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At least 199 records · Page 11

Synthesis and microstructural TEM investigation of CaCu{sub 3}Ru{sub 4}O{sub 12} ceramic and thin film

CaCu{sub 3}Ru{sub 4}O{sub 12} (CCRO) is a conductive oxide having the same structure as CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) and close lattice parameters. The later compound is strongly considered for high density parallel plates capacitors application due to its so-called colossal dielectric constant. The need for an electrode inducing CCTO epitaxial growth with a clean and sharp interface is therefore necessary, and CCRO is a good potential candidate. In this paper, the synthesis of monophasic CCRO ceramic is reported, as well as pulsed laser deposition of CCRO thin film onto (001) NdCaAlO{sub 4} substrate. Structural and physical properties of bulk CCRO were studied by transmission electron microscopy and electron spin resonance. CCRO films and ceramic exhibited a metallic behavior down to low temperature. CCRO films were (001) oriented and promoted a CCTO film growth with the same orientation. - Graphical Abstract: Structure of CaCu{sub 3}Ru{sub 4}O{sub 12} showing the RuO{sub 6} octahedra and the square planar environment for Cu{sup 2+}. Highlights: > In this study, we investigate the structural properties and microstructure of ceramics CaCu{sub 3}Ru{sub 4}O{sub 12}. > We study the conduction properties of polycrystalline material. > Then we synthesize the conductive thin film which is deposited on a high K material with the same structure (CaCu{sub 3}Ti{sub 4}O{sub 12}).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Dielectric and electrical studies of Pr{sup 3+} doped nano CaSiO{sub 3} perovskite ceramics

Highlights: • CaSiO{sub 3}:Pr{sup 3+} was prepared by facile low temperature solution combustion method. • The crystalline phase of the product is obtained by adopting sintering method. • Samples prepared at 500 °C and calcined at 900 °C for 3 h showed β-phase. • The Pr{sup 3+} doped CaSiO{sub 3} shows “unusual results”. • The electrical microstructure has been accepted to be of internal barrier layer capacitor. - Abstract: CaSiO{sub 3} nano-ceramic powder doped with Pr{sup 3+} has been prepared by solution combustion method. The powder Ca{sub 0.95}Pr{sub 0.05}SiO{sub 3} is investigated for its dielectric and electrical properties at room temperature to study the effect of doping. The sample is characterized by X-ray diffraction and infrared spectroscopy. The size of either of volume elements of CaSiO{sub 3}:Pr{sup 3+} estimated from transmission electron microscopy is about 180–200 nm. The sample shows colossal dielectric response at room temperature. This colossal dielectric behaviour follows Debye-type relaxation and can be explained by Maxwell–Wagner (MW) polarization. However, analysis of impedance and electric modulus data using Cole–Cole plot shows that it deviates from ideal Debye behaviour resulting from the distribution of relaxation times. The distribution in the relaxation times may be attributed to existence of electrically heterogeneous grains, insulating grain boundary, and electrode contact regions. Doping, thus, results in substantial modifications in the dielectric and electrical properties of the nano-ceramic CaSiO{sub 3}.

36 MATERIALS SCIENCE↗

Development of a coolant channel helium and nitrogen gas ratio sensor for a high temperature gas reactor

To measure the changing gas composition of the coolant during a postulated High Temperature Gas Reactor (HTGR) accident, an instrument is needed. This instrument must be compact enough to measure the ratio of the coolant versus the break gas in an individual coolant channel. This instrument must minimally impact the fluid flow and provide for non-direct signal routing to allow minimal disturbance to adjacent channels. The instrument must have a flexible geometry to allow for the measurement of larger volumes such as in the upper or lower plenum of a HTGR. The instrument must be capable of accurately functioning through the full operating temperature and pressure of a HTGR. This instrument is not commercially available, but a literature survey has shown that building off of the present work on Capacitance Sensors and Cross-Capacitors will provide a basis for the development of the desired instrument. One difficulty in developing and instrument to operate at HTGR temperatures is acquiring an electrical conductor that will not melt at 1600 deg. C. This requirement limits the material selection to high temperature ceramics, graphite, and exotic metals. An additional concern for the instrument is properly accounting for the thermal expansion of both the sensing components and the gas being measured. This work covers the basic instrument overview with a thorough discussion of the associated uncertainty in making these measurements. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

High thermal stability and excellent dielectric properties of a novel X8R-type CdCu3Ti4O12 ceramics through a sol-gel technique

Highlights: • CdCu{sub 3}Ti{sub 4}O{sub 12} (CdCTO) ceramics were successfully synthesized via the sol-gel method, and the optimized processing parameters were obtained. • The outstanding dielectric properties: ε{sub r} ≈ 1.63 × 10{sup 4} and tan δ = 0.035 (at 10 kHz) could be obtained in CdCTO ceramics sintered at 1000 °C. • The CdCTO-SG ceramics obtained an excellent thermal stability. - Abstract: CdCu{sub 3}Ti{sub 4}O{sub 12} (CdCTO) ceramics were systematically synthesized via the sol-gel technique. The optimal CH{sub 3}COOH and Ti(OC{sub 4}H{sub 9}){sub 4} concentrations in the synthesis solution and processing temperature were found to be 5.0 vol%, 0.50 mol/L and 60 °C, respectively. These materials exhibited high densities and fine-grained microstructures along with outstanding dielectric properties, including an ε{sub r} of approximately 1.63 × 10{sup 4} and a tan δ of 0.035 at 10 kHz. Over the temperature range from −55 to 150 °C, the temperature coefficients of the dielectric constant at 1 and 10 kHz were −13.9% to 1.20% and −9.10% to 3.92%, respectively, indicating that these ceramics possess excellent thermal stability. These properties also meet the requirements for X8R applications. Data acquired from complex impedance spectroscopy and electrical modulus assessments demonstrates that the superior dielectric properties of these CdCTO ceramics can be attributed to the internal barrier layer capacitor theory (IBLC).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Additive manufacturing of ceramic materials for energy applications: Road map and opportunities

Among engineering materials, ceramics are indispensable in energy applications such as batteries, capacitors, solar cells, smart glass, fuel cells and electrolyzers, nuclear power plants, thermoelectrics, thermoionics, carbon capture and storage, control of harmful emission from combustion engines, piezoelectrics, turbines and heat exchangers, among others. Advances in additive manufacturing (AM) offer new opportunities to fabricate these devices in geometries unachievable previously and may provide higher efficiencies and performance, all at lower costs. This article reviews the state of the art in ceramic materials for various energy applications. The focus of the review is on material selections, processing, and opportunities for AM technologies in energy related ceramic materials manufacturing. The aim of the article is to provide a roadmap for stakeholders such as industry, academia and funding agencies on research and development in additive manufacturing of ceramic materials toward more efficient, cost-effective, and reliable energy systems.

36 MATERIALS SCIENCE↗

Origin of colossal dielectric permittivity of rutile Ti 0.9 In 0.05 Nb 0.05 O 2 : single crystal and polycrystalline

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO 2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10 4 , dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO 2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

36 MATERIALS SCIENCE↗

Modified giant dielectric properties of samarium doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

Highlights: ► Grain size of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics was greatly decreased by doping with Sm{sup 3+}. ► ε′ and tan δ decreased with increasing the concentration of Sm{sup 3+} doping. ► Ca{sub 0.925}Sm{sub 0.05}Cu{sub 3}Ti{sub 4}O{sub 12} exhibited ε′ ∼ 10,863 and low tan δ ∼ 0.043 at 20 °C and 1 kHz. -- Abstract: Effects of Sm{sup 3+} substitution on the microstructure and dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics were investigated. The grain size of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics was greatly decreased by doping with Sm{sup 3+}, resulting from the ability of Sm{sup 3+} to inhibit the grain growth rate. This result can cause a decrease in the dielectric constant (ε′) and loss tangent (tan δ) of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics. Interestingly, high dielectric permittivity (ε′ ∼ 10,863) and low loss tangent (tan δ ∼ 0.043 at 20 °C and 1 kHz) were observed in the Ca{sub 0.925}Sm{sub 0.05}Cu{sub 3}Ti{sub 4}O{sub 12} ceramic. Nonlinear electrical properties of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics were modified by doping with Sm{sup 3+}. The dielectric relaxation behavior of Sm-doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics can be well ascribed based on the internal barrier layer capacitor model of Schottky barriers at the grain boundaries.

36 MATERIALS SCIENCE↗

Substitution of Pb with (Li 1/2 Bi 1/2 ) in PbZrO 3 -based antiferroelectric ceramics

PbZrO 3 -based antiferroelectric (AFE) ceramics are promising dielectrics for high-energy-density capacitors due to their reversible phase transitions during charge–discharge cycles. In this work, a new composition series, [Pb 0.93–x La 0.02 (Li 1/2 Bi 1/2 ) x Sr 0.04 ][Zr 0.57 Sn 0.34 Ti 0.09 ]O 3 , with Li + and Bi 3+ substitution of Pb 2+ at x=0 , 0.04, 0.08, 0.12, 0.16 is investigated for the microstructure evolution, ferroelectric (FE) and dielectric properties. It is found that Li + and Bi 3+ substitution can significantly reduce the sintering temperature and simultaneously enhance the dielectric breakdown strength. An ultrahigh energy efficiency (94.0%) and a large energy density (3.22J/cm 3 ) are achieved in the composition of x = 0.12 with a low sintering temperature (1075°C).

36 MATERIALS SCIENCE↗

Solid-state resistor for pulsed power machines

A flexible solid-state resistor comprises a string of ceramic resistors that can be used to charge the capacitors of a linear transformer driver (LTD) used in a pulsed power machine. The solid-state resistor is able to absorb the energy of a switch prefire, thereby limiting LTD cavity damage, yet has a sufficiently low RC charge time to allow the capacitor to be recharged without disrupting the operation of the pulsed power machine.

36 MATERIALS SCIENCE↗

Aerosol Deposition: Room Temperature Solid-State Deposition of Ceramics

The ability to integrate ceramics with other materials has been limited by the high temperature s (>800C) associated with ceramic processing. A novel process, known as aerosol deposition (AD), capable of preparing ceramic films at room temperature (RT) has been the subject of recent interest in the thermal spray and microelectronics communities. In this process, ceramic particles are accelerated using pressurized gas, impacted on a substrate and form a dense film under vacuum. This revolutionary process eliminates high temperature processing, enabling new coatings and microelectronic device integration as a back end of line process, in which ceramics can be deposited on metals, plastics, and glasses . Future impact s of this technology on Sandia's mission could include improved ceramic integration, miniaturized magnetic circulators in radar applications, new RF communication products, modification of commercial - off - the - shelf electronics, fabrication of conformal capacitors, thin batteries, glass - to - metal seals, and transparent electronics. Currently, optimization for RT solid - state deposition of ceramics is achieved empirically and fundamental mechanisms for ceramic particle - particle bonding are not well understood. Obtaining this knowledge will allow process - microstructure - property relation ship realization and will enable a differentiating ceramic integration capability. This LDRD leveraged Sandias existing equipment and capabilities in simulation, experimentation, and materials characterization to discover the fundamental mechanisms for ceramic particle deformation, particle - substrate bonding, and particle - particle bonding in RT consolidated films. RT deformation of individual Al 2 O 3 particles was examined computationally and experimentally as a model system for understanding the complex dynamics associated with in vacuo RT deposition conditions associated with AD. Subsequently, particle - substrate bonding and particle - particle bonding in AD Al 2 O 3 consolidated films were examined computationally and experimentally. Fundamental mechanisms behind the AD process were proposed.

36 MATERIALS SCIENCE↗

Casting Of Multilayer Ceramic Tapes

Procedure for casting thin, multilayer ceramic membranes, commonly called tapes, involves centrifugal casting at accelerations of 1,800 to 2,000 times normal gravitational acceleration. Layers of tape cast one at a time on top of any previous layer or layers. Each layer cast from slurry of ground ceramic suspended in mixture of solvents, binders, and other components. Used in capacitors, fuel cells, and electrolytic separation of oxygen from air.

Collins, Earl R., Jr.↗

Circuit model of the ITER-like antenna for JET and simulation of its control algorithms

The ITER-like Antenna (ILA) for JET [1] is a 2 toroidal by 2 poloidal array of Resonant Double Loops (RDL) featuring in-vessel matching capacitors feeding RF current straps in conjugate-T manner, a low impedance quarter-wave impedance transformer, a service stub allowing hydraulic actuator and water cooling services to reach the aforementioned capacitors and a 2nd stage phase-shifter-stub matching circuit allowing to correct/choose the conjugate-T working impedance. Toroidally adjacent RDLs are fed from a 3dB hybrid splitter. It has been operated at 33, 42 and 47MHz on plasma (2008-2009) while it presently estimated frequency range is from 29 to 49MHz. At the time of the design (2001-2004) as well as the experiments the circuit models of the ILA were quite basic. The ILA front face and strap array Topica model was relatively crude and failed to correctly represent the poloidal central septum, Faraday Screen attachment as well as the segmented antenna central septum limiter. The ILA matching capacitors, T-junction, Vacuum Transmission Line (VTL) and Service Stubs were represented by lumped circuit elements and simple transmission line models. The assessment of the ILA results carried out to decide on the repair of the ILA identified that achieving routine full array operation requires a better understanding of the RF circuit, a feedback control algorithm for the 2nd stage matching as well as tighter calibrations of RF measurements. The paper presents the progress in modelling of the ILA comprising a more detailed Topica model of the front face for various plasma Scrape Off Layer profiles, a comprehensive HFSS model of the matching capacitors including internal bellows and electrode cylinders, 3D-EM models of the VTL including vacuum ceramic window, Service stub, a transmission line model of the 2nd stage matching circuit and main transmission lines including the 3dB hybrid splitters. A time evolving simulation using the improved circuit model allowed to design and simulate the effectiveness of a feedback control algorithm for the 2nd stage matching and demonstrates the simultaneous matching and control of the 4 RDLs: 11 feedback loops control 21 actuators (8 capacitors, 4 phase shifters and 4 stubs for the 2nd stage matching, 4 main phase shifters controlling of the toroidal phasing and the electronically controlled phase between RF sources feeding top and bottom parts of the array and determines the poloidal phasing of the array which is solved explicitly at each time step) on (simulated) ELMy plasmas.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Embedded Resistors and Capacitors in Organic and Inorganic Substrates

Embedded resistors and capacitors were purchased from two technology; organic PWB and inorganic low temperature co-fire ceramic (LTCC). Small groups of each substrate were exposed to four environmental tests and several characterization tests to evaluate their performance and reliability. Even though all passive components maintained electrical performance throughout environmental testing, differences between the two technologies were observed. Environmental testing was taken beyond manufacturers' reported testing, but general not taken to failure. When possible, data was quantitatively compared to manufacturer's data.

printed circuit board (PCB)↗

Polarization Mechanisms in P(VDF-TrFE) Ferroelectric Thin Films

Ferroelectric polymers have amassed tremendous attention due to several attractive properties including high breakdown strength, low dielectric loss, relatively fast charge/discharge rates and greater flexibility than their ceramic counterparts. In order to achieve enhanced energy efficiency in high-energy storage capacitor applications, it is desirable to obtain slim polarization hysteresis loops for ferroelectric polymer films. Here, it has been demonstrated that promotion of large crystallites and γ phase content through thermal annealing provides a cost-effective way to obtain a quasi-linear polarization response in a PVDF co-polymer thin film. The polarization mechanisms underlying a thin hysteresis loop in the thermally annealed film are elucidated using direct experimental insights from in situ synchrotron diffraction with two-dimensional detection. It has been demonstrated that the susceptibility for electric-field-induced structural changes is higher in the defective ferroelectric γ phase than the polar phase β, due to a higher flexibility for accommodation of gauche bond along the carbon chain. In addition, the polymer chains in the γ phase also exhibit a range of different responses depending on their orientations with respect to the electric field. These conclusions are broadly significant as they provide a fundamental basis for rational design of phase assemblages to obtain tailor-made properties in ferroelectric polymer films.

36 MATERIALS SCIENCE↗

Sol-gel Technology and Advanced Electrochemical Energy Storage Materials

Advanced materials play an important role in the development of electrochemical energy devices such as batteries, fuel cells, and electrochemical capacitors. The sol-gel process is a versatile solution for use in the fabrication of ceramic materials with tailored stoichiometry, microstructure, and properties. This processing technique is particularly useful in producing porous materials with high surface area and low density, two of the most desirable characteristics for electrode materials. In addition,the porous surface of gels can be modified chemically to create tailored surface properties, and inorganic/organic micro-composites can be prepared for improved material performance device fabrication. Applications of several sol-gel derived electrode materials in different energy storage devices are illustrated in this paper. V2O5 gels are shown to be a promising cathode material for solid state lithium batteries. Carbon aerogels, amorphous RuO2 gels and sol-gel derived hafnium compounds have been studied as electrode materials for high energy density and high power density electrochemical capacitors.

Chung-tse Chu↗

Advanced Power Electronics Components

This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.

Schwarze, Gene E.↗

Overview of NASA Ultracapacitor Technology

NASA needed a lower mass, reliable, and safe medium for energy storage for ground-based and space applications. Existing industry electrochemical systems are limited in weight, charge rate, energy density, reliability, and safety. We chose a ceramic perovskite material for development, due to its high inherent dielectric properties, long history of use in the capacitor industry, and the safety of a solid state material.

Hill, Curtis W.↗