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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Long Range Ferromagnetic Order in LaCoO 3-δ epitaxial films due to the interplay of epitaxial strain and oxygen vacancy ordering

We demonstrate that a combination of electronic structure modification and oxygen vacancy ordering can stabilize a long-range ferromagnetic ground state in epitaxial LaCoO 3 thin films. Highest saturation magnetization values are found in the thin films in tension on SrTiO 3 and (La,Sr)(Al,Ta)O 3 substrates and the lowest values are found in thin films in compression on LaAlO 3 . Electron microscopy reveals oxygen vacancy ordering to varying degrees in all samples, although samples with the highest magnetization are the most defective. Element-specific x-ray absorption techniques reveal the presence of high spin Co 2+ and Co 3+ as well as low spin Co 3+ in different proportions depending on the strain state. The interactions among the high spin Co ions and the oxygen vacancy superstructure are correlated with the stabilization of the long-range ferromagnetic order.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates [Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates]

Thin films of 300-nm-thick (Pb 0.98 , La 0.02 )(Zr 0.95 , Ti 0.05 )O 3 (PLZT) were epitaxially deposited on (100), (110), and (111) SrTiO3 single crystal substrates by pulsed laser deposition. X-ray diffraction line and reciprocal space mapping (RSM) scans were used to determine the crystal structure. Tetragonal ((001) PLZT) and monoclinic MA ((O 1 1 ) and (111) PLZT) structures were found, which influenced the stored energy density. Electric field induced antiferroelectric to ferroelectric (AFE—>FE) phase transitions were found to have a large reversible energy density of up to 30J/cm 3 . With increasing temperature, an AFE to relaxor ferroelectric (AFE—>RFE) transition was found. The RFE phase exhibited lower energy loss, and an improved energy storage efficiency. Here, the results are discussed from the perspective of crystal structure, dielectric phase transitions, and energy storage characteristics.

25 ENERGY STORAGE↗
DOE OSTI2018

Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold

The effects of visible laser light on cadmium telluride (CdTe), grown by molecular beam epitaxy, are studied at low (48 μ W/ μ m 2 ) and high (480 μ W/ μ m 2 ) laser power densities using micro-Raman spectroscopy. The Raman spectrum of CdTe shows no notable change at low power density ~48 μ W/ μ m 2 for prolonged laser exposure. At higher power density ~480 μ W/ μ m 2 , the Raman spectrum is significantly changed and strong Te-related peaks appear in the spectrum, even for short laser exposure times suggesting that photo-induced Te enrichment happens at the CdTe surface at high laser power density. The temperature rise is estimated from observed shifts in the Te and CdTe optical phonon peaks and modeled using finite-element simulations. At laser power 480 μ W/ μ m 2 , the CdTe exhibits a rise of ~44 °C above room temperature while the observed change in Te temperature is significantly higher, ~179 °C. Furthermore, the approach illustrates steps needed to establish the laser damage threshold for CdTe.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Single-crystalline epitaxial TiO film: A metal and superconductor, similar to Ti metal

Titanium monoxide (TiO), an important member of the rock salt 3d transition-metal monoxides, has not been studied in the stoichiometric single-crystal form. It has been challenging to prepare stoichiometric TiO due to the highly reactive Ti 2+ . We adapt a closely lattice-matched MgO(001) substrate and report the successful growth of single-crystalline TiO(001) film using molecular beam epitaxy. This enables a first-time study of stoichiometric TiO thin films, showing that TiO is metal but in proximity to Mott insulating state. We observe a transition to the superconducting phase below 0.5 K close to that of Ti metal. Density functional theory (DFT) and a DFT-based tight-binding model demonstrate the extreme importance of direct Ti–Ti bonding in TiO, suggesting that similar superconductivity exists in TiO and Ti metal. Our work introduces the new concept that TiO behaves more similar to its metal counterpart, distinguishing it from other 3d transition-metal monoxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Growth of arrays of oriented epitaxial platinum nanoparticles with controlled size and shape by natural colloidal lithography

Here, we developed a method for production of arrays of platinum nanocrystals of controlled size and shape using templates from ordered silica bead monolayers. Silica beads with nominal sizes of 150 and 450 nm were self-assembl into monolayers over strontium titanate single crystal substrates. The monolayers were used as shadow masks for platinum metal deposition on the substrate using the three-step evaporation technique. Produced arrays of epitaxial platinum islands were transformed into nanocrystals by annealing in a quartz tube in nitrogen flow. The shape of particles is determined by the substrate crystallography, while the size of the particles and their spacing are controlled by the size of the silica beads in the mono- layer mask. As a proof of concept, arrays of platinum nanocrystals of cubooctahedral shape were prepared on (100) strontium titanate substrates. We also characterized the nanocrystal arrays by atomic force microscopy, scanning electron microscopy, and synchrotron X-ray diffraction techniques.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by an Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.

Fathauer, R. W.↗
DOE OSTI2013

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

14 SOLAR ENERGY↗
DOE OSTI2015

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

14 SOLAR ENERGY↗
DOE OSTI2016

Epitaxial strain and its relaxation at the LaAlO{sub 3}/SrTiO{sub 3} interface

A series of LaAlO{sub 3} thin films with different thicknesses were deposited by pulsed laser deposition at temperatures from 720 °C to 800 °C. The results from grazing incidence x-ray diffraction and reciprocal space mapping indicate that a thin layer of LaAlO{sub 3} adjacent to the SrTiO{sub 3} substrate remains almost coherently strained to the substrate, while the top layer starts to relax quickly above a certain critical thickness, followed by a gradual relaxation at larger film thickness when they are grown at lower temperatures. The atomic force microscopy results show that the fast relaxation is accompanied by the formation of cracks on the film surface. This can be ascribed to the larger energy release rate when compared with the resistance of LaAlO{sub 3} to cracking, according to calculations from the Griffith fracture theory. For films grown at 720 °C, a drop in sheet resistance by two orders of magnitude is observed when the top layer starts to relax, indicating a relationship between the strain and the conductivity of the two-dimensional electron gas at the LaAlO{sub 3}/SrTiO{sub 3} interface. The strain engineered by growth temperature provides a useful tool for the manipulation of the electronic properties of oxide heterointerfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

In-situ x-ray diffraction study of the growth of highly strained epitaxial BaTiO{sub 3} thin films

In-situ synchrotron x-ray diffraction was performed during the growth of BaTiO{sub 3} thin films on SrTiO{sub 3} substrates using both off-axis RF magnetron sputtering and pulsed laser deposition techniques. It was found that the films were ferroelectric during the growth process, and the presence or absence of a bottom SrRuO{sub 3} electrode played an important role in the growth of the films. Pulsed laser deposited films on SrRuO{sub 3} displayed an anomalously high tetragonality and unit volume, which may be connected to the previously predicted negative pressure phase of BaTiO{sub 3}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effect of silver doping on the surface of La{sub 5/8}Ca{sub 3/8}MnO{sub 3} epitaxial films

Thin film manganese oxides (manganites) display remarkable properties, such as colossal magnetoresistance and charge ordered phases, and became a focal point of research in the past two decades owing to potential applications ranging from oxide spintronics to resistive switching-based memories. La{sub x}Ca{sub 1−x}MnO{sub 3} (LCMO), a widely studied manganite, is known to substantially improve its transport properties when doped with Ag. However, despite the abundance of studies on LCMO, the effect of silver on the surface structure is unknown. Here, through in-situ methods, scanning tunneling microscopy (STM) is performed on La{sub 5/8}Ca{sub 3/8}MnO{sub 3} films grown by pulsed laser deposition. Films doped by silver, as confirmed by in-situ X-ray photoelectron spectroscopy, display large-scale reconstructions, interpreted as being of type (√10 × √10)R18.4°, while films lacking silver display a (√2 × √2)R45° reconstruction that may be associated with a surface charge-ordered state. It is posited that the possible cause of the varied reconstructions is due to a vacancy ordering on top of the existing (√2 × √2)R45° reconstruction. These studies highlight the influence of Ag on the surface structure, and therefore a route towards modifying the surface properties of manganites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy

The interface recombination velocities of CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg{sub 0.46}Cd{sub 0.54}Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗