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DOE OSTI2019

Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures

Commercial InGaN/GaN light emitting diodes continue to suffer from efficiency droop at high current densities, and urgently require enhanced structural-optical toolsets for active region characterization. We measure delayed (tens of seconds) cathodoluminescence which is influenced by carrier transport and deep level defects. Further, we observe that drops in efficiency are not correlated with quantum well (QW) width fluctuations. To explain the rise dynamics, we propose a model involving filling of deep level defects and simultaneous reduction of built-in field within the multi-QW active region. These measurements yield insights into carrier transport, efficiency-reducing defects, and QW band structure.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Structural defects in GaN revealed by Transmission Electron Microscopy

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

36 MATERIALS SCIENCE↗

NASA NTRS1969

Study of lattice defect vibration

Report on the vibrations of defects in crystals relates how defects, well localized in a crystal but interacting strongly with the other atoms, change the properties of a perfect crystal. The methods used to solve defect problems relate the properties of an imperfect lattice to the properties of a perfect lattice.

Elliott, R. J.↗

NASA NTRS1972

Study of critical defects in ablative heat shield systems for the space shuttle

Results are presented from an investigation to determine the effects of fabrication-induced defects on the performance of an ablative heat shield material in a simulated space shuttle reentry environment. Nondestructive methods for detecting the defects were investigated. The material considered is a fiber-filled, honeycomb-reinforced, low-density elastomer. Results were obtained for density variations, voids, fiber bundles, crushed honeycomb, undercut honeycomb, unbonded areas, face sheet delaminations, and cure variations. The data indicate that, within reasonable tolerances, the fabrication defects investigated are not critical in terms of reentry performance of the heat shield.

Thompson, R. L.↗

NASA NTRS1975

Process-induced defects in terrestrial solar cells

Experimental and theoretical work on low resistivity, high efficiency solar cells indicates the dominant role that defects take in determining performance. High doping mechanisms produce gap shrinkage by band tailing, impurity band widening and impurity misfit; altered interband transmission rates result from Auger impact, SRH processes, or from electronic tunneling via defects. Characterizations of cell materials for their defects and their relations to the chosen fabrication processes are proposed.

Lindholm, F. A.↗

NASA NTRS1976

Effective defect density for MOS breakdown - Dependence on oxide thickness

A new procedure for measuring effective defect density takes time-dependent primary dielectric breakdown in MOS devices into account. A time-varying breakdown probability is obtained by applying a constant field stress to a statistically sufficient number of MOS capacitors. Effective defects are assumed distributed randomly in two dimensions, hence indistinguishable. The effective defect density is found to vary with oxide thickness; tentative explanations are ventured to account for this (interfacial tensile stress, ion patching enhanced by local trapping, breakdown in the form of filamentary discharges with release of stored electrostatic energy).

Li, S. P.↗

NASA NTRS1978

Defect distribution near the surface of electron-irradiated silicon

The surface-defect distributions of electron-irradiated n-type silicon have been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution, but not that of oxygen, and other capture centers' distributions. The vacancy diffusion length at 300 K was estimated to be about 3-6 microns.

Wang, K. L.↗

NASA NTRS1979

Quantitative Analysis of Defects in Silicon

The evaluation and prediction of the conversion efficiency for a variety of silicon samples with differences in structural defects, such as grain boundaries, twin boundaries, precipitate particles, dislocations, etc. are discussed. Quantitative characterization of these structural defects, which were revealed by etching the surface of silicon samples, is performed by using an image analyzer. Due to different crystal growth and fabrication techniques the various types of silicon contain a variety of trace impurity elements and structural defects. The two most important criteria in evaluating the various silicon types for solar cell applications are cost and conversion efficiency.

Natesh, R.↗

NASA NTRS1978

Detection of internal defects in a liquid natural gas tank by use of infrared thermography

The use of an infrared scanning technique to detect defects in the secondary barrier of a liquid natural gas tank is described. The method works by detecting leak-caused temperature differences as low as 0.2 K, but can provide only an approximate idea of the extent of the defect. The nondestructive method was tested in a study of a LNG tank already at its location in a ship; the secondary barrier was located inside the tank wall. Defective areas indicated by the infrared radiometric measurements were confirmed by other probe techniques and by physical examination.

Kantsios, A. G.↗

NASA NTRS1980

Detection of tanker defects with infrared thermography

Infrared scanning technique for finding defects in secondary barrier of liquid natural gas (LNG) tank has been successfully tested on ship under construction at Newport News Shipbuilding and Dry Dock Company. Technique determines defects with minimal expenditure of time and manpower. Tests could be repeated during life of tanker and make more complicated testing unnecessary. Tests also confirmed that tank did not have any major defects, and tank was certified.

Kantsios, A. G.↗

NASA NTRS1979

Influence of alignment and surface defects on the performance of X-ray telescopes

The effects of misalignment and surface deformations on the image quality of a grazing incidence telescope with six nested subsystems are investigated. The axial rms-spot size serves as a measure for the image quality. The surface deformations are simulated by ellipsoidal and sinusoidal deviations from the ideal surface. Misalignments are tilts, decenters, and despaces of the individual elements. The effects of each type of defect are analyzed in a single two-element system. The full nested system is then analyzed in the presence of all possible defects on all 12 elements, whereby the magnitude of the defects is randomized within a given upper limit.

Korsch, D.↗

NASA NTRS1982

Processed-induced defects in EFG ribbons

The defect structure of processed edge defined film-fed growth (EFG) silicon ribbons was studied using a variety of electron microscopic techniques. Comparison between the present results and previous studies on as-grown ribbons has shown that solar cell processing introduces additional defects into the ribbons. The creation of point defects during high temperature phosphorus diffusion induces dislocation climb, resulting in the formation of dislocation helices in the diffused layer.

Cunningham, B.↗

NASA NTRS1981

Defect design of insulation systems for photovoltaic modules

A defect-design approach to sizing electrical insulation systems for terrestrial photovoltaic modules is presented. It consists of gathering voltage-breakdown statistics on various thicknesses of candidate insulation films where, for a designated voltage, module failure probabilities for enumerated thickness and number-of-layer film combinations are calculated. Cost analysis then selects the most economical insulation system. A manufacturing yield problem is solved to exemplify the technique. Results for unaged Mylar suggest using fewer layers of thicker films. Defect design incorporates effects of flaws in optimal insulation system selection, and obviates choosing a tolerable failure rate, since the optimization process accomplishes that. Exposure to weathering and voltage stress reduces the voltage-withstanding capability of module insulation films. Defect design, applied to aged polyester films, promises to yield reliable, cost-optimal insulation systems.

Mon, G. R.↗

NASA NTRS1982

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗

NASA NTRS1983

Current collection from the space plasma through defects in high voltage solar array insulation

For spacecraft operation in the near Earth environment, solar cell arrays constitute the major source of reliable long term power. Optimization of mass and power efficiency results in a general requirement for high voltage solar arrays. The space plasma environment, though, can result in large currents being collected by exposed solar cells. The solution of a protective covering of transparent insulation is not a complete solution, inasmuch as defects in the insulation result in anomalously large currents being collected through the defects. Tests simulating the electron collection from small defects in an insulation have shown that there are two major collection modes. The first mode involves current enhancement by means of a surface phenomenon involving the surrounding insulator. In the second mode the current collection is enhanced by vaporization and ionization of the insulators materials, in addition to the surface enhancement of the first mode. A model for the electron collection is the surface enhanced collection mode was developed. The model relates the secondary electron emission yield to the electron collection. It correctly predicts the qualitative effects of hole size, sample temperature and roughening of sample surface. The theory was also shown to predict electron collection within a factor of two for the polymers teflon and polyimide.

Stillwell, R. P.↗

NASA NTRS1983

Effects of defects in composite structures

The effect of defects in composite structures is addressed. Defects in laminates such as wrinkles, foreign particles, scratches and breaks are discussed. Effects of plygap plywaviness and machining defects are also studied.

Sendeckyj, G. P.↗

NASA NTRS1981

Detection of strength limiting defects in cellular glasses by dielectric measurements

The foamed glasses that are being considered for structural support in solar thermal energy system silvered glass concentrator mirrors are assessed for strength-limiting defects by a nondestructive technique which measures the capacitance of well defined regions. The feasibility of locating large defects is demonstrated for the case of one type of cellular mass. Observed capacitance variations are believed to be due to small voids or other irregularities in the material. If the defects are equal to or greater than approximately 20 times the glass matrix pore size, they can be resolved with sufficient accuracy to delineate their spatial extent.

Gammell, P. M.↗

NASA NTRS1982

Recognizing defects in carbon-fiber reinforced plastics

The damage tolerance of structures made of carbon-fiber-reinforced plastic is tested under various loads. Test laminate (73/1/1, 24/9/1, 1465 A) specimens of thickness 1.5-3.2 mm with various defects were subjected to static and dynamic loads. Special attention was given to delamination, and ultrasonic C-scans were made on the specimens. It was shown that cracks from even small defects are detected with great accuracy. The same probes were also X rayed; defects that could not be detected under ordinary X rays were bored and studied under vacuum by a contrast technique. The nondestructive ultrasonic and X ray tests were controlled by partially destructive tests, and good agreement was observed.

Schuetze, R.↗

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