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Results for “Photocurrent”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2010

Correlation between charge transfer exciton recombination and photocurrent in polymer/fullerene solar cells

We correlate carrier recombination via charge transfer excitons (CTEs) with the short circuit current, J{sub sc}, in polymer/fullerene solar cells. Near infrared photoluminescence spectroscopy of CTE in three blends differing for the fullerene acceptor, gives unique insights into solar cell characteristics. The energetic position of the CTE is directly correlated with the open-circuit voltage, V{sub oc}, and more important J{sub sc} decreases with increasing CTE emission intensity. CTE emission intensity is discussed from the perspective of blend morphology. The work points out the fundamental role of CTE recombination and how optical spectroscopy can be used to derive information on solar cell performances.

36 MATERIALS SCIENCE↗
DOE OSTI2014

On plasmon-induced photocurrent and doping of metal-patterned graphene

Patterning graphene with noble metal plasmonic nanostructures to enhance and to manipulate the optical and electronic properties of graphene promises a variety of technological innovations in the field of nano-optoelectronics. In this report, we briefly revisit photoconduction experiments done recently on graphene plasmonic sensors and show that the excess electrical current generated in response to spatially non-uniform optical excitation is primarily induced by a photo-thermo-electric effect in the graphene itself. As this mechanism has nothing to do with the excess free carrier generation common with conventional semiconductors, the plasmonic nanostructures cannot be utilized to regulate the free carrier density and doping of graphene, in contrast to what has been proposed recently.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Shift photovoltaic current and magnetically induced bulk photocurrent in piezoelectric sillenite crystals

Recently, it has been shown how shift and ballistic currents in piezoelectric sillenite crystals Bi 12 GeO 20 and Bi 12 SiO 20 can be separated experimentally under the assumption that the shift component of the circular current is small. However, it has been claimed that the shift and ballistic currents cannot be quantified by this method, due to the magnetophotovoltaic effect caused either by the change of the crystal's spatial symmetry in the magnetic field or by the breaking of time-reversal symmetry. Presently, we report observations of photovoltaic currents in Bi 12 SiO 20 , excited by linearly and circularly polarized light under weak external magnetic field, as well as measurements of the corresponding photo-Hall signals. Further, we demonstrate that the magnetophotovoltaic current constitutes a significant fraction of the measured current in the Hall direction for Bi 12 SiO 20 under specific experimental conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

Poly-Si/SiO 2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm 2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

14 SOLAR ENERGY↗
DOE OSTI2018

Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation

The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.

61 RADIATION PROTECTION AND DOSIMETRY↗