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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

A dual plate thermoplastic recording device for holographic interferometry

The development of a dual plate holographic interferometer using thermoplastic recording devices is described. The operational characteristics of the thermoplastic devices are investigated and optimized for fringe contrast and signal-to-noise ratio. The dual plate device was demonstrated in a transonic wind tunnel at NASA Ames Research Center. The interferograms derived from the thermoplastic device are compared with those derived from conventional photographic emulsions. The fringe contrast achieved with the optimized thermoplastic device is equivalent to the contrast achieved with conventional techniques.

Umstatter, Holly L.↗
NASA NTRS1987

Detection of radio-frequency modulated optical signals by two and three terminal microwave devices

An interdigitated photoconductor (two terminal device) on GaAlAs/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaAlAs/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time, and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodetectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed.

Bhasin, K. B.↗
NASA NTRS1990

Solid-state reprogrammable analog resistive devices for electronic neural networks

The fabrication and performance of WO3-based, solid-state, three-terminal device configurations as programmable analog memory elements are reported. These transistorlike device structures exhibit good resistance progammability with a remarkable resolution of a few percent of the resistive strength over a four orders of magnitude dynamic range. The most critical component of these devices is an insulating layer between the active WO3 and the cation donor layer. The progamming characteristics and operation mechanisms of the device are described, and probable reaction mechanisms critical to the device stability are discussed.

Ramesham, R.↗
NASA NTRS1990

X ray sensitive area detection device

A radiation sensitive area detection device is disclosed which comprises a phosphor-containing film capable of receiving and storing an image formed by a pattern of incoming x rays, UV, or other radiation falling on the film. The device is capable of fluorescing in response to stimulation by a light source in a manner directly proportional to the stored radiation pattern. The device includes: (1) a light source capable of projecting light or other appropriate electromagnetic wave on the film so as to cause it to fluoresce; (2) a means to focus the fluoresced light coming from the phosphor-containing film after light stimulation; and (3) at least one charged coupled detector or other detecting element capable of receiving and digitizing the pattern of fluoresced light coming from the phosphor-containing film. The device will be able to generate superior x ray images of high resolution from a crystal or other sample and will be particularly advantageous in that instantaneous near-real-time images of rapidly deteriorating samples can be obtained. Furthermore, the device can be made compact and sturdy, thus capable of carrying out x ray or other radiation imaging under a variety of conditions, including those experienced in space.

Carter, Daniel C.↗
NASA NTRS1991

Silicon device performance measurements to support temperature range enhancement

Semiconductor power devices are typically rated for operation below 150 C. Little data is known for power semiconductors over 150 C. In most cases, the device is derated to zero operating power at 175 C. At the high temperature end of the temperature range, the intrinsic carrier concentration increases to equal the doping concentration level and the silicon behaves as an intrinsic semiconductor. The increase in intrinsic carrier concentration results in a shift of the Fermi level toward mid-bandgap at elevated temperatures. This produces a shift in devices characteristics as a function of temperature. By increasing the doping concentration higher operating temperatures can be achieved. This technique was used to fabricate low power analog and digital devices in silicon with junction operating temperatures in excess of 300 C. Additional temperature effects include increased p-n junction leakage with increasing temperature, resulting in increased resistivity. The temperature dependency of physical properties results in variations in device characteristics. These must be quantified and understood in order to develop extended temperature range operation.

Bromstead, James↗
NASA NTRS1990

Heat tube device

The present invention discloses a heat tube device through which a working fluid can be circulated to transfer heat to air in a conventional air conditioning system. The heat tube device is disposable about a conventional cooling coil of the air conditioning system and includes a plurality of substantially U-shaped tubes connected to a support structure. The support structure includes members for allowing the heat tube device to be readily positioned about the cooling coil. An actuatable adjustment device is connected to the U-shaped tubes for allowing, upon actuation thereof, for the heat tubes to be simultaneously rotated relative to the cooling coil for allowing the heat transfer from the heat tube device to air in the air conditioning system to be selectively varied.

Khattar, Mukesh K.↗
NASA NTRS1991

Effects of sweep angle and passive relaminarization devices on a supersonic swept-cylinder boundary layer

The effects of passive leading-edge devices on the boundary layer of a swept cylinder in supersonic flow with very low free-stream disturbance levels are investigated. Tests are conducted at Mach 3.5 over a free-stream Reynolds number based on model diameter of 15,000 to 150,000, and sweep angles of 60 deg and 76 deg are used to evaluate possible sweep-angle effects. The devices tested include a sawtoothed leading edge, square device, and a fence. It is observed that at a sweep angle of 76 deg, relaminarization of the supersonic attachment-line flow is achieved by several of the devices, while no devices are successful at a sweep angle of 60 deg.

Creel, T. R.↗
NASA NTRS1991

Solid state devices

The Solid State Device research program is directed toward developing innovative devices for space remote and in-situ sensing, and for data processing. Innovative devices can result from the standard structures in innovative materials such as low and high temperature superconductors, strained layer superlattices, or diamond films. Innovative devices can also result from innovative structures achieved using electron tunneling or nanolithography in standard materials. A final step is to use both innovative structures and innovative materials. A new area of emphasis is the miniaturization of sensors and instruments molded by using the techniques of electronic device fabrication to micromachine silicon into micromechanical and electromechanical sensors and actuators.

Source record↗
NASA NTRS1992

Design of a resistive exercise device for use on the Space Shuttle

The National Aeronautics and Space Administration in conjunction with the Universities Space Research Association sponsored the design of a Resistive Exercise Device (RED) for use on the Space Shuttle. The device must enable the astronauts to perform a number of exercises to prevent skeletal muscle atrophy and neuromuscular deconditioning in microgravity environments. The RED must fit the requirements for limited volume and weight and must provide a means of restraint during exercise. The design team divided the functions of the device into three major groups: methods of supplying force, methods of adjusting force, and methods of transmitting the force to the user. After analyzing the three main functions of the RED and developing alternatives for each, the design team used a comparative decision process to choose the most feasible components for the overall design. The design team selected the constant force spring alternative for further embodiment. The device consists of an array of different sized constant force springs which can be pinned in different combinations to produce the required output forces. The force is transmitted by means of a shaft and gear system. The final report is divided into four sections. An introduction section discusses the sponsor background, problem background and requirements of the device. The second section covers the alternative designs for each of the main functions. The design solution and pertinent calculations comprises the third section. The final section contains design conclusions and recommendations including topics of future work.

Carlson, Dennis L.↗
NASA NTRS1994

Multilayer thin film Hall effect device

A Hall effect device and a method of obtaining a magnetic field map of a magnetic body with the Hall effect device are presented. The device comprises: (1) a substrate, (2) a first layer having a first Hall coefficient deposited over the substrate, and (3) a second layer having a second Hall coefficient deposited over the first layer, the first and second layers cooperating to create, in the Hall effect device, a third Hall coefficient different from the first and second Hall coefficients. Creation of the third Hall coefficient by cooperation of the first and second layers allows use of materials for the first and second layers that were previously unavailable for Hall effect devices due to their relatively weak Hall coefficient.

Peters, Palmer N.↗
NASA NTRS1995

Superconductivity devices: Commercial use of space

The work described in this report covers various aspects of the Rainbow solid-state actuator technology. It is presented in six parts dealing with materials, processing, fabrication, properties and associated phenomena. The Rainbow actuator technology is a relatively new materials development which had its inception in 1992. It consists of a new processing technology for preparing piezoelectric and electrostrictive ceramic materials. It involves a high temperature chemical reduction process which leads to an internal pre-stressing of the oxide wafer, thus the name Rainbow, an acronym for Reduced And INternally Biased Oxide Wafer. Ceramics fabricated by this method produce bending-mode actuator devices which possess several times more displacement and load bearing capacity than present-day benders (unimorphs, bimorphs). It is anticipated that these solid-state, electromechanical actuators which can be used in a number of applications in space such as cryopump motors, anti-vibration active structures, autoleveling platforms, telescope mirror correctors and autofocusing devices. When considering any of these applications, the key to the development of a successful device is the successful development of a ceramic material which can produce maximum displacement per volt input; hence, this initiative involving a solid-state means for achieving unusually high electromechanical displacement can be significant and far reaching. An additional benefit obtained from employing the piezoelectric effect in these actuator devices is the ability to also utilize them as sensors; and, indeed, they can be used as both motor (actuator) and generator (sensor) in multifunction devices.

Haertling, Gene↗
NASA NTRS1996

Activated-Carbon Sorbent With Integral Heat-Transfer Device

Prototype adsorption device used, for example, in adsorption heat pump, to store natural gas to power automobile, or to separate components of fluid mixtures. Device includes activated carbon held together by binder and molded into finned heat-transfer device providing rapid heating or cooling to enable rapid adsorption or desorption of fluids. Concepts of design and fabrication of device equally valid for such other highly thermally conductive devices as copper-finned tubes, and for such other high-surface-area sorbents as zeolites or silicates.

Jones, Jack A.↗
NASA NTRS1998

Use of SX Series Devices and IEEE 1149.1 JTAG Circuitry

This report summarizes the use of SX series devices and their JTAG 1149.1 circuitry. 'JTAG' circuitry was originally designed to standardize testing of boards via a simple control port interface electrically without having to use devices such as a bed of nails tester. JTAG is also used for other functions such as executing built-in-test sequences, identifying devices, or, through custom instructions, other functions designed in by the chip designer. The JTAG circuitry is designed for test only; it has no functional use in the integrated circuit during normal operations. The JTAG circuitry and the mode of the device is controlled by a circuit block known as the 'TAP controller,' which is a sixteen-state state machine along with various registers. The controller is normally in an operational state known as TEST-LOGIC-RESET. In this state, the device is held in a fully functional, operating mode. However, a Single Event Upset (SEU) may remove the TAP controller from this state, causing a loss of control of the integrated circuit, unless certain precautions are taken, such as grounding the optional JTAG TRST signal.

Katz, Richard B.↗
NASA NTRS1998

Use of SX Series Devices and IEEE 1149.1 JTAG Circuitry

This report summarizes the use of SX series devices and their JTAG 1149.1 circuitry. 'JTAG' circuitry was originally designed to standardize testing of boards via a simple control port interface electrically without having to use devices such as a bed of nails tester. JTAG is also used for other functions such as executing built-in-test sequences, identifying devices, or, through custom instructions, other functions designed in by the chip designer. The JTAG circuitry is designed for test only; it has no functional use in the integrated circuit during normal operations. The JTAG circuitry and the mode of the device is controlled by a circuit block known as the 'TAP controller,' which is a sixteen-state state machine along with various registers. The controller is normally in an operational state known as TEST-LOGIC-RESET. In this state, the device is held in a fully functional, operational mode. However, a Single Event Upset (SEU) may remove the TAP controller from this state, causing a loss of control of the integrated circuit, unless certain precautions are taken, such as grounding the optional JTAG TRST signal.

Katz, Richard B.↗
NASA NTRS1996

Comparison of Non-Parabolic Hydrodynamic Simulations for Semiconductor Devices

Parabolic drift-diffusion simulators are common engineering level design tools for semiconductor devices. Hydrodynamic simulators, based on the parabolic band approximation, are becoming more prevalent as device dimensions shrink and energy transport effects begin to dominate device characteristic. However, band structure effects present in state-of-the-art devices necessitate relaxing the parabolic band approximation. This paper presents simulations of ballistic diodes, a benchmark device, of Si and GaAs using two different non-parabolic hydrodynamic formulations. The first formulation uses the Kane dispersion relationship in the derivation of the conservation equations. The second model uses a power law dispersion relation {(hk)(exp 2)/2m = xW(exp Y)}. Current-voltage relations show that for the ballistic diodes considered. the non-parabolic formulations predict less current than the parabolic case. Explanations of this will be provided by examination of velocity and energy profiles. At low bias, the simulations based on the Kane formulation predict greater current flow than the power law formulation. As the bias is increased this trend changes and the power law predicts greater current than the Kane formulation. It will be shown that the non-parabolicity and energy range of the hydrodynamic model based on the Kane dispersion relation are limited due to the binomial approximation which was utilized in the derivation.

Smith, A. W.↗
NASA NTRS2000

Optimization of Microelectronic Devices for Sensor Applications

The NASA/JPL goal to reduce payload in future space missions while increasing mission capability demands miniaturization of active and passive sensors, analytical instruments and communication systems among others. Currently, typical system requirements include the detection of particular spectral lines, associated data processing, and communication of the acquired data to other systems. Advances in lithography and deposition methods result in more advanced devices for space application, while the sub-micron resolution currently available opens a vast design space. Though an experimental exploration of this widening design space-searching for optimized performance by repeated fabrication efforts-is unfeasible, it does motivate the development of reliable software design tools. These tools necessitate models based on fundamental physics and mathematics of the device to accurately model effects such as diffraction and scattering in opto-electronic devices, or bandstructure and scattering in heterostructure devices. The software tools must have convenient turn-around times and interfaces that allow effective usage. The first issue is addressed by the application of high-performance computers and the second by the development of graphical user interfaces driven by properly developed data structures. These tools can then be integrated into an optimization environment, and with the available memory capacity and computational speed of high performance parallel platforms, simulation of optimized components can proceed. In this paper, specific applications of the electromagnetic modeling of infrared filtering, as well as heterostructure device design will be presented using genetic algorithm global optimization methods.

Cwik, Tom↗
NASA NTRS1999

Electrorheological Fluid Based Force Feedback Device

Parallel to the efforts to develop fully autonomous robots, it is increasingly being realized that there are applications where it is essential to have a fully controlled robot and "feel" its operating conditions, i.e. telepresence. This trend is a result of the increasing efforts to address tasks where humans can perform significantly better but, due to associated hazards, distance, physical limitations and other causes, only robots can be employed to perform these tasks. Such robots need to be assisted by a human that remotely controls the operation. To address the goal of operating robots as human surrogates, the authors launched a study of mechanisms that provide mechanical feedback. For this purpose, electrorheological fluids (ERF) are being investigated for the potential application as miniature haptic devices. This family of electroactive fluids has the property of changing the viscosity during electrical stimulation. Consequently, ERF can be used to produce force feedback haptic devices for tele-operated control of medical and space robotic systems. Forces applied at the robot end-effector due to a compliant environment are reflected to the user using an ERF device where a change in the system viscosity will occur proportionally to the transmitted force. Analytical model and control algorithms are being developed taking into account the non-linearities of these type of devices. This paper will describe the concept and the developed mechanism of ERF based force feedback. The test process and the physical properties of this device will be described and the results of preliminary tests will be presented.

Pfeiffer, Charles↗
NASA NTRS1998

Tunable Dielectric Materials and Devices for Broadband Wireless Communications

Wireless and satellite communications are a rapidly growing industries which are slated for explosive growth into emerging countries as well as countries with advanced economies. The dominant trend in wireless communication systems is towards broadband applications such as multimedia file transfer, video transmission and Internet access. These applications require much higher data transmission rates than those currently used for voice transmission applications. To achieve these higher data rates, substantially larger bandwidths and higher carrier frequencies are required. A key roadblock to implementing these systems at K-band (18-26.5 GHz) and Ka-band (26.5-40 GHz) is the need to develop hardware which meets the requirements for high data rate transmission in a cost effective manner. In this chapter, we report on the status of tunable dielectric thin films for devices, such as resonators, filters, phased array antennas, and tunable oscillators, which utilize nonlinear tuning in the control elements. Paraelectric materials such as Barium Strontium Titanate ((Ba, Sr)TiO3) have dielectric constants which can be tuned by varying the magnitude of the electric field across the material. Therefore, these materials can be used to control the frequency and/or phase response of various devices such as electronically steerable phased array antennas, oscillators, and filters. Currently, tunable dielectric devices are being developed for applications which require high tunability, low loss, and good RF power-handling capabilities at microwave and millimeter-wave frequencies. These properties are strongly impacted by film microstructure and device design, and considerable developmental work is still required. However, in the last several years enormous progress has occurred in this field, validating the potential of tunable dielectric technology for broadband wireless communication applications. In this chapter we summarize how film processing techniques, microwave test configurations, and prototype devices have combined to drive the field to its current stage of development.

Mueller, Carl H.↗