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At least 1,801 records · Page 100

Visualization of structural evolution and phase distribution of a lithium vanadium oxide (Li 1.1 V 3 O 8 ) electrode via an operando and in situ energy dispersive X-ray diffraction technique

We present Li 1+n V 3 O 8 (n = 0–0.2) has been extensively investigated as a cathode material for Li ion batteries because of its superior electrochemical properties including high specific energy and good rate capability. In this paper, a synchrotron based energy dispersive X-ray diffraction (EDXRD) technique was employed to profile the phase transitions and the spatial phase distribution of a Li 1.1 V 3 O 8 electrode during electrochemical (de)lithiation in situ and operando. As annealing temperature during the preparation of the Li 1.1 V 3 O 8 material has a strong influence on the morphology and crystallinity, and consequently influences the electrochemical outcomes of the material, Li 1.1 V 3 O 8 materials prepared at two different temperatures, 500 and 300°C (LVO500 and LVO300), were employed in this study. The EDXRD spectra of LVO500 and LVO300 cells pre-discharged at C/18, C/40 and C/150 were recorded in situ, and phase localization and relative intensity of the peaks were compared. For cells discharged at the C/18 rate, although α and β phases were distributed uniformly within the LVO500 electrode, they were localized on two sides of the LVO300 electrode. Discharging rates of C/40 and C/150 led to homogeneous β phase formation in both LVO500 and LVO300 electrodes. Furthermore, the phase distribution as a function of position and (de)lithiation extent was mapped operando as the LVO500 cell was (de)lithiated. In conclusion, the operando data indicate that (1) the lithiation reaction initiated from the side of the electrode facing the Li anode and proceeded towards the side facing the steel can, (2) during discharge the phase transformation from a Li-poor to a Li-rich α phase and the formation of a β phase can proceed simultaneously in the electrode after the first formation of a β phase, and (3) the structural evolution occurring during charging is not the reverse of that during discharge and takes place homogenously throughout the electrode.

25 ENERGY STORAGE↗

Directed evolution of the periodic table: probing the electronic structure of late actinides

Recent investigations of the coordination chemistry and physical properties of berkelium (Z = 97) and californium (Z = 98) have revealed fundamental differences between post-curium elements and lighter members of the actinide series. This review highlights these developments and chronicles key findings and concepts from the last half-century that have helped usher in a new understanding of the evolution of electronic structure in the periodic table.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Structure and chemical stability in perovskite–polymer hybrid photovoltaic materials

Adding polymers to methylammonium lead iodide perovskite solar cell active layers has been previously shown to increase their chemical stability, but stabilization mechanisms in these hybrid materials are poorly understood. We report here on a structural and spectroscopic analysis in a number of perovskite–polymer hybrid materials and compare their stability. We observed that perovskite crystallite sizes decrease with the addition of polymers (polyethylene glycol, polyethyleneimine, poly(acrylic acid) and polyvinylpyrrolidone), and through the use of nanomechanical AFM showed phase contrast in the perovskite–polymer mixture. NMR and single-crystal growth experiments reveal that acid–base interactions, as well as facet-dependent interfacial interactions between perovskite and polymer, contribute to differences in stabilities of these hybrid materials. The polymers investigated tend to suppress the formation of a hydrate crystal phase that accelerates the degradation reaction, and we report that adding poly(acrylic acid) increases significantly the stability of perovskite films under humid air and ambient illumination. Under these controlled degradation conditions, perovskite–poly(acrylic acid) hybrid solar cells maintain stable efficiency for the first 3 days and then slowly degrade over the next 6 days under humid air and illumination, whereas control perovskite solar cells degrade entirely within the first 2 days. Furthermore, these results highlight the importance of choosing suitable functional groups in the polymer phase of perovskite hybrid solar cells to prolong their device lifetime.

36 MATERIALS SCIENCE↗

Vibronic interaction in CO3- photo-detachment: Jahn-Teller effects beyond structural distortion and general formalisms for vibronic Hamiltonians in trigonal symmetries

Recently, the negative ion photoelectron spectrum of CO?? 3 was reported and the second lowest energy band is assigned to the close-lying 3E00 and 3E0 states that undergo Jahn-Teller distortions (Chem. Sci. 2016, 7, 1142). This assignment is based on the Born-Oppenheimer approximation and the assumption of a static Jahn-Teller eect that distorts the CO3 structure from D3h to C2v symmetry. In this work, we employ a 4 states 6 modes vibronic coupling model to investigate the triplet band and uncover the dynamic and non-adiabatic nature of the Jahn-Teller and pseudo- Jahn-Teller interactions in the triplet states. The apparent four peaks progression in the band is studied in depth, and is found to consist of more than four transitions. By comparing the simulated spectra using the full model and the reduced-dimension 2 states 2 modes models, we characterize those transitions. The origin of the complexities of the spectrum is traced to the C-O nonbonding character of the orbitals that lose electron in the photo-detachment process. Methodology-wise, we derive and present the formalisms for arbitrary order expansions of all bimodal trigonal Jahn-Teller and pseudo-Jahn-Teller Hamiltonians in vibrational coordinates.

Seidu, Issaka↗

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

36 MATERIALS SCIENCE↗

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

36 MATERIALS SCIENCE↗

Structure of nanoscale gas bubbles in metals

A usual way to estimate the amount of gas in a bubble inside a metal is to assume thermodynamic equilibrium, i.e., the gas pressure P equals the capillarity force 2γ/R, with γ the surface energy of the host material and R the bubble radius; under this condition there is no driving force for vacancies to be emitted or absorbed by the bubble. In contrast to the common assumption that pressure inside a gas or fluid bubble is constant, we show that at the nanoscale this picture is no longer valid. P and density can no longer be defined as global quantities determined by an equation of state (EOS), but they become functions of position because the bubble develops a core-shell structure. We focus on He in Fe and solve the problem using both continuum mechanics and empirical potentials to find a quantitative measure of this effect. We point to the need of redefining an EOS for nanoscale gas bubbles in metals, which can be obtained via an average pressure inside the bubble. The resulting EOS, which is now size dependent, gives pressures that differ by a factor of two or more from the original EOS for bubble diameters of 1 nm and below.

36 MATERIALS SCIENCE↗

A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures

Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface move towards the expected direction as observed from HAXPES measurements. The In{sub 0.53}Ga{sub 0.47}As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface and suggest an interface state density increasing towards the In{sub 0.53}Ga{sub 0.47}As valence band edge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Charge carrier transport properties in layer structured hexagonal boron nitride

Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (~ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T{sub 0}){sup −α} with α = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm{sup -1}), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

36 MATERIALS SCIENCE↗

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