SEARCH · Engineering Papers

Results for “FERROMAGNETIC MATERIALS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11

All sources NASA NTRS DOE OSTI

DOE OSTI2015

Dynamical spin injection at a quasi-one-dimensional ferromagnet-graphene interface

We present a study of dynamical spin injection from a three-dimensional ferromagnet into two-dimensional single-layer graphene. Comparative ferromagnetic resonance (FMR) studies of ferromagnet/graphene strips buried underneath the central line of a coplanar waveguide show that the FMR linewidth broadening is the largest when the graphene layer protrudes laterally away from the ferromagnetic strip, indicating that the spin current is injected into the graphene areas away from the area directly underneath the ferromagnet being excited. Our results confirm that the observed damping is indeed a signature of dynamical spin injection, wherein a pure spin current is pumped into the single-layer graphene from the precessing magnetization of the ferromagnet. The observed spin pumping efficiency is difficult to reconcile with the expected backflow of spins according to the standard spin pumping theory and the characteristics of graphene, and constitutes an enigma for spin pumping in two-dimensional structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Detecting low concentrations of plutonium hydride with magnetization measurements

We report the formation of plutonium hydride in 2 at. % Ga-stabilized δ-Pu, with 1 at. % H charging. We show that magnetization measurements are a sensitive, quantitative measure of ferromagnetic plutonium hydride against the nonmagnetic background of plutonium. It was previously shown that at low hydrogen concentrations, hydrogen forms super-abundant vacancy complexes with plutonium, resulting in a bulk lattice contraction. Here, we use magnetization, X-ray, and neutron diffraction measurements to show that in addition to forming vacancy complexes, at least 30% of the H atoms bond with Pu to precipitate PuH{sub x} on the surface of the sample with x ∼ 1.9. We observe magnetic hysteresis loops below 40 K with magnetic remanence, consistent with ferromagnetic PuH{sub 1.9}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Modulated ferromagnetic ordering and the magnetocaloric response of Eu{sub 4}PdMg

Neutron powder diffraction confirms that the primary ordering mode in Eu{sub 4}PdMg is ferromagnetic with a europium moment of 6.5(2) μ{sub B}. {sup 151}Eu Mössbauer spectroscopy shows that the unusual linear temperature dependence of the magnetisation reported for this system is an intrinsic property and not an artefact of the applied field. The form and temperature evolution of the {sup 151}Eu Mössbauer spectra strongly suggest that there is an incommensurate modulation to the magnetic structure that modifies the basic ferromagnetic order. This modulated structure may be the origin of the broad magnetocaloric response previously observed in Eu{sub 4}PdMg.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Irreversible electrical manipulation of magnetization on BiFeO{sub 3}-based heterostructures

We prepared several heterostructures, Co/Bi{sub 0.90}La{sub 0.10}FeO{sub 3} on surface oxidized Si or (111) SrTiO{sub 3} and NiFe/Bi{sub 0.90}La{sub 0.10}FeO{sub 3} on (001) SrTiO{sub 3} substrates using LaNiO{sub 3} as bottom electrode. With different strategies of voltage application, the exchange bias field H{sub E} decreased with increasing voltage irreversibly for all the heterostructures at room temperature. The chemical state at the NiFe/Bi{sub 0.90}La{sub 0.10}FeO{sub 3} interface was studied by X-ray photoelectron spectroscopy before and after the electrical manipulation. The oxidization of the metallic ferromagnetic layer at interface after the electrical manipulation has been confirmed, which might explain the irreversibility.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

The magnetic particle in a box: Analytic and micromagnetic analysis of probe-localized spin wave modes

The dipole field from a probe magnet can be used to localize a discrete spectrum of standing spin wave modes in a continuous ferromagnetic thin film without lithographic modification to the film. Obtaining the resonance field for a localized mode is not trivial due to the effect of the confined and inhomogeneous magnetization precession. We compare the results of micromagnetic and analytic methods to find the resonance field of localized modes in a ferromagnetic thin film, and investigate the accuracy of these methods by comparing with a numerical minimization technique that assumes Bessel function modes with pinned boundary conditions. We find that the micromagnetic technique, while computationally more intensive, reveals that the true magnetization profiles of localized modes are similar to Bessel functions with gradually decaying dynamic magnetization at the mode edges. We also find that an analytic solution, which is simple to implement and computationally much faster than other methods, accurately describes the resonance field of localized modes when exchange fields are negligible, and demonstrating the accessibility of localized mode analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Effects of disorder on spin injection and extraction for organic semiconductor spin-valves

A device model for tunnel injection and extraction of spin-polarized charge carriers between ferromagnetic contacts and organic semiconductors with disordered molecular states is presented. Transition rates for tunneling are calculated based on a transfer Hamiltonian. Transport in the bulk semiconductor is described by macroscopic device equations. Tunneling predominantly involves organic molecular levels near the metal Fermi energy, and therefore typically in the tail of the band that supports carrier transport in the semiconductor. Disorder-induced broadening of the relevant band plays a critical role for the injection and extraction of charge carriers and for the resulting magneto-resistance of an organic semiconductor spin valve.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Cell culture arrays using micron-sized ferromagnetic ring-shaped thin films

Cell patterning has become an important technology for tissue engineering. In this research, domain walls are formed at the two ends of a ferromagnetic ring thin film after applying a strong external magnetic field, which can effectively attract magnetically labeled cells and control the position for biological cell. Magnetophoresis experiment was conducted to quantify the magnetic nanoparticle inside the cells. A ring-shaped magnetic thin films array was fabricated through photolithography. It is observed that magnetically labeled cells can be successfully attracted to the two ends of the ring-shaped magnetic thin film structure and more cells were attracted and further attached to the structures. The cells are co-cultured with the structure and kept proliferating; therefore, such ring thin film can be an important candidate for in-vitro biomedical chips or tissue engineering.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2015

Real-space presentation of the magnetic anisotropy of metallic ferromagnets

A real-space representation of the uniaxial magnetic anisotropy (MA) of metallic ferromagnets is formulated using the full-orbital tight-binding model. By adopting a second-order perturbation for the spin-orbit interaction, numerical calculations of the uniaxial MA are performed for the L1{sub 0} FePt and Y{sub 2}Fe{sub 14}B compounds to evaluate the validity and applicability of the present method.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Polarized spin and valley transport across ferromagnetic silicene junctions

We study ballistic transport of Dirac fermions through silicene barriers, of width d, with an exchange field M and metallic gates above them that provide tunable potentials of height U. Away from the Dirac point (DP), the spin- and valley-resolved conductances, as functions of U, exhibit resonances and close to it a pronounced dip that becomes a transport gap when an appropriate electric field E{sub z} is applied. The charge conductance g{sub c} of such a junction changes from oscillatory to a monotonically decreasing function of d beyond a critical E{sub z}. This change of g{sub c} can be used to realize electric-field-controlled switching. The field M splits each resonance of g{sub c} in two spin-resolved peaks. The spin p{sub s} and valley p{sub v} polarizations of the current near the DP increase with E{sub z} or M and become nearly perfect above certain of their values. We also show that p{sub s} and p{sub v} can be inverted either by reversing the polarity of U or the direction of M. For two barriers, there is no splitting in g{sub c} when the fields M are in opposite directions. Most of these phenomena have no analogs in graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Temperature dependent magnetic anisotropy of epitaxial Co{sub 2}FeAl films grown on GaAs

Co{sub 2}FeAl films with different thickness were prepared at different temperature by molecular beam epitaxy. Their magnetic anisotropy was studied by rotating magneto-optical Kerr rotation measurements under different temperature. It is found that the cubic anisotropy depends only on the temperature-dependent fourth order magneto-elastic coefficients. However, the results of growth and measurement temperature-dependent uniaxial anisotropy suggest that the uniaxial anisotropy of Co{sub 2}FeAl films may be attributed to contributions from both shear strain and anisotropic interfacial bonding. Our experimental findings proposed a new point of view to understand the origin of magnetic anisotropy in ferromagnet/GaAs(001) heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Voltage modulation of propagating spin waves in Fe

The effect of a voltage application on propagating spin waves in single-crystalline 5 nm-Fe layer was investigated. Two micro-sized antennas were employed to excite and detect the propagating spin waves. The voltage effect was characterized using AC lock-in technique. As a result, the resonant field of the magnetostatic surface wave in the Fe was clearly modulated by the voltage application. The modulation is attributed to the voltage induced magnetic anisotropy change in ferromagnetic metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Inhomogeneous distribution of manganese atoms in ferromagnetic ZnSnAs{sub 2}:Mn thin films on InP revealed by three-dimensional atom probe investigation

Atomic-scale Mn distributions in ferromagnetic ZnSnAs{sub 2}:Mn thin films grown on InP substrates have been studied by applying three-dimensional atom probe (3DAP) microscopy. It is found that Mn atoms in cross-sectional 3DAP maps show the presence of inhomogeneities in Mn distribution, which is characteristic patterns of a spinoidal decomposition phase with slightly high and low concentration regions. The high Mn concentration regions are expected to be coherently clustered MnAs in the zinc-blende structure, resulting in the formation of Mn-As random connecting patterns. The origin of room-temperature ferromagnetism in ZnSnAs{sub 2}:Mn on InP can be well explained by the formation of atomic-scale magnetic clustering by spinoidal decomposition without breaking the continuity of the zinc-blende structure, which has been suggested by previous theoretical works. The lattice-matching between magnetic epi-layers and substrates should be one of the most important factors to avoid the formation of secondary hexagonal MnAs phase precipitates in preparing ferromagnetic semiconductor thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Damping factor estimation using spin wave attenuation in permalloy film

Damping factor of a Permalloy (Py) thin film is estimated by using the magnetostatic spin wave propagation. The attenuation lengths are obtained by the dependence of the transmission intensity on the antenna distance, and decrease with increasing magnetic fields. The relationship between the attenuation length, damping factor, and external magnetic field is derived theoretically, and the damping factor was determined to be 0.0063 by fitting the magnetic field dependence of the attenuation length, using the derived equation. The obtained value is in good agreement with the general value of Py. Thus, this estimation method of the damping factor using spin waves attenuation can be useful tool for ferromagnetic thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Layer thickness dependence of current induced effective fields in ferromagnetic multilayers

We report the relation between current induced effective fields and ferromagnetic layer thickness. Hall measurements with rotating magnetic field show that the transverse and perpendicular effective fields have linear relations to the inverse of the magnetic moment m per area S. The results imply that both of these effective fields may originate from spin angular momentum transferring. However, the non-zero intercept of the transverse field at m/S = 0 implies that magnetization independent effects, such as Rashba effect, may contribute to transverse field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Spin wave isolator based on frequency displacement nonreciprocity in ferromagnetic bilayer

We demonstrated the spin wave isolator using bilayer ferromagnetic media comprising single crystalline and poly-crystalline yttrium iron garnet films, which can control the propagation frequency of magnetostatic waves by the direction of applied magnetic field. This isolator's property does not depend on their thickness then this can be downsized and integrated for nano-scale magnonic circuits. Calculated dispersion relationship shows good agreement with measured one.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films

We systematically investigate the annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films with thickness of 100 nm. We correlate the non-uniform residual stress obtained from grazing incidence x-ray diffraction measurements with the ferromagnetic resonance (FMR) linewidth due to effective field inhomogeneities measured from broadband ferromagnetic resonance absorption measurements. We also estimate the annealing temperature effect on the Gilbert and two-magnon scattering contributions to the total ferromagnetic resonance FMR linewidth. We show that the effective field inhomogeneities constitute the main contribution to the microwave linewidth, while this contribution is related to the non-uniform residual stress in the films which is reduced by thermal annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy and NiAl spacer

We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (112{sup ¯}0) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation, which made it a good candidate for CPP-GMR device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗