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At least 199 records · Page 11

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NASA NTRS1985

Reversal ion source - A new source of negative ion beams

A new type of ion source utilizing beams of electrons and target molecules, rather than a diffuse, volume plasma, is described. The source utilizes an electrostatic electron 'mirror' which reverses trajectories in an electron beam, producing electrons at their turning point having a distribution of velocities centered at zero velocity. A gas which attaches zero-velocity electrons is introduced at this turning point. Negative ions are produced by an attachment or dissociative attachment process. For many of the thermal electron-attaching molecules the cross sections can be quite large, varying as the inverse square root of the electron energy or just the s-wave threshold law. The efficiency and current density of the ion source for production of Cl(-) through the large, thermal energy attachment process is estimated. It is argued that the source can be used for the production of negative ions through attachment resonances located at higher energies as well.

Orient, O. J.↗

NASA NTRS1988

Ion beam releases at rocket altitudes

NASA Flight 29.015 was the third in a series of flights to study the electrodynamics of man-produced ion beams in the ionosphere. Much like an earlier flight (Moore at al., 1982 and 1983; Kaufman et al., 1985), plasma releases perpendicular to the earth's B field result in ions being measured, often at reduced energies, several hundred meters from the source along the magnetic field. Releases at 200-eV energy parallel to B, however, result in over-200-eV ions measured above the source. In addition, parallel ion releases result in two additional populations of ions seen near 90-deg pitch angle; one near the energy of the generator, and the other at considerably lower energy. The energization of parallel ions could result from the same process by which electrons were accelerated to the generator payload as measured on an earlier flight, presumably due to blockage of natural field-aligned currents by gun-related wave turbulence. This turbulence is also undoubtedly inherent in the mechanism by which a parallel beam of ions creates a perpendicular component.

Pollock, C. J.↗

NASA NTRS1981

Ion beam accelerator system

A system is described that combines geometrical and electrostatic focusing to provide high ion extraction efficiency and good focusing of an accelerated ion beam. The apparatus includes a pair of curved extraction grids with multiple pairs of aligned holes positioned to direct a group of beamlets along converging paths. The extraction grids are closely spaced and maintained at a moderate potential to efficiently extract beamlets of ions and allow them to combine into a single beam. An accelerator electrode device downstream from the extraction grids is at a much lower potential than the grids to accelerate the combined beam. The application of the system to ion implantation is mentioned.

Aston, G.↗

NASA NTRS1986

Velocity distributions of ion beams in the plasma sheet boundary layer

The value of measured ion-beam velocity distributions as diagnostic tools to characterize the propagation and acceleration of particle beams in the plasma-sheet boundary layer is assessed. Models based on adiabatic deformation of a flowing Maxwellian, acceleration by field-aligned potentials, and current-sheet acceleration are fitted to observational data, and the results are presented in extensive diagrams and graphs. The data are found to be consistent with models involving field-aligned or cross-tail potential drops, but not with models based solely on the adiabatic deformation of initially isotropic distributions.

Eastman, T. E.↗

NASA NTRS1993

Cellular track model for study of heavy ion beams

Track theory is combined with a realistic model of a heavy ion beam to study the effects of nuclear fragmentation on cell survival and biological effectiveness. The effects of secondary reaction products are studied as a function of depth in a water column. Good agreement is found with experimental results for the survival of human T-l cells exposed to monoenergetic carbon, neon, and argon beams under aerobic and hypoxia conditions. The present calculation, which includes the effect of target fragmentation, is a significant improvement over an earlier calculation because of the use of a vastly improved beam model with no change in the track theory or cellular response parameters.

Shinn, Judy L.↗

NASA NTRS1990

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

Klein, J. D.↗

NASA NTRS1986

Thin film growth rate effects for primary ion beam deposited diamondlike carbon films

Diamondlike carbon (DLC) films were grown by primary ion beam deposition and the growth rates were measured for various beam energies, types of hydrocarbon gases and their ratio to Ar, and substrate materials. The growth rate had a linear dependence upon hydrocarbon content in the discharge chamber, and only small dependence on other parameters. For given deposition conditions a threshold in the atomic ratio of carbon to argon gas was identified below which films did not grow on fused silica substrate, but grew on Si substrate and on existing DLC films. Ion source deposition parameters and substrate material were found to affect the deposition threshold and film growth rates.

Nir, D.↗

NASA NTRS1978

The use of an ion-beam source to alter the surface morphology of biological implant materials

An electron bombardment, ion thruster was used as a neutralized-ion beam sputtering source to texture the surfaces of biological implant materials. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane were obtained.

Weigand, A. J.↗

NASA NTRS1979

Physical processes in directed ion beam sputtering

The general operation of a discharge chamber for the production of ions is described. A model is presented for the magnetic containment of both primary and secondary or Maxwellian electrons in the discharge plasma. Cross sections were calculated for energy and momentum transfer in binary collisions between like pairs of Ar, Kr, and Xe atoms in the energy range from about 1 eV to 1000 eV. These calculations were made from available pair interaction potentials using a classical model. Experimental data from the literature were fit to a theoretical expression for the Ar resonance charge exchange cross section over the same energy range. A model was developed that describes the processes of conical texturing of a surface due to simultaneous directed ion beam etching and sputter deposition of an impurity material. This model accurately predicts both a minimum temperature for texturing to take place and the variation of cone density with temperature. It also provides the correct order of magnitude of cone separation. It was predicted from the model, and subsequently verified experimentally, that a high sputter yield material could serve as a seed for coning of a lower sputter yield substrate. Seeding geometries and seed deposition rates were studied to obtain an important input to the theoretical texturing model.

Robinson, R. S.↗

NASA NTRS1989

Fundamental tribological properties of ion-beam-deposited boron nitride films

The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

Miyoshi, Kazuhisa↗

NASA NTRS1990

Fundamental tribological properties of ion-beam-deposited boron nitride films

Miyoshi, K.↗

NASA NTRS1980

Energetic /approximately 100-keV/ tailward-directed ion beam outside the Jovian plasma boundary

The hot plasma instrument on the Voyager-2 spacecraft measured a nearly monoenergetic (100 keV) ion beam several hours after crossing the Jovian plasma boundary on the nightside of the planet. The beam, deduced to consist primarily of heavy ions, persisted for about four hours and originated from the general direction of Jupiter. The energy density of the beam was about several times the energy density of the magnetic field (beta greater than 1). This beam, a product of an as yet not understood Jovian plasma acceleration mechanism, provides a dramatic example of the energetic dynamics of Jupiter's magnetosphere.

Krimigis, S. M.↗

NASA NTRS1980

Ion-beam etching enhances adhesive bonding

Metals and fluoropolymers exposed to 0.5 to 1.0 keV argon ions at current densities of 0.2 to 1.5 mA/sq cm develop surface texturing that increases tensile and shear strength of epoxy bonds. Bonds are 46 to 100 percent stronger than those of chemically etched surfaces. Metals require 3 to 4 hours of bombardment to become properly textured. Fluoropolymers require 5 seconds to 30 minutes. Ion beam will not texture nickel. Unlike chemical treatments, bonding of fluoropolymers can be done days or months after ion treatment.

Banks, B. A.↗

NASA NTRS1984

Ion beam accelerator system

A system is described that combines geometrical and electrostatic focusing to provide high ion extraction efficiency and good focusing of an accelerated ion beam. The apparatus includes a pair of curved extraction grids (16, 18) with multiple pairs of aligned holes positioned to direct a group of beamlets (20) along converging paths. The extraction grids are closely spaced and maintained at a moderate potential to efficiently extract beamlets of ions and allow them to combine into a single beam (14). An accelerator electrode device (22) downstream from the extraction grids, is at a much lower potential than the grids to accelerate the combined beam.

Aston, Graeme↗

NASA NTRS1989

Variable-Energy Ion Beams For Modification Of Surfaces

Beam of low-energy negative oxygen ions used to grow layer of silicon dioxide on silicon. Beam unique both in purity, contains no molecular oxygen or other charged species, and in low energy, which is insufficient to damage silicon by physically displacing atoms. Low-energy growth accomplished with help of ion-beam apparatus. Directs electrons into crosswise stream of gas, generating stream of negative ions. Pair of charged plates separates ions from accompanying electrons and diverts ion beam to target - silicon substrate. Diameter of beam at target 0.5 to 0.75 cm. Promises useful device to study oxidation of semiconductors and, in certain applications, to replace conventional oxidation processes.

Chutjian, Ara↗

NASA NTRS1981

Hydrogenated amorphous silicon deposited by ion-beam sputtering

Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

Lowe, V. E.↗

NASA NTRS1971

Cancellation of slit-width and doppler broadening effects in the spectroscopy of fast ion beams

Spectrometer slit-width cancellation by Doppler shift of light emission by fast ion beams, resulting in spectral lines increased intensities

Leavitt, J. A.↗

NASA NTRS2000

Range and Energy Straggling in Ion Beam Transport

A first-order approximation to the range and energy straggling of ion beams is given as a normal distribution for which the standard deviation is estimated from the fluctuations in energy loss events. The standard deviation is calculated by assuming scattering from free electrons with a long range cutoff parameter that depends on the mean excitation energy of the medium. The present formalism is derived by extrapolating Payne's formalism to low energy by systematic energy scaling and to greater depths of penetration by a second-order perturbation. Limited comparisons are made with experimental data.

Wilson, John W.↗