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At least 1,801 records · Page 100
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Capacitated p -hub approach for park-and-ride facility location problem under nested logit demand function: polyhedral approaches

By generalizing the unconstrained p-hub approach for the park-and-ride (P&R) facility location problem under the multinomial logit demand function, the capacitated p-hub approach for the problem under the nested logit demand function captures a broader range of real-world cases. To solve this problem optimally, we introduce a mixed-integer linear program and accelerate its solution by enhancing the branch-and-cut procedure. To address the problem at a large scale, we introduce two other polyhedral approaches: variable neighborhood search (VNS) and adaptive randomized rounding (ARR). Downtown areas in Seoul have a high modal share of public transportation and congested road traffic, yet P&R has not been widely implemented. Therefore, we apply the ARR procedure to solve a real-world problem using traffic and geographic data from the Seoul metropolitan area. ARR performs better than VNS and addresses real-world cases. The solutions obtained by ARR present a phased expansion plan that encourages policymakers to start installing a small number of P&Rs immediately.

Capacitated p-hub approach↗
DOE OSTI2018

P-n heterostructured TiO2/NiO double-shelled hollow spheres for the photocatalytic degradation of papermaking wastewater

Highlights: • P-n heterostructured TiO{sub 2}/NiO double-shelled hollow spheres were prepared. • A cubic-structured NiO layer is grown on surface of anatase TiO{sub 2} hollow sphere. • TiO{sub 2}/NiO show high photocatalytic activity for papermaking wastewater degradation. • The COD{sub Cr} removal rate of wastewater reaches 98.1% after 6 h of photodegradation. - Abstract: P-n heterostructured TiO{sub 2}/NiO double-shelled hollow spheres were prepared through sol–gel and hydrothermal processes. TiO{sub 2}/NiO nanomaterials were comprehensively characterized, and the results reveal that a cubic-structured NiO layer is successfully grown on the surface of the anatase TiO{sub 2} hollow sphere to achieve a p-n heterostructure. The thickness of TiO{sub 2} shell is ∼20 nm, and that of NiO shell is 10–25 nm. Compared with the pure TiO{sub 2} hollow spheres, the prepared p-n heterostructures display a considerably higher photocatalytic activity for papermaking wastewater degradation under UV light irradiation. The chemical oxygen demand removal rate of papermaking wastewater reaches 98.1% after 6 h of photodegradation with DSTN2 as the photocatalyst. The enhanced photocatalytic activity is due to the synergetic effects of p-n heterostructures and the large specific surface area of the catalyst; these effects may promote the separation of photogenerated electron–hole pairs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation

GaN-based solar cells with InGaN multiple quantum wells (MQWs) are promising devices for application in space environment, concentrator solar systems, wireless power transmission and multi-junction solar cells. It is therefore important to understand their degradation kinetics when submitted to high-temperature and high-intensity stress. We submitted three samples of GaN-InGaN MQW solar cells with p-AlGaN electron-blocking-layer with different thickness of the p-GaN layer to constant power stress at 310 W/cm 2 , 175 °C for several hundred hours. The main degradation modes are a reduction of open-circuit voltage, short-circuit current, external quantum efficiency, power conversion efficiency and electroluminescence. In particular, we observed that a thinner p-GaN layer results in a stronger degradation observed on the cell operating parameters. The analysis of the dark I-V characteristics showed an increase in low-forward bias current and the analysis of electroluminescence showed a decrease in the electroluminescene emitted by the (forward biased) cell, as a consequence of stress. This work highlights that the cause of degradation is possibly related to a diffusion mechanism, which results in an increase of defect density in the active region. Finally, the impurities involved in the diffusion processes possibly originate from the p-side of the devices, therefore a thicker p-GaN layer reduces the amount of defects reaching the active region.

14 SOLAR ENERGY↗
DOE OSTI2022

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

Here, we report correlated nanoscale mapping of the structure, composition, and properties of regrown GaN p-n junctions to identify how etching and non-planar regrowth processes limit diode performance via the introduction of unintentional dopants and defect states. p-GaN was selectively regrown in n-GaN trenches with SiO 2 masks of variable mask-to-trench-width ratio. Dilute Al layers were periodically introduced during regrowth as markers of the growth interface. Correlated nanoscale mapping of doping, conductivity, and dopant complexes was achieved with atom probe tomography (APT), scanning spreading resistance microscopy (SSRM), and cathodoluminescence (CL) spectroscopy, respectively. The Al marker layers, detected by APT, enabled reconstruction of the faceted growth interface and correlation of the dopant concentration with position and time. The p-GaN growth rate is proportional to the mask-to-trench width ratio while the dopant incorporation rate is invariant. At trench edges, magnesium incorporation is suppressed, and oxygen incorporation enhanced, due to preferential incorporation on the semi-polar growth surface, leading to compensation and less abrupt p-n junctions; the SiO 2 mask is a source of oxygen. Residual etch damage below the regrowth interface induces n-type and p-type conductivity, creating leakage pathways. The non-uniform Mg incorporation is driven by crystal anisotropy and is thus inherent to non-planar regrowth, but can be mitigated by engineering the regrowth interface and process parameters. The unprecedented integration of spatially resolved mapping of dopants, impurities, conductivity, and carrier type is a powerful approach to discriminating distinct factors that limit the performance of regrown diodes, enabling the rational optimization of process and device design.

36 MATERIALS SCIENCE↗
DOE OSTI2017

NMR studies of the helical antiferromagnetic compound EuCo 2 P 2

In EuCo 2 P 2 , 4 f electron spins of Eu 2+ ions order antiferromagnetically below a Neel temperature T N = 66.5K. The magnetic structure below T N was reported to be helical with the helix axis along the c -axis from the neutron diffraction study. We report the results of 153 Eu, 59 Co and 31 P nuclear magnetic resonance (NMR) measurements on EuCo 2 P 2 using a single crystal and a powdered sample. In the antiferromagnetic (AFM) state, we succeeded in observing 153 Eu, 59 Co and 31 P NMR spectra in zero magnetic field. The sharp 153 Eu zero field NMR (ZF NMR) lines indicate homogeneous Eu ordered moment. The 59 Co and 31 P ZF NMR spectra showed an asymmetric spectral shape, indicating a distribution of the internal magnetic induction at each nuclear position. The AFM propagation vector k characterizing the helical AFM state can be determined from the internal magnetic induction at Co site. In conclusion, we have determined the model-independent value of the AFM propagation vector k distributed from (0, 0, 0.86)2π/c to (0, 0, 0.73)2π/c, where c is the lattice parameter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Quenching of the quantum p -strength in light exotic nuclei

One-nucleon spectroscopic overlaps, their strength or spectroscopic factors (SFs), and nucleon removal cross sections for light nuclei in the mass range A≤12 were evaluated using the fully correlated Quantum Monte Carlo (QMC) wave functions (WFs). Harder (AV18+UX) and softer (NV2+3) bare interactions were used providing consistent results. The SFs were also taken from simple Shell Model (SM) calculations. This structure information was incorporated in the standard three-body Faddeev/Alt-Grassberger-Sandhas reaction formalism to evaluate the (p,pN) cross sections. The results further our understanding of the quenching of the quantum p-shell strength obtained from structure and reactions. We have found the ratios of the total QMC sums of SFs to the SM ones to be uniform and ∼ 3/4. The corresponding ratios of the sums Below Particle Threshold (BPT) of SFs, as well as of total cross sections, deviate strikingly from the uniform trend in some special cases. We find these ratios to be close to unit for 9 Li → 8 Li + n and 9 C → 8 B + p. In contrast, they are strongly reduced for 11 C → 10 C + n and 11 B → 10 Be + p mirror transitions, resulting from the quenching of the strength for low-lying 2 + final state transitions. The QMC theoretical cross section BPT for 11 C(p,pn) is about two times smaller than the experimental data.

(p,pN) reactions↗
DOE OSTI2017

P-wave velocity anisotropy related to sealed fractures reactivation tracing the structural diagenesis in carbonates

Fracture properties are important in carbonate reservoir characterization, as they are responsible for a large part of the fluid transfer properties at all scales. It is especially true in tight rocks where the matrix transfer properties only slightly contribute to the fluid flow. Open fractures are known to strongly affect seismic velocities, amplitudes and anisotropy. Here, we explore the impact of fracture evolution on the geophysical signature and directional V p anisotropy of fractured carbonates through diagenesis. For that purpose, we studied a meter-scale, parallelepiped quarry block of limestone using a detailed structural and diagenetic characterization, and numerous V p measurements. The block is affected by two en-échelon fracture clusters, both being formed in opening mode (mode 1) and cemented, but only one being reactivated in shear. We compared the diagenetic evolution of the fractures, which are almost all 100% filled with successive calcite cements, with the P-wave velocities measured across this meter-scale block of carbonate, which recorded the tectonic and diagenetic changes of a South Provence sedimentary basin. We found that a directional V p anisotropy magnitude as high as 8–16% correlates with the reactivated fractures’ cluster dip angle, which is explained by the complex filling sequence and softer material present inside the fractures that have been reactivated during the basin's tectonic inversion. We show that although a late karstification phase preferentially affected these reactivated fractures, it only amplified the pre-existing anisotropy due to tectonic shear. We conclude that V p anisotropy measurements may help to identify the fracture sealing/opening processes associated with polyphased tectonic history, the anisotropy being independent of the current stress-state. Finally, this case shows that velocity anisotropies induced by fractures resulted here from a cause that is different from how these features have often been interpreted: selective reactivation of sealed fractures clusters rather than direction of currently open ones.

58 GEOSCIENCES↗
DOE OSTI2015

p-SCN-Bn-HOPO: A Superior Bifunctional Chelator for 89 Zr ImmunoPET

Zirconium-89 has an ideal half-life for use in antibody-based PET imaging; however, when used with the chelator DFO, there is an accumulation of radioactivity in the bone, suggesting that the 89 Zr 4+ cation is being released in vivo. Therefore, a more robust chelator for 89 Zr could reduce the in vivo release and the dose to nontarget tissues. Evaluation of the ligand 3,4,3-(LI-1,2-HOPO) demonstrated efficient binding of 89 Zr 4+ and high stability; therefore, we developed a bifunctional derivative, p-SCN-Bn-HOPO, for conjugation to an antibody. A Zr-HOPO crystal structure was obtained showing that the Zr is fully coordinated by the octadentate HOPO ligand, as expected, forming a stable complex. p-SCN-Bn-HOPO was synthesized through a novel pathway. Both p-SCN-Bn-HOPO and p-SCN-Bn-DFO were conjugated to trastuzumab and radiolabeled with 89 Zr. Both complexes labeled efficiently and achieved specific activities of approximately 2 mCi/mg. PET imaging studies in nude mice with BT474 tumors (n = 4) showed good tumor uptake for both compounds, but with a marked decrease in bone uptake for the 89 Zr-HOPO-trastuzumab images. Biodistribution data confirmed the lower bone activity, measuring 17.0%ID/g in the bone at 336 h for 89 Zr-DFO-trastuzumab while 89 Zr-HOPO-trastuzumab only had 2.4%ID/g. We successfully synthesized p-SCN-Bn-HOPO, a bifunctional derivative of 3,4,3-(LI-1,2-HOPO) as a potential chelator for 89 Zr. In vivo studies demonstrate the successful use of 89 Zr-HOPO-trastuzumab to image BT474 breast cancer with low background, good tumor to organ contrast, and, importantly, very low bone uptake. The reduced bone uptake seen with 89 Zr-HOPO-trastuzumab suggests superior stability of the 89 Zr-HOPO complex.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2017

Porous Structured Ni–Fe–P Nanocubes Derived from a Prussian Blue Analogue as an Electrocatalyst for Efficient Overall Water Splitting

Exploring nonprecious metal electrocatalysts to replace the noble metal-based catalysts for full water electrocatalysis is still an ongoing challenge. In this work, porous structured ternary nickel–iron–phosphide (Ni–Fe–P) nanocubes were synthesized through one-step phosphidation of a Ni–Fe-based Prussian blue analogue. The Ni–Fe–P nanocubes exhibit a rough and loose porous structure on their surface under suitable phosphating temperature, which is favorable for the mass transfer and oxygen diffusion during the electrocatalysis process. As a result, Ni–Fe–P obtained at 350 °C with poorer crystallinity offers more unsaturated atoms as active sites to expedite the absorption of reactants. Additionally, the introduction of nickel improved the electronic structure and then reduced the charge-transfer resistance, which would result in a faster electron transport and an enhancement of the intrinsic electrocatalytic activities. Benefiting from the unique porous nanocubes and the chemical composition, the Ni–Fe–P nanocubes exhibit excellent hydrogen evolution reaction and oxygen evolution reaction activities in alkaline medium, with low overpotentials of 182 and 271 mV for delivering a current density of 10 mA cm–2, respectively. Moreover, the Ni–Fe–P nanocubes show outstanding stability for sustained water splitting in the two-electrode alkaline electrolyzer. Furthermore, this work not only provides a facile approach for designing bifunctional electrocatalysts but also further extends the application of metal–organic frameworks in overall water splitting.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor

The p-type transistor is an indispensable component of semiconductor technology, enabling a complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to the limited semiconductors with reliable hole transport and their high activation energies. Here, in this study, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultrawide-bandgap semiconductor and a high-κ dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-κ (30.5) SrTiO 3 perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (∼200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm 2 /(V·s) to 572 cm 2 /(V·s)), and high on–off ratio (∼10 9 ). Furthermore, tuning the annealing temperature allows operation in either enhancement or depletion mode. The robust p-type transistor with high efficiency holds great potential for future power electronics, ultraviolet (UV) optoelectronics, and harsh-environment electronic applications.

high-κ membrane↗
DOE OSTI2018

Chemical Pressure-Driven Enhancement of the Hydrogen Evolving Activity of Ni 2 P from Nonmetal Surface Doping Interpreted via Machine Learning

The activity of Ni 2 P catalysts for the hydrogen evolution reaction (HER) is currently limited by strong H adsorption at the Ni 3 -hollow site. We investigate the effect of surface nonmetal doping on the HER activity of the Ni 3 P 2 termination of Ni 2 P(0001), which is stable at modest electrochemical conditions. Using density functional theory (DFT) calculations, we find that both 2p nonmetals and heavier chalcogens provide nearly thermoneutral H adsorption at moderate surface doping concentrations. We also find, however, that only chalcogen substitution for surface P is exergonic. For intermediate surface concentrations of S, the free energy of H adsorption at the Ni 3 -hollow site is -0.11 eV, which is significantly more thermoneutral than the undoped surface (-0.45 eV). We use the regularized random forest machine learning algorithm to discover the relative importance of structure and charge descriptors, extracted from the DFT calculations, in determining the HER activity of Ni 2 P(0001) under different doping concentrations. Here, we discover that the Ni–Ni bond length is the most important descriptor of HER activity, which suggests that the nonmetal dopants induce a chemical pressure-like effect on the Ni 3 -hollow site, changing its reactivity through compression and expansion.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Influence of n{sup +} and p{sup +} doping on the lattice sites of implanted Fe in Si

We report on the lattice location of implanted {sup 59}Fe in n{sup +}- and p{sup +}-type Si by means of emission channeling. We found clear evidence that the preferred lattice location of Fe changes with the doping of the material. While in n{sup +}-type Si Fe prefers displaced bond-centered (BC) sites for annealing temperatures up to 600 °C, changing to ideal substitutional sites above 700 °C, in p{sup +}-type Si, Fe prefers to be in displaced tetrahedral interstitial positions after all annealing steps. The dominant lattice sites of Fe in n{sup +}-type Si therefore seem to be well characterized for all annealing temperatures by the incorporation of Fe into vacancy-related complexes, either into single vacancies which leads to Fe on ideal substitutional sites, or multiple vacancies, which leads to its incorporation near BC sites. In contrast, in p{sup +}-type Si, the major fraction of Fe is clearly interstitial (near-T or ideal T) for all annealing temperatures. The formation and possible lattice sites of Fe in FeB pairs in p{sup +}-Si are discussed. We also address the relevance of our findings for the understanding of the gettering effects caused by radiation damage or P-diffusion, the latter involving n{sup +}-doped regions.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices

Ce-doped p-type ZnO nanofibers were synthesized by electrospinning and followed calcinations. The surface morphology, elementary composition, and crystal structure of the nanofibers were investigated. The field effect curve confirms that the resultant Ce-doped ZnO nanofibers are p-type semiconductor. A p-n heterojunction device consisting of Ce-doped p-type ZnO nanofibers and n-type indium tin oxide (ITO) thin film was fabricated on a piece of quartz substrate. The current-voltage (I-V) characteristic of the p-n heterojunction device shows typical rectifying diode behavior. The turn-on voltage appears at about 7 V under the forward bias and the reverse current is impassable.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Precipitation control and activation enhancement in boron-doped p{sup +}-BaSi{sub 2} films grown by molecular beam epitaxy

Precipitation free boron (B)-doped as-grown p{sup +}-BaSi{sub 2} layer is essential for the BaSi{sub 2} p-n junction solar cells. In this article, B-doped p-BaSi{sub 2} layers were grown by molecular beam epitaxy on Si(111) substrates, and the influence of substrate growth temperature (T{sub S}) and B temperature (T{sub B}) in the Knudsen cell crucible were investigated on the formation of B precipitates and the activation efficiency. The hole concentration, p, reached 1.0 × 10{sup 19 }cm{sup −3} at room temperature for T{sub S} = 600 and T{sub B} = 1550 °C. However, the activation rate of B was only 0.1%. Furthermore, the B precipitates were observed by transmission electron microscopy (TEM). When the T{sub S} was raised to 650 °C and the T{sub B} was decreased to 1350 °C, the p reached 6.8 × 10{sup 19 }cm{sup −3}, and the activation rate increased to more than 20%. No precipitation of B was also confirmed by TEM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction

Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diode is potential for applications of portable UV detectors without driving power.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Giant magnetoresistance modulated by magnetic field in graphene p-n junction

We investigate the tunneling transport across a graphene p-n junction under the influence of a perpendicular magnetic field (B field). We observe a sideway deflection of the transmission profile, which can be quantitatively explained by invoking the classical Lorentz force. By considering the trajectory of the Dirac fermions along their cyclotron orbits, we analytically derive the incident angles for transmission across the graphene junction under a B field, as well as the critical magnetic field for full suppression of tunneling across the junction. These analytical predictions are consistent with the numerical results obtained via the non-equilibrium Green's function method. A stronger B-field conductance modulation is obtained for a p-n as opposed to an n-n or p-p type graphene junction. The magnetic field also induces a forbidden region of almost zero transmission for electron energy close to the Dirac point, which can be utilized to achieve a giant magnetoresistance effect. Based on our analysis, we devise an optimal magneto-electrical transport modulation, which can potentially realize a giant magnetoresistance effect in graphene p-n junction systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al{sub 2}O{sub 3} gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density (D{sub it}) values at the Al{sub 2}O{sub 3}/GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that on (100) surfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with the 20-nm-thick GaSb layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

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