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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Mechanical strength and tribological behavior of ion-beam-deposited boron nitride films on non-metallic substrates

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Miyoshi, Kazuhisa↗
NASA NTRS2009

Very Long Single and Few-Walled Boron Nitride Nanotubes via the Pressurized Vapor/Condenser Method

A new method for producing long, small diameter, single and few-walled, boron nitride nanotubes (BNNTs) in macroscopic quantities is reported. The pressurized vapor/condenser (PVC) method produces, without catalysts, highly crystalline, very long, small diameter, BNNTs. Palm-sized, cotton-like masses of BNNT raw material were grown by this technique and spun directly into centimeters-long yarn. Nanotube lengths were observed to be 100 times that of those grown by the most closely related method. Self-assembly and growth models for these long BNNTs are discussed.

Smith, Michael W.↗
DOE OSTI2024

Sequential Dual Alignments Introduce Synergistic Effect on Hexagonal Boron Nitride Platelets for Superior Thermal Performance

Planarly aligning 2D platelets is challenging due to their additional orientational freedom compared to 1D materials. Here, this study reports a sequential dual-alignment approach, employing an extrusion-printing-induced shear force and rotating-magnetic-field-induced force couple for platelet planarly alignment in a yield-stress support bath. It is hypothesized that the partial alignment induced by a directional shear force facilitates subsequent axial rotation of the platelets for planar alignment under an external force couple, resulting in a synergistic alignment effect. This sequential dual-alignment approach achieves better planar alignment of 2D modified hexagonal boron nitride (mhBN). Specifically, the thermal conductivity of the 40 wt% mhBN/epoxy composite is significantly higher (692%) than that of unaligned composites, surpassing the cumulative effect of individual methods (only 133%) with a 5 times more synergistic effect. For 30, 40, and 50 wt% mhBN composites, the thermal conductivity values (5.9, 9.5, and 13.8 W m –1 K –1 ) show considerable improvement compared to the previously reported highest values (5.3, 6.6, and 8.6 W m –1 K –1 ). Additionally, a 3D mhBN/epoxy heat sink is printed and evaluated to demonstrate the feasibility of device fabrication. The approach enables the planar alignment of electrically or thermally conducting 2D fillers during 3D fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Boron nitride on SiC(0001)

Here, in the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0° layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal B x N y layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0° orientation of the B x N y template layer upon annealing.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Vertical β -Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer

In this work, we demonstrate the high performance of β-Ga2O3 metal–insulator–semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on the Ga2O3 substrate by pulsed laser deposition. X-ray photoelectron spectroscopy, Raman spectroscopy, and high-resolution transmission electron microscopy confirm the existence of a 2.8 nm BN interlayer. Remarkably, with the insertion of the ultrathin BN layer, the breakdown voltage is improved from 732 V for Ga2O3 Schottky barrier diodes to 1035 V for Ga2O3 MIS diodes owing to the passivated surface-related defects and reduced reverse leakage currents. Our approach shows a promising way to improve the breakdown performance of Ga2O3-based devices for next-generation high-power electronics.

Physics↗
NASA NTRS2012

Aqueously Dispersed Silver Nanoparticle-Decorated Boron Nitride Nanosheets for Reusable, Thermal Oxidation-Resistant Surface Enhanced Raman Spectroscopy (SERS) Devices

The impurity-free aqueous dispersions of boron nitride nanosheets (BNNS) allowed the facile preparation of silver (Ag) nanoparticle-decorated BNNS by chemical reduction of an Ag salt with hydrazine in the presence of BNNS. The resultant Ag-BNNS nanohybrids remained dispersed in water, allowing convenient subsequent solution processing. By using substrate transfer techniques, Ag-BNNS nanohybrid thin film coatings on quartz substrates were prepared and evaluated as reusable surface enhanced Raman spectroscopy (SERS) sensors that were robust against repeated solvent washing. In addition, because of the unique thermal oxidation-resistant properties of the BNNS, the sensor devices may be readily recycled by short-duration high temperature air oxidation to remove residual analyte molecules in repeated runs. The limiting factor associated with the thermal oxidation recycling process was the Ostwald ripening effect of Ag nanostructures.

Lin, Yi↗
DOE OSTI2024

Low-symmetry vacancy-related spin qubit in hexagonal boron nitride

Abstract Point defect qubits in semiconductors have demonstrated their outstanding capabilities for high spatial resolution sensing generating broad multidisciplinary interest. Hexagonal boron nitride (hBN) hosting point defect qubits have recently opened up new horizons for quantum sensing by implementing sensing foils. The sensitivity of point defect sensors in hBN is currently limited by the linewidth of the magnetic resonance signal, which is broadened due to strong hyperfine couplings. Here, we report on a vacancy-related spin qubit with an inherently low symmetry configuration, the VB2 center, giving rise to a reduced magnetic resonance linewidth at zero magnetic fields. The VB2 center is also equipped with a classical memory that can be utilized for storing population information. Using scanning transmission electron microscopy imaging, we confirm the existence of the VB2 configuration in free-standing monolayer hBN.

Chemistry↗
NASA NTRS2014

Exfoliation of Hexagonal Boron Nitride via Ferric Chloride Intercalation

Sodium fluoride (NaF) was used as an activation agent to successfully intercalate ferric chloride (FeCl3) into hexagonal boron nitride (hBN). This reaction caused the hBN mass to increase by approx.100 percent, the lattice parameter c to decrease from 6.6585 to between 6.6565 and 6.6569 Ǻ, the x-ray diffraction (XRD) (002) peak to widen from 0.01deg to 0.05deg of the full width half maximum value, the Fourier transform infrared (FTIR) spectrum's broad band (1277/cm peak) to change shape, and new FTIR bands to emerge at 3700 to 2700 and 1600/cm. This indicates hBN's structural and chemical properties are significantly changed. The intercalated product was hygroscopic and interacted with moisture in the air to cause further structural and chemical changes (from XRD and FTIR). During a 24-h hold at room temperature in air with 100 percent relative humidity, the mass increased another 141 percent. The intercalated product, hydrated or not, can be heated to 750 C in air to cause exfoliation. Exfoliation becomes significant after two intercalation-air heating cycles, when 20-nm nanosheets are commonly found. Structural and chemical changes indicated by XRD and FTIR data were nearly reversed after the product was placed in hydrochloric acid (HCl), resulting in purified, exfoliated, thin hBN products.

Hung, Ching-cheh↗
DOE OSTI2021

Moiré commensurability and the quantum anomalous Hall effect in twisted bilayer graphene on hexagonal boron nitride

The quantum anomalous Hall (QAH) effect is sometimes observed in twisted bilayer graphene (tBG) when it is nearly aligned with an encapsulating hexagonal boron nitride (hBN) layer. We propose that the appearance or absence of the QAH effect in individual devices could be related to commensurability between the graphene/graphene and graphene/hBN moiré patterns. We identify a series of points in the (θ GG , θ GBN ) twist-angle space at which the two moiré patterns are commensurate, allowing moiré band theory to be applied, and we show that the band Chern numbers are in this case sensitive to a rigid in-plane hBN displacement. Given this property, we argue that the QAH effect is likely only when (i) the (θ GG , θ GBN ) twist-angle-pair is close enough to a commensurate point that the two moiré patterns yield a supermoiré pattern with a sufficiently long length scale, and (ii) the supermoiré has a percolating topologically nontrivial QAH phase. For twist angles far from commensurability, the hBN layer acts as a source of disorder that can destroy the QAH effect. Our proposal can explain a number of current experimental observations. Finally, further experimental studies that can test this proposal more directly are suggested.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Aligned Boron Nitride Nanotube Reinforced Polyethylene Nanocomposite for Space Radiation Shielding

With NASA’s Artemis program aiming to establish a human presence on the Moon and eventually on Mars, protecting astronauts from radiation is necessary. Flight-heritage materials, like those with high hydrogen content, such as polyethylene (PE), have proven to be effective radiation shields. This is due to hydrogen’s high charge-to-mass ratio, low secondary radiation production, efficient energy absorption, and high cross-section, which increases the probability of particle interactions to slow or stop ionized particles. Boron nitride nanotubes (BNNTs) and other boron-rich materials offer more effective thermal neutron radiation-stopping capabilities due to their high cross-section and neutron absorption properties. BNNTs also enhance the mechanical properties of radiation shielding material due to their high strength-to-weight ratios. However, integrating high volumes of nanotubes in a matrix without defects presents significant manufacturing challenges. To address this, a bulk nanocomposite laminate fabricating technique, involving synthesizing millimeter-long vertically aligned BNNTs, densifying the nanotubes to high-volume fractions, and infusing the nanotubes with PE while applying heat and pressure was utilized to fabricate the BNNT-PE nanocomposite that was tested for its radiation shielding properties at NASA Langley Research Center’s neutron radiation exposure lab. Results from these experiments will be discussed in the presentation.

Palak B Patel↗
DOE OSTI2021

Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates

We report a reduction in the linewidth and suppression of spectral diffusion of quantum emitters in hexagonal boron nitride supported on a conductive substrate. In this work, we observe a temperature-dependent reduction in the spectral emission linewidth for CVD-grown and exfoliated crystals on conductive ITO relative to those seen on silicon dioxide (SiO 2 ) substrates. We show that the inhomogeneous linewidth can be suppressed by 45% as a result of using a conductive substrate. We investigate the zero-phonon line profile at temperatures ranging from 4 to 300 K and decompose the effects of thermal broadening and spectral diffusion at each temperature by Voigt fitting. The temperature dependence of homogeneous and inhomogeneous components of the broadening is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Single Atoms Anchored in Hexagonal Boron Nitride for Propane Dehydrogenation from First Principles

We report single-atom catalysts embedded in N-doped graphene have attracted great interest recently, but the hexagonal boron nitride (h-BN) is much less explored as a support. Using first principles density function theory and molecular dynamics, here we investigate the stability of Pt, Au, and Ru single atoms anchored at B and N vacancies on h-BN. We find that Pt and Ru single atoms are much more stable than Au on h-BN. We further examine propane dehydrogenation on these single-atom catalysts and find that Pt 1 at the B vacancy in h-BN and Ru 1 at the N vacancy in h-BN show excellent activity for propane dehydrogenation, as evidenced by low energy barriers for both dehydrogenation steps. Our work suggests that Pt and Ru single atoms anchored at vacancy sites in h-BN could be promising for propane dehydrogenation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Understanding the Breakdown Behavior of Ultrawide-Bandgap Boron Nitride Power Diodes Using Device Modeling

Herein, a device study using technology computer-aided design simulation to theoretically analyze the electrical performance of ultrawide-bandgap boron nitride (BN)-based vertical junction devices is performed, including h-BN Schottky diode, h-BN pn diode, and h-BN/AlN pn diode; this is also the first demonstration of the BN power devices in simulation. The material properties of BN are defined with recently reported data, and the physical mechanisms of the device performance are systematically investigated. Additionally, the h-BN junctions in this simulation shows excellent performance, especially for breakdown behaviors. Schottky diode shows a turn-on voltage of 0.6 V for Pt Schottky contact and breakdown voltages over 450 V for 5 μm, 6 × 10 15 cm –3 p-type-doped drift layer; The h-BN pn diode shows a turn-on voltage of 6 V and breakdown voltages over 3 kV with a critical electric field of 13.6 MV cm –1 for 2.5 μm, 2 × 10 16 cm –3 p-type-doped drift layer. The h-BN/AlN heterojunction pn diode shows a turn-on voltage of 5.8 V and breakdown voltage over 2 kV for 2.5 μm, 2 × 10 16 cm –3 n-type-doped AlN drift layer. Herein, an understanding of the device principles of vertical BN junctions is provided, which can serve as a reference for the future development of robust BN power electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Elementary excitations of single-photon emitters in hexagonal boron nitride

Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable and stable emitters in hexagonal boron nitride (hBN) has opened the door to quantum platforms operating across the infrared to ultraviolet spectrum. Although it is widely acknowledged that defects are responsible for single-photon emitters in hBN, crucial details regarding their origin, electronic levels and orbital involvement remain unknown. Here we employ a combination of resonant inelastic X-ray scattering and photoluminescence spectroscopy in defective hBN, unveiling an elementary excitation at 285 meV that gives rise to a plethora of harmonics correlated with single-photon emitters. We discuss the importance of N π* anti-bonding orbitals in shaping the electronic states of the emitters. Importantly, the discovery of elementary excitations in hBN provides fundamental insights into quantum emission in low-dimensional materials, paving the way for future investigations in other platforms.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Static tensile and tensile creep testing of four boron nitride coated ceramic fibers at elevated temperatures

Six types of uncoated ceramic fibers were static tensile and tensile creep tested at various elevated temperatures. Three types of boron nitride coated fibers were also tested. Room temperature static tensile tests were initially performed on all fibers, at gage lengths of 1, 2, and 4 inches, to determine the magnitude of end effects from the gripping system used. Tests at one elevated temperature, at gage lengths of 8 and 10 inches, were also conducted, to determine end effects at elevated temperatures. Fiber cross sectional shapes and areas were determined using scanning electron microscopy. Creep testing was typically performed for 4 hours, in an air atmosphere.

Coguill, Scott L.↗
NASA NTRS1969

Evaluation, construction and endurance testing of compression sealed pyrolytic boron nitride slot insulation

A high-temperature statorette, consisting of an iron-27 percent cobalt magnetic lamination stack and nickel-clad silver conductors, was tested with pyrolytic boron nitride slot insulation. Temperatures were measured in each test to determine characteristics of slot linear heat conductance from statorette conductors. Testing was carried out to temperatures of approximately 1500 F in a vacuum environment of 10-8 torr. Three assemblies were built and tested, each having a different room temperature slot clearance. The final statorette assembly was subjected to a 100-hour vacuum aging test at 1400 F followed by 25 thermal cycles. Temperature data from the three assemblies showed that decreasing slot clearance and increasing compression loading did enhance heat transfer. The temperature difference between slot and lamination at 1400 F increased 4 F during the thermal aging and an additional 10 F during the 25 thermal cycles.

Grant, W. L.↗
DOE OSTI2024

Impact of hydrogenation on the stability and mechanical properties of amorphous boron nitride

Abstract Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g cm −3 ), high thermal stability, and mechanical properties. The excellent properties of aBN derive from the nature and degree of disorder, which can be controlled at fabrication, allowing tuning of the physical properties for desired applications. Here, we report an improvement in the stability and mechanical properties of aBN upon hydrogen doping. With the introduction of a Gaussian approximation potential for atomistic simulations, we investigate the changing morphology of aBN with varying H doping concentrations. We found that for 8 at% of H doping, the concentration ofsp 3 -hybridized atoms reaches to a maximum which leads to an improvement of thermal stability and mechanical properties by 20%. These results will be a guideline for experimentalists and process engineers to tune the growth conditions of aBN films for numerous applications.

Materials Science↗