Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Contact”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

In Situ Atomic Tracking on the Interfacial Etching and Reconfiguration of Cu-ReSe 2 Contact during Thermal Annealing

The Schottky barrier height can be greatly affected by the metal diffusion, reaction, and covalent bonding formation at the contact. Exploring novel methods and revealing the fundamental mechanisms for contact engineering are of vital importance for microelectronic devices. Here, in this study, the annealing induced interfacial reactions at Cu-ReSe 2 contact are dynamically revealed from the atomic scale. Accompanied by the diffusion of Se to Cu, ReSe 2 is gradually decomposed to a thin Re interlayer through a “chain-by-chain” manner. Theoretical calculations show that the Cu atoms can facilitate the chemical bond breaking of ReSe 2 , significantly lowering the Se diffusion energy barrier toward Cu. The formed Re/ReSe 2 heterostructure presents a metal-like band structure, which underscores the critical role of Cu in altering the interfacial chemistry and promoting carrier transport across the interface. Our results can provide vital insights into the contact properties of ReSe 2 and provide a possible method for fabricating high-performance ReSe 2 -based devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Uncovering the Effects of Metal Contacts on Monolayer MoS 2

Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. In this work, we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS 2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS 2 and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that (1) ultrathin oxidized Al dopes MoS 2 n-type (>2 × 1012 cm –2 ) without degrading its mobility, (2) Ag, Au, and Ni deposition causes varying levels of damage to MoS 2 (e.g. broadening Raman E' peak from <3 to >6 cm –1 ), and (3) Ti, Sc, and Y react with MoS 2 . Reactive metals must be avoided in contacts to monolayer MoS 2 , but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that (4) thin metals do not significantly strain MoS 2 , as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS 2 and broadly applicable to many other 2D semiconductors.

2D materials↗
DOE OSTI2025

Ohmic contacts to nitrogen-incorporated n-type ultrananocrystalline diamond film grown on intrinsic single crystal diamond substrate

Nitrogen-incorporated ultrananocrystalline diamond (n-UNCD) films offer tremendous potential for diverse electronic applications. However, the absence of a reliable Ohmic contact at room temperature limits their practical integration and broader applicability. Here, in this study, we investigate the room temperature specific contact resistivity (ρ c ) of Ti/Pt/Au metal stack deposited on n-UNCD films grown on an intrinsic single crystal diamond substrate using a microwave plasma chemical vapor deposition system. We employ a circular transfer length model (c-TLM) and find the room temperature ρ c to be ∼4.67 × 10 −5 Ω cm 2 , which is among the lowest reported value for n-UNCD films. High temperature vacuum annealing conducted at 700 and 800 °C results in an initial improvement, followed by a minor degradation in ρ c values, respectively. The electrical contacts remain highly Ohmic for all measurements. Furthermore, cross-sectional transmission electron microscopy analysis suggests formation of conductive titanium carbide layer with no significant inter metallic diffusion. Overall, the electrical contacts demonstrate robust thermal stability, both of which are critical for attaining high-performance nanocrystalline diamond-based electronic devices.

Low resistance contacts↗
DOE OSTI2020

An electric-circuit model on the inter-tape contact resistance and current sharing for REBCO cable and magnet applications

REBCO coated conductor has demonstrated high current capacity that can enable high-field magnets for high energy physics and fusion applications. However, quench protection is still one of the main challenges to be addressed for these applications. In addition, Ic and n value variations along the length of REBCO tapes exist in commercial production. The inter-tape contact resistance plays a key role to develop the self protection capability in cables and magnets by enabling current sharing and suppressing excessive eddy currents. Here we propose an electric-circuit model to describe the inter-tape contact resistance and its impact on the current sharing between REBCO tapes. We report the experiments on a 2-stacked tape REBCO cable with local Ic drop to validate the model. With the developed model, we study the upper limit of the contact resistance which allows current sharing between tapes. We also study the impact of variation in Ic and n values in tapes on the cable performance. Finally, our model is expected to provide useful insight into the current sharing and target values for inter-tape contact resistance in REBCO cables and magnets for various applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Screen-Printed Contacts for Crystalline Silicon Solar Cells: An Overview

Over the years, the photovoltaic market, worldwide, has been witnessing a double-digit growth rate. The silicon solar cell manufacturing technology has evolved to utilize raw materials optimally to address this growth. One of the ways in which manufacturers are addressing the challenge is by increasing the cell size and making thinner wafers. With this change in parameters, understanding the metal contact formation in solar cells becomes paramount to improve their efficiency. Screen printing is a widely used method to form metal contacts on solar cells and is ideally suited for large-volume manufacturing. This paper presents a review of the (a) role of screen printing in various solar cell architectures and (b) existing models for current conduction and contact formation mechanisms. An alternate approach to current conduction and contact formation mechanism in silicon solar cells is proposed.

contacts↗
DOE OSTI2023

Exploiting Fixed Charge at Selective Contacts for Silicon Photovoltaics

The goal of this work was to examine and exploit fixed interface charges in ultra-thin (0-3 nm thickness) tunnel dielectric layers sandwiched between silicon and selective contact metal oxides (molybdenum oxide, MoO x , titanium oxide, TiO 2 ). Specifically, the interface fixed charge was varied by changing processing conditions and materials over a wide range and the effect on the current-voltage behavior and the Schottky barrier height was quantified. In budget period 1 (year 1), the objective was to grow aluminum oxide tunnel layers with quantified fixed charge over a range of ~1E12 to ~-2E12 cm -2 and combine these with MoO x and TiO 2 layers on Czochralsi (CZ) mono p- and n-Si, respectively. We sought conditions that maximize fixed charge and minimize Schottky barrier height to MoO x contacts to p-Si. This objective, along with investigating the effects of silicon surface terminations, occupied the majority of the project timeline (Q1-Q8) due to complications with high specific contact resistivity values. In the last two quarters of the project period, the objective was to insert HfO2 layers between Si and aluminum oxide layers to quench the fixed charge for layers with otherwise identical thermal history. Another objective was to lower the barrier height at TiO 2 -based contacts on n-type Si, but that was never investigated completely.

14 SOLAR ENERGY↗
DOE OSTI2021

DeepComplex: A Web Server of Predicting Protein Complex Structures by Deep Learning Inter-chain Contact Prediction and Distance-Based Modelling

Proteins interact to form complexes. Predicting the quaternary structure of protein complexes is useful for protein function analysis, protein engineering, and drug design. However, few user-friendly tools leveraging the latest deep learning technology for inter-chain contact prediction and the distance-based modelling to predict protein quaternary structures are available. To address this gap, we develop DeepComplex, a web server for predicting structures of dimeric protein complexes. It uses deep learning to predict inter-chain contacts in a homodimer or heterodimer. The predicted contacts are then used to construct a quaternary structure of the dimer by the distance-based modelling, which can be interactively viewed and analysed. The web server is freely accessible and requires no registration. It can be easily used by providing a job name and an email address along with the tertiary structure for one chain of a homodimer or two chains of a heterodimer. The output webpage provides the multiple sequence alignment, predicted inter-chain residue-residue contact map, and predicted quaternary structure of the dimer.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

Noncured Graphene Thermal Interface Materials for High-Power Electronics: Minimizing the Thermal Contact Resistance

We report on experimental investigation of thermal contact resistance, RC, of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness, Sq. It is found that the thermal contact resistance depends on the graphene loading, ξ, non-monotonically, achieving its minimum at the loading fraction of ξ ~15 wt%. Decreasing the surface roughness by Sq~1 μm results in approximately the factor of ×2 decrease in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, KTIM, thermal contact resistance, RC, and the total thermal resistance of the thermal interface material layer on ξ and Sq can be utilized for optimization of the loading fraction of graphene for specific materials and roughness of the connecting surfaces. Our results are important for the thermal management of high-power-density electronics implemented with diamond and other wide-band-gap semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Proof-of-concept for polysilicon on locally etched oxide (PLEO) contacts. Room temperature approach (via MACE) to engineer pinholes decouples charge-carrier transport across contact from passivation scheme of choice. 19 and 17% PLEO devices fabricated on double-side textured and saw-damage etched n Cz wafers, respectively. Preliminary work on polysilicon on locally etched nitride/oxide (PLENO) contacts. 0.2 fA/cm2 achieved with p PLENO; contact displays Ohmic behavior but still very resistive due to low pinhole density.

c-Si↗
DOE OSTI2024

Development and Reliability of Screen-Printable Fire-Through Cu Paste for Passivated Contact Solar Cells

We present the development of copper (Cu) paste which has been screen printed on Selective Emitter-Passivated Emitter Rear Contact (SE-PERC) solar cells. This paste can also be applied to Tunnel Oxide Passivated Contact (TOPCON) solar cells due to its fire-through nature. Champion PERC cells have achieved ....efficiency with ...parameters . Accelerated testing to investigate reliability performance of the SE- PERC mini-modules were carried out in damp heat chamber with 85oC and 85% humidity. The devices were found to be operational even after 1,500 hours. Devices with screen printed Ag contacts on the front side have been studied in parallel to the Cu contacts for comparison.

copper paste↗
DOE OSTI2021

Trap-Assisted Dopant Compensation Prevents Shunting in Poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Using a trap-assisted compensation model, we explain why polycrystalline Si (poly-Si) passivating contacts are able to achieve low leakage current between the doped fingers of interdigitated back contact (IBC) monocrystalline Si solar cells despite mixing of boron and phosphorus dopants in the isolation region. The fill factor of IBC solar cells is strongly affected by the electrical isolation region between n- and p-type fingers, as this region is critical in minimizing shunting losses. During fabrication of monocrystalline Si solar cells with poly-Si passivating contacts, the intrinsic poly-Si isolation region inevitably gets contaminated with both p- and n-type dopants. Using dopant profiles measured with time-of-flight secondary ion mass spectrometry and scanning probe measurements of the isolation region, we demonstrate that despite the dopant spreading during cell processing, a well-compensated region between the doped fingers exists that prevents shunting. The trap-assisted dopant compensation mechanism significantly widens the compensated region to tens of microns, where the residual dopant densities are below the trap density. This enables a high-resistivity region, resulting in low shunt current. Using one-dimensional (1-D) finite element diode simulations, we identify the design parameters and experimental conditions under which a sufficiently resistive region can form. Furthermore, our measurements of 2-D local resistivity and work function maps across the isolation region using scanning spreading resistance microscopy and Kelvin probe force microscopy demonstrate the existence of a highly resistive, wide compensated region and confirm our proposed compensation mechanism. For our structures, this region is ~25 µm in width within a ~150 µm wide finger isolation region with nearly 3 orders of magnitude higher resistivity than the regions dominated by a single type of dopant.

14 SOLAR ENERGY↗
DOE OSTI2024

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al 0.85 Ga 0.15 N barrier/Al 0.50 Ga 0.50 N channel HEMT with a large positive threshold voltage (V TH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10 −6 Ω cm 2 , average = 1.8 × 10 −4 Ω cm 2 ) are demonstrated in an Al 0.85 Ga 0.15 N barrier/Al 0.68 Ga 0.32 N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Low-Temperature Gold Deposition Improves CdTe Back Contacts

Improved back contacts can benefit CdTe photovoltaics (PV). In this work, Cd(Se,Te) PV absorbers are cooled during Au evaporation to thermally quench a chemical reaction occurring between gold and CdTe and the generation of a reaction product that lowers device efficiency. Reducing substrate temperature enhances PV power conversion efficiency via open-circuit voltage and fill factor increases. X-ray photoelectron spectroscopy (XPS) reveals that lower temperature also reduces chemical perturbations of the CdTe, potentially linking back contact formation to a CdTe degradation product that hinders PV performance. Comparing reaction enthalpy and substrate heating energy shows that back contact formation by sputtering elemental metals onto ZnTe may exhibit a degradation pathway analogous to that of CdTe/Au reported here. Degradation-diminishing contact formation processes are therefore of general interest for optoelectronic devices, and the reduced substrate temperature in this study is one example.

14 SOLAR ENERGY↗
DOE OSTI2024

Effect of Iron Contamination and Polysilicon Gettering on the Performance of Polysilicon‐Based Passivating Contact Solar Cells

Over the past decade, silicon solar cells with carrier-selective passivating contacts based on polysilicon capping an ultra-thin silicon oxide (commonly known as TOPCon or POLO) have demonstrated promising efficiency potentials and are regarded as an evolutionary upgrade to the PERC (passivated emitter and rear contact) cells in manufacturing. The polysilicon-based passivating contacts also exhibit excellent gettering effects that relax the wafer and cleanroom requirements to some extent. Here, in this work, we experimentally explore the impact of bulk iron contamination and polysilicon gettering on the passivation quality of the polysilicon/oxide structure and the resulting solar cells performance. Results show that both n- and p-type polysilicon/oxide passivating contacts are not affected by iron gettering, demonstrating robust and stable passivation quality. However, for a very high bulk iron contamination (1 × 10 13 cm −3 ), the accumulated iron in the p-type lightly boron-doped emitter in crystalline silicon would degrade the emitter saturation current density. This can cause a reduction in both open-circuit voltage and short-circuit current. Meanwhile, this very high iron content (1 × 10 13 cm −3 ) can further degrade the fill factor and temperature coefficient of the cells. On the other hand, for an initial iron content of 2 × 10 12 cm −3 , which should be well above the iron level in the current industrial Czochralski silicon wafers, the resulting cells demonstrate similar performance as the control group with no intentional iron contamination. This work brings attention to both the benefits of polysilicon gettering effects as well as the potential degradation due to the accumulation of metal impurities in the p-type emitter region.

14 SOLAR ENERGY↗
DOE OSTI2021

Determining the leading-order contact term in neutrinoless double β decay

We present a method to determine the leading-order (LO) contact term contributing to the nn → ppe - e - amplitude through the exchange of light Majorana neutrinos. Our approach is based on the representation of the amplitude as the momentum integral of a known kernel (proportional to the neutrino propagator) times the generalized forward Compton scattering amplitude n ( p 1 ) n ( p 2 ) W + ( k ) → \( p\left({p}_1^{\prime}\right)p\left({p}_2^{\prime}\right){W}^{-}(k) \) , in analogy to the Cottingham formula for the electromagnetic contribution to hadron masses. We construct model-independent representations of the integrand in the low- and high-momentum regions, through chiral EFT and the operator product expansion, respectively. We then construct a model for the full amplitude by interpolating between these two regions, using appropriate nucleon factors for the weak currents and information on nucleon-nucleon ( NN ) scattering in the 1 S 0 channel away from threshold. By matching the amplitude obtained in this way to the LO chiral EFT amplitude we obtain the relevant LO contact term and discuss various sources of uncertainty. We validate the approach by computing the analog I = 2 NN contact term and by reproducing, within uncertainties, the charge-independence-breaking contribution to the 1 S 0 NN scattering lengths. While our analysis is performed in the \( \overline{\mathrm{MS}} \) scheme, we express our final result in terms of the scheme-independent renormalized amplitude \( {\mathcal{A}}_{\nu}\left(\left|\mathbf{p}\right|,\left|\mathbf{p}^{\prime}\right|\right) \) at a set of kinematic points near threshold. We illustrate for two cutoff schemes how, using our synthetic data for \( {\mathcal{A}}_{\nu } \) , one can determine the contact-term contribution in any regularization scheme, in particular the ones employed in nuclear-structure calculations for isotopes of experimental interest.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Relationship between the contact force strength and numerical inaccuracies in piecewise-smooth systems

This work studies the different types of behavior and inaccuracies that can occur when contact is not adequately accounted for in a dynamical system with freeplay, as the strength of the contact stiffness increases. The MATLAB® ode45 time integration solver, with the built-in Event Location capability, is first validated using past experimental data from a forced Duffing oscillator with freeplay. Next, numerical results utilizing event location are compared to results neglecting event location in order to highlight possible numerical errors and effects on multistable dynamical responses. Inaccuracies tend to occur in two different ways. First, neglecting event location can affect the boundaries between basins of attraction. Second, neglecting event location has little effect on the behaviors of the attractor solutions themselves besides merely resembling poorly converged solutions. Errors are less pronounced at the limits of soft or hard contact stiffness. Finally, this study shows the importance of accurately solving piecewise-smooth systems and the existing correlation between the strength of the contact force and possible numerical inaccuracies.

42 ENGINEERING↗
DOE OSTI2022

Accurately measuring the ionic conductivity of membranes via the direct contact method

Accurately measuring the ionic conductivity of membranes is important both for assessing the performance of new membranes as well as for advancing the fundamental understanding of electric field-driven ion transport in membranes. Yet, despite a considerable number of reports on the topic, there is no standardized method for ionic conductivity measurements. One of the main challenges with ionic conductivity measurements is isolating the membrane resistance from the other resistances in the electrochemical cell. In this study, we present a detailed discussion of factors that affect ionic conductivity measurements with the commonly used direct contact method, in which the membrane contacts the electrodes. Such factors include external resistances due to imperfect contact between the membrane and electrodes, residual impedances due to the sample holder and wiring, and fringe effects. Further, we also present and validate simple methods for isolating the true membrane ionic conductivity in both the through-plane and in-plane orientations. These methods can be implemented with virtually any membrane to obtain accurate and reproducible ionic conductivity values. Finally, we outline recommendations for performing ionic conductivity measurements with the direct contact method and a set of parameters to verify when reporting these results.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Evaluating disease surveillance strategies for early outbreak detection in contact networks with varying community structure

Disease surveillance systems allow public health agencies to respond to emerging diseases before they become widespread. Developing such systems requires identifying optimal ways to monitor in the context of an epidemic outbreak; this problem is known as sensor selection. Contact networks represent the dynamics of interaction in a population and are used to model how a disease spreads in a population and to explore strategies of sensor selection. We evaluated five sensor selection strategies on their ability to provide an early warning of a COVID-like outbreak in synthetic contact networks encapsulated in four network scenarios. Three of these scenarios assessed different aspects of community structure. The fourth scenario employed a contact network representing the population and interactions of 6.8 million people in New York City, constructed from an agent-based simulation using census and transportation data. This scenario exemplifies how sensor selection strategies may perform in a real-world, urban context. Our findings suggest that the choice of the optimal strategy depends heavily on the community structure of the network. Strategies that select highly connected nodes or maximize network coverage are the optimal surveillance strategy for outbreak detection in many network community structures. However, a naive implementation of these strategies may fail to provide an early warning at all—including in the New York City scenario. Moreover, these methods are impractical for real-world use as they require knowledge of the underlying contact network. Instead, a selection strategy that starts with a set of random nodes and then performs a random walk through a chain of neighbors reliably provides early warnings without requiring prior knowledge of the network. We find this method, called “random chain”, to be the most pragmatic for implementation in a real-world disease surveillance context.

60 APPLIED LIFE SCIENCES↗