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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Nanosecond Laser Drying in Wafer Foundries for Significant Energy Efficiency Improvement

Surface drying is a critical process in microelectronics wafer fabrication. In order to reduce and eliminate watermarks, many surface drying processes have been studied and used. Most of the wafer foundries currently use drying processes based on Isopropyl Alcohol (IPA), which causes serious safety (fire), health, environmental, and energy efficiency issues. The long-term goal of this project is to develop a fast, effective, chemical-free, and extremely energy efficient wafer drying technology that employs nanosecond laser-induced sub-surface evaporation and explosion. The objectives of this project are to 1) experimentally develop and verify the laser surface drying method, explore and identify how and to what extent various physical parameters influence the drying efficiency and effectiveness; and 2) understand and optimize the underlying thermodynamics in the proposed laser surface drying, including micro/nanoscale sub-surface superheating, evaporation, explosion, and photo/thermochemical bond breaking via atomistic modeling and experimental characterization. Toward these objectives, five tasks have been accomplished successfully, including 1) develop in-lab laser surface drying setup and study the effect of varied laser parameters, 2) use multiscale hybrid-modeling to study and understand the physics of water behavior during drying toward process optimization, 3) investigate the effect of drying conditions on the drying effectiveness, 4) develop a large-scale laser drying scanning system with automatic scanning, and 5) conduct large-scale simulation to study the effect of dopant level and develop strategies for system development toward industry deployment.

42 ENGINEERING↗
DOE OSTI2015

Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substrate surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Freestanding Photoresist Film: A Versatile Template for Three-Dimensional Micro- and Nanofabrication

Ultrathin freestanding films with well-defined micro/nanostructures and robust mechanical properties are applied in many engineering applications including microelectronics, optics, filtration and separation, biomedical engineering, and nanotechnology. Although considerable efforts have been made toward the fabrication of freestanding thin films, it is still a significant challenge to develop a simple and reliable process for producing freestanding films with ultrathin thickness, well-regulated micro/nanopatterns, robust mechanical properties, macroscopic coverage area, and multi-layered composite structures. In this work, a significant advancement is reported in this regard. This study shows a new sacrificial-layer-free (SLF) lifting-off process, integrated with conventional micro- and nanolithography, enabling the release of micro- and nanopatterned photoresist (PR) films from the supporting substrate with unprecedented pattern coverage and structure characteristics. The freestanding PR film is resilient, can withstand significant bending and deformation, and is sufficiently flexible to be transferred onto substrates with 3D topography as a conformal soft stencil for further technological processing and applications. Moreover, the SLF lifting-off process provides a simple approach to prepare single-layered and multi-layered freestanding composite films. The results suggest that the novel SLF lifting-off process can significantly extend the capability of 3D micro-/nanofabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films

High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. Here, in this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m -1 K -1 for 25.5–133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron–phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron–phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Structural Damage and Recrystallization Response of Garnet Crystals to Intense Electronic Excitation

Here, the susceptibility to irradiation-induced damage, the fundamental mechanism of the relaxation kinetics, and the corresponding recrystallization effect related to the cation radius ratio are comprehensively investigated for Y 3 Al 5 O 12 and Gd 3 Ga 5 O 12 garnet crystals under 645 MeV Xe 35+ irradiation with different fluences of 5 × 10 11 –3 × 10 12 ions cm –2 . Regarding different lattice distortion and swelling levels, the observed microstructure transformations to disordered and amorphous phases, and corresponding hillock dimensions, consistently confirm that Gd 3 Ga 5 O 12 has a higher susceptibility to radiation damage than Y 3 Al 5 O 12 . Combined with iTS model calculations, although Y 3 Al 5 O 12 has higher atomic temperature and energy deposition than Gd 3 Ga 5 O 12 under the same ion velocity and electronic energy loss, the relatively high thermal conductivity and specific heat coefficient of Y 3 Al 5 O 12 crystals enhance the conduction and dissipation of deposition energy, and Gd 3 Ga 5 O 12 , with a higher cation-radius-ratio (r A /r B ), is more easily damaged to amorphous phase due to the less favorable kinetics of ordering and recovery of a melted track region to the crystalline phase. Additionally, the significant bandgap modification in spectral ranges of 5.88–6.75 eV for Y 3 Al 5 O 12 and 4.83–5.41 eV for Gd 3 Ga 5 O 12 , and the enhancement of defect-assisted-related luminescence are achieved, providing a basis to design novel optoelectronic devices in microelectronics fields.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Tailoring the Electronic Structures and Spectral Properties of ZnO with Irradiation Defects Generated Under Intense Electronic Excitation: A Combined Experimental and DFT Approach

Here, the relationship between the composition of the internal defect states, spectral properties, and correlated electronic structures of wurtzite zinc oxide (ZnO) crystals under 645 MeV Xe 35+ irradiation is systematically investigated, employing experimental characterizations combined with first-principle calculations. Based on the ion irradiation-induced thermal expansion and relaxation processes, the high concentration of vacancy/interstitial defects produced from the transient disordered phase in molten track states trigger photoelectric changes, as follows: i) the generation of internal defect states effectively reduces the intrinsic bandgap (3.25 eV → 2.66 eV); ii) a large number of defective active sites inhibits the recombination between electron–hole pairs, causing dark conductance and photoconductance to increase with increasing damage levels until optimal fluence is achieved. Based on the density functional theory (DFT) with the GGA + U (GGA = generalized gradient approximation) method, the defective models associated with the different electronic structures, density of states, formation energy, and the nature of the chemical bonding are established. The narrowing of the bandgap observed experimentally and the enhancement of carrier concentration originating from the internal electron defect states are qualitatively verified, therefore laying the foundation for designing future nanoscale photoelectronic devices and microelectronics applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode

Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Machine Detection of Enhanced Electromechanical Energy Conversion in PbZr 0.2 Ti 0.8 O 3 Thin Films

Many energy conversion, sensing, and microelectronic applications based on ferroic materials are determined by the domain structure evolution under applied stimuli. New hyperspectral, multidimensional spectroscopic techniques now probe dynamic responses at relevant length and time scales to provide an understanding of how these nanoscale domain structures impact macroscopic properties. Such approaches, however, remain limited in use because of the difficulties that exist in extracting and visualizing scientific insights from these complex datasets. Using multidimensional band-excitation scanning probe spectroscopy and adapting tools from both computer vision and machine learning, an automated workflow is developed to featurize, detect, and classify signatures of ferroelectric/ferroelastic switching processes in complex ferroelectric domain structures. This approach enables the identification and nanoscale visualization of varied modes of response and a pathway to statistically meaningful quantification of the differences between those modes. Lastly, among other things, the importance of domain geometry is spatially visualized for enhancing nanoscale electromechanical energy conversion.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Lattice Softening Significantly Reduces Thermal Conductivity and Leads to High Thermoelectric Efficiency

The influence of micro/nanostructure on thermal conductivity is a topic of great scientific interest, particularly to thermoelectrics. The current understanding is that structural defects decrease thermal conductivity through phonon scattering where the phonon dispersion and speed of sound are assumed to remain constant. Experimental work on a PbTe model system is presented, which show that the speed of sound linearly decreases with increased internal strain. This softening of the materials lattice completely accounts for the reduction in lattice thermal conductivity, without the introduction of additional phonon scattering mechanisms. Additionally, it is shown that a major contribution to the improvement in the thermoelectric figure of merit (zT > 2) of high-efficiency Na-doped PbTe can be attributed to lattice softening. While inhomogeneous internal strain fields are known to introduce phonon scattering centers, this study demonstrates that internal strain can modify phonon propagation speed as well. This introduces new avenues to control lattice thermal conductivity, beyond phonon scattering. In practice, many engineering materials will exhibit both softening and scattering effects, as is shown in silicon. Here, we shine new light on studies of thermal conductivity in fields of energy materials, microelectronics, and nanoscale heat transfer.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Scalable Polymer Nanocomposites with Record High‐Temperature Capacitive Performance Enabled by Rationally Designed Nanostructured Inorganic Fillers

Abstract Next‐generation microelectronics and electrical power systems call for high‐energy‐density dielectric polymeric materials that can operate efficiently under elevated temperatures. However, the currently available polymer dielectrics are limited to relatively low working temperatures. Here, the solution‐processable polymer nanocomposites consisting of readily prepared Al 2 O 3 fillers with systematically varied morphologies including nanoparticles, nanowires, and nanoplates are reported. The field‐dependent electrical conduction of the polymer nanocomposites at elevated temperatures is investigated. A strong dependence of the conduction behavior and breakdown strength of the polymer composites on the filler morphology is revealed experimentally and is further rationalized via computations. The polymer composites containing Al 2 O 3 nanoplates display a record capacitive performance, e.g., a discharged energy density of 3.31 J cm −3 and a charge–discharge efficiency of >90% measured at 450 MV m −1 and 150 °C, significantly outperforming the state‐of‐the‐art dielectric polymers and nanocomposites that are typically prepared via tedious, low‐yield approaches.

Li, He↗
DOE OSTI2021

Chiral Spin Textures in Amorphous Iron–Germanium Thick Films

Topological solitary fields, such as magnetic and polar skyrmions, are envisioned to revolutionize microelectronics. These configurations have been stabilized in solid-state materials with a global inversion symmetry breaking, which translates in magnetic materials into a vector spin exchange known as the Dzyaloshinskii-Moriya interaction (DMI), as well as spin chirality selection and isotropic solitons. This work reports experimental evidence of 3D chiral spin textures, such as helical spins and skyrmions with different chirality and topological charge, stabilized in amorphous Fe-Ge thick films. Overall, these results demonstrate that structurally and chemically disordered materials with a random DMI can resemble inversion symmetry broken systems with similar magnetic properties, moments, and states. Disordered systems are distinguished from systems with global inversion symmetry breaking by their degenerate spin chirality that allows for forming isotropic and anisotropic topological spin textures at remanence, while offering greater flexibility in materials synthesis, voltage, and strain manipulation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Solution-Deposited and Patternable Conductive Polymer Thin-Film Electrodes for Microbial Bioelectronics

Microbial bioelectronic devices integrate naturally occurring or synthetically engineered electroactive microbes with microelectronics. These devices have a broad range of potential applications, but engineering the biotic–abiotic interface for biocompatibility, adhesion, electron transfer, and maximum surface area remains a challenge. Prior approaches to interface modification lack simple processability, the ability to pattern the materials, and/or a significant enhancement in currents. We report a novel conductive polymer coating that significantly enhances current densities relative to unmodified electrodes in microbial bioelectronics is reported. The coating is based on a blend of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) crosslinked with poly(2-hydroxyethylacrylate) (PHEA) along with a thin polydopamine (PDA) layer for adhesion to an underlying indium tin oxide (ITO) electrode. When used as an interface layer with the current-producing bacterium Shewanella oneidensis MR-1, this material produces a 178-fold increase in the current density compared to unmodified electrodes, a current gain that is higher than previously reported thin-film 2D coatings and 3D conductive polymer coatings. The chemistry, morphology, and electronic properties of the coatings are characterized and the implementation of these coated electrodes for use in microbial fuel cells, multiplexed bioelectronic devices, and organic electrochemical transistor based microbial sensors are demonstrated. It is envisioned that this simple coating will advance the development of microbial bioelectronic devices.

patterned bioelectronics↗
DOE OSTI2021

Magnetic Materials: Chiral Spin Textures in Amorphous Iron–Germanium Thick Films (Adv. Mater. 8/2021)

Topological solitary fields, such as magnetic and polar skyrmions, are envisioned to revolutionize microelectronics. These configurations have been stabilized in solid-state materials with a global inversion symmetry breaking, which translates in magnetic materials into a vector spin exchange known as the Dzyaloshinskii–Moriya interaction (DMI), as well as spin chirality selection and isotropic solitons. This work reports experimental evidence of 3D chiral spin textures, such as helical spins and skyrmions with different chirality and topological charge, stabilized in amorphous Fe–Ge thick films. These results demonstrate that structurally and chemically disordered materials with a random DMI can resemble inversion symmetry broken systems with similar magnetic properties, moments, and states. In conclusion, disordered systems are distinguished from systems with global inversion symmetry breaking by their degenerate spin chirality that allows for forming isotropic and anisotropic topological spin textures at remanence, while offering greater flexibility in materials synthesis, voltage, and strain manipulation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Probabilistic Neural Computing with Stochastic Devices

Abstract The brain has effectively proven a powerful inspiration for the development of computing architectures in which processing is tightly integrated with memory, communication is event‐driven, and analog computation can be performed at scale. These neuromorphic systems increasingly show an ability to improve the efficiency and speed of scientific computing and artificial intelligence applications. Herein, it is proposed that the brain's ubiquitous stochasticity represents an additional source of inspiration for expanding the reach of neuromorphic computing to probabilistic applications. To date, many efforts exploring probabilistic computing have focused primarily on one scale of the microelectronics stack, such as implementing probabilistic algorithms on deterministic hardware or developing probabilistic devices and circuits with the expectation that they will be leveraged by eventual probabilistic architectures. A co‐design vision is described by which large numbers of devices, such as magnetic tunnel junctions and tunnel diodes, can be operated in a stochastic regime and incorporated into a scalable neuromorphic architecture that can impact a number of probabilistic computing applications, such as Monte Carlo simulations and Bayesian neural networks. Finally, a framework is presented to categorize increasingly advanced hardware‐based probabilistic computing technologies.

Misra, Shashank↗
DOE OSTI2023

The Synthescope: A Vision for Combining Synthesis with Atomic Fabrication

Here, the scanning transmission electron microscope, a workhorse instrument in materials characterization, is being transformed into an atomic-scale material-manipulation platform. With an eye on the trajectory of recent developments and the obstacles toward progress in this field, a vision for a path toward an expanded set of capabilities and applications is provided. The microscope is reconceptualized as an instrument for fabrication and synthesis with the capability to image and characterize atomic-scale structural formation as it occurs. Further development and refinement of this approach may have substantial impact on research in microelectronics, quantum information science, and catalysis, where precise control over atomic-scale structure and chemistry of a few “active sites” can have a dramatic impact on larger-scale functionality and where developing a better understanding of atomic-scale processes can help point the way to larger-scale synthesis approaches.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Spatially Precise Light‐Activated Dedoping in Wafer‐Scale MoS 2 Films

2D materials, particularly transition metal dichalcogenides (TMDCs), have shown great potential for microelectronics and optoelectronics. However, a major challenge in commercializing these materials is the inability to control their doping at a wafer scale with high spatial fidelity. Interface chemistry is used with the underlying substrate oxide and concomitant exposure to visible light in ambient conditions for photo-dedoping wafer scale MoS 2 . It is hypothesized that the oxide layer traps photoexcited holes, leaving behind long-lived electrons that become available for surface reactions with ambient air at sulfur vacancies (defect sites) resulting in dedoping. Additionally, high fidelity spatial control is showcased over the dedoping process, by laser writing, and fine control achieved over the degree of doping by modulating the illumination time and power density. This localized change in MoS 2 doping density is very stable (at least 7 days) and robust to processing conditions like high temperature and vacuum. The scalability and ease of implementation of this approach can address one of the major issues preventing the “Lab to Fab” transition of 2D materials and facilitate its seamless integration for commercial applications in multi-logic devices, inverters, and other optoelectronic devices.

14 SOLAR ENERGY↗
DOE OSTI2026

Decoding THz‐Driven Dynamic Fingerprints of Ferroelectric Nanotwin Networks

Ultrafast polarization dynamics in ferroelectrics are of considerable interest for high-speed tunable dielectrics and electro-optics. Extended domain wall networks formed in ferroelectric twin nanodomains can support collective dynamics in the terahertz regime but require techniques that track polarization and strain evolution driven by ultrafast stimulus. Here, we use multi-modal probing of THz-pulse-driven excitations in PbTiO 3 /SrTiO 3 superlattices by combining X-ray free electron laser measurements that directly tracks lattice changes, with optical second harmonic generation that tracks the electronic potential coupled with the lattice potential. Dynamical phase-field modeling enables fingerprinting of these collective modes as superpositions of domain “breathing” through wall oscillations and polarization “rotations” with still walls. Ultrafast domain wall motion at 0.1–0.5 THz is observed at practical fields of 100 kV/cm with wall velocities of >4000 m/s, approaching typical speed of sound in PbTiO 3 . A unique “charging” mode is discovered that can electrically charge and discharge domain walls on ∼4 ps time scale thus dynamically tuning wall conductivity. Integrated experimental and theoretical fingerprinting of the dynamical landscape presented here enables ultrafast control of ferroics for high-speed microelectronics and optical applications.

THz dynamics↗