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3,4-Disubstituted Polyalkythiophenes for High-Performance Thin-Film Transistors and Photovoltaics
Abstract Not Provided
Charge Collection Mechanism in AlGaN/GaN MOS High Electron Mobility Transistors.
Abstract not provided.
Effects of 2 MeV Ge+ Irradiation on AlGaN/GaN High Electron Mobility Transistors.
Abstract not provided.
GaN High Electron Mobility Transistor Degradation:Effect of RF Stress.
Abstract not provided.
GaN High Electron Mobility Transistor Degradation: Effect of RF Stress.
Abstract not provided.
Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
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Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing
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Taxel-addressable matrix of vertical nanowire piezotronic transistors
A tactile sensing matrix includes a substrate, a first plurality of elongated electrode structures, a plurality of vertically aligned piezoelectric members, an insulating layer infused into the piezoelectric members and a second plurality of elongated electrode structures. The first plurality of elongated electrode structures is disposed on the substrate along a first orientation. The vertically aligned piezoelectric members is disposed on the first plurality of elongated electrode structures and form a matrix having columns of piezoelectric members disposed along the first orientation and rows of piezoelectric members disposed along a second orientation that is transverse to the first orientation. The second plurality of elongated electrode structures is disposed on the insulating layer along the second orientation. The elongated electrode structures form a Schottky contact with the piezoelectric members. When pressure is applied to the piezoelectric members, current flow therethrough is modulated.
p-Channel Field-Effect Transistors Based on C60 Doped with Molybdenum Trioxide
Abstract Not Provided
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