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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,801 records · Page 100
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Large-area SiC membrane produced by plasma enhanced chemical vapor deposition at relatively high temperature

Advances in the growth of silicon carbide (SiC) thin films with outstanding thermal and mechanical properties have received considerable attention. However, the fabrication of large-area free-standing SiC membrane still remains a challenge. Here, the authors report a plasma enhanced chemical vapor deposition process at a relatively high temperature to improve the free-standing SiC membrane area. A systematic study on the microstructural, mechanical, and optical properties of hydrogenated polycrystalline silicon carbide (poly-SiC{sub x}:H) thin films deposited at 600 °C with different annealing temperatures has been performed. In the as-deposited state, SiC{sub x}:H thin films show a polycrystalline structure. The crystallinity degree can be further improved with the increase of the postdeposition annealing temperature. The resulting process produced free-standing 2-μm-thick SiC membranes up to 70 mm in diameter with root mean square roughness of 3.384 nm and optical transparency of about 70% at 632.8 nm wavelength. The large-area SiC membranes made out of poly-SiC{sub x}:H thin films deposited at a relatively high temperature can be beneficial for a wide variety of applications, such as x-ray diffractive optical elements, optical and mechanical filtering, lithography mask, lightweight space telescopes, etc.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Direct fabrication of high aspect-ratio metal oxide nanopatterns via sequential infiltration synthesis in lithographically defined SU-8 templates

Nanopatterning high aspect-ratio metal oxide structures remains challenging for conventional nanofabrication methods based on reactive ion etching due to marginal etch selectivity between target oxides and typical mask materials. Here, the authors report the application of sequential infiltration synthesis (SIS) on lithographically defined SU-8 polymer templates for patterning arbitrarily designed, high aspect-ratio metal oxide nanostructures with sub-50 nm linewidths, smooth vertical profiles, and three-dimensional (3D) morphologies difficult to achieve by the conventional fabrication methods. As examples, various AlOx nanostructures with ∼40 nm linewidths and up to 16 aspect ratios were demonstrated, along with TiOx in-plane nanowire arrays of controlled positional registrations. Detailed scanning and transmission electron microscopy studies revealed nanocrystalline and amorphous internal structures of respective AlOx and TiOx, as well as the swelling and contraction behaviors of polymer templates during the SIS process, which allowed the facile fabrication of high aspect-ratio, sub-50 nm-featured oxide nanopatterns with 3D morphologies. These results confirm the potential of vapor-phase material infiltration in directly nanopatterning complexly structured metal oxides.

Nam, Chang-Yong↗
DOE OSTI2016

Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness

The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface roughness, crystal damage, and etch angle. Etch depths from 2 to 3.4 μm are shown in this paper. The authors investigate the formation of etch pits and its contributing factors. In addition, a nickel hard mask process is presented, with an investigation into the causes of micromasking and a pre-etch to prevent it. The authors show the results of optimized etch conditions resulting in a 2 μm deep, 0.831 nm rms roughness etch, with a 7.6° angle from vertical and low surface damage as measured by photoluminescence.

Tahhan, Maher↗
DOE OSTI2016

Silver decorated polymer supported semiconductor thin films by UV aided metalized laser printing

A facile ultraviolet assisted metalized laser printing technique is demonstrated through the ability to control selective photodeposition of silver on flexible substrates after atomic layer deposition pretreatment with zinc oxide and titania. The photodeposition of noble metals such as silver onto high surface area, polymer supported semiconductor metal oxides exhibits a new route for nanoparticle surface modification of photoactive enhanced substrates. Photodeposited silver is subsequently characterized using low voltage secondary electron microscopy, x-ray diffraction, and time of flight secondary ion mass spectroscopy. At the nanoscale, the formation of specific morphologies, flake and particle, is highlighted after silver is photodeposited on zinc oxide and titania coated substrates, respectively. The results indicate that the morphology and composition of the silver after photodeposition has a strong dependency on the morphology, crystallinity, and impurity content of the underlying semiconductor oxide. At the macroscale, this work demonstrates how the nanoscale features rapidly coalesce into a printed pattern through the use of masks or an X-Y gantry stage with virtually unlimited design control.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

The general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structure on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion mass spectrometry indicates penetration of chlorine in the structures. Transmission electron microscopy is used to characterize the quantum well structure before and after plasma bombardment. By examining carefully the luminescence spectral properties, the authors could demonstrate the influence of the etching plasmas on the built-in electric field (in the case of doped samples), and relate it to some ionic species penetrating the structures. Etching plasmas involving both chlorine and nitrogen have also been studied. The etching rate for these chemistries is much slower than for some of the silicon tetrachloride based chemistries. Their effects on the samples are also very different, showing much reduced effect on the built-in electric field (for the doped samples), but significant blue-shifts of the luminescence peaks that the authors attributed to the penetration of nitrogen in the structures. Nitrogen, in interstitial locations, induces mechanical compressive stress that accounts for the blue-shifts. Finally, from the comparison between secondary ion mass spectrometry and luminescence spectra, the authors suggest some elements for a general mechanism involved in the etching by chloride-chemistries, in which a competition takes place between the species at the surface, active for the etching mechanism, and the species that penetrate the structure, lost for the etching process, but relevant in terms of impact on the electro-optic and structural features of the exposed materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Innovations in the vapor deposition of metal coatings for target payloads in laser-based physics experiments under extreme conditions

The synthesis of metal foils with unique surface features such as waves and steps is of interest for use as payloads in targets for laser-driven physics experiments under dynamic loading conditions. Changes to the surface features are used to quantify the effects of the material strength during the deformation at high-strain rate high pressure. Additionally, a traditional path to produce these target features is by precision machining processes using diamond tools. Limitations are encountered since many of the materials of interest and the size of the surface features are not often compatible with conventional machining-process methods. An alternative method to produce targets with unique surface features is through vapor synthesis. Two general approaches are taken—one is by replicating the features from the surface of a substrate mandrel, whereas the second is by using hard masks with timed exposure to the deposition vapor. In these approaches, postdeposition removal of a release layer yields a free-standing target with the desired surface features. Here, specific cases are presented for the physical vapor deposition of copper, aluminum, iron, vanadium, and tantalum to form targets with multiple layers, steps, and sinusoidal surface waves.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Balancing ion parameters and fluorocarbon chemical reactants for SiO 2 pattern transfer control using fluorocarbon-based atomic layer etching

In manufacturing, etch profiles play a significant role in device patterning. Here, the authors present a study of the evolution of etch profiles of nanopatterned silicon oxide using a chromium hard mask and a CHF 3 /Ar atomic layer etching in a conventional inductively coupled plasma tool. The authors show the effect of substrate electrode temperature, chamber pressure, and electrode forward power on the etch profile evolution of nanopatterned silicon oxide. Chamber pressure has an especially significant role, with lower pressure leading to lower etch rates and higher pattern fidelity. The authors also find that at higher electrode forward power, the physical component of etching increases and more anisotropic etching is achieved. By carefully tuning the process parameters, the authors are able to find the best conditions to achieve aspect-ratio independent etching and high fidelity patterning, with an average sidewall angle of 87° ± 1.5° and undercut values as low as 3.7 ± 0.5% for five trench sizes ranging from 150 to 30 nm. Finally, they provide some guidelines to understand the impact of plasma parameters on plasma ion distribution and thus on the atomic layer etching process.

42 ENGINEERING↗
DOE OSTI2023

Shape tuning of large area silicon nanotip arrays through reactive ion etching

Nanostructures formed in silicon form an important class of structures that span a broad spectrum of application areas. Of these, columnar structures of silicon featuring tiplike apexes have their own niche applications. Here, the ability to afford shape tunability for these structures further enhances their application potential. In this paper, we present our findings on the large area fabrication of silicon nanotips defined through microsphere lithography and shape tuned through a combination of different reactive ion etching (RIE) techniques. The self-sharpening mechanism of the tips when using nonplanar etch masks (microspheres) under anisotropic etching conditions is elucidated. We further show that depending on the manner of etching (continuous versus discrete multistep etch), identical anisotropic etching recipes produce vastly different tip morphologies. Hourglass-shaped silicon tips were obtained when silicon was subjected to anisotropic followed by isotropic etching conditions. Sharp silicon tips with tip apex radii on the order of 2 nm have been successfully realized when the RIE shape tuned tips were subjected to a series of oxidative sharpening steps.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Fabrication of model ultrafiltration membranes with uniform, high aspect ratio pores

Here, in this manuscript, we report the facile fabrication of large-area model membranes with highly uniform and high aspect ratio pores with diameters <20 nm. These membranes are useful for fundamental investigations of separation by size exclusion in the ultrafiltration regime, where species to be separated from solution have dimensions of 1–100 nm. Such investigations require membranes with narrow pores and high aspect ratios such that the Hagen–Poiseuille equation is followed, enabling well-known models such as the hindered transport model to be evaluated and other affecting factors to be ignored. We demonstrate that the sub-20 nm pores in the membrane are of sufficiently high aspect ratio such that water flux through the membrane is consistent with the Hagen–Poiseuille equation. The fabrication relies on self-assembling block copolymers to form uniform, densely packed patterns with sub-20 nm resolution, sequential infiltration synthesis to convert the block copolymer in situ into a mask with adequate contrast to etch pores with an aspect ratio >5, and low-resolution photolithography to transfer the pattern over a large area into a silicon nitride membrane. Model membranes with narrow pore-size distribution fabricated in this way provide the means to investigate parameters that impact size-selective ultrafiltration separations such as the relationships between solute or particle size and pore size, their distributions, and rejection profiles, and, therefore, test the validity or limits of separation models.

Chen, Wen↗
DOE OSTI2019

Asymmetries in adaptive optics point spread functions

An explanation for the origin of asymmetry along the preferential axis of the point spread function (PSF) of an AO system is developed. When phase errors from high-altitude turbulence scintillate due to Fresnel propagation, wavefront amplitude errors may be spatially offset from residual phase errors. These correlated errors appear as asymmetry in the image plane under the Fraunhofer condition. In an analytic model with an open-loop AO system, the strength of the asymmetry is calculated for a single mode of phase aberration, which generalizes to two dimensions under a Fourier decomposition of the complex illumination. Other parameters included are the spatial offset of the AO correction, which is the wind velocity in the frozen flow regime multiplied by the effective AO time delay and propagation distance or altitude of the turbulent layer. In this model, the asymmetry is strongest when the wind is slow and nearest to the coronagraphic mask when the turbulent layer is far away, such as when the telescope is pointing low toward the horizon. A great emphasis is made about the fact that the brighter asymmetric lobe of the PSF points in the opposite direction as the wind, which is consistent analytically with the clarification that the image plane electric field distribution is actually the inverse Fourier transform of the aperture plane. Validation of this understanding is made with observations taken from the Gemini Planet Imager, as well as being reproducible in end-to-end AO simulations.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2017

Image-based pupil plane characterization via a space-domain basis

© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE). Aberration characterization plays a critical role in the development of any optical system. State-of-the-art lithography systems have the tightest aberration tolerances. We present an approach to image-based pupil plane amplitude and phase characterization using models built with a space-domain basis, in which aberration effects are separable. A polynomial model is constructed between the projections of the image intensity for chosen binary mask targets onto this basis and pupil amplitude or phase variation. This method separates model building and pupil characterization into two distinct steps, thus enabling rapid pupil characterization following data collection. The basis is related to both the transmission cross-coefficient function and the principal components of the image intensity. The pupil plane variation of a zone-plate lens from the Semiconductor High-NA Actinic Reticle Review Project (SHARP) at Lawrence Berkeley National Laboratory is examined using this method. Results are compared to pupil plane characterization using a previously proposed methodology where inverse solutions are obtained through an iterative process involving least-squares regression.

Levinson, Zac↗
DOE OSTI2021

Picometer sensitivity metrology for EUV absorber phase

With growing interest in EUV attenuated phase-shift masks due to their superior image quality for applications such as dense contact and pillar arrays, it is becoming critical to model, measure, and monitor the intensity and relative phase of multilayer and absorber reflections. We present a solution based on physical modeling of reflectometry data, which can achieve single picometer phase precision and sensitivity to changes in average film thickness below one atomic monolayer. We measure absorber and multilayer reflectivity to determine thin-film parameters with a multidimensional optimization and then acquire a new measurement of either multilayer or absorber to determine perturbations in surface contamination thickness. While it is difficult to assess the accuracy of the first step, the simplicity of the second step allows us to characterize our sensitivity to changes in contamination thickness. Thus, we apply this analysis using an initial set of measurements and repeated measurements after a period of storage. For the multilayer, the total contamination growth was 1068 pm, which occurred almost exclusively during storage (1085 pm) and decreased very slightly during repeated measurements (-17 pm). For the absorber, the behavior was quite different, with a total growth of 126 pm, which occurred much less during storage (28 pm) and primarily during repeated measurements (98 pm). Ultimately, the change in relative phase (absorber minus multilayer) was -0.86 deg for the multilayer and -1.12 deg for the absorber. We estimate the precision of the surface contamination measurement to be 3σ < 6 pm for measuring thickness and 3σ < 0.2 deg for measuring phase.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effect of pattern transfer process on roughness of block copolymer patterns from directed self-assembly

Block copolymer-directed self-assembly (DSA) remains promising for improving pattern quality and reducing the stochastic variations that challenge high numerical aperture extreme ultraviolet lithography. Equally critical is refining pattern transfer methods for accurately transferring the rectified DSA features to the underlying substrate. We compare two atomic layer deposition (ALD)-based techniques: sequential infiltration synthesis (SIS) and dry liftoff, applied to polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) DSA patterns. Both methods utilize aluminum oxide hard masks, with one synthesized through infiltration into the PMMA domains and the other through conformal ALD coating. High-resolution scanning electron micrographs were analyzed to measure line edge, width, and placement roughness for both the line (PMMA) and space (PS) features. Although both methods yielded similar overall 3σ rms roughness, they differed significantly in the frequency-dependent power spectral density (PSD) profiles. SIS reduced line placement roughness at length scales associated with the polymer pitch, but increased space width roughness at low frequencies, whereas dry liftoff mimicked the frequency content of the original guiding pattern. This study underscores the importance of PSD evaluation in selecting optimal pattern transfer strategies for specific applications.

Block copolymers↗
DOE OSTI2022

Segmenting water and shadow regions within WorldView imagery using local binary patterns

Many shadow detection algorithms pertaining to remotely sensed imagery exist. Several of these algorithms exploit the spectral characteristics of shadows within imagery to identify shaded regions. However, these algorithms can have problems when water is also present within the imagery because water shares similar spectral characteristics with shadows. Many of these algorithms are applied to small image subsets instead of the image as a whole and frequently are applied to urban environments that require additional use of the normalized difference water index or other features to affect the removal of water from the shadow mask. This diversity of the image scene content coupled with the complexity and wide variety of environmental conditions that satellite imagery can acquire makes reliably separating shadow and water within larger images a complex problem. Thresholding various spectral indices to produce segmentation maps can be challenging when large, complex, and often imbalanced scenes are captured, which may require manual adjustment of algorithmic parameters for different image areas. Here, we present a methodology that makes use of the near-infrared channel using a watershed segmentation algorithm, local binary pattern measurements, and a support vector machine to classify shadow and water within a full WorldView scene. Results are promising with initial accuracies above 97% for both shadow and water.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Laser space debris cleaning: elimination of detrimental self-focusing effects

A ground-based laser system for space debris cleaning requires pulse power well above the critical power for self-focusing in the atmosphere. Self-focusing results in beam quality degradation and is detrimental for the system operation. We demonstrate that, for the relevant laser parameters, when the thickness of the atmosphere is much less than the focusing length (that is, of the orbit scale), the beam transit through the atmosphere produces the phase distortion only. The model thus developed is in very good agreement with numerical modeling. This implies that, by using phase mask or adaptive optics, it may be possible to eliminate almost completely the impact of self-focusing effects in the atmosphere on the laser beam propagation.

47 OTHER INSTRUMENTATION↗
DOE OSTI2015

Radiation Anomaly Detection Algorithms for Field-Acquired Gamma Energy Spectra

The Remote Sensing Laboratory (RSL) is developing a tactical, networked radiation detection system that will be agile, reconfigurable, and capable of rapid threat assessment with a high degree of fidelity and certainty. Our design is driven by the needs of users such as law enforcement personnel who must make decisions by evaluating threat signatures in urban settings. The most efficient tool available to identify the nature of the threat object is real-time gamma spectroscopic analysis, as it is fast and has a very low probability of producing false positive alarm conditions. Urban radiological searches are inherently challenged by the rapid and large spatial variation of background gamma radiation, the presence of benign radioactive materials in terms of the normally occurring radioactive materials (NORM), and shielded and/or masked threat sources. Multiple spectral anomaly detection algorithms have been developed by national laboratories and commercial vendors. For example, the Gamma Detector Response and Analysis Software (GADRAS) a one-dimensional deterministic radiation transport software capable of calculating gamma ray spectra using physics-based detector response functions, was developed at Sandia National Laboratories. The nuisance-rejection spectral comparison ratio anomaly detection algorithm (or N-SCRAD), developed at Pacific Northwest National Laboratory, uses spectral comparison ratios to detect deviation from benign medical and NORM radiation source and can work in spite of strong presence of NORM and or medical sources. RSL has developed its own wavelet-based gamma energy spectral anomaly detection algorithm called WAVRAD. Test results and relative merits of these different algorithms will be discussed and demonstrated.

networked sensor, gamma spectroscopy, false alarm ↗
DOE OSTI2019

Achieving diffraction-limited performance on the Berkeley MET5

© 2019 SPIE. The Berkeley MET5, funded by EUREKA, is a 0.5-NA EUV projection lithography tool located at the Advanced Light Source at Berkeley National Lab. Wavefront measurements of the MET5 optic have been performed using a custom in-situ lateral shearing interferometer suitable for high-NA interferometry. In this paper, we report on the most recent characterization of the MET5 optic demonstrating an RMS wavefront 0.31 nm, and discuss the specialized mask patterns, gratings, and illumination geometries that were employed to accommodate the many challenges associated with high-NA EUV interferometry.

Miyakawa, R↗
DOE OSTI2020

Infiltration synthesis of hybrid nanocomposite resists for advanced nanolithography

In this work, we demonstrate a simple ex-situ inorganic infiltration route for transforming standard organic resists into highperformance positive tone hybrid resist platform. A model thin film PMMA-AlOx hybrid resist system has been synthesized by hybridization of PMMA with AlOx and investigated for electron beam lithography. The approach possesses full controllability of the resist performance in terms of critical does, patterning contrast reaching up to 30 and etch resistance for plasma-based pattern transfer processes. The high selectivity Si etching capability demonstrated using a lowtemperature cryo-Si etch process, based on the controlled infiltration outperforms commercial resists and typical hard mask material thermal SiO 2 , with estimated achievable selectivity in excess of ~300. Si nanostructures down to ~30 nm with aspect ratio up to ~17 are also transferred into the Si substrate. Easy implementation and adaptability for different inorganic infiltrations, this platform is well capable of potentially delivering the resist performance and throughput necessary for EUV lithography.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

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