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Results for “Optical switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Spatio-temporal patterning of extensile active stresses in microtubule-based active fluids

Abstract Microtubule-based active fluids exhibit turbulent-like autonomous flows, which are driven by the molecular motor powered motion of filamentous constituents. Controlling active stresses in space and time is an essential prerequisite for controlling the intrinsically chaotic dynamics of extensile active fluids. We design single-headed kinesin molecular motors that exhibit optically enhanced clustering and thus enable precise and repeatable spatial and temporal control of extensile active stresses. Such motors enable rapid, reversible switching between flowing and quiescent states. In turn, spatio-temporal patterning of the active stress controls the evolution of the ubiquitous bend instability of extensile active fluids and determines its critical length dependence. Combining optically controlled clusters with conventional kinesin motors enables one-time switching from contractile to extensile active stresses. These results open a path towards real-time control of the autonomous flows generated by active fluids.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Surface plasmon enhanced fast electron emission from metallised fibre optic nanotips

Physical mechanisms of electron emission from fibre optic nanotips, namely, tunnelling, multi-photon, and thermionic emission, either prevent fast switching or require intense laser fields. Time-resolved electron emission from nano-sized sources finds applications ranging from material characterisation to fundamental studies of quantum coherence. We present a nano-sized electron source capable of fast-switching (≤1 ns) that can be driven with low-power femtosecond lasers. The physical mechanism that can explain emission at low laser power is surface plasmon enhanced above-threshold photoemission. An electron emission peak is observed and provides support for resonant plasmonic excitation. The electron source is a metal-coated optical fibre tapered into a nano-sized tip. The fibre is flexible and back illuminated facilitating ease of positioning. The source operates with a few nJ per laser pulse, making this a versatile emitter that enables nanometrology, multisource electron-lithography and scanning probe microscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Dynamically tunable second-harmonic generation using hybrid nanostructures incorporating phase-change chalcogenides

Nonlinear metasurfaces with high conversion efficiencies have been vastly investigated. However, strong dynamic tunability of such devices is limited in conventional passive plasmonic and dielectric material platforms. Germanium antimony telluride (GST) is a promising phase-change chalcogenide for the reconfiguration of metamaterials due to strong nonvolatile changes of the real and imaginary parts of the refraction index through amorphous-crystalline phase change. The orderly structured GST has an even higher potential in tunable second-harmonic generation (SHG) with a non-centrosymmetric crystal structure at the crystalline phase, while the amorphous phase of GST does not exhibit bulk second-order nonlinearity. Here, we experimentally demonstrate SHG switches by actively controlling the crystalline phase of GST for a GST-based hybrid metasurface featuring a gap-surface plasmon resonance, and a quarter-wave asymmetric Fabry–Perot (F–P) cavity incorporating GST. We obtain SHG switches with modulation depths as high as ~ 20 dB for the wavelengths at the on-state resonance. We also demonstrate the feasibility of multi-level SHG modulation by leveraging three controlled GST phases, i.e., amorphous, semi-crystalline, and crystalline, for the gap-surface plasmon hybrid device, which features stronger light–matter interaction and has higher resonant SHG efficiencies than the asymmetric F–P cavity device at respective GST phases. This research reveals that GST-based dynamic SHG switches can be potentially employed in practical applications, such as microscopy, optical communication, and photonic computing in the nonlinear regime.

42 ENGINEERING↗
DOE OSTI2024

High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel

Laterally configured diamond photoconductive semiconductor switches (PCSS) with a buried, metallic p+ current channel are reported. Above bandgap ( λ ≤ 226 nm) optical triggering enables responsivity of over 130 mA/W. The use of low-impurity semi-insulating diamond as an active absorption layer enables fast rise and fall times (~2 ns) and on/off ratios greater than 10 11 . The PCSS excited with a laser energy of 20 nJ per pulse passes a high current density (44 A/cm) under a DC bias of 60 V, thanks to the buried metallic p+ current channel. The reported devices promise high current carrying capacity without the need for filamenting while leveraging the excellent optical, electronic, and thermal properties of diamond.

42 ENGINEERING↗
DOE OSTI2022

Light-induced Weyl semiconductor-to-metal transition mediated by Peierls instability

Elemental tellurium is a strongly spin-orbit coupled Peierls-distorted semiconductor whose band structure features topologically protected Weyl nodes. Here, using time-dependent density functional theory calculations, we show that impulsive optical excitation can be used to transiently control the amplitude of the Peierls distortion, realizing a mechanism to switch tellurium between three states: Weyl semiconductor, Weyl metal and non-Weyl metal. Further, we present experimental evidence of this inverse-Peierls distortion using time-resolved optical second harmonic generation measurements. These results provide a pathway to multifunctional ultrafast Weyl devices and introduce Peierls systems as viable hosts of light-induced topological transitions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Efficient and compact thermo-optic phase shifter in silicon-rich silicon nitride

The design, fabrication, and characterization of low-loss ultra-compact bends in high-index (${n} = {3.1}$ at $\lambda = {1550}\;{\rm nm}$) plasma-enhanced chemical vapor deposition silicon-rich silicon nitride (SRN) were demonstrated and utilized to realize efficient, small footprint thermo-optic phase shifter. Compact bends were structured into a folded waveguide geometry to form a rectangular spiral within an area of ${65} \times {65}\;\unicode{x00B5}{{\rm m}^2}$, having a total active waveguide length of 1.2 mm. The device featured a phase-shifting efficiency of $8\;{\rm mW}/\pi$ and a 3 dB switching bandwidth of 15 KHz. Here, we propose SRN as a promising thermo-optic platform that combines the properties of silicon and stoichiometric silicon nitride.

Nejadriahi, Hani↗
DOE OSTI2021

High energy (0.8 J) mechanically Q-switched 2.94 μm Er:YAG laser

We report a flashlamp pumped mechanically Q-switched (MQS) 2.94 μm Er:YAG laser based on a spinning mirror with a highest output energy of 805 mJ at a pulse duration of 61 ns and 13 MW of peak power at 1 Hz repetition rate. This record output energy was achieved with the use of 300 mm long MQS Er:YAG laser cavity consisting of a 70% output coupler, 7 × 120 mm AR coated Er(50%):YAG crystal, and 4200 rad/s angular speed of the spinning mirror. The pulse jitter was also measured by using optical triggering and was smaller than 10 ns for 150 ns Q-switched pulses, which could be applicable to many laser applications where precise synchronization of pulses is required.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Push—pull microring-assisted space-and-wavelength selective switch

We introduce a novel design of a space-and-wavelength selective switch based on microring-assisted Mach–Zehnder interferometers. Multiple pairs of overcoupled microring resonators are incorporated as efficient and narrowband phase shifters and are driven in push–pull scheme. We design and demonstrate a 2 × <#comment/> 2 × <#comment/> 2 λ <#comment/> elementary switch block with full spatial and spectral switching capabilities. The switching device’s cross talk suppression and extinction ratio both exceed 21 dB. We measure over 75 GHz optical bandwidth per channel and less than 1.5 dB power penalty at 10 − <#comment/> 9 BER when two 32 Gbps on–off keying signals are loaded simultaneously. This new class of switching elements can further enable compact and high-performance space-and-wavelength selective switch fabrics without the need for wavelength (de)multiplexers or parallel switching planes.

Huang, Yishen (ORCID:0000000278710462)↗
DOE OSTI2020

An intra-node HPC network architecture with nanosecond-scale photonic switches

We propose a single-stage network architecture for intra-node connectivity that makes use of nanosecond-scale photonic switches. Although buffering at the switch points is of vital importance for complex multi-stage networks, this is not the case for smaller-scale single-stage networks where the end nodes are located only one hop apart. By limiting the buffering to the end points, the proposed architecture manages to minimize the required electro-optic and opto-electronic conversions, leading in this way to both low end-to-end latency and better energy efficiency. Combining these advantages with nanosecond-scale switching times can allow for high-throughput operation even for frequent switch reconfigurations. The performance of the proposed architecture is evaluated via discrete-event simulations for a wide range of synthetic-traffic cases. The simulation results show that high-throughput operation of ≥90% can be achieved even for small message sizes, i.e., 32 KB for all-to-all communication and 2 KB for uniform random traffic, at a data rate of 400 Gb/s and a switch reconfiguration time of ≤72 ns. Moreover, if 100-ns reconfiguration times are achievable as opposed to 150-ns, then for the all-to-all traffic case a 16% and 28% reduction in completion time can be achieved for message sizes of 8 KB and 1 KB, respectively. In a forthcoming era of optically interfaced processors and accelerators, nanosecond-scale photonic switches appear as a highly promising solution for keeping up with the intra-node bandwidth scaling due to their high-bandwidth, low-latency and fast-switching capabilities.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenkamp and Gao). A characteristic conducting filament was quickly nucleated on the inhomogeneities in the sample and then propagated due to Joule heating. —JS

Science & Technology - Other Topics↗
DOE OSTI2021

Optics-on-a-chip for ultrafast manipulation of 350-MHz hard x-ray pulses

Microelectromechanical systems (MEMS) are miniature devices integrated into a vast range of industrial and consumer applications. Optical MEMS are developed for dynamic spatiotemporal control in lightwave manipulation and communication as modulators, switches, multiplexers, spectrometer, etc. However, they have not been shown to function similarly in sub-nm wavelength regimes, namely, with hard x-rays, as high-brilliance pulsed x-rays have proven powerful for addressing challenges in time-domain science, from energy conversion to neurobiological control. While desirable temporal properties of x-ray pulses can be enhanced by optics, conventional x-ray optics are inherently massive in size, hence, never dynamic. We demonstrate highly ultrafast x-ray optics-on-a-chip based on MEMS capable of modulating hard x-ray pulses exceeding 350 MHz, 10 3 × higher than any other mechanical modulator, with a pulse purity >10 6 without compromising the spectral brilliance. Moreover, the timing characteristics of the devices can be tuned on-the-fly to deliver optimal pulse properties to create a host of dynamic x-ray instruments and applications, impossible with traditional optics of 10 9 × bulkier and more massive. The advent of the ultrafast optics-on-a-chip heralds a new paradigm of x-ray photonics, time-domain science, and accelerator diagnostics, especially at not only the future-generation light sources that offer coherent and high-frequency pulses but also lab-based facilities that normally do not offer timing structures.

42 ENGINEERING↗
DOE OSTI2023

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electrically switchable metallic polymer metasurface device with gel polymer electrolyte

Abstract We present an electrically switchable, compact metasurface device based on the metallic polymer PEDOT:PSS in combination with a gel polymer electrolyte. Applying square-wave voltages, we can reversibly switch the PEDOT:PSS from dielectric to metallic. Using this concept, we demonstrate a compact, standalone, and CMOS compatible metadevice. It allows for electrically controlled ON and OFF switching of plasmonic resonances in the 2–3 µm wavelength range, as well as electrically controlled beam switching at angles up to 10°. Furthermore, switching frequencies of up to 10 Hz, with oxidation times as fast as 42 ms and reduction times of 57 ms, are demonstrated. Our work provides the basis towards solid state switchable metasurfaces, ultimately leading to submicrometer-pixel spatial light modulators and hence switchable holographic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Photofield electron emission from an optical fiber nanotip

In this work, we demonstrate a nanotip electron source based on a graded index multimode silica optical fiber, tapered at one end to a radius of curvature r ~50 nm and coated with a thin film of gold. We report observation of laser-induced electron photoemission at tip bias potentials below the onset of dark field emission. Single-photon photofield emission is identified as the emission mechanism that exhibits fast switching times with an upper limit on the order of 1 μ s. The explored fiber optic nanotips are flexible back-illuminated emitters, which can be operated in continuous wave and pulsed modes using lasers with photon energies in the visible range or higher. The mechanical flexibility of the source can facilitate externally controlled positioning. Multiple, individually addressable, nanotips may be assembled into a bundle for applications such as computational electron ghost imaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Ferroelectricity in Atomic Layer Deposited Wurtzite Zinc Magnesium Oxide Zn 1– x Mg x O

Conformal deposition of wurtzite ferroelectrics, which is needed for their use in scaled nonvolatile memories, is challenging using current physical vapor deposition techniques. To overcome the conformality barrier, this work demonstrates ferroelectricity in wurtzite Zn 1− x Mg x O thin films prepared by plasma-enhanced atomic layer deposition, which is a non-line-of-sight deposition method. Films ranging in composition from x = 0.00 to x = 0.58 are predominantly wurtzite phase and exhibit a (0001)-texture. Increasing the magnesium content decreases the c/a ratio, increases the optical bandgap energy, increases the piezoelectric response, and enables polarization reversal. Clear polarization switching is demonstrated in 50 nm thick Zn 1− x Mg x O films by piezoresponse force microscopy in compositions containing x = 0.46 and x = 0.58.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Design and validation of a cold load for characterization of cosmic microwave background stage 4 detectors

We present the design and validation of a variable temperature cryogenic blackbody source, hereinafter called a cold load, that will be used to characterize detectors to be deployed by cosmic microwave background stage 4 (CMB-S4), the next-generation ground-based cosmic microwave background (CMB) experiment. Although cold loads have been used for detector characterization by previous CMB experiments, this cold load has three innovative design features: (1) the ability to operate from the 1-K stage of a dilution refrigerator (DR), (2) a He3 gas-gap heat switch to reduce cooling time, and (3) the ability to couple small external optical signals to measure detector optical time constants under low optical loading. The efficacy of this design was validated using a 150-GHz detector array previously deployed by the Spider experiment. Thermal tests showed that the cold load can be heated to temperatures required for characterizing CMB-S4’s detectors without significantly impacting the temperatures of other cryogenic stages when mounted to the DR’s 1-K stage. In addition, optical tests demonstrated that external signals can be coupled to a detector array through the cold load without imparting a significant optical load on the detectors, which will enable measurements of the CMB-S4 detectors’ optical time constants.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Design and validation of a cold load for characterization of CMB-S4 detectors

We present the design and validation of a variable temperature cryogenic blackbody source, hereinafter called a cold load, that will be used to characterize detectors to be deployed by CMB-S4, the next-generation ground-based cosmic microwave background (CMB) experiment. Although cold loads have been used for detector characterization by previous CMB experiments, this cold load has three novel design features: (1) the ability to operate from the 1 K stage of a dilution refrigerator (DR), (2) a 3He gas-gap heat switch to reduce cooling time, and (3) the ability to couple small external optical signals to measure detector optical time constants under low optical loading. The efficacy of this design was validated using a 150 GHz detector array previously deployed by the Spider experiment. Here, thermal tests showed that the cold load can be heated to temperatures required for characterizing CMB-S4’s detectors without significantly impacting the temperatures of other cryogenic stages when mounted to the DR’s 1 K stage. Additionally, optical tests demonstrated that external signals can be coupled to a detector array through the cold load without imparting a significant optical load on the detectors, which will enable measurements of the CMB-S4 detectors’ optical time constants.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Molybdenum disulfide (MoS 2 ) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>10 10 ), immunity to short-channel effects, and unique switching characteristics. MoS 2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS 2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS 2 using the direct vapor phase sulfurization of MoO 3 . The samples grown on Si/SiO 2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS 2 layers. The MoS 2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS 2 suitable for optoelectronic application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗