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DOE OSTI2026

Coupled Roles of Surface Chemistry and Hydrogen-Assisted Cycling in Ruthenium Atomic Layer Deposition on Silicon Oxides

Ruthenium (Ru) is a promising interconnect material for advanced semiconductor technologies due to its favorable scaling characteristics, including a short electron mean free path and strong electromigration resistance. In semiconductor integration, silicon oxide-based dielectrics serve as dominant insulating materials and constitute ubiquitous interfaces for metallization; however, their formation-dependent surface chemistry and its impact on Ru growth remain insufficiently explored. Here, we investigate Ru ALD on native oxide SiO x (N-SiO x ) and thermally grown SiO 2 (T-SiO 2 ) as model substrates using bis(ethylcyclopentadienyl)ruthenium(II) [Ru(EtCp) 2 ] under two distinct reactant-sequence environments: AB-type (Ru(EtCp) 2 /O 2 ) and hydrogenassisted ABC-type (Ru(EtCp) 2 /O 2 /H 2 ). Under the AB-type process, both N-SiO x and T-SiO 2 exhibit pronounced nucleation delay. N-SiO x shows earlier nucleation and higher nucleation density than T-SiO 2 , plausibly attributed to differences in surface hydroxyl populations. Similar temperature-dependent phase evolution is observed on both substrates, with mixed Ru and RuO 2 phases at 250 °C and predominantly metallic Ru at 300 °C accompanied by increased morphological roughening. In contrast, incorporating an H 2 subpulse (ABC-type) mitigates nucleation delay, particularly on hydroxyl-deficient T-SiO 2 , thereby reducing the substratedependent disparity observed under AB cycling. Moreover, RuO 2 formation is suppressed even at 250 °C on both substrates, shifting growth toward more metallic Ru with reduced resistivity (∼20 μΩ·cm at ∼ 20 nm on N-SiO x ). These trends suggest that H 2 influences the surface reaction pathway, contributing to enhanced metallic stabilization and altered early stage growth kinetics. Overall, this work clarifies the coupled roles of substrate chemistry and reactant-sequence design in governing Ru nucleation and early stage film evolution, providing insight relevant to next-generation interconnect integration and future area-selective deposition strategies.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Calorimetric Energies and Chemical Potentials of Metal Atoms in Catalytic Nanoparticles on Oxide and Carbon Supports: Improved Size Dependencies and Adhesion Energies

The chemical potential of metal atoms, μM, in supported metal nanoparticles is an important descriptor related to both the catalytic activity and the stability of the nanoparticles. Here, we derive an expression relating μM to the radius of the particle’s contact area with the support and the adhesion energy at the metal/support interface (E adh ) that assumes the particles have the shape of spherical caps but of arbitrary contact angle with the support (θ c ) and includes an empirical correction for the increase in metal surface energy and adhesion energy with decreasing radius of curvature. We then show that, at any assumed contact angle, we can simultaneously fit previously reported measurements of both calorimetric μ M (from heats of metal vapor adsorption during nanoparticle growth by vapor deposition) versus metal coverage data and the He + low-energy ion scattering (LEIS) intensities for the metal and/or support versus metal coverage (using our recently developed spherical cap model for quantitative LEIS intensities), to determine the particle size versus coverage and E adh . Only one choice of contact angle gives a pair of values for contact angle and E adh , which is consistent with the Young–Dupré equation for the equilibrium shape of a spherical particle. At this equilibrium shape, we then applied this spherical cap model (SCM) to reanalyze microcalorimetric metal chemical potentials and LEIS signals versus coverage data for nine metal/support combinations that were previously analyzed by assuming that the particles had the shape of hemispherical caps, i.e., with a contact angle of 90°. We show that this revised approach gives close agreement with the calorimetric and LEIS data; the best-fit contact angles vary from 64 to 84°, correcting the earlier assumption of 90°. Furthermore, these results provide significant accuracy improvements in particle size versus coverage, metal chemical potential versus size and coverage, metal/support adhesion energies and contact angles for Cu, Ag and Au on CeO 2 (111), Ni on MgO(100), Ag on Fe 3 O 4 (111) and TiO 2 (100), and Ag, Ni and Pd on Ni-supported graphene. This revised approach is much more broadly applicable than the earlier hemispherical cap model (HCM).

99 GENERAL AND MISCELLANEOUS↗