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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Study of GaAs-oxide interface by transient capacitance spectroscopy - Discrete energy interface states

Interface states and bulk GaAs energy levels were simultaneously investigated in GaAs MOS structures prepared by anodic oxidation. These two types of energy levels were successfully distinguished by carrying out a comparative analysis of deep level transient capacitance spectra of the MOS structures and MS structures prepared on the same samples of epitaxially grown GaAs. The identification and study of the interface states and bulk levels was also performed by investigating the transient capacitance spectra as a function of the filling pulse magnitude. It was found that in the GaAs-anodic oxide interface there are states present with a discrete energy rather than with a continuous energy distribution. The value of the capture cross section of the interface states was found to be 10 to the 14th to 10 to the 15th/sq cm, which is more accurate than the extremely large values of 10 to the -8th to 10 to the -9th/sq cm reported on the basis of conductance measurements.

Kamieniecki, E.↗
NASA NTRS1987

Media independent interface. Interface control document

A Media Independent Interface (MII) is specified, using current standards in the industry. The MII is described in hierarchical fashion. At the base are IEEE/International Standards Organization (ISO) documents (standards) which describe the functionality of the software modules or layers and their interconnection. These documents describe primitives which are to transcent the MII. The intent of the MII is to provide a universal interface to one or more Media Access Contols (MACs) for the Logical Link Controller and Station Manager. This interface includes both a standardized electrical and mechanical interface and a standardized functional specification which defines the services expected from the MAC.

Source record↗
NASA NTRS1988

Interfaces in polymer, ceramic, and metal matrix composites; Proceedings of the Second International Conference on Composite Interfaces (ICCI-II), Cleveland, OH, June 13-17, 1988

The present conference on interfacial factors in advanced composite materials discusses such topics in their development status and properties as silane coupling, the electrochemical and plasma-surface treatment of carbon fibers, fiber surface-analytical techniques, polymer molecular scale characterization by atom-probe field-ion microscopy, the study of carbon fiber-epoxy resin interface interactions by means of labeling techniques, and the surface tailoring of SiC by ion implantation. Also discussed are developments in laser light-scattered photoelasticity, microstructural evolutions under heat treatment and radiation damage, TEM for composites, the interfaces of carbon fiber-reinforced Al composites, the influence of the interface on macroscopic composite properties, and the status of the theoretical understanding of composite interfaces.

Ishida, Hatsuo↗
NASA NTRS2006

Network device interface for digitally interfacing data channels to a controller via a network

The present invention provides a network device interface and method for digitally connecting a plurality of data channels, such as sensors, actuators, and subsystems, to a controller using a network bus. The network device interface interprets commands and data received from the controller and polls the data channels in accordance with these commands. Specifically, the network device interface receives digital commands and data from the controller, and based on these commands and data, communicates with the data channels to either retrieve data in the case of a sensor or send data to activate an actuator. Data retrieved from the sensor is then converted into digital signals and transmitted back to the controller. In one embodiment, the bus controller sends commands and data a defined bit rate, and the network device interface senses this bit rate and sends data back to the bus controller using the defined bit rate.

Ellerbrock, Philip J.↗
NASA NTRS2009

Network device interface for digitally interfacing data channels to a controller via a network

A communications system and method are provided for digitally connecting a plurality of data channels, such as sensors, actuators, and subsystems, to a controller using a network bus. The network device interface interprets commands and data received from the controller and polls the data channels in accordance with these commands. Specifically, the network device interface receives digital commands and data from the controller, and based on these commands and data, communicates with the data channels to either retrieve data in the case of a sensor or send data to activate an actuator. Data retrieved from the sensor is converted into digital signals and transmitted to the controller. Network device interfaces associated with different data channels can coordinate communications with the other interfaces based on either a transition in a command message sent by the bus controller or a synchronous clock signal.

Ellerbrock, Philip J.↗
DOE OSTI2015

Enhanced Local Magnetization by Interface Engineering in Perovskite-Type Correlated Oxide Heterostructures

Elimination of a magnetic dead-layer at the LSMO/STO interface is achieved by interface engineering through incorporation of a single La 0.33 Sr 0.67 O layer. Further, controlled growth of interfacial atomic stacking in combination with local magnetic probing by polarized neutron reflectometry enables controlled interface engineering and results in optimal interfacial magnetization in perovskite-type correlated oxide heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Precipitation behavior of Widmanstätten O phase associated with interface in aged Ti2AlNb-based alloys

Highlights: • Ball milling tunes the morphology of primary O phase in Ti{sub 2}AlNb alloys. • The interface of Widmanstatten B2 and O affects the hardness of the alloys. • The entire precipitation process of Widmanstatten O phase is reported. - Abstract: Ti{sub 2}AlNb-based alloys, spark plasma sintered from ball-milled octahedral Ti-22Al-25Nb powder, are aged for 0–3 h in this study. Ball milling tunes the morphology of primary orthorhombic (O) phase to be columnar, and improves the mechanical properties of the alloys. The evolution of the Widmanstätten O phase, which brought main precipitation strengthening effect, is then investigated during the ageing process. The hardness of the alloys is improved by an increasing content of O phase and the reduced width of the Widmanstätten O phase; in addition, the length of Widmanstätten O phase also brings positive effect on the hardness, which indicates that the hardness is strongly coupled with the interface of the Widmanstätten O precipitates and B2 matrix. By means of transmission electron microscopy observation, the precipitation of O initials with an amorphous state, followed by a coherent interface between (110){sub B2} and (002){sub O}, which is destroyed to be semi-coherent and incoherent during the next ageing stage.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Concentration Dependent Interfacial Chemistry of the NaOH(aq):Gibbsite Interface

Caustic conditions are often employed for dissolution of a wide variety of minerals, where ion sorption, surface diffusion, and interfacial organization impact surface reactivity. In the case of gibbsite, gamma-Al(OH)3, the chemistry at the NaOH(aq) interface is deeply intertwined with industrial processing of aluminum, including metal production and the disposition of Al-containing wastes. To date, little is known about the structure, speciation, and dynamic behavior of gibbsite interfaces (and that of many other minerals) with NaOH(aq)—particularly as a function of ionic strength. Yet concentration-dependent interfacial organization and dynamics are a critical starting point to develop a fundamental understanding of the factors that influence dissolution. This work reports equilibrium molecular dynamics simulations of the gamma-Al(OH)3:NaOH(aq) interface, revealing the sorption behavior and speciation of ions from 0.5–10 M [NaOH]. As inner-sphere complexes, Na+ primarily coordinates to the side of the gibbsite hexagonal cavities, while OH accepts hydrogen-bonding from the surface-OH groups. The mobility of inner-sphere Na+ and OH ions is significantly reduced due to a strong surface affinity in comparison to previous reports of NaCl, CaCl2, or BaCl2 electrolytes. At high [NaOH], contact ion pairing that is observed in the bulk solution is partially disrupted upon sorption to the gibbsite surface by the individual ion–surface interactions. The molecular-scale changes to surface speciation and competition between ion–surface vs. ion–ion interactions influence surface characterization of gibbsite and potential dissolution processes, providing a valuable baseline for starting conditions needed within future reactive molecular simulations.

alkaline solutions, IDREAM, gibbsite, molecular dy↗
DOE OSTI2011

Electrostatic carrier doping of GdTiO{sub 3}/SrTiO{sub 3} interfaces

Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO{sub 3}, and the band insulator SrTiO{sub 3} are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO{sub 3}/SrTiO{sub 3} interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO{sub 3} are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution, and the influence of different electrostatic boundary conditions are obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Interface boundary conditions for dynamic magnetization and spin wave dynamics in a ferromagnetic layer with the interface Dzyaloshinskii-Moriya interaction

In this work, we derive the interface exchange boundary conditions for the classical linear dynamics of magnetization in ferromagnetic layers with the interface Dzyaloshinskii-Moriya interaction (IDMI). We show that IDMI leads to pinning of dynamic magnetization at the interface. An unusual peculiarity of the IDMI-based pinning is that its scales as the spin-wave wave number. We incorporate these boundary conditions into an existing numerical model for the dynamics of the Damon-Eshbach spin wave in ferromagnetic films. IDMI affects the dispersion and the frequency non-reciprocity of the travelling Damon-Eshbach spin wave. For a broad range of film thicknesses L and wave numbers, the results of the numerical simulations of the spin wave dispersion are in a good agreement with a simple analytical expression, which shows that the contribution of IDMI to the dispersion scales as 1/L, similarly to the effect of other types of interfacial anisotropy. Suggestions to experimentalists how to detect the presence of IDMI in a spin wave experiment are given.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

The two-dimensional electron gas (2DEG) formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO{sub 3} (LAO) and non-polar SrTiO{sub 3} (STO). Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La{sub 0.5}Sr{sub 0.5}TiO{sub 3} (LSTO) layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2016

The use of haptic interfaces and web services in crystallography: an application for a `screen to beam' interface

Haptic interfaces have become common in consumer electronics. They enable easy interaction and information entry without the use of a mouse or keyboard. Our work illustrates the application of a haptic interface to crystallization screening in order to provide a natural means for visualizing and selecting results. By linking this to a cloud-based database and web-based application program interface, the same application shifts the approach from `point and click' to `touch and share', where results can be selected, annotated and discussed collaboratively. Furthermore, in the crystallographic application, given a suitable crystallization plate, beamline and robotic end effector, the resulting information can be used to close the loop between screening and X-ray analysis, allowing a direct and efficient `screen to beam' approach. The application is not limited to the area of crystallization screening; `touch and share' can be used by any information-rich scientific analysis and geographically distributed collaboration.

96 KNOWLEDGE MANAGEMENT AND PRESERVATION↗
DOE OSTI2012

Impact of Interface Recombination on Time Resolved Photoluminescence (TRPL) Decays in CdTe Solar Cells (Numerical Simulation Analysis): Preprint

Using Sentaurus Device Software, we analyze how bulk and interface recombination affect time-resolved photoluminescence (TRPL) decays in CdTe solar cells. This modeling analysis could improve the interpretation of TRPL data and increase the possibility of rapid defect characterization in thin-film solar cells. By illuminating the samples with photons of two different wavelengths, we try to deducethe spatial origin of the dominant recombination loss. Shorter-wavelength photons will be more affected by the interface recombination and drift compared to the longer ones. Using the two-wavelength TRPL characterization method, it may be possible to determine whether a specific change in deposition process has affected the properties of interface or the bulk of the absorber.

14 SOLAR ENERGY↗
DOE OSTI2015

X-ray-driven reaction front dynamics at calcite-water interfaces

The interface between minerals and aqueous solutions hosts globally important biogeochemical processes such as the growth and dissolution of carbonate minerals. Understanding such processes requires spatially and temporally resolved observations and experimental controls that precisely manipulate the interfacial thermodynamic state. Using the intense radiation fields of a focused synchrotron x-ray beam, we drove dissolution at the calcite/water interface and simultaneously probed the dynamics of the propagating reaction fronts using surface x-ray microscopy. Evolving surface structures were controlled by the time-dependent solution composition, as characterized by a kinetic reaction model. At extreme disequilibria, we observed the onset of reaction front instabilities with velocities of > 30 nanometers per second. These instabilities serve as a signature of transport-limited dissolution of calcite under extreme disequilibrium.

calcite-water interface↗