SEARCH · Engineering Papers

Results for “GAN”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11

All sources NASA NTRS DOE OSTI

DOE OSTI2022

Nano-porous GaN cladding and scattering loss in edge emitting laser diodes

We report continuous wave operation of electrically injected InGaN laser diodes using nano-porous GaN n-side cladding with 33% porosity. At 454 nm emission wavelength, the pulsed injection slope efficiency is 0.24 W/A with a high loss of 82 cm -1 . The considerable 60 cm -1 of excess loss of the nano-porous clad lasers is attributed to scattering at pores in unintentionally 3% porosified layers, supported by numerical modeling. Simulations comparing porous GaN cladding to AlInN cladding for lasers operating at 589 nm indicate that the porous cladding provides similar internal loss and lower thermal impedance.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Green edge emitting lasers with porous GaN cladding

GaN lasers with green emission wavelength at λ = 510 nm have been fabricated using novel nano-porous GaN cladding under pulsed electrical injection. The low slope efficiency of 0.13 W/A and high threshold current density of 14 kA/cm 2 are related to a combination of poor injection efficiency and high loss, analyzed by the independent characterization methods of variable stripe length and segmented contacts. Continuous wave operation showed narrowed spectra and augmented spontaneous emission.

47 OTHER INSTRUMENTATION↗

DOE OSTI2025

Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance

This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhancing survivability in high-radiation environments. Key findings emphasize the gate region’s central role in radiation sensitivity, with increased defect concentrations leading to reduced sensitivity—as determined from reduced single-event transient intensities during pulsed-laser studies—and impacting charge-transport dynamics. Notably, the most sensitive region shifted as a function of bias state, with the drain side of the gate being most sensitive under negative gate bias and the source side under unbiased conditions due to two-dimensional electron gas disruptions. These insights clarify the mechanisms influencing radiation sensitivity in microelectronics and highlight the potential of defect and strain engineering to enhance the radiation hardness of GaN HEMTs across various operational states, providing valuable guidance for applications in space, defense, and other radiation-rich environments.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Simultaneous prediction of structural properties in epitaxially–grown GaN with quantum and conventional multi–output learning algorithms

Hundreds of GaN thin film crystal plasma–assisted molecular beam epitaxy synthesis experiment records spanning two decades were organized into a dataset correlating the growth experiment design parameters with discrete, binary determinations of crystallinity and surface morphology. Conventional data science techniques as well as both quantum and classical multi–output supervised machine learning algorithms were implemented to investigate the relationships between the operating parameter data and the structural figures of merit. Correlation coefficients, decision tree nodes, p–values, and SHAP values all support substrate temperature and gallium effusion cell conditions as being statistically significant for simultaneously influencing GaN crystallinity and surface morphology. Here, a conventional deep neural network learned best from the data, followed by a quantum–classical hybrid gradient boosting algorithm. When combined with calculations of uncertainty intervals based on VennAbers predictors, machine learning predictions of both structural properties show good agreement with results reported in published experimental literature.

36 MATERIALS SCIENCE↗

DOE OSTI2023

EPiC-GAN: Equivariant point cloud generation for particle jets

With the vast data-collecting capabilities of current and future high-energy collider experiments, there is an increasing demand for computationally efficient simulations. Generative machine learning models enable fast event generation, yet so far these approaches are largely constrained to fixed data structures and rigid detector geometries. In this paper, we introduce EPiC-GAN - equivariant point cloud generative adversarial network - which can produce point clouds of variable multiplicity. This flexible framework is based on deep sets and is well suited for simulating sprays of particles called jets. The generator and discriminator utilize multiple EPiC layers with an interpretable global latent vector. Crucially, the EPiC layers do not rely on pairwise information sharing between particles, which leads to a significant speed-up over graph- and transformer-based approaches with more complex relation diagrams. We demonstrate that EPiC-GAN scales well to large particle multiplicities and achieves high generation fidelity on benchmark jet generation tasks.

Buhmann, Erik↗

DOE OSTI2025

Synthetic Scientific Image Generation with VAE, GAN, and Diffusion Model Architectures

Generative AI (genAI) has emerged as a powerful tool for synthesizing diverse and complex image data, offering new possibilities for scientific imaging applications. This review presents a comprehensive comparative analysis of leading generative architectures, ranging from Variational Autoencoders (VAEs) to Generative Adversarial Networks (GANs) on through to Diffusion Models, in the context of scientific image synthesis. We examine each model's foundational principles, recent architectural advancements, and practical trade-offs. Our evaluation, conducted on domain-specific datasets including microCT scans of rocks and composite fibers, as well as high-resolution images of plant roots, integrates both quantitative metrics (SSIM, LPIPS, FID, CLIPScore) and expert-driven qualitative assessments. Results show that GANs, particularly StyleGAN, produce images with high perceptual quality and structural coherence. Diffusion-based models for inpainting and image variation, such as DALL-E 2, delivered high realism and semantic alignment but generally struggled in balancing visual fidelity with scientific accuracy. Importantly, our findings reveal limitations of standard quantitative metrics in capturing scientific relevance, underscoring the need for domain-expert validation. We conclude by discussing key challenges such as model interpretability, computational cost, and verification protocols, and discuss future directions where generative AI can drive innovation in data augmentation, simulation, and hypothesis generation in scientific research.

Generative Adversarial Networks↗

DOE OSTI2022

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Here we report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm 2 . The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV cm –1 . These results underline that high-performance GaN JBS can be realized using Mg implantation and high-temperature UHP post-activation anneal.

42 ENGINEERING↗

NASA NTRS1973

GaN for LED applications

In order to improve the synthesis of GaN the effect of various growth and doping parameters has been studied. Although Be, Li, Mg, and Dy can be used to overcompensate native donors, the most interesting acceptor element is Zn. The emission spectrum and the luminescence efficiency depend on the growth temperature (below 800 C), on the partial pressure of the doping impurity, and on the duration of growth. Blue-green electroluminescence with a power efficiency of 0.1 percent and a brightness of 850 fL (at 0.6 mA and 22.5 V) was obtained. Some diodes allow the color of the emitted light to change by reversing the polarity of the bias. Continuous operation of a diode over a period of 5 months showed no evidence of degradation. The luminescence properties of ion-implanted GaN were studied. Delay effects were found in the electroluminescence of diodes, although, with a dc bias, a 70-MHz modulation was possible.

Pankove, J. I.↗

NASA NTRS1978

Properties of GaN grown on sapphire substrates

Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.

Crouch, R. K.↗

NASA NTRS2001

Determination of a Two-Phase Structure of Nanocrystals: GaN and SiC

The properties of nano-crystalline materials are critically dependent on the structure of the constituent grains. Experimental conditions necessary to perform structural analysis of nanocrystalline materials as a two-phase core-surface shell system are discussed. It is shown, that a standard X-ray diffraction measurements and analysis are insufficient and may lead to incorrect conclusions as to the real structure of the materials. A new method of evaluation of powder diffraction data based on the analysis of the shift of the Bragg reflections from their perfect-lattice positions was developed. "Apparent lattice parameters" quantity, alp, was introduced and calculated from the actual positions of each individual Bragg reflection. The alp values plotted versus diffraction vector (Q) show characteristic features that are used for evaluation of the experimental results. The study was based on modeling of nano-grains and simulations of theoretical intensity profiles using the Debye functions. The method was applied to the analysis of synchrotron X-ray diffraction data of GaN and SiC nanocrystals. A presence of strained surface shell and a considerable internal pressure (GaN) in the nanoparticles was concluded.

Palosz, W.↗

NASA NTRS2011

Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

Future remote sensing instruments will require focal plane spectrometer arrays with higher resolution at high frequencies. One of the major components of spectrometers are the local oscillator (LO) signal sources that are used to drive mixers to down-convert received radio-frequency (RF) signals to intermediate frequencies (IFs) for analysis. By advancing LO technology through increasing output power and efficiency, and reducing component size, these advances will improve performance and simplify architecture of spectrometer array systems. W-band power amplifiers (PAs) are an essential element of current frequency-multiplied submillimeter-wave LO signal sources. This work utilizes GaN monolithic millimeter-wave integrated circuit (MMIC) PAs developed from a new HRL Laboratories LLC 0.15- m gate length GaN semiconductor transistor. By additionally waveguide power combining PA MMIC modules, the researchers here target the highest output power performance and efficiency in the smallest volume achievable for W-band.

Fung, King Man↗

NASA NTRS2012

Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

high-power amplifier (HPA)↗

NASA NTRS2017

Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitrate (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6, and Drain Efficiency (DE) of 48.9 under continuous wave (CW) operation.

Cognitive↗

NASA NTRS2020

A GaN-based Four-Switch Buck-Boost Converter using Ripple Correlation Control for Maximum Power Point Tracking in Dynamic Deep Space Environments

As the demand for high-performance power conversion in spacecraft continues to grow and spacecraft mass and volume budgets become increasingly tight, it is essential to design DC-DC converters with higher efficiency and power density. Although photovoltaic (PV) efficiency has increased over time, solar irradiance and temperatures can fluctuate dramatically in deep space. This causes significant variations in the maximum power point (MPP) of the PV array, which can decrease the overall system efficiency unless accounted for. Thus, it is imperative to track the MPP of the PV panels to maintain optimal efficiency. This paper presents the experimental development of a four-switch, GaN-based buck-boost converter with an implementation of the Ripple Correlation Control (RCC) MPPT algorithm for dynamic deep space environments. Due to the use of GaN HEMTs, the experimental system achieves better efficiency and power density compared to the previous state of the art implementations. A simulation of the prototype buck-boost converter was implemented in SaberRD (Synopsis), and a digital design of the RCC-based MPPT controller utilizing the StateAMS tool is presented. The simulation results show that this controller swiftly and precisely converged to the MPP of the source PV panels in a dynamic solar irradiance condition.

Mahmud, Sadab↗

DOE OSTI2022

GANISP: A GAN-Assisted Importance Splitting Probability Estimator

Designing manufacturing processes with high yield and strong reliability relies on effective methods for rare event estimation. Genealogical importance splitting reduces the variance of rare event probability estimators by iteratively selecting and replicating realizations that are headed towards a rare event. The replication step is difficult when applied to deterministic systems where the initial conditions of the offspring realizations need to be modified. Typically, a random perturbation is applied to the offspring to differentiate their trajectory from the parent realization. However, this random perturbation strategy may be effective for some systems while failing for others, preventing variance reduction in the probability estimate. This work seeks to address this limitation using a generative model such as a Generative Adversarial Network (GAN) to generate perturbations that are consistent with the attractor of the dynamical system. The proposed GAN-assisted Importance SPlitting method (GANISP) improves the variance reduction for the system targeted. An implementation of the method is available in a companion repository (https://github.com/NREL/GANISP).

generative adversarial network↗

DOE OSTI2022

GANISP: A GAN-Assisted Importance Splitting Probability Estimator: Preprint

To reduce the variance of rare event probability estimator, genealogical importance splitting marches towards a rare event by iteratively selecting and replicating realizations that are headed towards a rare event. The replication step is made difficult when applied to deterministic systems as the initial conditions of the offspring realizations need to be modified. Typically, a random perturbation is applied to the offspring to differentiate their trajectory from the parent realization. It is shown that a random perturbation strategy may be effective for some systems but may also fail for others, thereby preventing variance reduction in the probability estimate. To address this limitation, it is proposed to use a generative model such as a Generative Adversarial Network (GAN) to generate perturbations that are consistent with the attractor of the dynamical system. The GAN-assisted Importance SPlitting method (GANISP) improves the variance reduction for the system targeted. An implementation of the method is available in a companion repository (https://github.com/NREL/GANISP).

generative adversarial network↗

DOE OSTI2026

Propulsion System Design using a Dual 3-Phase PM Synchronous Reluctance Machine with X-Type Multi-Level GaN Inverter

— A propulsion system design is exhibited here that comprises of an X-type GaN power module based dual multi-level inverter and a PM Synchronous Reluctance motor. With the critical benefits of multi-level operation, namely low common mode EMI noise, low switching loss, low current Total Harmonic Distortion (THD), smoother torque and lower iron loss, this topology targets high system-level efficiency and high power density while using reduced rare earth (RE) elements in its motor. General Motors and Purdue University jointly designed and developed this 800V class, highly scalable traction drive that can deliver 200+ kW of power suitable for C-SUV to truck vehicle class. The 3-phase electric machine design utilizes dual winding with 6 terminals to work in line with the GaN X-type inverter, and results in a tractive solution that ensures higher machine efficiency while reducing cost and uncertainty related to use and availability of heavy rare earth/rare earth elements in its rotor.

MOMEN, FAIZUL [General Motors LLC, Detroit, MI (Un↗

DOE OSTI2023

A riming‐dependent parameterization of scattering by snowflakes using the self‐similar Rayleigh–Gans approximation

Abstract Riming is a key process of precipitation formation in ice‐containing clouds, but quantifying riming from observations is challenging, limiting our ability to evaluate the riming process in numerical weather models. One challenge for radar observations is that riming changes both the physical properties (mass, area cross‐section) and scattering properties of ice particles. These changes need to be implemented consistently as a function of riming in radar forward operators, which are required for retrievals and model evaluation in observation space. In this study, mass–size, cross‐section area–size, and backscattering cross‐section relations are developed as a function of the normalized rime mass for aggregates composed of various monomer types (columns, dendrites, needles, plates, and rosettes). The proposed framework allows us to simulate scattering properties of aggregated ice particles consistently as a function of riming in retrievals and radar forward operators. The parameterizations are developed from a large data set of simulated rimed aggregates of different sizes and monomer crystal types. The backscattering cross‐section parameterization (the “riming‐dependent parameterization”) is evaluated for radar frequencies of 35.6 and 94.0 GHz and is based on the Self‐Similar Rayleigh–Gans approximation (SSRGA), which is increasingly used to calculate microwave scattering of ice crystals and snowflakes. Compared with parameterizations from the literature that do not consider riming, the riming‐dependent parameterization leads to significantly smaller biases in terms of backscattering cross‐section. When using the particle masses and scattering properties of the individual particles simulated by the aggregation and riming model as a reference, the bias of our parameterization is below 1 dB when integrating over an exponential particle size distribution with sizes from 0.1–10 mm.

54 ENVIRONMENTAL SCIENCES↗