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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Electron-irradiation-induced Cr segregation in Fe-Cr model alloy pre-implanted with hydrogen ions

Highlights: • Streaks appeared in the diffraction patterns of hydrogen-implanted Fe-Cr alloy after electron irradiation in an HVEM. • A kind of needle-like Cr precipitates give rise to the streaks. • The streaks are explained reasonably by shape effect of precipitates. - Abstract: Reduced activation ferritic/martensitic (RAFM) steels are widely accepted as the candidate structural materials for fusion reactors. To gain knowledge about Cr behaviour of these steels in such environments, Fe-Cr binary alloys have to be investigated. In this study, Fe-10 at.% Cr ferritic model alloy pre-implanted with hydrogen ions was electron-irradiated in a high voltage electron microscope (HVEM) at the temperature ranging from 300 °C to 600 °C. Streaks were observed in the diffraction patterns in the model alloy after electron irradiation at 450–550 °C and explained reasonably by shape effect. The analysis of transmission electron microscopy (TEM) reveals that the observed streaks are induced by a kind of needle-like precipitates with the directions along <100>. The dependence of the length and density of the precipitates on the temperature were studied. In addition, contrast experiments were conducted with pure Fe and Fe-10 at.% Cr alloy with and without hydrogen ion implantation, respectively. After electron irradiation, no streak was observed in the hydrogen-implanted pure Fe and Fe-10 at.% Cr alloy without the hydrogen implantation. Therefore, it is assumed that the needle-like precipitates could be the complex of Cr and H, which segregate and precipitate along <100> direction.

36 MATERIALS SCIENCE↗
DOE OSTI2022

An implantable biomechanical energy harvester for animal monitoring devices

Insufficient service life and the resulting need for battery replacements have been a great challenge for implantable electronic devices. This is particularly true for animal tracking applications, because recapturing animals is often unlikely once they are released to the wild. To tackle this problem, we developed a biomechanical energy harvester that uses a Macro Fiber Composite™ (MFC) piezoelectric beam to harvest the mechanical energy from animals’ body bending movements as the power source for implantable and wearable devices. Prototypes of an underwater acoustic transmitter using this technology were subdermally implanted into juvenile white sturgeon and their energy harvesting performance was evaluated through the device’s transmissions. Additionally, the fish successfully recovered from the implantation surgery and freely swam inside a tank. The transmitter prototypes in the fish continually transmitted signals for a period up to 5 weeks. A benchtop test setup was also created to emulate the fish’s body bending, estimate the device’s energy harvesting performance in the live fish, and perform accelerated fatigue testing of the energy harvester by applying test parameters learned from a video study of the fish’s body movement and behavior characteristics. The gradual depolarization of the piezoelectric ceramic material in the MFC under cyclic mechanical loading was the main limiting factor for the life span of the energy harvester. Pathways for improvement are proposed to achieve long-term efficacy of powering implantable and wearable electronic devices.

42 ENGINEERING↗
DOE OSTI2019

Novel high-energy ion implantation facility using a 15 MV Tandem Van de Graaff accelerator

The implantation depths required for the development and fabrication of future generations of silicon carbide (SiC) semiconductor devices require ion energies that are well above the capabilities of most conventional ion implanters. To generate implantation profiles that extend from more than 10 μm to the surface of the wafer, a wide range of energy ions (kV to 10 s of MeV) is required. We developed a novel multi-energy implantation system that satisfies these requirements using heavy ion beams from one of the Brookhaven National Laboratory’s two 15 MV Tandem Van de Graaff accelerators. This system is described, including the dosimetry approach and the available ion species and intensities. Finally, an example of a measured implantation profiles in SiC is shown and compared to simulations.

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

Temperature dependence of helium-implantation-induced lattice swelling in polycrystalline tungsten: X-ray micro-diffraction and Eigenstrain modelling

Using synchrotron X-ray micro-diffraction and Eigenstrain analysis the distribution of lattice swelling near grain boundaries in helium-implanted polycrystalline tungsten is quantified. Samples heat-treated at up to 1473 K after implantation show less uniform lattice swelling that varies significantly from grain to grain compared to as-implanted samples. An increase in lattice swelling is found in the vicinity of some grain boundaries, even at depths beyond the implanted layer. As a result, these findings are discussed in terms of the evolution of helium-ion-implantation-induced defects.

36 MATERIALS SCIENCE↗
DOE OSTI2012

'Abnormal' angle response curves of TW/Rs for near zero tilt and high tilt channeling implants

Angle control has been widely accepted as the key requirement for ion implantation in semiconductor device processing. From an ion implanter point of view, the incident ion direction should be measured and corrected by suitable techniques, such as XP-VPS for the VIISta implanter platform, to ensure precision ion placement in device structures. So called V-curves have been adopted to generate the wafer-based calibration using channeling effects as the Si lattice steer ions into a channeling direction. Thermal Wave (TW) or sheet resistance (Rs) can be used to determine the minimum of the angle response curve. Normally it is expected that the TW and Rs have their respective minima at identical angles. However, the TW and Rs response to the angle variations does depend on factors such as implant species, dose, and wafer temperature. Implant damage accumulation effects have to be considered for data interpretation especially for some 'abnormal' V-curve data. In this paper we will discuss some observed 'abnormal' angle responses, such as a) TW/Rs reverse trend for Arsenic beam, 2) 'W' shape of Rs Boron, and 3) apparent TW/Rs minimum difference for high tilt characterization, along with experimental data and TCAD simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Maskless implants of 20 keV Ga{sup +} in thin crystalline silicon on insulator

A nano-sized ion beam apparatus has been used as maskless lithography to implant 20 keV Ga{sup +} ions into a 26 nm thick silicon crystalline film on insulator. The ion beam, with about 5 nm standard deviation, delivered few hundred ions during a single shot. Circular areas with nominal diameter of 20 or 50 nm were irradiated to a fluence of 5 Multiplication-Sign 10{sup 14}/cm{sup 2}. Transmission electron microscopy evidenced that the damaged regions are characterized by an irregular contour with many disordered filaments. Damage extends across the layer thickness and fast Fourier transform analysis indicates that implantation causes the amorphization of a region which extends beyond the nominal diameter. In situ annealing experiments demonstrated that the disordered filamentary regions disappear in the 250-450 Degree-Sign C temperature range and the interfaces with the surrounding crystalline regions sharpen. A temperature as high as 600 Degree-Sign C is required to fully re-crystallize the amorphous core of the implanted dots. Reordering occurs by multi-orientation lateral solid-phase epitaxial growth and the breaking of (111) and (101) interfaces, due to the formation of twins, triggers a fast crystallization kinetics. Rapid thermal annealing (890 Degree-Sign C-10 s) completely crystallizes the amorphous regions, twins are absent and small cluster of defects remains instead. Preliminary scanning capacitance measurements indicate that the implanted atoms, after crystallization, are electrically active. The implant method is then a viable processing step for the doping of non-bulk fully depleted ultra-thin-body MOSFET.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 Degree-Sign C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 Degree-Sign C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {l_brace}311{r_brace} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Simulation of ion beam transport through the 400 Kv ion implanter at Michigan Ion Beam Laboratory

The Michigan Ion Beam Laboratory houses a 400 kV ion implanter. An application that simulates the ion beam trajectories through the implanter from the ion source to the target was developed using the SIMION Registered-Sign code. The goals were to have a tool to develop an intuitive understanding of abstract physics phenomena and diagnose ion trajectories. Using this application, new implanter users of different fields in science quickly understand how the machine works and quickly learn to operate it. In this article we describe the implanter simulation application and compare the parameters of the implanter components obtained from the simulations with the measured ones. The overall agreement between the simulated and measured values of magnetic fields and electric potentials is {approx}10%.

43 PARTICLE ACCELERATORS↗
DOE OSTI2013

Reduction of phosphorus diffusion in germanium by fluorine implantation

The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of F{sub n}V{sub m} clusters in the F-amorphized Ge layer. A fraction of these F{sub n}V{sub m} clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 10{sup 14} to 1 × 10{sup 16 }cm{sup −2}. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 10{sup 15 }cm{sup −2} before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Fe ion-implanted TiO{sub 2} thin film for efficient visible-light photocatalysis

This work shows the application of metal ion-implantation to realize an efficient second-generation TiO{sub 2} photocatalyst. High fluence Fe{sup +} ions were implanted into thin TiO{sub 2} films and subsequently annealed up to 550 °C. The ion-implantation process modified the TiO{sub 2} pure film, locally lowering its band-gap energy from 3.2 eV to 1.6–1.9 eV, making the material sensitive to visible light. The measured optical band-gap of 1.6–1.9 eV was associated with the presence of effective energy levels in the energy band structure of the titanium dioxide, due to implantation-induced defects. An accurate structural characterization was performed by Rutherford backscattering spectrometry, transmission electron microscopy, Raman spectroscopy, X-ray diffraction, and UV/VIS spectroscopy. The synthesized materials revealed a remarkable photocatalytic efficiency in the degradation of organic compounds in water under visible light irradiation, without the help of any thermal treatments. The photocatalytic activity has been correlated with the amount of defects induced by the ion-implantation process, clarifying the operative physical mechanism. These results can be fruitfully applied for environmental applications of TiO{sub 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Nonlinear effects in defect production by atomic and molecular ion implantation

This report deals with studies concerning vacancy related defects created in silicon due to implantation of 200 keV per atom aluminium and its molecular ions up to a plurality of 4. The depth profiles of vacancy defects in samples in their as implanted condition are carried out by Doppler broadening spectroscopy using low energy positron beams. In contrast to studies in the literature reporting a progressive increase in damage with plurality, implantation of aluminium atomic and molecular ions up to Al{sub 3}, resulted in production of similar concentration of vacancy defects. However, a drastic increase in vacancy defects is observed due to Al{sub 4} implantation. The observed behavioural trend with respect to plurality has even translated to the number of vacancies locked in vacancy clusters, as determined through gold labelling experiments. The impact of aluminium atomic and molecular ions simulated using MD showed a monotonic increase in production of vacancy defects for cluster sizes up to 4. The trend in damage production with plurality has been explained on the basis of a defect evolution scheme in which for medium defect concentrations, there is a saturation of the as-implanted damage and an increase for higher defect concentrations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Measurement and image processing evaluation of surface modifications of dental implants G4 pure titanium created by different techniques

Foreign substances and organic tissue interaction placed into the jaw in order to eliminate tooth loss involves a highly complex process. Many biological reactions take place as well as the biomechanical forces that influence this formation. Osseointegration denotes to the direct structural and functional association between the living bone and the load-bearing artificial implant's surface. Taking into consideration of the requirements in the manufacturing processes of the implants, surface characterizations with high precise measurement techniques are investigated and thus long-term success of dental implant is emphasized on the importance of these processes in this study. In this research, the detailed surface characterization was performed to identify the dependence of the manufacturing techniques on the surface properties by using the image processing methods and using the scanning electron microscope (SEM) for morphological properties in 3D and Taylor Hobson stylus profilometer for roughness properties in 2D. Three implant surfaces fabricated by different manufacturing techniques were inspected, and a machined surface was included into the study as a reference specimen. The results indicated that different surface treatments were strongly influenced surface morphology. Thus 2D and 3D precise inspection techniques were highlighted on the importance for surface characterization. Different image analyses techniques such as Dark-light technique were used to verify the surface measurement results. The computational phase was performed using image processing toolbox in Matlab with precise evaluation of the roughness for the implant surfaces. The relationship between the number of black and white pixels and surface roughness is presented. FFT image processing and analyses results explicitly imply that the technique is useful in the determination of surface roughness. The results showed that the number of black pixels in the image increases with increase in surface roughness.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Peripheral white blood cells profile of biodegradable metal implant in mice animal model

Biocompatibility or safety of the medical device is considered important. It can be determined by blood profile examination. The aim of this study was to assess the biocompatibility of biodegradable metal implant through peripheral white blood cells (WBCs) profile approach. Forty eight male ddy mice were divided into four groups according to the materials implanted: iron wire (Fe), magnesium rod (Mg), stainless steel surgical wire (SS316L) and control with sham (K). Implants were inserted and attached onto the right femoral bone on latero-medial region. In this study, peripheral white blood cells and leukocyte differentiation were the parameters examined. The result showed that the WBCs value of all groups were decreased at the first day after implantation, increased at the 10th day and continued increasing at the 30th day of observation, except Mg group which has decreased. Neutrophil, as an inflammatory cells, was increased at the early weeks and decreased at the day-30 after surgery in all groups. Despite, these values during the observation were still within the normal range. As a conclus ion, biodegradable metal implants lead to an inflammatory reaction, with no adverse effect on WBC value found.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

Grain size effect on yield strength of titanium alloy implanted with aluminum ions

The paper presents a transmission electron microscopy (TEM) study of the microstructure and phase state of commercially pure titanium VT1-0 implanted by aluminum ions. This study has been carried out before and after the ion implantation for different grain size, i.e. 0.3 µm (ultra-fine grain condition), 1.5 µm (fine grain condition), and 17 µm (polycrystalline condition). This paper presents details of calculations and analysis of strength components of the yield stress. It is shown that the ion implantation results in a considerable hardening of the entire thickness of the implanted layer in the both grain types. The grain size has, however, a different effect on the yield stress. So, both before and after the ion implantation, the increase of the grain size leads to the decrease of the alloy hardening. Thus, hardening in ultra-fine and fine grain alloys increased by four times, while in polycrystalline alloy it increased by over six times.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Microstructure and oxidation behavior of high strength steel AISI 410 implanted with nitrogen ion

Surface treatment by implantation with nitrogen-ion was performed on the commercial feritic high strength steel AISI 410 which is termed for high temperature applications. The aim of this research was focused on the surface modification to improve its high temperature oxidation property in the early stages. Ion implantation was carried out at acceleration energy of 100 KeV and ion current 10 mA for 30, 60 and 90 minutes. The samples were subjected to the high temperature oxidation test by means of thermogravimetry in a magnetic suspension balance (MSB) at 500 °C for 5 hours. The scanning electron microscopy (SEM), X-ray diffraction spectrometry (XRD) and Vickers Hardness measurement were used for sample characterization. The formation of ferro-nitride phase after implantation did not occur, however a thin layer considered to contain nitrogen interstitials was detected. The oxidation of both samples before and after implantation followed parabolic kinetics indicating inward growth of oxide scale characteristically due to diffusion of oxygen anions towards matrix surface. After oxidation test relativelly stable oxide scales were observed. Oxidation rates decreased proportionally with the increasing of implantation time due to the formation of oxide layer which is considered to be effectiv inhibitor for the oxygen diffusion.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Distribution of species and Ga–N bonds in silicon co-implanted with gallium and nitrogen ions

The concentration profiles of species in silicon subjected to gallium and nitrogen co-implantation and subsequent annealing have been investigated by the method of X-ray photoelectron spectroscopy combined with the layer-by-layer ion etching of the implanted layer. It is shown that practically entire implanted gallium undergoes out-diffusion, but the preliminary implantation of nitrogen for the synthesis of a barrier SiN{sub x} layer makes it possible to avoid the essential loss of gallium. In this case, about 14 % of implanted gallium bond to nitrogen. The obtained data are discussed from the viewpoint of the possibility of ion synthesis of GaN inclusions in silicon matrix.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant

Here, the selective amorphization of SiGe in Si/SiGe nanostructures via a 1 MeV Si + implant was investigated, resulting in single-crystal Si nanowires (NWs) and quantum dots (QDs) encapsulated in amorphous SiGe fins and pillars, respectively. The Si NWs and QDs are formed during high-temperature dry oxidation of single-crystal Si/SiGe heterostructure fins and pillars, during which Ge diffuses along the nanostructure sidewalls and encapsulates the Si layers. The fins and pillars were then subjected to a 3 × 10 15 ions/cm 2 1 MeV Si + implant, resulting in the amorphization of SiGe, while leaving the encapsulated Si crystalline for larger, 65-nm wide NWs and QDs. Interestingly, the 26-nm diameter Si QDs amorphize, while the 28-nm wide NWs remain crystalline during the same high energy ion implant. This result suggests that the Si/SiGe pillars have a lower threshold for Si-induced amorphization compared to their Si/SiGe fin counterparts. However, Monte Carlo simulations of ion implantation into the Si/SiGe nanostructures reveal similar predicted levels of displacements per cm 3 . Molecular dynamics simulations suggest that the total stress magnitude in Si QDs encapsulated in crystalline SiGe is higher than the total stress magnitude in Si NWs, which may lead to greater crystalline instability in the QDs during ion implant. The potential lower amorphization threshold of QDs compared to NWs is of special importance to applications that require robust QD devices in a variety of radiation environments.

36 MATERIALS SCIENCE↗