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Effect of Isovalent Cation Substitution on the Thermal, Caloric, and Magnetocaloric Properties of the (La{sub 1 –} {sub y}Eu{sub y}){sub 0.7}Pb{sub 0.3}MnO{sub 3} Manganites

Crystalline samples of the (La{sub 1 –} {sub y}Eu{sub y}){sub 0.7}Pb{sub 0.3}MnO{sub 3} (y = 0, 0.2, 0.4, 0.5, 0.6, and 0.8) manganite solid solutions have been grown. Temperature dependences of the specific heat, thermal expansion, and high-intensity magnetocaloric effect have been investigated. A comparative analysis of the effect of isovalent cationic substitution on the thermal and caloric parameters of the ferromagnetic phase transition has been made. It has been shown that the growth of the Eu atom concentration leads to a decrease in the phase transition entropy and an increase in the baric coefficient dT/dp. Field and temperature dependences of the magnetocaloric effect have been established. It is demonstrated that, varying the ratio of cations, one can obtain the solid solutions with the maximum magnetocaloric effect value in fields of up to 6 kOe in a temperature range of 90–340 K. Owing to the similar reduced relative cooling powers, the investigated solid solutions can be used as reference solid-state cooling media in designing the cascade cooling systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Methods and apparatus for cooling electronics

Methods and apparatus are provided for choosing an energy-efficient coolant temperature for electronics by considering the temperature dependence of the electronics' power dissipation. This dependence is explicitly considered in selecting the coolant temperature T.sub.0 that is sent to the equipment. To minimize power consumption P.sub.Total for the entire system, where P.sub.Total=P.sub.0+P.sub.Cool is the sum of the electronic equipment's power consumption P.sub.0 plus the cooling equipment's power consumption P.sub.Cool, P.sub.Total is obtained experimentally, by measuring P.sub.0 and P.sub.Cool, as a function of three parameters: coolant temperature T.sub.0; weather-related temperature T.sub.3 that affects the performance of free-cooling equipment; and computational state C of the electronic equipment, which affects the temperature dependence of its power consumption. This experiment provides, for each possible combination of T.sub.3 and C, the value T.sub.0* of T.sub.0 that minimizes P.sub.Total. During operation, for any combination of T.sub.3 and C that occurs, the corresponding optimal coolant temperature T.sub.0* is selected, and the cooling equipment is commanded to produce it.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Phase transition, crystal water and low thermal expansion behavior of Al{sub 2−2x}(ZrMg){sub x}W{sub 3}O{sub 12}·n(H{sub 2}O)

Al{sub 2−2x}(ZrMg){sub x}W{sub 3}O{sub 12} for 0≤x≤1.0 are synthesized to reduce the phase transition temperature of Al{sub 2}W{sub 3}O{sub 12}. It is found that the incorporation of (ZrMg){sup 6+} into the lattice of Al{sub 2}W{sub 3}O{sub 12} not only reduces its orthorhombic-to-monoclinic phase transition temperature but also elevates its softening temperature, broadening its applicable temperature range considerably. Al{sub 2−2x}(ZrMg){sub x}W{sub 3}O{sub 12} with x<0.5 exhibit low coefficients of thermal expansion (CTEs) and non-hygroscopicity, while those for x≥0.7 are obviously hygroscopic and the CETs decrease with increasing the content of (ZrMg){sup 6+} so that Al{sub 0.2}(ZrMg){sub 0.9}W{sub 3}O{sub 12} and ZrMgW{sub 3}O{sub 12} exhibit negative thermal expansion. Temperature-dependent Raman spectroscopic study shows the hardening of W–O bonds above 373 K which is attributed to the release of crystal water. The effect of crystal water on the thermal expansion property is discussed based on the hydrogen bond between H in crystal water and electronegative O in Al(ZrMg)–O–W linkages. - Graphical abstract: (a and b) Temperature dependent Raman spectra of Al{sub 2−x}(ZrMg){sub x}W{sub 3}O{sub 12} (x=0.1, 0.2), (c and d) Building block of a unit cell of Al{sub 2−x}(ZrMg){sub x}W{sub 3}O{sub 12}·n(H{sub 2}O) and schematic showing the effect of crystal water on Al(Zr, Mg)–O–W linkages. - Highlights: • (ZrMg){sup 6+} reduces orthorhombic-to-monoclinic phase transition of Al{sub 2}W{sub 3}O{sub 12}. • The incorporation of (ZrMg){sup 6+} elevates the softening temperature of Al{sub 2}W{sub 3}O{sub 12}. • Al{sub 2−2x}(ZrMg){sub x}W{sub 3}O{sub 12} (x<0.5) exhibit low CTEs and non-hygroscopicity. • Al{sub 0.2}(ZrMg){sub 0.9}W{sub 3}O{sub 12}·0.8H{sub 2}O and ZrMgW{sub 3}O{sub 12}·2H{sub 2}O present NTE. • Hydrogen bond between H in H{sub 2}O and O in Al(ZrMg)–O–W affects thermal expansion.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

Off-state breakdown voltage, V{sub br}, is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V{sub br}. This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V{sub br} on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V{sub br} upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown voltages approaching 60V for the most deeply recessed devices are seen.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Thermodynamic and Magnetic Properties of the Two-Dimensional Anisotropic Ising Model with Competing Interactions

The two-dimensional anisotropic Ising model with competing interactions is studied on a square lattice by Monte Carlo methods using the Wang–Landau algorithm. The temperature dependences of the main thermodynamic and magnetic parameters are calculated. The distinctive features of temperature dependences of these parameters for different values of the competing interaction are shown. The dependences of the wave number of modulated structures on the ratio of exchange interaction parameters are plotted. The phase diagram of the model is built. The coordinates of the Lifshits point and the localization region of the phases with different wave vector values are calculated by interpolating phase boundaries of the d-iagram.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Influence of the Diagonal and Off-Diagonal Electron–Phonon Interactions on the Formation of Local Polarons and Their Band Structure in Materials with Strong Electron Correlations

For systems with strong electron correlations and strong electron–phonon interaction, we analyze the electron–phonon interaction in local variables. The effects of the mutual influence of electron–electron and electron–phonon interactions that determine the structure of local Hubbard polarons are described. Using a system containing copper–oxygen layers as an example, we consider the competition between the diagonal and off-diagonal interactions of electrons with the breathing mode as the polaron band structure is formed within a corrected formulation of the polaron version of the generalized tight-binding method. The band structure of Hubbard polarons is shown to depend strongly on the temperature due to the excitation of Franck–Condon resonances. For an undoped La{sub 2}CuO{sub 4} compound we have described the evolution of the band structure and the spectral function from the hole dispersion in an antiferromagnetic insulator at low temperatures with the valence band maximum at point (π/2, π/2) to the spectrum with the maximum at point (π, π) typical for the paramagnetic phase. The polaron line width at the valence band top and its temperature dependence agree qualitatively with angle-resolved photoemission spectroscopy for undoped cuprates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices

The magnetoresistance of suspended semiconductor nanostructures with a two-dimensional electron gas structured by periodic square antidot lattices is studied. It is shown that the ballistic regime of electron transport is retained after detaching the sample from the substrate. Direct comparative analysis of commensurability oscillations of magnetoresistance and their temperature dependences in samples before and after suspension is performed. It is found that the temperature dependences are almost identical for non-suspended and suspended samples, whereas significant differences are observed in the nonlinear regime, caused by direct current passage. Commensurability oscillations in the suspended samples are more stable with respect to exposure to direct current, which can be presumably explained by electron–electron interaction enhancement after detaching nanostructures from the high-permittivity substrate.

36 MATERIALS SCIENCE↗

Modeling of early stages of island growth during pulsed deposition: Role of closed compact islands

After a brief review of recent modeling of growth during Pulsed Laser Deposition (PLD), we present the study of a role of adatom interactions on growth of surface islands during PLD in submonolayer regime. We employ kinetic Monte Carlo simulation with reversible growth. Attachment of monomers to islands is irreversible at low temperatures while it becomes reversible at higher temperatures, small islands become unstable with growing temperature. In the case of real system we have to take into account not only diffusion of monomers but also diffusivity of dimers and larger clusters and theirs stability. Our new code allows us to study processes which proceed on different time scales which are typical in PLD experiments: fast deposition (on scale order of 10{sup -5} s) during individual pulses, and relaxation of a system between pulses (on scale order of 0.1 s). We calculate and compare the temperature dependence of island density for two modes pulsed deposition and continuous Molecular Beam Epitaxy (MBE) growth. The island densities in PLD mode are substantially higher than in MBE mode, provided the temperature is sufficiently high. In the case of PLD, we observe anomalous temperature dependence of the island density in a certain temperature interval. It is due to the interplay between a cluster decay time and an interval between pulses. The cluster decay time depends not only on temperature but also on clusters size and shape. The anomalous behavior is caused by the temperature limited stability of the closed--compact clusters. This scenario was revealed for the simplified model with only nearest-neighbor interaction. Now, it is elucidated further and we also include interaction to second and third neighbors. We analyze role of the closed-compact surface island in kinetics of both growth modes. Furthermore, by varying interactions energies, diffusion barrier and parameters of deposition, we compare results of simulations with the PLD experiment for Fe/Mo system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Synthesis, structural, magnetic and electrical properties of Co{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4} (x = 0.0, 0.2) nanoparticles

Graphical abstract: The variations of imaginary part of dielectric permittivity (ε″) of TEG@Co{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4} nanocomposite as a function of temperature and frequency for (A) x = 0.0 and (B) x = 0.2. Display Omitted Highlights: ► Nearly monodisperse Zn{sub x}Co{sub 1−x}Fe{sub 2}O{sub 4} nanocomposite were prepared via hydrothermal method. ► The ac conductivity showed a temperature dependent behavior at low frequencies. ► dc conductivity of Co{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} nanoparticle are found to obey the Arrhenius plot. ► Also these materials may be used in electronic devices and microwave devices. -- Abstract: Co{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4} spinel nanoparticles with Zn concentrations of x = 0.0, 0.2 were prepared by a hydrothermal route in the presence of triethylene glycol (TEG). The structural, magnetic, electrical and dielectric properties of the prepared nanoparticles were studied. The XRD results confirmed the formation of single spinel ferrite structure with crystallite size 9 and 10 nm for x = 0.0 and 0.2 compositions respectively. The lattice parameter (a) increased with increasing Zn concentration. Temperature and frequency dependent electrical and dielectric properties of the prepared ferrites have also been investigated. Our findings show that overall conductivity of Co{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} nanoparticle is lower than that of CoFe{sub 2}O{sub 4} and roughly in the range of 10{sup −11}–10{sup −7} S cm{sup −1} depending strongly temperature and frequency owing to the formation of stable electric bonds between the Zn{sup 2+} and Fe{sup 2+} ions, which localizes Fe{sup 2+} charge carriers. The ac conductivity showed a temperature dependent behavior at low frequencies and temperature independent behavior at high frequencies, which is an indication of ionic conductivity. dc conductivity of Co{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} nanoparticle are found to obey the Arrhenius plot and can be classified into two regions over with activation energy of 0.113 and 0.163 eV in the ranges of 20–40 °C and 70–120 °C, respectively when CoFe{sub 2}O{sub 4} has an activation energy of 0.245 eV.

36 MATERIALS SCIENCE↗

Effects of configurational changes on molecular dynamics in polyvinylidene fluoride and poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymers

Here, we present a comparative study of proton dynamics in unpoled non-ferroelectric polymer polyvinylidene fluoride (PVDF) and in its trifluoroethylene containing ferroelectric copolymer (with 70/30 molar proportion), using quasi-elastic neutron scattering. The neutron data reveal the existence of two distinct types of molecular motions in the temperature range investigated. Moreover, the slower motion, which is characterized in details here, is ascribed to protons jump diffusion along the polymeric carbon chains, while the faster motion could be attributed to localized rotational motion of methylene groups. At temperatures below the Curie point (T-c similar to 385 K) of the composite polymer, the slower diffusive mode experiences longer relaxation times in the ferroelectric blend than in the bare PVDF, although the net corresponding diffusion coefficient remains comparatively the same in both polymers with characteristic activation energy of E-A approximate to 27-33 kJ/mol. This arises because of a temperature dependent jump length r(0), which we observe to be effectively longer in the copolymer, possibly due to the formation of ordered ferroelectric domains below Tc. Above Tc, there is no appreciable difference in r(0) between the two systems. Our observation directly relates the known dependence of Tc on molar ratio to changes in r(0), providing fundamental insight into the ferroelectric properties of PVDF-based copolymers.

36 MATERIALS SCIENCE↗

Structure and dynamics of cadmium telluride studied by x-ray and inelastic neutron scattering

We present a combined study of density functional theory, x-ray diffraction, and inelastic neutron scattering examining the temperature dependent structure and lattice dynamics of commercially available cadmium telluride. A subtle change in the structure is evinced near 80 K, which manifests also in the measured phonon density of states. There is no change to the long-range ordered structure. The implications of the change in relation to structural defects are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Insights into the thermo-hydraulic properties of compacted MX80 bentonite during hydration under elevated temperature

In high-level radioactive waste geological repositories, compacted bentonite undergoes coupled thermo-hydraulic processes due to heat released from a central waste canister and groundwater imbibition from the surrounding host rock. An understanding of these processes is essential for long-term simulations of radionuclide migration and canister corrosion, which requires an understanding of temperature effects on the coupled thermo-hydraulic properties governing these processes. In this study, a tank-scale radial infiltration test was used to investigate water imbibition processes in compacted bentonite under a central heater temperature of 200 °C that simulates high thermal gradients in a repository. Interpretation of this test focuses on evaluation of the liquid water wetting front during hydration and the interpretation of the temperature-dependent transient soil water retention curve (SWRC), thermal conductivity function (TCF), and hydraulic conductivity function (HCF). The SWRC during imbibition follows a temperature-dependent wetting path. Temperature effects on the hydraulic conductivity of bentonite in saturated conditions had the greatest effect on the shape of the HCF, with minimal temperature effects at higher suctions. The transient thermal conductivity data matched well with a new TCF linked with the SWRC shape. Although the bentonite layer was restrained, local deformations during hydration may have affected the shapes of the TCF and HCF.

Engineering↗

A survey of unified constitutive theories

The state of the art of time temperature dependent elastic viscoplastic constitutive theories which are based on the unified approach werre assessed. This class of constitutive theories is characterized by the use of kinetic equations and internal variables with appropriate evolutionary equations for treating all aspects of inelastic deformation including plasticity, creep, and stress relaxation. More than 10 such unified theories which are shown to satisfy the uniqueness and stability criteria imposed by Drucker's postulate and Ponter's inequalities are identified. The theories are compared for the types of flow law, kinetic equation, evolutionary equation of the internal variables, and treatment of temperature dependence. The similarities and differences of these theories are outlined in terms of mathematical formulations and illustrated by comparisons of theoretical calculations with experimental results which include monotonic stress-strain curves, cyclic hysteresis loops, creep and stress relaxation rates, and thermomechanical loops. Numerical methods used for integrating these stiff time temperature dependent constitutive equations are reviewed.

Chan, K. S.↗

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The structure, thermal expansion and phase transition properties of Ho{sub 2}Mo{sub 3−x}W{sub x}O{sub 12} (x = 0, 1.0, 2.0) solid solutions

Graphical abstract: A polymorph with Gd{sub 2}Mo{sub 3}O{sub 12}-type structure (space group: Pba2) for negative thermal expansion material Ho{sub 2}Mo{sub 3}O{sub 12} is observed above 700 °C, this polymorphism could be effectively supressed by W-substiution for Mo, the give the temperature dependence of Pba2 phase contents for Ho{sub 2}Mo{sub 3−x}W{sub x}O{sub 12} (x = 0.0, 1.0, 2.0). - Highlights: • The solid solution Ho{sub 2}Mo{sub 3−x}W{sub x}O{sub 12} was investigated by in situ X-ray diffraction. • It is found that the substitution slightly influence thermal expansion property. • A polymorph of Ho{sub 2}Mo{sub 3}O{sub 12} with Pba2 space group was observed above 700 °C. • The W-substitution for Mo effectively suppresses this transformation. - Abstract: Three solid solutions of Ho{sub 2}Mo{sub 3−x}W{sub x}O{sub 12}(x = 0, 1.0, 2.0) were prepared by solid state reaction method, the temperature dependent in-situ X-ray diffraction and thermal analysis were performed to investigate their structure and thermal expansion. All samples have orthorhombic structure(space group Pbcn# 60) with negative thermal expansion at the room temperature. the substitution of W for Mo enlarges the lattice constant and slightly influences the negative thermal expansion. An irreversible phase transformation to the Pba2 phase(Tb{sub 2}Mo{sub 3}O{sub 12} structure) was observed at high temperature for Mo-rich samples. This ploymorphism could be effectively suppressed by the W-substitution for Mo, this phenomenon could be explained by the lower electronegativity of W{sup 6+} than Mo{sup 6+}.

36 MATERIALS SCIENCE↗

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Theoretical Model Study of Interplay of Coulomb Interaction and Electron-Phonon Interaction in the Thermal Properties of Monolayer Graphene

We propose here a tight-binding (TB) model Hamiltonian for monolayer graphene-on-substrate describing the nearest-neighbor-hopping, on-site Coulomb interaction on the sub-lattices and the electron-phonon interaction under the high-frequency limit of phonon vibration. Applying Lang-Firsov canonical transformation, the electron and phonon systems are decoupled in the atomic Hamiltonian, such that the effective Coulomb interaction and effective nearest-neighbor-hopping integral respectively appear as U-tilde =U−2t{sub 1}λ and t-tilde {sub 1}=t{sub 1}e{sup ((−t{sub 1}λ)/(ω{sub 0}))}, where U, t{sub 1}, λ and ω{sub 0} are respectively Coulomb energy, nearest-neighbor-hopping integral, electron-phonon (e-ph) coupling and phonon frequency. The effective Coulomb interaction in the Hamiltonian is considered within mean-field approximation. The Hamiltonian is solved by Zubarev’s Green’s function technique. The temperature-dependent electronic entropy and specific heat are calculated from the free energy of graphene system and are computed numerically. The temperature-dependent electronic specific heat exhibits a charge gap peak at room temperature arising due to the effect of Coulomb interaction and electron-phonon interaction. The evolution of these peaks in specific heat is investigated by varying the model parameters of the system.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Synthesis and structure of a new family of 3d-4f heterometallic compounds Rb{sub 7}LnFe{sub 6}O{sub 2}(PO{sub 4}){sub 8} (Ln=Sm, Eu, Gd, Dy): Magnetic properties of the Sm-, Gd-, Dy-derivatives

A new family of mixed lanthanide(III) and iron(III) oxo-phosphate phases, Rb{sub 7}LnFe{sub 6}O{sub 2}(PO{sub 4}){sub 8} (Ln=Sm 1, Eu 2, Gd 3, Dy 4), was isolated by using a high-temperature, solid-state method in molten-salt media. The X-ray single-crystal structure analysis shows that these isomorphic derivatives crystallize in a triclinic space group P-1 (no. 2); Z=1. The 3-D framework of these 3d-4f oxo-phosphates are comprised of LnO{sub 6} octahedral, FeO{sub 5} trigonal bipyramidal (tbp), and {mu}{sub 3}-oxo [Fe{sub 4}O{sub 18}] tetrameric units interconnected through PO{sub 4} tetrahedra. The preliminary results of the temperature-dependent magnetic susceptibility measurements for selected compounds (1, 3, 4) reveal antiferromagnetic-like behavior. 1 shows a weak antiferromagnetric ordering at T{sub N}={approx}7 K while others show little evidence of long-range magnetic order down to 2 K. All three compounds have measured magnetic moments significantly smaller than the expected values. - Graphical abstract: The extended framework is described by the connectivity of three distinct types of paramagnetic units. The temperature-dependent, lower than expected effective magnetic moments are reported. Highlights: Black-Right-Pointing-Pointer A new family of mixed lanthanide(III) and iron(III) oxo-phosphates is isolated. Black-Right-Pointing-Pointer Features PO{sub 4}-linked paramagnetic units of LnO{sub 6}, FeO{sub 5}, and {mu}{sub 3}-oxo [Fe{sub 4}O{sub 18}]. Black-Right-Pointing-Pointer Sm-derivative orders at T{sub N}{approx}7 K while Gd- and Dy-derivatives show absence of order.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

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