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Power combiner/divider devised in which output from several solid-state modules combined directly into TE01 mode of circular waveguide. Results in low-loss, wide band device: because axisymmetry of TE01 mode, no essential limit on N. Latter feature is advantage in design of wide band, high-power, solid-state amplifiers operating at millimeter wavelengths.
Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.
Effective area of search coil increased. Input impedance presented by operational amplifier and associated components nearly balances out impedance of search coil. Fluctuations in ambient magnetic field induce large currents in search coil.
Prototype cooled low-noise microwave amplifiers based on high-electron-mobility transistors (HEMT's) considered as replacements for cooled ruby masers used as low-noise receiver-front-end amplifiers in communications, radio science, radar systems, radio astronomy, and telemetry. HEMT amplifier operates at 12 K, requires less cooling power and operates at lower cost with simpler, more-reliable cooling system.
This paper discusses the application of neural network pattern analysis algorithms to the IC fault diagnosis problem. A fault diagnostic is a decision rule combining what is known about an ideal circuit test response with information about how it is distorted by fabrication variations and measurement noise. The rule is used to detect fault existence in fabricated circuits using real test equipment. Traditional statistical techniques may be used to achieve this goal, but they can employ unrealistic a priori assumptions about measurement data. Our approach to this problem employs an adaptive pattern analysis technique based on feedforward neural networks. During training, a feedforward network automatically captures unknown sample distributions. This is important because distributions arising from the nonlinear effects of process variation can be more complex than is typically assumed. A feedforward network is also able to extract measurement features which contribute significantly to making a correct decision. Traditional feature extraction techniques employ matrix manipulations which can be particularly costly for large measurement vectors. In this paper we discuss a software system which we are developing that uses this approach. We also provide a simple example illustrating the use of the technique for fault detection in an operational amplifier.
A fourth order incremental analog to digital converter (ADC) is proposed which performs 18 bit conversions at a 50 kHz rate on sampled and held data. A new self calibration scheme is presented which eases the matching requirements of capacitors, and the performance of the operational amplifiers in the ADC by changing coefficients in the digital postprocessing.
Precision analog signal conditioning electronics have been developed for wind tunnel model attitude inertial sensors. This application requires low-noise, stable, microvolt-level DC performance and a high-precision buffered output. Capacitive loading of the operational amplifier output stages due to the wind tunnel analog signal distribution facilities caused regenerative oscillation and consequent rectification bias errors. Oscillation suppression techniques commonly used in audio applications were inadequate to maintain the performance requirements for the measurement of attitude for wind tunnel models. Feedback control theory is applied to develop a suppression technique based on a known compensation (snubber) circuit, which provides superior oscillation suppression with high output isolation and preserves the low-noise low-offset performance of the signal conditioning electronics. A practical design technique is developed to select the parameters for the compensation circuit to suppress regenerative oscillation occurring when typical shielded cable loads are driven.
Hopfield neural networks proposed for demodulating quadrature phase-shift-keyed (QPSK) signals carrying digital information. Networks solve nonlinear integral equations prior demodulation circuits cannot solve. Consists of set of N operational amplifiers connected in parallel, with weighted feedback from output terminal of each amplifier to input terminals of other amplifiers. Used to solve signal processing problems. Implemented as analog very-large-scale integrated circuit that achieves rapid convergence. Alternatively, implemented as digital simulation of such circuit. Also used to improve phase estimation performance over that of phase-locked loop.
With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.
The commercially available electrometers are typically used to survey for ESD (Electrostatic Discharge) prone materials in electronic component assembly areas. These instruments operate using either DC (direct current) or AC (alternating current). This description is concerned with a DC electrometer. The critical components are the detecting electrode, the input capacitance, operation amplifier (op amp), a shorting switch used to zero the instrument, and the charged surface. DC Instruments are used to measure the change in charge placed in front of the instruments detecting electrode after instrument is zeroed. These instruments -have the feature that the input voltage will drift with time. This drift is typically hours in duration and depends on the op amp input current. The conventional ESD survey instrument. During a measurement, the conventional electrometer is held at a known distance from a charged surface. The now DC electrometer, is used in a different manner than ESD survey instrument. In the new instrument, triboelectric materials are placed in contact with the surface to be measured, rubbed against the surface, removed from the surface, and the triboelectrically-induced charge measured. Thus, the distance between the charged surface and the detecting electrode is a known distance leading to a direct measure of the electric field and deposited charge.
A tunable local oscillator with a tunable circuit that includes a resonator and a transistor as an active element for oscillation. Tuning of the circuit is achieved with an externally applied dc bias across coupled lines on the resonator. Preferably the resonator is a high temperature superconductor microstrip ring resonator with integral coupled lines formed over a thin film ferroelectric material. A directional coupler samples the output of the oscillator which is fed into a diplexer for determining whether the oscillator is performing at a desired frequency. The high-pass and lowpass outputs of the diplexer are connected to diodes respectively for inputting the sampled signals into a differential operational amplifier. The amplifier compares the sampled signals and emits an output signal if there is a difference between the resonant and crossover frequencies. Based on the sampled signal, a bias supplied to the ring resonator is either increased or decreased for raising or lowering the resonant frequency by decreasing or increasing, respectively, the dielectric constant of the ferroelectric.
The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.
Deep space probes and planetary exploration missions require electrical power management and control systems that are capable of efficient and reliable operation in very cold temperature environments. Typically, in deep space probes, heating elements are used to keep the spacecraft electronics near room temperature. The utilization of power electronics designed for and operated at low temperature will contribute to increasing efficiency and improving reliability of space power systems. At NASA Glenn Research Center, commercial-off-the-shelf devices as well as developed components are being investigated for potential use at low temperatures. These devices include semiconductor switching devices, magnetics, and capacitors. Integrated circuits such as digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being evaluated. In this paper, results will be presented for selected analog-to-digital converters, oscillators, DC/DC converters, and pulse width modulation (PWM) controllers.
Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.
Tunable narrowband mid-infrared radiation from 3.25 to 4.4 micrometers is generated by a compact fiber-coupled, difference-frequency-based spectroscopic source. A 20-mW external cavity diode laser (with a tuning range from 814 to 870 nm) and a 50-mW distributed-Bragg-reflector diode-laser-seeded ytterbium-doped fiber amplifier operating at 1083 nm are difference-frequency mixed in a multi-grating, temperature-controlled periodically poled LiNbO3 crystal. A conversion efficiency of 0.44 mW/(W2cm) (corresponding to a power of approximately equal to 3 microW at 3.3 micrometers) represents the highest conversion efficiency reported for a portable device. Performance characteristics of such a sensor and its application to spectroscopic detection of CO2, N2O, H2CO, HCl, NO2, and CH4 will be reported in this work.
Electronic circuits and systems designed for deep space missions need to operate reliably and efficiently in harsh environments that include very low temperatures. Spacecraft that operate in such cold environments carry a large number of heaters so that the ambient temperature for the onboard electronics remains near 20 C. Electronics that can operate at cryogenic temperatures will simplify system design and reduce system size and weight by eliminating the heaters and their associated structures. As a result, system development and launch cost will be reduced. At the NASA Glenn Research Center, an ongoing program is focusing on the development of power electronics geared for deep space low-temperature environments. The research and development efforts include electrical components design, circuit design and construction, and system integration and demonstration at cryogenic temperatures. Investigations are being carried out on circuits and systems that are targeted for use in NASA missions where low temperatures will be encountered: devices such as ceramic and tantalum capacitors, metal film resistors, semiconductor switches, magnetics, and integrated circuits including dc/dc converters, operational amplifiers, voltage references, and motor controllers. Test activities cover a wide range of device and circuit performance under simple as well as complex test conditions, such as multistress and thermal cycling. The effect of low-temperature conditions on the switching characteristics of an advanced silicon-on-insulator field effect transistor is shown. For gate voltages (VGS) below 2.6 V, drain currents at -190 C are lower than drain currents at room temperature (20 C).
Artificial neural networks, derived from their biological counterparts, offer a new and enabling computing paradigm specially suitable for such tasks as image and signal processing with feature classification/object recognition, global optimization, and adaptive control. When implemented in fully parallel electronic hardware, it offers orders of magnitude speed advantage. Basic building blocks of the new architecture are the processing elements called neurons implemented as nonlinear operational amplifiers with sigmoidal transfer function, interconnected through weighted connections called synapses implemented using circuitry for weight storage and multiply functions either in an analog, digital, or hybrid scheme.
The visual system within an aircraft flight simulation system receives flight data and terrain data which is formated into a buffer memory. The image data is forwarded to an image processor which translates the image data into face vertex vectors Vf, defining the position relationship between the vertices of each terrain object and the aircraft. The image processor then rotates, clips, and projects the image data into two-dimensional display vectors (Vd). A display generator receives the Vd faces, and other image data to provide analog inputs to CRT devices which provide the window displays for the simulated aircraft. The video signal to the CRT devices passes through an edge smoothing device which prolongs the rise time (and fall time) of the video data inversely as the slope of the edge being smoothed. An operational amplifier within the edge smoothing device has a plurality of independently selectable feedback capacitors each having a different value. The values of the capacitors form a series which doubles as a power of two. Each feedback capacitor has a fast switch responsive to the corresponding bit of a digital binary control word for selecting (1) or not selecting (0) that capacitor. The control word is determined by the slope of each edge. The resulting actual feedback capacitance for each edge is the sum of all the selected capacitors and is directly proportional to the value of the binary control word. The output rise time (or fall time) is a function of the feedback capacitance, and is controlled by the slope through the binary control word.