the results will allow a better understanding of the causes of resistive transitions in REBCO conductors and magnets, which will help improve the REBCO magnet technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Computationally Efficient AC Resistance Model for Stator Winding With Rectangular Conductors

The resistance of the electric machine’s windings is an important parameter when analyzing the machine’s performance, as conduction losses in the winding are often the largest loss component. However, this resistance changes with frequency due to the skin and proximity effects, making it challenging to accurately estimate these losses. In this article, a computationally efficient, general method of calculating the ac resistance of an electric machine winding with rectangular conductors is presented. The method uses a 1-D magnetoquasi-static model of the stator slot region to develop boundary transfer relations between individual turns. These relations are then used to create an impedance matrix from which the ac resistance can be calculated. This technique is more flexible than previous solutions since it can accommodate different winding configurations such as fractional-pitch windings. It is shown that a fractional-pitch winding has a lower ac resistance than a full-pitch winding. Finally, finite-element analysis simulations and experimental results are used to validate the proposed method.

42 ENGINEERING↗