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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Dipolar spin wave packet transport in a van der Waals antiferromagnet

Antiferromagnets are promising platforms for transduction and transmission of quantum information via magnons—the quanta of spin waves—and they offer advantages over ferromagnets in regard to dissipation, speed of response and robustness to external fields. Recently, transduction was shown in a van der Waals antiferromagnet, where strong spin-exciton coupling enables readout of the amplitude and phase of coherent magnons by photons of visible light. This discovery shifts the focus of research to transmission, specifically to exploring the non-local interactions that enable magnon wave packets to propagate. Here we demonstrate that magnon propagation is mediated by long-range dipole–dipole interaction. This coupling is an inevitable consequence of fundamental electrodynamics and, as such, will likely mediate the propagation of spin at long wavelengths in the entire class of van der Waals magnets currently under investigation. In conclusion, successfully identifying the mechanism of spin propagation provides a set of optimization rules, as well as caveats, that are essential for any future applications of these promising systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures

A key feature of two-dimensional materials is that the sign and concentration of their carriers can be externally controlled with techniques such as electrostatic gating. However, conventional electrostatic gating has limitations, including a maximum carrier density set by the dielectric breakdown, and ionic liquid gating and direct chemical doping also suffer from drawbacks. In this work, we show that an electron-beam-induced doping technique can be used to reversibly write high-resolution doping patterns in hexagonal boron nitride-encapsulated graphene and molybdenum disulfide (MoS 2 ) van der Waals heterostructures. The doped MoS 2 device exhibits an order of magnitude decrease of subthreshold swing compared with the device before doping, whereas the doped graphene devices demonstrate a previously inaccessible regime of high carrier concentration and high mobility, even at room temperature. We also show that the approach can be used to write high-quality p–n junctions and nanoscale doping patterns, illustrating that the technique can create nanoscale circuitry in van der Waals heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Emergence of exchange bias in van der Waals magnetic alloy CrxPt1−xTe2

Abstract Cr x Pt 1− x Te 2 is a recently developed van der Waals magnetic alloy noted for its stability under ambient conditions. Here, we report the emergence of an exchange bias effect in Cr x Pt 1− x Te 2 , without typical exchange bias sources such as an adjacent antiferromagnetic layer. We find that the exchange bias is present for x = 0.45 and absent for x = 0.35, which is correlated to the presence of a Cr modulation where the Cr concentration alternates each vdW layer (modulation period of 2 layers) for x ≥ 0.4. We perform Monte Carlo simulations utilizing exchange parameters from first-principles calculations, which recreate the exchange bias in hysteresis loops of Cr 0.45 Pt 0.55 Te 2 . From our simulations, we infer the source of exchange bias to be magnetic moments locked into free energy minima that resist magnetization reversal. This work presents a way to introduce desirable magnetic properties to van der Waals magnets.

Bailey-Crandell, Ryan↗
DOE OSTI2022

Theoretical study of the CO 2 –O 2 van der Waals complex: potential energy surface and applications

A four-dimensional-potential energy surface (4D-PES) of the atmospherically relevant carbon dioxide–oxygen molecule (CO 2 –O 2 ) van der Waals complex is mapped using the ab initio explicitly correlated coupled cluster method with single, double, and perturbative triple excitations (UCCSD(T)-F12b), and extrapolation to the complete basis set (CBS) limit using the cc-pVTZ-F12/cc-pVQZ-F12 bases and the l –3 formula. An analytic representation of the 4D-PES was fitted using the method of interpolating moving least squares (IMLS). These calculations predict that the most stable configuration of CO 2 –O 2 complex corresponds to a planar slipped-parallel structure with a binding energy of V ~ –243 cm –1 . Another isomer is found on the PES, corresponding to a non-planar cross-shaped structure, with V ~ –218 cm –1 . The transition structure connecting the two minima is found at V ~ –211 cm –1 . We also performed comparisons with some CO 2 –X van der Waals complexes. Moreover, we provide a SAPT analysis of this molecular system. Then, we discuss the complexation induced shifts of CO 2 and O 2 . Afterwards, this new 4D-PES is employed to compute the second virial coefficient including temperature dependence. A comparison between quantities obtained in our calculations and those from experiments found close agreement attesting to the high quality of the PES and to the importance of considering a full description of the anisotropic potential for the derivation of thermophysical properties of CO 2 –O 2 mixtures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

A type-I van der Waals heterostructure formed by monolayer WS 2 and trilayer PdSe 2

Two-dimensional (2D) heterostructures, formed by stacking 2D semiconductors through the van der Waals force, have been extensively studied recently. However, the majority of the heterostructures discovered so far possess type-II interfaces that facilitate interlayer charge separation. Type-I interfaces, on the other hand, confine both electrons and holes in one layer, which is beneficial for optical applications that utilize electron–hole radiative recombination. So far, only a few type-I 2D heterostructures have been achieved, which has limited the construction of multilayer heterostructures with sophisticated band landscapes. Here, we report experimental evidence of a type-I interface between monolayer WS 2 and trilayer PdSe 2 . Two-dimensional PdSe 2 has emerged as a promising material for infrared optoelectronic and other applications. We fabricated the heterostructure by stacking an exfoliated monolayer WS 2 flake on top of a trilayer PdSe 2 film, synthesized by chemical vapor deposition. Photoluminescence spectroscopy measurements revealed that the WS 2 exciton peak is significantly quenched in the heterostructure, confirming efficient excitation transfer from WS 2 to PdSe 2 . Femtosecond transient absorption measurements with various pump/probe configurations showed that both electrons and holes photoexcited in the WS 2 layer of the heterostructure can efficiently transfer to PdSe 2 , while neither type of carriers excited in PdSe 2 can transfer to WS 2 . These experimental findings establish a type-I band alignment between monolayer WS 2 and trilayer PdSe 2 . Furthermore, our results further highlight PdSe 2 as an important 2D material for constructing van der Waals heterostructures with emergent electronic and optoelectronic properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Catalytically mediated epitaxy of 3D semiconductors on van der Waals substrates

The formation of well-controlled interfaces between materials of different structure and bonding is a key requirement when developing new devices and functionalities. Of particular importance are epitaxial or low defect density interfaces between two-dimensional materials and three-dimensional semiconductors or metals, where an interfacial structure influences electrical conductivity in field effect and optoelectronic devices, charge transfer for spintronics and catalysis, and proximity-induced superconductivity. Epitaxy and hence well-defined interfacial structure has been demonstrated for several metals on van der Waals-bonded substrates. Semiconductor epitaxy on such substrates has been harder to control, for example during chemical vapor deposition of Si and Ge on graphene. Here, we demonstrate a catalytically mediated het-eroepitaxy approach to achieve epitaxial growth of three-dimensional semiconductors such as Ge and Si on van der Waals-bonded materials such as graphene and hexagonal boron nitride. Epitaxy is "transferred" from the substrate to semiconductor nanocrystals via solid metal nano-crystals that readily align on the substrate and catalyze the formation of aligned nuclei of the semiconductor. In situ transmission electron microscopy allows us to elucidate the reaction pathway for this process and to show that solid metal nanocrystals can catalyze semiconductor growth at a significantly lower temperature than direct chemical vapor deposition or deposition mediated by liquid catalyst droplets. We discuss Ge and Si growth as a model system to explore the details of such hetero-interfacing and its applicability to a broader range of materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A practical guide for crystal growth of van der Waals layered materials

This Tutorial provides an overview of the techniques that are most commonly utilized to grow bulk van der Waals crystals. The materials discussed were selected to highlight various challenges that are often encountered during crystal growth. Additionally, in relatively equal parts, the text covers melt-based techniques, vapor transport growths, and the characterization of crystal quality with an emphasis on structural and chemical homogeneities. Furthermore, pertinent details are given regarding the growth and characterization of many specific compounds, with examples mostly drawn from our own research, and an effort is made to highlight cases where the growths offer a particular lesson or the conditions have a significant impact on the crystal’s physical properties. A primary goal is to motivate more researchers to grow crystals by providing general descriptions and considerations for different growth techniques and equipment while sharing some of our own lessons learned and best practices for the growth and characterization of layered van der Waals crystals. The Tutorial is not written solely for aspiring crystal growers, however, because any researcher who collaborates with a crystal grower can benefit from having a greater understanding and appreciation of the processes of crystal growth and materials development.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Substrate-controlled dynamics of spin qubits in low dimensional van der Waals materials

We report a theoretical study of the coherence dynamics of spin qubits in two-dimensional materials (2DMs) and van der Waals heterostructures, as a function of the host thickness and the composition of the surrounding environment. We focus on MoS2 and WS2, two promising systems for quantum technology applications, and we consider the decoherence arising from the interaction of the spin qubit with nuclear spins. We show that the Hahn-echo coherence time is determined by a complex interplay between the source of decoherence in the qubit host and in the environment, which in turn determines whether the noise evolution is in a classical or quantum mechanical regime. We suggest that the composition and thickness of van der Waals heterostructures encapsulating a qubit host can be engineered to maximize coherence times. Finally, we discuss how quantum sensors may be able to probe the dynamics of the nuclear bath in 2DMs.

Onizhuk, Mykyta (ORCID:0000000304344575)↗
DOE OSTI2021

A perspective on two-dimensional van der Waals opto-spin-caloritronics

Two-dimensional (2D) van der Waals magnetic semiconductors displaying controllable ferromagnetism at room temperature form atomically sharp interfaces with various substrates. Such heterostructures create platforms for understanding spin-dependent phenomena across interfaces and surfaces for high-performance technological applications. Combining these 2D magnets with light and the spin Seebeck effect (SSE) in-state-of-the-art thermo-opto-spin studies forms a new paradigm in the field of spin-caloritronics that harnesses light as the new heat. In this Perspective, we detail how to exploit recent advances in 2D van der Waals materials to boost the SSE and propose a new strategy for optically controlled SSE in 2D magnetic semiconductor-based heterostructures with the intent to establish the research thrust of “opto-spin-caloritronics.”

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Anomalous stability of non-van der Waals bonded B4C nanosheets through surface reconstruction

Boron carbide (B4C) has been well studied both theoretically and experimentally in its bulk form due to its exceptional hardness and use as a high-temperature thermoelectric. However, the properties of its two-dimensional nanosheets are not well established. In this paper, using van der Waals-corrected density-functional theory simulations, we show that bulk B4C can be cleaved along different directions to form B4C nanosheets with low formation energies. We find that there is minimal dependence of formation energies on cleavage planes and surface terminations, even though the bulk is not van der Waals layered. This anomalous stability of B4C nanosheets is found to be a result of surface reconstructions that are unique to B-rich systems. While the density of states of the bulk B4C indicate that it is a semiconductor, the B4C nanosheets are found to be predominantly metallic. We attribute this metallic behavior to a redistribution of charges on the surface bonds of the films. The Seebeck coefficients of the B4C films remain comparable to those of the bulk and are nearly constant as a function of temperature. Our results provide guidance for experimental synthesis efforts and future application of B4C nanosheets in nanoelectronic and thermoelectric applications.

Physics↗
DOE OSTI2023

Application of the van der Pauw method for electrical conductivity measurements at high temperatures using an insulating compressing ring

High quality data on the high temperature electrical properties of ceramics, particularly oxides, is of great value for material selection, design, and modeling for a broad range of emerging applications. Utilizing the mismatch in the coefficient of thermal expansion between two materials, a purely mechanical method for establishing electrical contact in the van der Pauw geometry to measure the bulk resistivity of ceramic disks at high temperatures is presented. Measurements of a reference material, 20 mol. % Gd-doped cerium oxide, are presented up to 1000 °C. The viability of electrical measurements up to a maximum temperature of 1600 °C is also considered. Measurements are performed using multiple techniques and compared to literature values finding excellent agreement. Finally, the approach described in this work enables the van der Pauw method to be applied to many ceramic materials over a wide range of temperatures and environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

The magnetic states of a van der Waals ferromagnet CrGeTe 3 probed by vector-field magnetic force microscopy

Here, we present a study on the magnetic domain configuration in the van der Waals ferromagnet CrGeTe 3 using a vector-field cryogenic magnetic force microscopy. Our investigation demonstrates the influence of magnetic fields strength and angle on the magnetic domain configuration, showing the coexistence of striped and spike-like magnetic domains. This study contributes to understanding the impact of uniaxial magnetic anisotropy on the domain configuration of van der Waals ferromagnets, offering insights into stabilizing different domain patterns.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Magnetism and magnetoelastic effect in the two-dimensional van der Waals multiferroic CuCrP 2 ⁢S 6

Here, we report a magnetic and neutron diffraction study on the ground state magnetism and field evolution of single-crystal van der Waals multiferroic CuCrP 2 ⁢S 6 . The ordered moments align along the 𝑏 axis in the "𝐴-type" antiferromagnetic configuration with a spin-flop transition along the same direction. Field application along 𝑎 introduces a smooth transition to a fully polarized ferromagnetic state via in-plane spin rotation. These findings resolve the ambiguity of the ground state magnetization direction in CuCrP 2 ⁢S 6 and uncover its field responses, providing a firm basis for future magnetoelectric study. A magnetoelastic coupling effect connecting the interlayer spacing and the magnetic order was further revealed, highlighting the out-of-plane strain as an effective control knob for tuning magnetism both in this system and in related van der Waals magnets.

Guo, Jiasen [Oak Ridge National Laboratory (ORNL),↗
DOE OSTI2021

Electronic structure of rhombohedral Cr X 3 ( X = Br, Cl, I) van der Waals crystals

We perform a comprehensive analysis of both the chemical and correlated electronic structure reconstruction of rhombohedral Cr X 3 (X = Br, Cl, I) van der Waals bulk crystals. Using the generalized gradient approximation (GGA) plus dynamical mean-field theory we explicitly demonstrate the importance of local dynamical correlations for a consistent understanding of emergent Kondo quasiparticles and Mott localized electronic states, showing the interplay between material-dependent one-electron GGA line-shape and multiorbital electronic interactions. To probe the correlated paramagnetic electronic state we performed x-ray absorption spectroscopy measurements for CrCl 3 and CrBr 3 bulk crystals. Furthermore, our correlated many-body study is relevant to understanding the electronic structure reconstruction of paramagnetic Cr-trihalide crystals and should be widely applicable to other van der Waals magnetic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Stacking Domain Wall Magnons in Twisted van der Waals Magnets

In this report using bilayer CrI 3 as an example, we demonstrate that stacking domain walls in van der Waals magnets can host one-dimensional (1D) magnon channels, which have lower energies than bulk magnons. Interestingly, some magnon channels are hidden in magnetically homogeneous background and can only be inferred with the knowledge of stacking domain walls. Compared to 1D magnons confined in magnetic domain walls, 1D magnons in stacking domain walls are more stable against external perturbations. We show that the relaxed moiré superlattices of small-angle twisted bilayer CrI 3 is a natural realization of stacking domain walls and host interconnected moiré magnon network. Our Letter reveals the importance of stacking domain walls in understanding magnetic properties of van der Waals magnets and extends the scope of stacking engineering to magnetic dynamics.

2-dimensional system↗
DOE OSTI2021

Anomalous Thermal Hall Effect in an Insulating van der Waals Magnet

Two-dimensional (2D) van der Waals (vdW) magnets have been a fertile playground for the discovery and exploration of physical phenomena and new physics. In this Letter, we report the observation of an anomalous thermal Hall effect (THE) with κ xy ~ 1 × 10 -2 WK -1 m -1 in an insulating van der Waals ferromagnet VI 3 . The thermal Hall signal persists in the absence of an external magnetic field and flips sign upon the switching of the magnetization. In combination with theoretical calculations, we show that VI 3 exhibits a dual nature of the THE, i.e., dominated by topological magnons hosted by the ferromagnetic honeycomb lattice at higher temperatures and by phonons induced by the magnon-phonon coupling at lower temperatures. Our results not only position VI 3 as the first ferromagnetic system to investigate both anomalous magnon and phonon THEs, but also render it as a potential platform for spintronics-magnonics applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Observation of van der Waals phonons in the single-layer cuprate ( Bi , Pb ) 2 ( Sr , La ) 2 CuO 6 + δ

Interlayer van der Waals (vdW) coupling is generic in two-dimensional materials such as graphene and transition-metal dichalcogenides, which can induce very low-energy phonon modes. Using high-resolution inelastic hard x-ray scattering, we uncover the ultralow energy phonon mode along the Cu-O bond direction in the high- T c cuprate (Bi,Pb) 2 (Sr,La) 2 ⁢CuO 6+$\delta$ (Bi2201). The energy and full-width half-maximum (FWHM) of these modes are independent of temperature, while their intensity decreases with doping in accordance with an increasing c -axis lattice parameter. Here, we compare the experimental results to first-principles density functional theory simulations and identify the observed mode as a van der Waals phonon, which arises from the shear motion of the adjacent Bi-O layers. This shows that Bi-based cuprate has vibrational properties similar to graphene and transition-metal dichalcogenides, which can be exploited to engineer novel heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Enhancing the Survivability of Power Systems With Grid-Edge DERs Against DoS Attacks

Power system survivability, defined as the ability of a system to maintain steady-state functionality under varying operational conditions, reflects its resilience against disturbances. While existing research primarily focuses on physical-layer disturbances, the increasing prevalence of grid-edge DERs, which are primarily used for integrating renewable energy, has significantly expanded the cyber attack surface. As a result, operational disruptions caused by cyber threats are posing significant challenges to system survivability and cannot be overlooked. To fill this gap, we redefine system survivability to incorporate the cyber layer’s status and propose a Distributionally Robust Optimization (DRO) approach to enhance power system survivability against potential cyber-physical threats. In this paper, we first analyze the operational guidelines of systems with a high penetration of DERs under various cyber network conditions and redefine survivability in this context. Next, we focus on the most common cyber threat, Denial-of-Service (DoS) attacks, and develop a corresponding attack model. This model allows for the creation of a kernel-based ambiguity set that captures attack uncertainties using historical data. Finally, we transform the proposed DRO model as a tractable optimization problem, with its solution providing an optimal cyber redundancy plan to enhance system survivability in DoS attack scenarios. Simulation results on the IEEE 13-node and 123-node test feeders demonstrate the effectiveness of our proposed model in improving system survivability. This model can also be expanded to include other types of common attacks and serve as a comprehensive planning tool to improve overall cyber physical survival of the system.

cybersecurity↗