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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Metallic Electrode: Semiconducting Nanotube Junction Model

A model is proposed for two observed current-voltage (I-V) patterns in an experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 ('97)]. We claim that there are two contact modes for a tip (metal) -nanotube semi conductor) junction depending whether the alignment of the metal and semiconductor band structure is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this picture to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor (Zhou et al., Appl. Phys. Lett. 76, 1597 ('00)], and show that two independent metal-semiconductor junctions connected in series are responsible for the observed behavior.

Yamada, Toshishige↗
NASA NTRS2002

Antenna-Coupled Superconducting Tunnel Junctions with Single-Electron Transistor Readout for Detection of Sub-mm Radiation

Antenna-coupled superconducting tunnel junction detectors have the potential for photon-counting sensitivity at sub-mm wavelengths. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Stevenson, T. R.↗
NASA NTRS2002

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation using Superconducting Tunnel Junctions with Radio-Frequency Single-Electron Transistors

The science drivers for the SPIRIT/SPECS missions demand sensitive, fast, compact, low-power, large-format detector arrays for high resolution imaging and spectroscopy in the far infrared and submillimeter. Detector arrays with 10,000 pixels and sensitivity less than 10(exp 20)-20 W/Hz(exp 20)0.5 are needed. Antenna-coupled superconducting tunnel junction detectors with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique when forming arrays. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Stevenson, T. R.↗
NASA NTRS2002

The Electrostatic Breakdown on Metal-Dielectric Junction Immersed in a Plasma

New results are presented of an experimental study and theoretical analysis of arcing on metal-dielectric junctions immersed in low-density plasmas. Two samples of conventional solar arrays and four different metal-quartz junctions have been used to investigate the effects of arcing within a wide range of neutral gas pressures, ion currents, and electron number densities. The effect of surface conditioning (decrease of arc rate due to outgassing) was clearly demonstrated. Moreover, a considerable increase in arc rate due to absorption of molecules from atmospheric air has been confirmed. It has been proved that the are inception mechanism in plasma is different from one in vacuum.

Vayner, Boris V.↗
NASA NTRS2002

The Neutral Gas Desorption and Breakdown on a Metal-Dielectric Junction Immersed in a Plasma

New results are presented of an experimental study and theoretical analysis of arcing on metal-dielectric junctions immersed in a low-density plasma. Two samples of conventional solar arrays have been used to investigate the effects of arcing within a wide range of neutral gas pressures, ion currents, and electron number densities. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, intensities of spectral lines, and so on). Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are trip le-junctions, even though some arcs were initiated in gaps between cells. The effect of surface conditioning (decrease of arc rate due to outgassing) was clearly demonstrated. Moreover, a considerable increase in arc rate due to absorption of molecules from atmospheric air has been confirmed. The analysis of optical spectra (240-800 nm) reveals intense narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirm a complicated mechanism of arc plasma generation. The rate of plasma contamination due to arcing was measured by employing a mass-spectrometer. These measurements provided quite reliable data for the development of a theoretical model of plasma contamination, In conclusion, the arc threshold was increased to above 350 V (from 190 V) by keeping a sample in vacuum (20 micronTorr) for seven days. The results obtained are important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high voltage solar arrays for space applications.

Vayner, Boris↗
NASA NTRS2004

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Stevenson, T. R.↗
NASA NTRS2005

n/p/n Tunnel Junction InGaAs Monolithic Interconnected Module (MIM)

The Monolithic Interconnected Module (MIM), originally introduced at the First NREL thermophotovoltaic (TPV) conference, consists of low-bandgap indium gallium arsenide (InGaAs) photovoltaic devices, series interconnected on a common semi-insulating indium phosphide (inP) substrate. An infrared reflector is deposited on the back surface of the substrate to reflect photons, which were not absorbed in the first pass through the structure. The single largest optical loss in the current device occurs int he heavily doped p-type emitter. A new MIM design (pat.pend.) has been developed which flips the polarity of the conventional MIM cell (i.e., n/p rather than p/n), eliminating the need for the high conductivity p-type emitter. The p-type base of the cell is connected to the n-type lateral conduction layer through a thin InGaAs tunnel junction. 0.58 eV and 0.74 eV InGaAs devices have demonstrated reflectances above 90% for wavelengths beyond the bandgap (greater than 95% for unprocessed structures). Electrical measurements indicate minimal voltage drops across the tunnel junction (less than mV/junction under 1200K-blackbody illumnination) and fill factors that are above 70% at current densities (J(sub sc)) above 8 Angstroms per square centimeters for the 0.74eV devices.

Wilt, David M.↗
NASA NTRS2005

Investigations To Characterize Multi-Junction Solar Cells In The Stratosphere Using Low-Cost Balloon And Communication Technologies

The use of current balloon, control and communication technologies to test multi-junction solar sell in the stratosphere to achieve near AMO conditions have been investigated. The design criteria for the technologies are that they be reliable, low cost and readily available. Progress is reported on a program to design, launch, fly and retrieve payloads dedicated to testing multi-junction solar cells.

Bowe, Glenroy A.↗
NASA NTRS1997

High-Tc SNS Junctions: A New Generation of Proximity-Coupled Josephson Devices

This paper reviews this evolution of proximity - coupled Josephson jucntion from the early investigations on low temperature superconductor-normal -superconductor junctions through the introduction of hybrid superconductor-semiconductor devices and the resulting interest in mesoscopic Josephson junctions, to the recent development of high temperature devices.

Proximity-Coupled Josephson↗
NASA NTRS1997

Processing of Superconductor-Normal-Superconductor Josephson Edge Junctions

The electrical behavior of epitaxial superconductor-normal-superconductor (SNS) Josephson edge junctions is strongly affected by processing conditions. Ex-situ processes, utilizing photoresist and polyimide/photoresist mask layers, are employed for ion milling edges for junctions with Yttrium-Barium-Copper-Oxide (YBCO) electrodes and primarily Co-doped YBCO interlayers.

photoresist polyimide process interlayer materials↗
NASA NTRS1987

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funnelling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Zoutendyk, John A.↗
NASA NTRS1978

Photovoltaic device having an extended PN junction

A photovoltaic device having essentially only a body of semiconductor material having a first region of one conductivity type in contact with a second region of the opposite conductivity type, forming a portion of the device PN junction therebetween. A plurality of pocket regions of the same conductivity type as the first region extend into the second region thereby further defining a portion of the PN junction in the second region.

D'Aiello, Robert Vincent↗
NASA NTRS2010

Novel Micro Strip-to-Waveguide Feed Employing a Double-Y Junction

Previous micro strip -to -waveguide transitions either required a hermetically sealed waveguide configuration, or a balun that needed to be tuned according to the frequency band of interest. In this design, the balun is realized using a double -Y junction to transition from microstrip to coplanar strip feeding a quasi-Yagi dipole array (see figure). The length of the feed (Lf) extending into the waveguide is 15.54 mm. The length of the ground plane below the ULTRALAM substrate is 7.75 mm. The lengths L1 , L2, and L3 are 8.50 mm, 4.38 mm, and 2.14 mm, respectively. These lengths were computed via a preliminary optimization aimed at improving the return loss at the band edges. The waveguide feed was designed to excite the TE10 mode in a WR-90 waveguide, and to operate over the recommended frequencies of 8.2 to 12.4 GHz. The feed employs a Rogers 6010 substrate (dielectric constant Er approx. equals 10.2) bonded with a Rogers ULTRALAM substrate (Er approx. equals 2.5). The ULTRALAM substrate serves to provide mechanical strength for 6010 substrate, and to mitigate loses due to parasitic modes (the ground plane is etched on the bottom of this layer due to the topology of the double -Y balun). The double-Y balun transitioning from an unbalanced microstrip line to a balanced coplanar strip (CPS) line does not provide inherent impedance transformation; hence, Klopfenstein impedance tapers were synthesized to transition from 50 to 77 Ohms in the microstrip section and from 77 to 110 Ohms in the CPS section. At the balun junction, the CPS stub lengths were chosen such that the X/ 8 resonance is pushed outside the bandwidth of operation. Also, the smallest allowable conductor width and gap spacing were chosen to meet acceptable manufacturing tolerances.

Venkatesan, Jaikrishina↗
NASA NTRS2003

180 Degree Hybrid (Rat-Race) Junction on CMOS Grade Silicon with a Polyimide Interface Layer

180-degree hybrid junctions can be used to equally divide power between two output ports with either a 0 or 180-degree phase difference. Alternatively, they can be used to combine signals from two sources and output a sum and difference signal. The main limitation of implementing; these on CMOS grade silicon is the high loss associated with the substrate. In this paper, we present a low loss 180-degree hybrid junction on CMOS grade (15 omega-cm) silicon with a polyimide interface layer for the first time. The divider utilizes Finite Ground Coplanar (FGC) line technology, and operates at a center frequency of 15 GIIz.

Ponchak, George E.↗
NASA NTRS2019

Flow-Field Measurements in a Wing-Fuselage Junction Using an Embedded Particle Image Velocimetry System

A novel, embedded, 2D Particle Image Velocimetry system has been developed and implemented to obtain off-body velocity measurements in the junction of an 8% wing-body configuration in the NASA Langley Research Center 14- by 22-Foot Subsonic Tunnel. Although the initial purpose for implementing the system during this test was to evaluate system performance and identify potential risks, the system worked remarkably well and a considerable amount of data were obtained in the wing-fuselage junction near the trailing edge at a Reynolds Number of 2.4 Million and angle of attack of 5 degrees. In addition to providing notable efficiencies with regard to image acquisition and test operations, the PIV system proved to be quite capable of capturing unique details of the flow separation to complement the extensive suite of measurement techniques applied during the test. Instantaneous PIV vector fields reveal that the flow separation is not stationary but rather highly dynamic. Mean flow statistics calculated from the PIV measurements highlight where reverse flow and Reynolds stresses are concentrated in the separated region and agree well with results from the embedded Laser Doppler Velocimeter system and Computational Fluid Dynamics. The comparisons and additional insight gained during this effort will help guide system improvements for follow-on tests.

Jenkins, Luther N.↗