An investigation of the effects of radiation on silicon nitride insulated gate /MNS/ transistors Final report
Radiation effects on silicon nitride insulated gate field effect transistors
Frank, R.↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Diagnosis of single-gate failures in combinational circuits.
Arbitrary single gate failures diagnosis in combinational logic circuits not requiring fault table construction
Hornbuckle, G. D.↗
Nonlinear analysis of an absolute value type of early-late-gate bit synchronizer.
Absolute value type of early-late gate bit synchronizer phase noise performance determined by Fokker-Planck method, comparing results with different circuits performance
Simon, M. K.↗
False high gate targeting for LM powered descent
False high gate targeting for lunar module powered descent
Mc Swain, G.↗
Feasibility investigation of insulated-gate field-effect transistors fabricated by techniques compatible with thick-film technology
Low temperature semiconductor deposition techniques in fabricating thick film, insulated gate, field effect transistors
Baxter, R. D.↗
Inexpensive photon counting system with internal gate generator
Preamplifier-discriminator-gate generator in printed circuit for use with photomultipliers, noting pulse sensitivity and cost
Born, J.↗
Thin high-vacuum gate valve
Thin high vacuum gate valve design for use with UV grating spectrograph
Ugiansky, R. J.↗
Wall attachment, flueric crossover ''AND'' gate
Gate performance is not adversely affected by normal dimensional variations encountered in fabrication and it operates throughout full loading range. Flow from one control must be sufficiently monostable to allow initial attachment and upon switching, return to outer wall. Venting must be adequate.
Hellbaum, R. F.↗
Ultrathin gate valve for high vacuum operation
Thin, compact, high-vacuum gate valve used to join two vacuum systems together demonstrates multiple operation reliability. Valve measurements and non-protruding handle make valve usable in confined areas.
Ugiansky, R. J.↗
A low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transitors Final engineering report
Low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transistors
Source record↗
Monostable multivibrator with complementary NOR gates Patent
Monostable multivibrator for producing output pulse widths with positive feedback NOR gates
Oneill, R. W.↗
Nonlinear analysis of an absolute value type of an early-late gate bit synchronizer
Absolute value type early-late gate bit synchronizer steady state phase noise performance evaluation by Fokker-Planck method
Simon, M. K.↗
The application of an analog computer for the determination of charge centers in the gate structure of the variable threshold FET
Analog computer application for determination of charge centers in multilayer gate structure of variable threshold FET, deriving equations yielding position of internally stored charge
Lewis, E. T.↗
Gate protective device for SOS array
Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.
Meyer, J. E., Jr.↗
Experiment M405: Tri-axis flux gate magnetometer
A tri-axis flux-gate magnetometer was used on four Gemini spacecraft for determination of the magnitude and direction of the local geomagnetic field with respect to the spacecraft. Conclusions derived from the data are not only important to the proton-electron spectrometer experiment, but also are of significance to any directional charged particle experiments that may be conducted. Even though the Gemini spacecraft was not clean magnetically, the data could be reduced to a form that supplied directional information on the magnetic field in relation to the spacecraft. Stray fields were the result of spacecraft structure, not the result of current flows that were produced within the spacecraft electrical systems. Efforts were made to reduce spacecraft stray fields and to facilitate the acquisition of more accurate data.
Womack, W. D.↗
Current conduction in junction gate field effect transistors
The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.
Kim, C.↗
Development of high speed power thyristor: The gate assisted turn-off thyristor
A high speed power switch with unique turn-off capability was developed. This gate-assisted turn-off thyristor was rated at 609 V and 50 A with turn-off times of 2 microsec. Twenty-two units were delivered for evaluation in a series inverter circuit. In addition, test circuits designed to relate to the series inverter application were built and demonstrated.
Hamilton, D. R.↗