Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Quantum engineering”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,801 records · Page 100

Probing the Transformation of Boron Nitride Catalysts under Oxidative Dehydrogenation Conditions

Hexagonal boron nitride (h-BN) and boron nitride nanotubes (BNNTs) were recently reported as highly selective catalysts for the oxidative dehydrogenation (ODH) of alkanes to olefins in the gas phase. Previous studies revealed a substantial increase in surface oxygen content after exposure to ODH conditions (heating to ca. 500 °C under a flow of alkane and oxygen); however, the complexity of these materials has thus far precluded an in-depth understanding of the oxygenated surface species. In this contribution, we combine advanced NMR spectroscopy experiments with scanning electron microscopy (SEM) and soft X-ray absorption spectroscopy (XAS) to characterize the molecular structure of the oxygen functionalized phase that arises on h-BN and BNNTs following catalytic testing for ODH of propane. The pristine BN materials are readily oxidized and hydrolyzed under ODH reaction conditions to yield a phase consisting of three coordinate boron sites with variable numbers of hydroxyl and bridging oxide groups which is denoted B(OH) x O 3-x (where x = 0-3). Evidence for this robust oxide phase revises previous literature hypotheses of hydroxylated BN edges as the active component on h-BN.

03 NATURAL GAS↗

A strongly coupled Λ-type micromechanical system

We study a classical Λ-type three-level system based on three high-Q micromechanical beam resonators embedded in a gradient electric field. By modulating the strength of the field at the difference frequency between adjacent beam modes, we realize strong dynamic two-mode coupling, via the dielectric force. Driving adjacent pairs simultaneously, we observe the formation of a purely mechanical “dark” state and an all-phononic analog of coherent population trapping—signatures of strong three-mode coupling. The Λ-type micromechanical system is a natural extension of previously demonstrated “two-level” micromechanical systems and adds to the toolbox for engineering of all-phononic micromechanical circuits and arrays.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The enhanced ferroelectricity in Sr 1-δ TiO 3 /BaTiO 3 superlattices with Sr deficiency

Here we report the tunable ferroelectricity in superlattices of (Sr 1-δ TiO 3 )n/(BaTiO 3 ) 8 with δ ≈ 5% and the maximally enhanced ferroelectricity is found in the n = 6 superlattice. The room-temperature remnant polarization of n = 6 is enhanced by 70% and 1120% compared to those of BaTiO 3 and Sr 1-δ TiO 3 thin films, respectively. The ferroelectric transition temperature of n = 6 is 40 K higher than that of the BaTiO 3 film, and is independent of the measurement frequency. The dependence of remnant field 2Pr on n coincides well with the n dependence of γ/α, which is ratio between out-of-plane and in-plane octahedral rotation angles. It thus suggests a strong correlation between the octahedral rotation pattern and the ferroelectric distortion. Furthermore, our study demonstrates the importance of constructing superlattices to enhance the ferroelectric properties of the defect-engineered materials to be better than the pristine materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quasiballistic quantum transport through Ge/Si core/shell nanowires

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry–Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2 /h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1–3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.

42 ENGINEERING↗

High-Performance electronics at ultra-low power consumption for space applications: From superconductor to nanoscale semiconductor technology

A detailed review of Sandia's work in ultralow power dissipation electronics for space flight applications, including superconductive electronics, new advances in quantum well structures, and ultra-high purity 3-5 materials, and recent advances in micro-electro-optical-mechanical systems (MEMS) is presented. The superconductive electronics and micromechanical devices are well suited for application in micro-robotics, micro-rocket engines, and advanced sensors.

Duncan, Robert V.↗

Alloy Design Workbench-Surface Modeling Package Developed

NASA Glenn Research Center's Computational Materials Group has integrated a graphical user interface with in-house-developed surface modeling capabilities, with the goal of using computationally efficient atomistic simulations to aid the development of advanced aerospace materials, through the modeling of alloy surfaces, surface alloys, and segregation. The software is also ideal for modeling nanomaterials, since surface and interfacial effects can dominate material behavior and properties at this level. Through the combination of an accurate atomistic surface modeling methodology and an efficient computational engine, it is now possible to directly model these types of surface phenomenon and metallic nanostructures without a supercomputer. Fulfilling a High Operating Temperature Propulsion Components (HOTPC) project level-I milestone, a graphical user interface was created for a suite of quantum approximate atomistic materials modeling Fortran programs developed at Glenn. The resulting "Alloy Design Workbench-Surface Modeling Package" (ADW-SMP) is the combination of proven quantum approximate Bozzolo-Ferrante-Smith (BFS) algorithms (refs. 1 and 2) with a productivity-enhancing graphical front end. Written in the portable, platform independent Java programming language, the graphical user interface calls on extensively tested Fortran programs running in the background for the detailed computational tasks. Designed to run on desktop computers, the package has been deployed on PC, Mac, and SGI computer systems. The graphical user interface integrates two modes of computational materials exploration. One mode uses Monte Carlo simulations to determine lowest energy equilibrium configurations. The second approach is an interactive "what if" comparison of atomic configuration energies, designed to provide real-time insight into the underlying drivers of alloying processes.

Abel, Phillip B.↗

Reducing Surface Recombination Velocity of Methylammonium-Free Mixed-Cation Mixed-Halide Perovskites via Surface Passivation

We control surface recombination in the mixed-cation, mixed-halide perovskite, FA0.83Cs0.17Pb(I0.85Br0.15)3, by passivating nonradiative defects with the polymerizable Lewis base (3-aminopropyl)trimethoxysilane (APTMS). We demonstrate average minority carrier lifetimes >4 µs, nearly single exponential monomolecular photoluminescence decays, and high external photoluminescence quantum efficiencies (>20%, corresponding to ~97% of the maximum theoretical quasi-Fermi-level splitting) at low excitation fluence. We confirm both the composition and valence band edge position of the FA0.83Cs0.17Pb(I0.85Br0.15)3 perovskite using multi-institutional, cross-validated, X-ray photoelectron spectroscopy and UV photoelectron spectroscopy measurements. We extend the APTMS surface passivation to higher bandgap double-cation (FA and Cs) compositions (1.7, 1.75, and 1.8 eV) as well as the widely used triple-cation (FA, MA, and Cs) composition. Finally, we demonstrate that the average surface recombination velocity decreases from ~1000 to ~10 cm/s post APTMS passivation for FA0.83Cs0.17Pb(I0.85Br0.15)3. Our results demonstrate that surface-mediated recombination is the primary nonradiative loss pathway in many methylammonium (MA)-free mixed-cation mixed-halide films with a range of different bandgaps, which is a problem observed for a wide range of perovskite active layers and reactive electrical contacts. Our study also provides insights to develop passivating molecules that help reduce surface recombination in MA-free mixed-cation mixed-halide films and indicates that surface passivation and contact engineering will enable near-theoretical device efficiencies with these materials.

14 SOLAR ENERGY↗

High Quantum Efficiency Uni-Traveling-Carrier Photodiode for Optical to Microwave Transduction

Modern Quantum Information Systems (QIS) employ optical photons for long distance communication, operating at ambient temperature, between microwave cavities, which house microwave photons used in quantum computing and microwave detection. These optical photons, carried by fiber-optic or free-space links, offer a low-cost, uncooled alternative to bulky, expensive microwave coaxial cables, which are lossy, susceptible to EMI, and a significant thermal conductor to the outside ambient environment. To convert between these two types of photons and implement these optical interconnects, it is necessary to develop a high-performance photodetector for optical to microwave transduction. Freedom Photonics and the University of Virginia have a well-established partnership in developing high-performance photodiodes. In this Phase I effort, we collaborated in designing, fabricating, and testing an advanced, high-speed, high quantum efficiency prototype photodiode for transduction from optical to microwave frequencies. These devices have applications not only in quantum computing and axion detection, but also in other optical-cryogenic interconnect applications, in fields such as radio astronomy and quantum cryptography, as well as in quantum metrology and plasmonics. During this Phase I DOE program, we designed, fabricated, and tested prototype PIN GaAs photodiodes which targeted the performance parameters defined by the program. This process involved identifying a new target wavelength, different from that proposed initially, based on conversations with the Oak Ridge National Lab customer. We designed an epitaxial stack, optimized in theory for ≥95% quantum efficiency at 795 nm, ≥5 GHz, per the target objectives of the program. Additionally, we designed a fabrication process and associated mask plates for top-illuminated, AR-coated devices with device diameters ranging from 50 µm to 800 µm. Using these, we fabricated two 3” wafer quarters of devices, and characterized the devices’ dark current, quantum efficiency, and bandwidth for various device diameters. The prototype devices achieved a quantum efficiency of 89% at the target 795 nm detection wavelength. The bandwidth of the devices proved tricky to characterize, but a 50 µm diameter device shows a 3-dB bandwidth of at least 1.6 GHz, possibly a full 5 GHz, depending on the measurement setup. In the future, we plan to characterize the bandwidth of these devices using an impulse response measurement. All tasks for the Phase I were successfully completed, and sample prototype devices were provided to Oak Ridge National Lab Quantum Information Science researchers. The work performed in Phase I has established a strong foundation for future design and fabrication cycles in Phase II, if granted. The early tests at Oak Ridge National Labs will provide guidance for the required photodiode performance in devices to be supplied in Phase II.

42 ENGINEERING↗

Oxidation and pyrolysis of methyl propyl ether

The ignition, oxidation, and pyrolysis chemistry of methyl propyl ether (MPE) was probed experimentally at several different conditions, and a comprehensive chemical kinetic model was constructed to help understand the observations, with many of the key parameters computed using quantum chemistry and transition state theory. Experiments were carried out in a shock tube measuring time variation of CO concentrations, in a flow tube measuring product concentrations, and in a rapid compression machine (RCM) measuring ignition delay times. The detailed reaction mechanism was constructed using the Reaction Mechanism Generator software. Sensitivity and flux analyses were used to identify key rate and thermochemical parameters, which were then computed using quantum chemistry to improve the mechanism. Validation of the final model against the 1-20 bar 600-1500 K experimental data is presented with a discussion of the kinetics. The model is in excellent agreement with most of the shock tube and RCM data. Strong non-monotonic variation in conversion and product distribution is observed in the flow-tube experiments as the temperature is increased, and unusually strong pressure dependence and significant heat release during the compression stroke is observed in the RCM experiments. These observations are largely explained by a close competition between radical decomposition and addition to O2 at different sites in MPE; this causes small shifts in conditions to lead to big shifts in the dominant reaction pathways. The validated mechanism was used to study the chemistry occurring during ignition in a diesel engine, simulated using Ignition Quality Test (IQT) conditions. At the IQT conditions, where the MPE concentration is higher, bimolecular reactions of peroxy radicals are much more important than in the RCM.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A parametrically programmable delay line for microwave photons

Delay lines that store quantum information are crucial for advancing quantum repeaters and hardware efficient quantum computers. Traditionally, they are realized as extended systems that support wave propagation but provide limited control over the propagating fields. Here, we introduce a parametrically addressed delay line for microwave photons that provides a high level of control over the stored pulses. By parametrically driving a three-wave mixing circuit element that is weakly hybridized with an ensemble of resonators, we engineer a spectral response that simulates that of a physical delay line, while providing fast control over the delay line’s properties. We demonstrate this novel degree of control by choosing which photon echo to emit, translating pulses in time, and even swapping two pulses, all with pulse energies on the order of a single photon. We also measure the noise added from our parametric interactions and find it is much less than one photon.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Colloidal Atomic Layer Deposition with Stationary Reactant Phases Enables Precise Synthesis of “Digital” II–VI Nano-heterostructures with Exquisite Control of Confinement and Strain

In contrast to molecular systems, which are defined with atomic precision, nanomaterials generally show some heterogeneity in size, shape, and composition. The sample inhomogeneity translates into a distribution of energy levels, band gaps, work functions, and other characteristics, which detrimentally affect practically every property of functional nanomaterials. Here, we introduce a novel synthetic strategy, colloidal atomic layer deposition (c-ALD) with stationary reactant phases, which largely circumvents the limitations of traditional colloidal syntheses of nano-heterostructures with atomic precision. This method allows for significant reduction of inhomogeneity in nanomaterials in complex nanostructures without compromising their structural perfection and enables the synthesis of epitaxial nano-heterostructures of unprecedented complexity. The improved synthetic control ultimately enables bandgap and strain engineering in colloidal nanomaterials with close to atomic accuracy. To demonstrate the power of the new c-ALD method, we synthesize a library of complex II–VI semiconductor nanoplatelet heterostructures. By combining spectroscopic and computational studies, we elucidate the subtle interplay between quantum confinement and strain effects on the optical properties of semiconductor nanostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Structural design and optimization of near-ultraviolet light-emitting diodes with wide wells

The characteristics of the near-ultraviolet (NUV) light-emitting diodes (LEDs) with wide (14-nm-thick) and narrow (2-nm-thick) wells under the situations of different numbers of wells and degree of polarization are systematically investigated. The simulation results show that the Auger recombination can be efficiently suppressed with the increase of number of wells in NUV LEDs. For the LEDs with wide wells, the quantum-confined Stark effect and Shockley–Read–Hall recombination play an important role when the number of wells increases, especially when the LED is under low current injection or high degree of polarization. In order to take the advantage of using wide wells, it is proposed that the quaternary Al{sub 0.1}In{sub 0.05}Ga{sub 0.85}N barriers be used in wide-well NUV LEDs along with the use of Al{sub 0.3}Ga{sub 0.7}N/Al{sub 0.1}Ga{sub 0.9}N superlattice electron-blocking layer to mitigate the polarization effect and electron overflow. With this band-engineering structural design, the optical performance of the wide-well NUV LEDs is much better than its thin-well counterpart even under the situation of high degree of polarization.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

III-nitride quantum dots for ultra-efficient solid-state lighting

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.

42 ENGINEERING↗

Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe

Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7% for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 μm, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon.

42 ENGINEERING↗

Finding the order in complexity: The electronic structure of 14-1-11 zintl compounds

Yb 14 MnSb 11 and Yb 14 MgSb 11 have rapidly risen to prominence as high-performing p-type thermoelectric materials. However, the fairly complex crystal structure of A 14 MX 11 Zintl compounds renders the interpretation of the electronic band structure obscure, making it difficult to chemically guide band engineering and optimization efforts. In this work, we delineate the valence-balanced Zintl chemistry of A 14 MX 11 compounds using the molecular orbital theory. By analyzing the electronic band structures of Yb 14 MgSb 11 and Yb 14 AlSb 11 , we show that the conduction band minimum is composed of either an antibonding molecular orbital originating from the (Sb 3 ) 7– trimer or a mix of atomic orbitals of A, M, and X. The singly degenerate valence band is comprised of non-bonding Sb pz orbitals primarily from the Sb atoms in the (MSb 4 ) m– tetrahedra and of isolated Sb atoms distributed throughout the unit cell. Such a chemical understanding of the electronic structure enables strategies to engineer electronic properties (e.g., the bandgap) of A 14 MX 11 compounds.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Boosting the External Quantum Efficiency of AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes by Electrode Geometry Variation

Fast aluminum-gallium-nitride–based metal–semiconductor–metal ultraviolet photodiodes were successfully designed, fabricated, and characterized using conventional photolithography techniques. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the device performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Furthermore, based on the independently measured Hall mobility and electric field, we evaluated the carrier transit time of the devices as 1.31 ps with bias-voltage–independent external quantum efficiency of 1198% in photoconductive mode at 19.5 V and 70% at 60 V for n -doped and intrinsic devices, respectively.

42 ENGINEERING↗

Refine your search to explore more results.