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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Computational and Experimental Investigation of Li-doped Ionic Liquid Electrolytes: [pyr14][tfsi], [pyr13][fsi], and [EMIM][BF4]

We employ molecular dynamics (MD) simulation and experiment to investigate the structure, thermodynamics, and transport of N-methyl-N-butylpyrrolidinium bis(trifluoromethylsufonyl)imide ([pyr14][TFSI]), N -methyl-N-propylpyrrolidinium bis(fluorosufonyl)imide ([pyr13][FSI]), and 1-ethyl-3-methylimidazolium boron tetrafluoride ([EMIM][BF4]), as a function of Li-salt mole fraction (0.05 xLi+ 0.33) and temperature (298 K T 393 K). Structurally, Li+ is shown to be solvated by three anion neigh- bors in [pyr14][TFSI] and four anion neighbors in both [pyr13][FSI] and [EMIM][BF4], and at all levels of xLi+ we find the presence of lithium aggregates. Pulsed field gradient spin-echo NMR measurements of diffusion and electrochemical impedance spectroscopy measurements of ionic conductivity are made for the neat ionic liquids as well as 0.5 molal solutions of Li-salt in the ionic liquids. Bulk ionic liquid properties (density, diffusion, viscosity, and ionic conductivity) are obtained with MD and show excellent agreement with experiment. While the diffusion exhibits a systematic decrease with increasing xLi+, the contribution of Li+ to ionic conductivity increases until reach- ing a saturation doping level of xLi+ 0.10. Comparatively, the Li+ conductivity of [pyr14][TFSI] is an order of magnitude lower than that of the other liquids, which range between 0.1-0.3 mScm. Our transport results also demonstrate the necessity of long MD simulation runs ( 200 ns) required to converge transport properties at room T. The differences in Li+ transport are reflected in the residence times of Li+ with the anions (Li), which are revealed to be much larger for [pyr14][TFSI] (up to 100 ns at the highest doping levels) than in either [EMIM][BF4] or [pyr13][FSI]. Finally, to comment on the relative kinetics of Li+ transport in each liquid, we find that while the net motion of Li+ with its solvation shell (vehicular) significantly contributes to net diffusion in all liquids, the importance of transport through anion exchange (hopping) increases at high xLi+ and in liquids with large anions.

electrolytes↗
NASA NTRS2014

Temperature and Pressure Sensors Based on Spin-Allowed Broadband Luminescence of Doped Orthorhombic Perovskite Structures

Systems and methods that are capable of measuring pressure or temperature based on luminescence are discussed herein. These systems and methods are based on spin-allowed broadband luminescence of sensors with orthorhombic perovskite structures of rare earth aluminates doped with chromium or similar transition metals, such as chromium-doped gadolinium aluminate. Luminescence from these sensors can be measured to determine at least one of temperature or pressure, based on either the intense luminescence of these sensors, even at high temperatures, or low temperature techniques discussed herein.

Eldridge, Jeffrey I.↗
NASA NTRS2013

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

JPL and Alacron have recently developed a high performance, DUV camera with a superlattice doped CMOS imaging detector. Supperlattice doped detectors achieve nearly 100% internal quantum efficiency in the deep and far ultraviolet, and a single layer, Al2O3 antireflection coating enables 64% external quantum efficiency at 263nm. In lifetime tests performed at Applied Materials using 263 nm pulsed, solid state and 193 nm pulsed excimer laser, the quantum efficiency and dark current of the JPL/Alacron camera remained stable to better than 1% precision during long-term exposure to several billion laser pulses, with no measurable degradation, no blooming and no image memory at 1000 fps.

silicon detectors↗
NASA NTRS2010

Characterization and Absolute QE Measurements of Delta-Doped N-Channel and P-Channel CCDs

In this paper we present the methodology for making absolute quantum efficiency (QE) measurements from the vacuum ultraviolet (VUV) through the near infrared (NIR) on delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, and good camera vacuum to prevent chip condensation, and more stringent handling requirements. The system used for these measurements was originally designed for deep UV characterization of CCDs for the WF/PC instrument on Hubble and later for Cassini CCDs.

Jacquot, Blake C.↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

Nikzad, Shouleh↗
NASA NTRS1994

Delta-Doped CCDs for Enhanced UV Performance

Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.

silicon↗
NASA NTRS2000

Delta-doped imagers for UV and EUV applications

In this paper we will discuss performance of delta-doped CCDs in UV and EUV, our in-house thinning capability, bonding approaches for producing flat focal plane arrays, and in-house capabilities of directly applied antireflection coatings.

UV EUV delta-doped imagers↗
NASA NTRS2005

Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon

An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.

Molecular beam epitaxy↗
NASA NTRS2013

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

In this paper, we present experimental results and band structure calculations that illuminate the unique properties of superlattice-doped detectors. Numerical band structure calculations are presented to analyze the dependencies of surface passivation on dopant profiles and interface trap densities (Figure 3). Experiments and calculations show that quantum-engineered surfaces, grown at JPL by low temperature molecular beam epitaxy, achieve a qualitative as well as quantitative uniqueness in their near-immunity to high densities of surface and interface traps.

doped silicon surfaces↗
NASA NTRS1997

Low-Energy Electron Detection with Delta-Doped CCDs

In this paper, we will briefly discuss delta-doped CCDs and their application of low-energy electron detection. We show that modification of the surface this way can greatly improve sensitivity to low energy electrons.

electron↗