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Monitoring local heating around an interventional MRI antenna with RF radiometry

Purpose: Radiofrequency (RF) radiometry uses thermal noise detected by an antenna to measure the temperature of objects independent of medical imaging technologies such as magnetic resonance imaging (MRI). Here, an active interventional MRI antenna can be deployed as a RF radiometer to measure local heating, as a possible new method of monitoring device safety and thermal therapy. Methods: A 128 MHz radiometer receiver was fabricated to measure the RF noise voltage from an interventional 3 T MRI loopless antenna and calibrated for temperature in a uniformly heated bioanalogous gel phantom. Local heating (ΔT) was induced using the antenna for RF transmission and measured by RF radiometry, fiber-optic thermal sensors, and MRI thermometry. The spatial thermal sensitivity of the antenna radiometer was numerically computed using a method-of-moment electric field analyses. The gel’s thermal conductivity was measured by MRI thermometry, and the localized time-dependent ΔT distribution computed from the bioheat transfer equation and compared with radiometry measurements. A “H-factor” relating the 1 g-averaged ΔT to the radiometric temperature was introduced to estimate peak temperature rise in the antenna’s sensitive region. Results: The loopless antenna radiometer linearly tracked temperature inside a thermally equilibrated phantom up to 73 °C to within ±0.3 °C at a 2 Hz sample rate. Computed and MRI thermometric measures of peak ΔT agreed within 13%. The peak 1 g-average temperature was H = 1.36 ± 0.02 times higher than the radiometric temperature for any media with a thermal conductivity of 0.15–0.50 (W/m)/K, indicating that the radiometer can measure peak 1 g-averaged ΔT in physiologically relevant tissue within ±0.4 °C. Conclusions: Active internal MRI detectors can serve as RF radiometers at the MRI frequency to provide accurate independent measures of local and peak temperature without the artifacts that can accompany MRI thermometry or the extra space needed to accommodate alternative thermal transducers. A RF radiometer could be integrated in a MRI scanner to permit “self-monitoring” for assuring device safety and/or monitoring delivery of thermal therapy.

60 APPLIED LIFE SCIENCES↗

AlCl 3 -Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al

The adsorption of AlCl 3 on Si(100) and the effect of annealing the AlCl 3 -dosed substrate were studied to reveal key surface processes for the development of atomic-precision, acceptor-doping techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl 3 readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing the AlCl 3 -dosed substrate at temperatures below 450 °C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 °C and above, and Cl desorption was observed for temperatures beyond 450 °C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10 20 cm –3 across a ~2.7 nm-thick δ-doped region. Here, the Al concentration achieved here and the processing parameters utilized promote AlCl 3 as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Transmission Electron Microscopy and Electron Energy-Loss Spectroscopy Studies of Hole-Selective Molybdenum Oxide Contacts in Silicon Solar Cells

In this study, substochiometric hole-selective molybdenum oxide (MoO x ) contacts in crystalline silicon (c-Si) solar cells were investigated by a combination of transmission electron microscopy (TEM) and spatially resolved electron energy-loss spectroscopy (SR-EELS). It was observed that a ≈ 4 nm SiO x interlayer grows at the MoO x /c-Si interface during the evaporation of MoO x over a c-Si substrate. SR-EELS analyses revealed the presence of a 1.5 nm diffused MoO x /indium tin oxide (ITO) interface in both as-deposited and annealed samples. Moreover, the presence of a 1 nm thin layer with a lower oxidation state of Mo was detected at the SiO x /MoO x interface in an as-deposited state, which disappears upon annealing. Altogether, it was evident that no hole-blocking interlayer is formed at the MoO x /ITO interface during annealing and homogenization of the MoO x layer takes place during the annealing process. Furthermore, device simulations revealed that efficient hole collection is dependent on MoO x work function and that reduction in the work function of MoO x results in loss of band bending and negatively impacts hole selectivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-force NdFeB-based magnetic tweezers device optimized for microrheology experiments

We present the design, calibration, and testing of a magnetic tweezers device that employs two pairs of permanent neodymium iron boron magnets surrounded by low-carbon steel focusing tips to apply large forces to soft materials for microrheology experiments. Our design enables the application of forces in the range of 1-1800 pN to {approx}4.5 {mu}m paramagnetic beads using magnet-bead separations in the range of 0.3-20 mm. This allows the use of standard coverslips and sample geometries. A high speed camera, custom LED-based illumination scheme, and mechanically stabilized measurement platform are employed to enable the measurement of materials with viscoelastic moduli as high as {approx}1 kPa.

36 MATERIALS SCIENCE↗

A new ion sensing deep atomic force microscope

Here we describe a new deep atomic force microscope (AFM) capable of ion sensing. A novel probe assembly incorporates a micropipette that can be used both for sensing ion currents and as the tip for AFM imaging. The key advance of this instrument over previous ion sensing AFMs is that it uses conventional micropipettes in a novel suspension system. This paper focuses on sensing the ion current passively while using force feedback for the operation of the AFM in contact mode. Two images are obtained simultaneously: (1) an AFM topography image and (2) an ion current image. As an example, two images of a MEMS device with a microchannel show peaks in the ion current as the pipette tip goes over the edges of the channel. This ion sensing AFM can also be used in other modes including tapping mode with force feedback as well as in non-contact mode by utilizing the ion current for feedback, as in scanning ion conductance microscopy. The instrument is gentle enough to be used on some biological samples such as plant leaves.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10{sup −3} ∼ 10{sup −4} ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Cryogen-free variable temperature scanning SQUID microscope

Scanning Superconducting QUantum Interference Device (SQUID) microscopy is a powerful tool for imaging local magnetic properties of materials and devices, but it requires a low-vibration cryogenic environment, traditionally achieved by thermal contact with a bath of liquid helium or the mixing chamber of a “wet” dilution refrigerator. We mount a SQUID microscope on the 3 K plate of a Bluefors cryocooler and characterize its vibration spectrum by measuring SQUID noise in a region of sharp flux gradient. By implementing passive vibration isolation, we reduce relative sensor-sample vibrations to 20 nm in-plane and 15 nm out-of-plane. A variable-temperature sample stage that is thermally isolated from the SQUID sensor enables measurement at sample temperatures from 2.8 K to 110 K. We demonstrate these advances by imaging inhomogeneous diamagnetic susceptibility and vortex pinning in optimally-doped YBCO above 90 K.

47 OTHER INSTRUMENTATION↗

Surface processing for bulk niobium superconducting radio frequency cavities

The majority of niobium cavities for superconducting particle accelerators continue to be fabricated from thin-walled (2-4mm) polycrystalline niobium sheet and, as a final step, require material removal from the radio frequency (RF) surface in order to achieve performance needed for use as practical accelerator devices. More recently bulk niobium in the form of, single-or large-grain slices cut from an ingot has become a viable alternative for some cavity types. In both cases the so-called damaged layer must be chemically etched or electrochemically polished away. The methods for doing this date back at least four decades, however, vigorous empirical studies on real cavities and more fundamental studies on niobium samples at laboratories worldwide have led to seemingly modest improvements that, when taken together, constitute a substantial advance in the reproducibility for surface processing techniques and overall cavity performance. This article reviews the development of niobium cavity surface processing, and summarizes results of recent studies. We place some emphasis on practical details for real cavity processing systems which are difficult to find in the literature but are, nonetheless, crucial for achieving the good and reproducible cavity performance. New approaches for bulk niobium surface treatment which aim to reduce cost or increase performance, including alternate chemical recipes, barrel polishing and 'nitrogen doping' of the RF surface, continue to be pursued and are closely linked to the requirements for surface processing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High magnetic field response of superconductivity dome in quantum artificial high−⁢𝑇 𝐶 superlattices with variable geometry

It is known that cuprate artificial high-𝑇 𝐶 superlattices (AHTS) with period 𝑑, composed of quantum wells confining interface space charge in stoichiometric Mott insulator layers (𝑆), with thickness 𝐿, at the interface with overdoped normal metallic cuprate layers (𝑁) show a superconducting dome by tuning the geometric 𝐿 over 𝑑 ratio of the SNSN superlattice with the top predicted by quantum material design engineering quantum size effects. Here we report high-field magnetotransport measurements up to 41 Tesla of AHTS across the entire superconducting dome. The results show the universal upward-concave behavior of the temperature-dependent upper critical magnetic field in low-𝑇 𝐶 samples at the rising edge and drop edge of the dome, providing strong evidence consistent with two-band superconductivity in agreement with multigap theory used for quantum design of the SNSN superlattices. The measured superconducting coherence length demonstrates that atomic-scale engineering controls not only the critical temperature but also the intrinsic pair size at Fano-Feshbach resonances physics paving the way toward next-generation quantum devices and shedding light on unconventional superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hopping crossover and high-temperature superspin glass behavior in Ni films deposited on MoS 2

Realizing the potential of MoS 2 and other two-dimensional semiconductors in spintronic devices requires a fundamental understanding of their interaction with ferromagnetic metals. We have investigated the transport and magnetic properties of thin Ni films grown on single-crystal MoS 2 substrates. The Ni is found to have a granular morphology with an average grain size of approximately 2 nm. Like previously investigated granular Ni/insulator composites below the percolation threshold, transport is found to proceed via hopping. However, our Ni/MoS 2 sample exhibits a dual crossover: activated hopping to 𝑇−1/2 variable-range hopping at a higher temperature and then a transition to power-law behavior at a lower temperature. The magnetoresistance was used as a novel probe for uncovering superspin-glass-like behavior above room temperature in the Ni/MoS 2 nanostructure, which also exhibits a collective ferromagnetic state at very low temperatures, reminiscent of superferromagnetism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Noise Radar Approach for Interrogating SAW Sensors Using Software Defined Radio

Passive, wireless surface acoustic wave (SAW) sensor systems can be approached from a radar perspective, where the SAW device is thought of as a cooperative target. Here, this paper investigates the use of a commercial-off-the-shelf software defined radio to interrogate wireless SAW sensors with a randomly generated interrogation pulse. The USRP B200mini is utilized as the transceiver platform with custom field-programmable gate array (FPGA) modifications to generate the random interrogation waveform and provide synchronization and buffering to the received signal. Each transmit sample bit in the FPGA is fed by an independent linear-feedback shift register, which generates pseudo-random I and Q samples for the interrogation pulse. An RF daughterboard has also been developed and integrated with the B200mini to increase the transmit power, provide filtering of the RF signals, and switch a signal antenna between the transmit and receive channels. Radio control and matched filter correlator post-processing are accomplished using Python. Design and implementation details for the FPGA modifications, RF daughterboard, and post-processing are discussed. Lastly, the system is demonstrated by wirelessly interrogating SAW temperature sensors at 915 MHz.

47 OTHER INSTRUMENTATION↗

Synchronized Wireless Measurement of High-Voltage Power System Frequency Using Mobile Embedded Systems

This paper focuses on synchronized wireless measurement of high-voltage (HV) power system frequency using mobile embedded systems (MESs) integrated with a wireless electric field sensor (WEFS). Unlike traditional synchronized frequency measurement devices, which rely on potential transformers and current transformers physically connected to system elements, a WEFS is used to realize wireless signal acquisition in the vicinity of any HV apparatus. The MES performs real-time frequency estimation using a recursive discrete Fourier transform based algorithm. Network time protocol (NTP) is used for time synchronization, increasing the system flexibility by eliminating global positioning system reliance. An NTP-based synchronized sampling control method is proposed and implemented in MES to compensate the sampling time error caused by local time drift and division residue. The proposed system has the advantages of portability and lower cost, making it highly accessible and useful for a wide array of synchronized frequency measurement applications. Experiment results verify the accuracy and effectiveness of the proposed system.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Impact of Radiation on the Electronic Structure of MoS 2

Electrons in a semiconductor occupy states within certain energy ranges, called energy bands. The position of the Fermi level with respect to these energy bands determines the charge carrier type of the semiconductor. Molybdenum disulfide (MoS 2 ) is a two-dimensional, n-type semiconductor with potential applications in flexible electronics, transparent electronics, and optoelectronics. Electronic devices containing MoS 2 could be used in environments where radiation affects device performance. Thus, it is important to determine the impact of radiation on MoS 2 . A one-molecule-thick layer of MoS 2 (monolayer) and a two-molecule-thick layer of MoS 2 (bilayer) were placed onto different areas of a gold (Au) substrate containing 1.2-µm-deep holes. The MoS 2 was suspended over these holes but supported by the Au elsewhere on the substrate. This sample configuration was used to determine the effect of He + radiation on the electronic properties of the suspended MoS 2 and the Au-supported MoS 2 . The MoS 2 was irradiated by He+ ions in two stages. The energy bands of the MoS 2 were measured with respect to the Fermi level via photoelectron emission microscopy before irradiation and after each irradiation stage. From each measurement, the charge carrier type of the MoS 2 after the corresponding irradiation stage was determined. The Fermi levels of the suspended monolayer and bilayer decreased by ≈0.15 eV with respect to the bands during the first irradiation stage During the second irradiation stage, however, the Fermi levels didn’t change significantly. This lack of change supports the existence of a radiation threshold, above which the electronic properties of suspended MoS 2 remain the same. The Fermi levels of the supported monolayer and bilayer increased over the cumulative irradiation and didn’t show evidence of a threshold. Thus, suspended MoS 2 becomes less n-type as it is irradiated. Supported MoS 2 , however, becomes more n-type as it is irradiated. These results could inform the development of radiation tolerance standards for MoS 2 , and thus, radiation-tolerant MoS 2 -based electronics.

36 MATERIALS SCIENCE↗

NANOFLUIDICS REVOLUTION: PROTECTING THE WORLD ONE DROP AT A TIME

Nanofluidics is a technology that involves the transport of very small liquid samples, on the order of micro- or pico-liters, confined to nanoscale structures. Scientists at the Savannah River National Laboratory (SRNL) in collaboration with the University of South Carolina are investigating a new measurement technique using nanofluidics for fast and easy verification of the presence of special nuclear material (SNM) in aqueous solutions. Research is specifically geared toward developing small-footprint high sensitivity lab-on-a-chip devices for the detection and separation of plutonium. It also laid the groundwork for developing ultra-sensitive sensors using in structural health monitoring system for in situ, noninterrupted detection of the leaching and migration of radionuclides outside the cementitious barriers for nuclear waste storage facilities. This innovative method has promise for the nuclear industry's processing technologies, environmental protection, and safeguards.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Simple correction for the sample shape and radial offset effects on SQUID magnetometers: Magnetic measurements on Ln{sub 2}O{sub 3} (Ln=Gd, Dy, Er) standards

An increased focus on magnetic measurements of oriented single crystals, thin films, and magnetically dilute systems has led to a demand for the measurement of weak magnetic moments. This level of sensitivity and precision can be achieved on SQUID magnetometers by decreasing the size of the detection coils. However, the smaller detection coils can amplify two errors in the magnitude of the measured moment, the sample shape and radial offset effects, which were small and typically unaccounted for on previous magnetometers. We report a simple method to determine the radial offset of a sample by taking advantage of the two basic scan modes, DC and lock-in, typically used on magnetometers. This technique allows for the correction of the sample shape and radial offset effects in order to obtain the true moment of a sample. To show the efficacy of this technique, we report the magnetic properties of Ln{sub 2}O{sub 3} (Ln=Gd, Dy, Er). - Graphical abstract: Correction for the sample shape and radial offset effects on SQUID magnetometers using a combination of DC and VSM scan data. - Highlights: • Sample shape and radial offset effects alter the moment measured by magnetometers. • We present a simple method to correct for these sample effects on magnetometers. • We measure magnetic susceptibilities of Ln{sub 2}O{sub 3} to show the efficacy of this method.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Mode imaging and loss evaluation of semiconductor waveguides

An imaging and loss evaluation method for semiconductor waveguides coupled with non-doped quantum wells is presented. Using the internal emission of the wells as a probe light source, the numbers and widths of the modes of waveguides with various ridge sizes were evaluated by CCD imaging, and the obtained values were consistent with effective index method calculation. Waveguide internal losses were obtained from analyses of the Fabry-Pérot fringes of waveguide emission spectra. We quantified the quality of 29 single-mode waveguide samples as an internal loss and variation of 10.2 ± 0.6 cm{sup −1}.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

From Modules to Atoms: Techniques and Characterization for Identifying and Understanding Device-Level Photovoltaic Degradation Mechanisms

This report documents how degraded modules are analyzed for the characterization of cell-level performance reduction. The primary degradation topics presented here are 1) potential-induced degradation, 2) defect metastability and impurity diffusion, and 3) partial-shading-induced reverse-bias breakdown. Imaging techniques, such as electroluminescence imaging, photoluminescence imaging, and lock-in thermography provide spatial information of full modules on the meter scale. Area of interest can then be imaged with higher spatial resolution by zooming in with fields of view near the mm scale. We document procedures for coring cell samples from selected regions of interest using mechanical drilling. The small samples are then of suitable size for various microscopic analyses using techniques such as scanning electron microscopy, time-of-flight secondary ion spectrometry, atomic force microscopy, electron beam induced current, transmission electron microscopy, and atom probe tomography, which can provide chemical, structural, and electrical characterization down to the atomic scale.

14 SOLAR ENERGY↗

Methods for Color Center Preserving Hydrogen‐Termination of Diamond

Abstract Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near‐surface fluorescent color centers, an essential process in fabricating devices such as diamond field‐effect transistors and chemical sensors, and a required first step for realizing families of more complex terminations through subsequent chemical processing. In all these cases, termination is typically achieved using hydrogen plasma sources that can etch or damage the diamond, as well as deposited materials or embedded color centers. This work explores alternative methods for lower‐damage hydrogenation of diamond surfaces, specifically the annealing of diamond samples in high‐purity, non‐explosive mixtures of nitrogen and hydrogen gas, and the exposure of samples to microwave hydrogen plasmas in the absence of intentional stage heating. The effectiveness of these methods are characterized by x‐ray photoelectron spectroscopy (XPS), and comparison of the results to density‐functional modelling of the surface hydrogenation energetics implicates surface oxygen ligands as the primary factor limiting the termination quality of annealed samples. Finally, photoluminescence (PL) spectroscopy is used to verify that both the annealing and reduced sample temperature plasma methods are non‐destructive to near‐surface ensembles of nitrogen‐vacancy (NV) centers, in stark contrast to plasma treatments that use heated sample stages.

36 MATERIALS SCIENCE↗

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