Proximity-effect-induced Superconducting Gap in Topological Surface States – A Point Contact Spectroscopy Study of NbSe 2 /Bi 2 Se 3 Superconductor-Topological Insulator Heterostructures
Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi 2 Se 3 thin films grown on superconducting NbSe 2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40 mK. An induced superconducting gap in Bi 2 Se 3 was observed in the spectra, which decreased with increasing Bi 2 Se 3 layer thickness, consistent with the proximity effect in the bulk states of Bi 2 Se 3 induced by NbSe 2 . At very low temperatures, an extra point contact feature which may correspond to a second energy gap appeared in the spectrum. For a 16 quintuple layer Bi 2 Se 3 on NbSe 2 sample, the bulk state gap value near the top surface is ~159 μeV, while the second gap value is ~120 μeV at 40 mK. The second gap value decreased with increasing Bi 2 Se 3 layer thickness, but the ratio between the second gap and the bulk state gap remained about the same for different Bi 2 Se 3 thicknesses. It is plausible that this is due to superconductivity in Bi 2 Se 3 topological surface states induced through the bulk states. In conclusion, the two induced gaps in the PCS measurement are consistent with the three-dimensional bulk state and the two-dimensional surface state superconducting gaps observed in the angle-resolved photoemission spectroscopy (ARPES) measurement.