Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “BORON”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Continuous measurement of boron concentration in nuclear power plants: why is it essential for safe and efficient operation? - 318

As a neutron-absorber, Boron 10 plays a significant role in nuclear power plants as it is used in order to control reactivity in the core, together with control rods. For that reason; it is a key parameter that has to be controlled. In a similar way, it is crucial to be able to detect a boron dilution in the primary circuit, as it would causes severe damages if not detected and controlled. Thus, it comes as evidence that a boron concentration monitoring system is a key for every nuclear power plant. Consequently, it becomes important to provide plant operators with a boron concentration measurement issued by a reliable, redundant, classified and qualified system, with high accuracy and short response time. In order to cover this need, Rolls-Royce has designed Boronline{sup R}, the latest generation of boron meter, which provides nuclear power plant operators with a permanent record of boron concentration of primary circuit by way of continuous sampling and real-time measurements. Boronline takes part of a new generation of Advanced Sensors and Measurements Technologies. In this paper, boron meter role, main functions and measuring principles will be detailed, as well as technical characteristics of the new generation of boron meter will be presented. (authors)

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2019

Synthesis and Characterization of Silica-Supported Boron Oxide Catalysts for the Oxidative Dehydrogenation of Propane

We report on the oxidative dehydrogenation (ODH) activity of silica-supported boron oxide prepared via incipient wetness impregnation. Characterization of pristine and spent catalysts with infrared, Raman, and solid-state NMR spectroscopy reveals the presence of both isolated and aggregated oxidized boron sites. The results of these investigations, in combination with our earlier work on bulk boron-containing ODH catalysts (e.g., h-BN, metal borides, and elemental boron), give direct evidence that oxidized boron species formed in situ on the surface of these materials are responsible for the exceptional catalytic behavior. Furthermore, we anticipate that investigation of supported boron materials can provide insight into the structural characteristics required for selective boron-containing ODH catalysts.

03 NATURAL GAS↗
DOE OSTI2017

Boron doped diamond synthesized from detonation nanodiamond in a C-O-H fluid at high pressure and high temperature

Boron doped diamond (BDD) was synthesized under high pressure and high temperature (HPHT) of 7 GPa, 1230 °C in a short time of 10 s from a powder mixtures of detonation nanodiamond (DND), pentaerythritol C{sub 5}H{sub 8}(OH){sub 4} and amorphous boron. SEM, TEM, XRD, XPS, FTIR and Raman spectroscopy indicated that BDD nano- and micro-crystals have formed by consolidation of DND particles (4 nm in size). XRD showed the enlargement of crystallites size to 6–80 nm and the increase in diamond lattice parameter by 0.02–0.07% without appearance of any microstrains. Raman spectroscopy was used to estimate the content of boron atoms embedded in the diamond lattice. It was found that the Raman diamond peak shifts significantly from 1332 cm{sup −1} to 1290 cm{sup −1} without appearance of any non-diamond carbon. The correlation between Raman peak position, its width, and boron content in diamond is proposed. Hydrogenated diamond carbon in significant amount was detected by IR spectroscopy and XPS. Due to the doping with boron content of about 0.1 at%, the electrical conductivity of the diamond achieved approximately 0.2 Ω{sup −1} cm{sup −1}. Reaction mechanism of diamond growth (models of recrystallization and oriented attachment) is discussed, including the initial stages of pentaerythritol pyrolysis and thermal desorption of functional groups from the surface of DND particles with the generation of supercritical fluid of low-molecular substances (H{sub 2}O, CH{sub 4}, CO, CO{sub 2}, etc.), as well as byproducts formation (B{sub 2}O{sub 3}, B{sub 4}C). - Highlights: • Boron doped diamond BDD synthesized from detonation nanodiamond, C{sub 5}H{sub 8}(OH){sub 4} and boron. • BDD nano/microcrystals are studied by XRD, SEM, TEM, XPS, FTIR, Raman spectroscopy. • Diamond growth and transition to electro-conductive state (0.2 Ω{sup −1} cm{sup −1}) is observed. • Correlations of Raman bands position and width versus boron content are considered. • High-pressure/temperature reaction mechanism (stages, routes, products) is described.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Thermodynamic stability of elemental boron allotropes with varying numbers of interstitial atoms

Elemental boron exists in multiple allotropes, each characterized by structures containing icosahedral subunits. These structures have interstitial sites between the icosahedral subunits that are partially occupied. The number of atoms in the unit cell varies depending on the occupancy of these interstitial sites. Here we have investigated the thermodynamic stability of boron allotropes for different numbers of atoms in the unit cell by calculating the free energies, including the contribution of phonons. It has been found that β-rhombohedral boron is most stable with 107 atoms/cell at low temperatures, while it becomes most stable with 105 atoms/cell above 1700 K. This suggests the occurrence of a phase transition at this temperature, which could account for the large variation in the number of atoms in the unit cell for β-rhombohedral boron samples. α-tetragonal boron is consistently most stable with 52 atom/cell and becomes unstable with more than 52 atoms/cell. Similar to β-rhombohedral boron, β-tetragonal boron may undergo a phase transition between 192 and 190 atoms/cell configurations. However, the thermodynamic stability of pure β-tetragonal boron has been questioned in comparison with other allotropes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

The effect of Si on the microstructure and mechanical properties of spark plasma sintered boron carbide

Highlights: • Si addition leads to a dense final product at a low sintering temperature. • The added Si preferentially formed SiC and borosilicate glass instead of replacing the chain atoms in boron carbide. • The hardness of our Si-containing boron carbide is 30–35% greater than currently in-use commercial boron carbide plates. - Abstract: Fully dense boron carbide discs were achieved by spark plasma sintering boron carbide powders with 10 wt% silicon. The silicon did not diffuse into boron carbide grains to produce a solid solution of Si-doped boron carbide; instead the silicon reacted with impurities in the starting powder to form β-SiC and borosilicate glass. The resultant new phases facilitated densification of the multiphase ceramic through liquid phase-assisted sintering. The resultant material exhibits improved hardness (34.3 GPa Vikers hardness under 1 kg load) with toughness comparable to both Si-free and commercially available boron carbide.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Uncovering the linear boron environment in Na 3 BP 2 through solid-state 11 B NMR spectroscopy

Boron-based compounds exhibit a wide range of structural diversity, with potential applications spanning organic and inorganic chemistry. Herein, we focus on the characterization of the linear boron-phosphorus unit P═B═P in Na 3 BP 2 using solid-state nuclear magnetic resonance (ssNMR) spectroscopy and density functional theory (DFT) calculations. High-resolution 11 B ssNMR spectra were recorded at two fields, and key parameters such as chemical shift anisotropy (CSA), quadrupolar coupling constants (C Q ), and electric field gradient (EFG) tensors were extracted. The 11 B NMR results revealed a distinct chemical environment for the two-coordinate boron atom, with a CSA span (Ω) of 280 ppm and a C Q of 3.0 MHz. These values were further validated through periodic plane-wave DFT calculations, which showed good agreement with experimental results. The obtained spectral parameters are compared to other linear boron units, such as the BO 2 motif, providing a broader context for understanding boron coordination in inorganic compounds. This work expands the body of NMR knowledge on boron-containing materials, particularly for linear boron motifs. The findings contribute to the growing field of boron chemistry and its potential applications in advanced materials.

Porter, Andrew P. [Ames Laboratory (AMES), Ames, I↗
DOE OSTI2019

Global modeling of wall material migration following boronization in NSTX-U

Boronization is commonly utilized in tokamaks to suppress intrinsic impurities, most notably oxygen from residual water vapor. However, this is a temporary solution, as oxygen levels typically return to pre-boronization levels following repeated plasma exposure. The global impurity migration model WallDYN has been applied to the post-boronization surface impurity evolution in NSTX-U. A "Thin Film Model" has been incorporated into WallDYN to handle spatially inhomogeneous conditioning films of varying thicknesses, together with an empirical boron conditioning model for the NSTX-U glow discharge boronization process. The model qualitatively reproduces the spatial distribution of boron in the NSTX-U vessel, the spatially-resolved divertor emission pattern, and the increase in oxygen levels following boronization. The simulations suggest that oxygen is primarily sourced from wall locations without heavy plasma flux or significant boron deposition, namely the lower and upper passive plates and the lower private flux zone.

Integrated modeling↗
NASA NTRS2015

Hybrid-PIC Modeling of the Transport of Atomic Boron in a Hall Thruster

Computational analysis of the transport of boron eroded from the walls of a Hall thruster is performed by implementing sputter yields of hexagonal boron nitride and velocity distribution functions of boron within the hybrid-PIC model HPHall. The model is applied to simulate NASA's HiVHAc Hall thruster at a discharge voltage of 500V and discharge powers of 1-3 kW. The number densities of ground- and 4P-state boron are computed. The density of ground-state boron is shown to be a factor of about 30 less than the plasma density. The density of the excited state is shown to be about three orders of magnitude less than that of the ground state, indicating that electron impact excitation does not significantly affect the density of ground-state boron in the discharge channel or near-field plume of a Hall thruster. Comparing the rates of excitation and ionization suggests that ionization has a greater influence on the density of ground-state boron, but is still negligible. The ground-state boron density is then integrated and compared to cavity ring-down spectroscopy (CRDS) measurements for each operating point. The simulation results show good agreement with the measurements for all operating points and provide evidence in support of CRDS as a tool for measuring Hall thruster erosion in situ.

Materials Engineering↗
DOE OSTI2013

Method of manufacture of atomically thin boron nitride

The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Dynamically Formed Active Sites on Liquid Boron Oxide for Selective Oxidative Dehydrogenation of Propane

Boron-based catalysts have been shown to be both active and selective for driving the oxidative dehydrogenation of propane (ODHP) without the use of precious metals. This reaction occurs at temperatures that melt the oxide catalyst which challenges our ability to identify the liquid structures of the boron oxide phase under reaction conditions, hindering the understanding of its active sites and reaction mechanism. By combining ab initio molecular dynamics simulation, in-situ Raman characterization, and microkinetic modeling, we propose that the di-coordinated boron sites (BO2) in liquid boron oxide are the active species for O2 activation under reaction conditions. The formed peroxy-like species (>B-O-O-B<) can be viewed as a moderate oxidant for ODHP. The dynamical >B-O* dangling bond originated from >B-O-O-B< site as well as the liquid B2O3 structure itself, plays a critical role in the abstraction of H atoms from propane (C3H7 radical formation). Microkinetic modeling reveals C3H7 radical formation to be the main rate controlling step (~75% degree of rate control) with the dehydration of boron hydroxyls (B-OHs) to recover the di-coordinated boron active sites controlling the remainder of the rate (~25% degree of rate control). Moreover, the activation barriers are found to strongly depend upon the surface B-OH concentration. These findings provide significant insights into the active site and reaction mechanisms on boron-based catalysts for ODHP and underlie the importance of understanding the liquid nature of the catalyst to account for the catalytic activity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beams (LAMFI-USP) by the {sup 10}B(p,αγ({sup 7}Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 10{sup 16} at/cm{sup 2}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Effects of configurational disorder on the elastic properties of icosahedral boron-rich alloys based on B{sub 6}O, B{sub 13}C{sub 2}, and B{sub 4}C, and their mixing thermodynamics

The elastic properties of alloys between boron suboxide (B{sub 6}O) and boron carbide (B{sub 13}C{sub 2}), denoted by (B{sub 6}O){sub 1−x}(B{sub 13}C{sub 2}){sub x}, as well as boron carbide with variable carbon content, ranging from B{sub 13}C{sub 2} to B{sub 4}C are calculated from first-principles. Furthermore, the mixing thermodynamics of (B{sub 6}O){sub 1−x}(B{sub 13}C{sub 2}){sub x} is studied. A superatom-special quasirandom structure approach is used for modeling different atomic configurations, in which effects of configurational disorder between the carbide and suboxide structural units, as well as between boron and carbon atoms within the units, are taken into account. Elastic properties calculations demonstrate that configurational disorder in B{sub 13}C{sub 2}, where a part of the C atoms in the CBC chains substitute for B atoms in the B{sub 12} icosahedra, drastically increase the Young’s and shear modulus, as compared to an atomically ordered state, B{sub 12}(CBC). These calculated elastic moduli of the disordered state are in excellent agreement with experiments. Configurational disorder between boron and carbon can also explain the experimentally observed almost constant elastic moduli of boron carbide as the carbon content is changed from B{sub 4}C to B{sub 13}C{sub 2}. The elastic moduli of the (B{sub 6}O){sub 1−x}(B{sub 13}C{sub 2}){sub x} system are also practically unchanged with composition if boron-carbon disorder is taken into account. By investigating the mixing thermodynamics of the alloys, in which the Gibbs free energy is determined within the mean-field approximation for the configurational entropy, we outline the pseudo-binary phase diagram of (B{sub 6}O){sub 1−x}(B{sub 13}C{sub 2}){sub x}. The phase diagram reveals the existence of a miscibility gap at all temperatures up to the melting point. Also, the coexistence of B{sub 6}O-rich as well as ordered or disordered B{sub 13}C{sub 2}-rich domains in the material prepared through equilibrium routes is predicted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Observations of wall conditioning by means of boron powder injection in DIII-D H-mode plasmas

In this paper, we report observations from the DIII-D tokamak indicating that boron (B) powder injection in tokamak plasmas improves wall conditions similarly to glow discharge boronization (GDB). Isotopically enriched B powder (B 11 > 95%) was introduced gravitationally in a sequence of H-mode plasma discharges at rates up to ~160 mg s -1 for durations up to 3 s. Boron injection to cumulative amounts ≤0.1 g appeared to improve wall conditions similarly to boronization, with indications of reduced wall fueling, reduced recycling at the outer strike point and reduced impurity content at breakdown. Post-mortem analysis of graphite samples exposed to far scrape-off layer plasma fluxes during boron injection confirm the formation of a B-C layer, with average surface composition B:C ~ 1. The results suggest that injecting boron-rich powders in tokamak plasmas can effectively replenish boron films on carbon plasma facing components to improve wall conditions and extend the duration of the beneficial effects of GDB.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Synthesis of boron-carbide aerogels

We present the synthesis of boron carbide aerogels utilizing nano-boron powder and resorcinol–formaldehyde (RF) organic aerogels as precursors. Monolithic aerogels were fabricated from suspensions of boron nanoparticles and RF via an organic sol-gel process, enabling effective distribution of boron in the gel network. The resulting gels underwent supercritical drying, thermal reduction, and subsequent heat treatment to yield boron carbide aerogels with densities ranging from 37 to 55 mg/cm³. By tuning the boron-to-carbon ratio, heat treatment temperature, and dwell time, surface areas up to 53 m²/g were obtained. X-ray diffraction analysis confirmed the formation of the boron carbide phase and detected the presence of residual carbon within the structure.

Materials science↗
DOE OSTI2022

Boron isotopes in blue diamond record seawater-derived fluids in the lower mantle

Boron is a quintessential crustal element but its conspicuous presence in diamond – a mantle mineral – raises questions about potential subduction pathways for boron and other volatiles. It has been a long-standing goal to characterize the isotopic composition of boron in blue, boron-bearing (Type IIb) diamonds to reveal its origin. Mineral inclusions indicate that Type IIb diamonds crystallize at transition zone to lower mantle depths, meaning that if the boron is subducted it would trace a pathway of volatile elements into the deep mantle. Here, using off-line laser ablation sampling, we present the first boron isotope compositions, along with trace element contents and carbon isotope compositions, of a suite of blue diamonds mainly sourced from the Cullinan diamond mine in South Africa. The ten analyzed blue diamonds have a wide range in δ 11 B, between -9.2 ± 2‰ and -0.5 ± 2‰, compared to the more restricted range for mid-ocean ridge basalts (-7.1 ± 0.9‰). Carbon isotope values for the blue diamonds range between -20.6 and -1.8‰, with a mode at -17‰, significantly more negative than the main mantle mode at -5‰. Combined, the boron and carbon isotope compositions require fluid input from subducted oceanic lithosphere down into deep mantle source regions of blue diamonds. This finding highlights a deep subduction pathway for volatiles to stoke the source regions of deeply-derived magmas.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon

Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime samples. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured samples. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boron diffusion recipes on planar samples. The established parameters are subsequently used to simulate the boron diffusion process on textured samples. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured samples is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured samples to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured samples. The differences between planar and textured samples are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Raman spectroscopic characterization of the core-rim structure in reaction bonded boron carbide ceramics

Raman spectroscopy was used to characterize the microstructure of reaction bonded boron carbide ceramics. Compositional and structural gradation in the silicon-doped boron carbide phase (rim), which develops around the parent boron carbide region (core) due to the reaction between silicon and boron carbide, was evaluated using changes in Raman peak position and intensity. Peak shifting and intensity variation from the core to the rim region was attributed to changes in the boron carbide crystal structure based on experimental Raman observations and ab initio calculations reported in literature. The results were consistent with compositional analysis determined by energy dispersive spectroscopy. The Raman analysis revealed the substitution of silicon atoms first into the linear 3-atom chain, and then into icosahedral units of the boron carbide structure. Thus, micro-Raman spectroscopy provided a non-destructive means of identifying the preferential positions of Si atoms in the boron carbide lattice.

36 MATERIALS SCIENCE↗