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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

The ZnO p-n homojunctions modulated by ZnMgO barriers

In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 10{sup 3} cm{sup 2}V {sup −1}s{sup −1} based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Monolayer MoS{sub 2} self-switching diodes

This paper presents a new molybdenum disulphide (MoS{sub 2}) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS{sub 2} monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS{sub 2} results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

All-electrical detection of spin dynamics in magnetic antidot lattices by the inverse spin Hall effect

The understanding of spin dynamics in laterally confined structures on sub-micron length scales has become a significant aspect of the development of novel magnetic storage technologies. Numerous ferromagnetic resonance measurements, optical characterization by Kerr microscopy and Brillouin light scattering spectroscopy and x-ray studies were carried out to detect the dynamics in patterned magnetic antidot lattices. Here, we investigate Oersted-field driven spin dynamics in rectangular Ni80Fe20/Pt antidot lattices with different lattice parameters by electrical means. When the system is driven to resonance, a dc voltage across the length of the sample is detected that changes its sign upon field reversal, which is in agreement with a rectification mechanism based on the inverse spin Hall effect. Furthermore, we show that the voltage output scales linearly with the applied microwave drive in the investigated range of powers. Lastly, our findings have direct implications on the development of engineered magnonics applications and devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2016

Investigations on rectifying behavior of Y{sub 0.95}Ca{sub 0.05}MnO{sub 3}/Si junction

In this communication, we report the rectifying properties observed across the junction, consists of Ca{sup +2} doped hexagonal YMnO{sub 3} manganite film, grown on n-type (100) Si single crystalline substrate. The junction was grown using cost effective chemical solution deposition (CSD) technique by employing spin coating method. Surface morphology of Y{sub 0.9}5Ca{sub 0.05}MnO{sub 3}/Si (YCMO/Si) film was carried out by atomic force microscopy and magnetic response of film was studied by magnetic force microscopy. Current – voltage characteristics of the junction was carried out by using Keithley source meter in current perpendicular to plane (CPP) mode at different temperatures. Rectification in I – V behavior has been observed for the junction at all the temperatures studied. With increase in temperature, rectification ratio, in the range of 10{sup 4}, increases across the junction. Results have been discussed in the context of thermal effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

The current-voltage characteristics and metastability in GaN p++/n++ homojunction tunnel diodes and n++/p++/i/n tunnel-contacted diodes grown via metal modulated epitaxy have been reported on. The room temperature negative differential resistance (NDR) beginning at ~1.35 V is discussed for GaN homojunction devices grown on sapphire. The NDR vanishes, and the conductivity increases as multiple I-V sweeps are performed, thus implying that charge trapping states with long trap lifetimes exist at defect sites, and these traps play a crucial role in the tunneling mechanism. Additionally, the use of extremely high n-type (N D ~ 4.6×10 20 cm –3 ) and p-type (N A ~ 7.7×10 20 cm –3 ) doping results in a near linear characteristic with minimal rectification at current densities less than 200 A/cm 2 and soft rectification above this current density. Forward-bias tunneling and NDR are still present at 77 K. The highest silicon-doped n++/p++/i/n tunnel-contacted pin diode demonstrates a turn-on voltage of 3.12 V, only 0.14 V higher than that of the pin control diode, and an improved specific on-resistance of 3.24 ×10 –4 Ω cm 2 , which is 13% lower than that of the control pin diode.

42 ENGINEERING↗
DOE OSTI2020

Recent progress in microscale modeling of RF sheaths

The microscale properties of RF sheaths in the ion cyclotron range of frequencies (ICRF) are investigated by means of analytical theory, nonlinear fluid and particle-in-cell (PIC) code modeling. Previous work that parametrized RF sheath properties, specifically the RF sheath impedance and the rectified (DC) sheath potential, is generalized to include the effect of net DC current flow through the sheath. Analytical results are presented in the low frequency limit where the displacement current is negligible, and tested against results from a fluid numerical model. Here, it is shown that when the sheath draws DC electron current, the voltage rectification is reduced from the zero current case, and the electron admittance is increased. In separate but related work on the microscale model, selected cases have been simulated with PIC codes to validate, further illuminate and extend fluid model results and their parametrizations. Quantitative agreement in trends for voltage rectification and sheath admittance vs. RF driving voltage is found.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation

In this Letter, we unveil the high-temperature limits of N-polar GaN Schottky contacts enhanced by a low-pressure chemical vapor deposited (LPCVD) SiN interlayer. Compared to conventional Schottky diodes, the insertion of a 5 nm SiN lossy dielectric interlayer in-between Ni and N-polar GaN increases the turn-on voltage (V ON ) from 0.4 to 0.9 V and the barrier height ($\phi_B$) from 0.4 to 0.8 eV. This modification also reduces the leakage current at zero bias significantly: at room temperature, the leakage current in the conventional Schottky diode is >103 larger than that observed in the device with the SiN interlayer, while at 200 °C, this ratio increases to 105. Thus, the rectification ratio (ION/IOFF) at ±1.5 V reduces to less than one at 250 °C for the conventional Schottky diode, whereas for SiN-coated diodes, rectification continues until 500 °C. The I–V characteristics of the diode with an SiN interlayer can be recovered after exposure to 400 °C or lower. Contact degradation occurs at 500 °C, although devices are not destroyed yet. Here, we report N-polar GaN Schottky contact operation up to 500 °C using an LPCVD SiN interlayer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Frictional drag between superconducting LaAlO 3 /SrTiO 3 nanowires

Here we report frictional drag measurements between two superconducting LaAlO 3 /SrTiO 3 nanowires. In these experiments, current passing through one nanowire induces a voltage across a nearby electrically isolated nanowire. The frictional drag signal contains both symmetric and anti-symmetric components. The anti-symmetric component arises from the rectification of quantum shot noise in the drive nanowire by the broken symmetry in the drag nanowire. The symmetric component in the drag resistance is ascribed to rectification of thermal noise in the drive nanowire during superconducting-normal transition. The suppression of the symmetric component is observed when a normal nanowire is used as either a drag or drive nanowire with the other nanowire superconducting. The absence of symmetric drag resistance between a normal drag nanowire and a superconducting drive nanowire suggests a higher electron-hole asymmetry in the superconducting LaAlO 3 /SrTiO 3 nanowire arising from the 1D nature of superconductivity at LaAlO 3 /SrTiO 3 interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Magneto-opto-phononic inverse Faraday effect

Nonlinear frequency conversion processes, such as optical rectification, difference-frequency generation, and sum-frequency generation, are fundamental for producing electromagnetic radiation at diverse frequencies. In this work, we demonstrate that coherently excited infrared-active phonons can act as transducers for generating nonlinear magnetizations through phonon-magnon interactions, analogous to nonlinear optical frequency conversion. We derive analytical solutions for the time-dependent magnetizations arising from the second-order response to the electric field component of an ultrashort laser pulse. These solutions enable us to define second-order nonlinear magneto-electric susceptibilities, which describe rectification, impulsive excitation, and sum-frequency excitation of coherent magnons. Our theoretical framework naturally incorporates the conventional magneto-optic and phonon inverse Faraday effects and predicts a hybrid magneto-opto-phononic inverse Faraday effect involving photon-phonon-magnon scattering. This work highlights nonlinear phononics as a pathway for controlling magnetization in solids.

Landau-Lifschitz-Gilbert equation↗
DOE OSTI2015

Excitation of plasmonic terahertz photovoltaic effects in a periodic two-dimensional electron system by the attenuated total reflection method

The problem of the rectification of terahertz radiation due to plasmonic nonlinearities in a periodic two-dimensional electron system upon the excitation of plasma oscillations by the attenuated total reflection method is solved. This model allows the independent study of different plasmonic rectification mechanisms, i.e., plasmonic electron drag and plasmonic ratchet effects.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Galaxy–Galaxy Weak-lensing Measurements from SDSS. I. Image Processing and Lensing Signals

We present our image processing pipeline that corrects the systematics introduced by the point-spread function (PSF). Using this pipeline, we processed Sloan Digital Sky Survey (SDSS) DR7 imaging data in r band and generated a galaxy catalog containing the shape information. Based on our shape measurements of the galaxy images from SDSS DR7, we extract the galaxy–galaxy (GG) lensing signals around foreground spectroscopic galaxies binned in different luminosities and stellar masses. We estimated the systematics, e.g., selection bias, PSF reconstruction bias, PSF dilution bias, shear responsivity bias, and noise rectification bias, which in total is between −9.1% and 20.8% at 2 σ levels. The overall GG lensing signals we measured are in good agreement with Mandelbaum et al. The reduced χ {sup 2} between the two measurements in different luminosity bins are from 0.43 to 0.83. Larger reduced χ {sup 2} from 0.60 to 1.87 are seen for different stellar mass bins, which is mainly caused by the different stellar mass estimator. The results in this paper with higher signal-to-noise ratio are due to the larger survey area than SDSS DR4, confirming that more luminous/massive galaxies bear stronger GG lensing signals. We divide the foreground galaxies into red/blue and star-forming/quenched subsamples and measure their GG lensing signals. We find that, at a specific stellar mass/luminosity, the red/quenched galaxies have stronger GG lensing signals than their counterparts, especially at large radii. These GG lensing signals can be used to probe the galaxy–halo mass relations and their environmental dependences in the halo occupation or conditional luminosity function framework.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

Ionic transport in electrostatic Janus Membranes. An explicit solvent molecular dynamic simulation.

Janus –or two-sided, charged membranes offer promise as ionic current rectifiers. In such systems, pores consisting of two regions of opposite charge can be used to generate a current from a gradient in salinity. The efficiency of nanoscale Janus pores increases dramatically as their diameter becomes smaller. However, little is known about the underlying transport processes, particularly under experimentally accessible conditions. In this work, we examine the molecular basis for rectification in Janus nanopores using an applied electric field. Molecular simulations with explicit water and ions are used to examine the structure and dynamics of all molecular species in aqueous electrolyte solutions. For several macroscopic observables, the results of such simulations are consistent with experimental observations on asymmetric membranes. Our analysis reveals a number of previously unknown features, including a pronounced local re-orientation of water molecules in the pores, and a segregation of ionic species that has not been anticipated by previously reported continuum analyses of Janus pores. Using these insights, a model is proposed for ionic current rectification in which electric leakage at pore entrance controls net transport.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1976

Experimental study of digital image processing techniques for LANDSAT data

The author has identified the following significant results. Results are reported for: (1) subscene registration, (2) full scene rectification and registration, (3) resampling techniques, (4) and ground control point (GCP) extraction. Subscenes (354 pixels x 234 lines) were registered to approximately 1/4 pixel accuracy and evaluated by change detection imagery for three cases: (1) bulk data registration, (2) precision correction of a reference subscene using GCP data, and (3) independently precision processed subscenes. Full scene rectification and registration results were evaluated by using a correlation technique to measure registration errors of 0.3 pixel rms thoughout the full scene. Resampling evaluations of nearest neighbor and TRW cubic convolution processed data included change detection imagery and feature classification. Resampled data were also evaluated for an MSS scene containing specular solar reflections.

Rifman, S. S.↗
NASA NTRS1977

Nonlinear optical response of metal-barrier-metal junctions

The optical response of metal-barrier-metal (MBM) junctions is discussed, with emphasis on the nonlinearity of response associated with reversal of polarity as optical intensity is increased. This nonlinear behavior can be used to measure correlation functions of optical pulses or to generate ultrashort electrical pulses. Expressions for the current flowing through the insulating barrier (junction), and for the rectification current, are given. Pulse signal and polarity of the electrical pulse evolves as the junction bias is varied about the null-signal bias. The apparatus used to obtain rectification pulse signals is described; the calculated evolution of the rectified pulse shape is found to correspond to that of pulse signals obtained experimentally. The generation of pulses six orders of magnitude smaller than a previously-obtained instrument-limited 1.6 nanosecond pulse has been observed.

Fan, B.↗
NASA NTRS1976

Stereo mapping with the Viking Lander camera imagery

Stereomapping techniques applicable to the processing of imagery from facsimile cameras on board the Viking Mars landing vehicles are discussed. Two methods of stereomapping are considered: use of a gnomonic projection to transform the digital imagery to an equivalent of a perspective projection by computerized rectification through image processing; and interfacing a high-speed digital computer to an analytical plotter so that rectification and corrections proceed in real time. Contour maps produced during tests of the Viking Lander cameras, as well as maps of the area surrounding the Viking Lander on the Martian surface, are presented.

Wu, S. S. C.↗
NASA NTRS1981

Analogue implementation of analytic signal processing for pulse-echo systems

An alternative to rectification is proposed for detection of an ultrasonic signal. This method is especially useful in medical and non-destructive evaluation (nde) applications. With this method, the magnitude of the complex analytic signal is used to define the envelope of the ultrasonic waveform. The square of this quantity has been shown elsewhere to be equal to the true rate-of-arrival of energy. An earlier study, using digital data processing, has already demonstrated the superior resolvability of closely spaced interfaces obtained with the analytic signal magnitude, as compared to conventional rectification. Here, an analogue implementation is presented which utilizes single-sideband techniques to obtain both quadrature components of the analytic signal and its magnitude. A conventional transducer, pulser, and receiver are used.

Gammell, P. M.↗
NASA NTRS1984

Cartographic accuracy of Landsat-4 MSS and TM image data

Investigations of the cartographic quality of Landsat-4 MSS and TM image data in CCT-p formats have produced rectification accuracies (rmse/xy/ values) of + or - 2/3 to + or - 1 data pixel for both whole and subscene areas using polynomials of the first through third degree. In order to achieve these accuracies with MSS data, 15 or more Ground Control Points (GCPs) are required, whereas with the TM data sets as few as 5-10 GCPs will suffice. Factors which limit the cartographic rectification accuracies of the Landsat-4 data include: (1) spatial resolution of the data; (2) map and digitizing errors; and (3) terrain relief. Of these factors, data resolution is the most significant, limiting the location of GCPs to about + or - 0.5 pixel. Horizontal displacements due to terrain relief can be minimized by selecting GCPs at or near midrange elevations. Overall, the representative rmse(xy) values of + or - 25 and + or - 55 m for TM and MSS data sets are within U.S. National Map Accuracy Standards for cartographic products of 1:100,000 and 1:200,000 scale, respectively.

Welch, R.↗