The production of BeV potential wells
Production of billion electron volt potential wells by cloud of electrons suspended in magnetic field
POTENTIAL FIELD↗
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Multi-band quantum well infrared photodetectors
The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 mu m.
IR quantum well thermal imaging multi-spectral↗
Large format long-wavelength GaAs/AlGaAs multi-quantum well infrared detector arrays for astronomy
A long-wavelength large format Quantum Well Infrared Photodetector (QWIP) focal plane array has been successfully used in a ground based astronomy experiment.
QWIP low background astronomy focal plane arrays l↗
Large Format Quantum Well Infrared Photodetector Focal Plane Arrays for Astronomical Instrumentations
Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors.
Infrared Focal Plane Arrays Quantum Wells↗
Highly Sensitive Quantum Well Infrared Photodetectors
A fundametally new method for light coupling in quantum well infrared photodetectors that provides a 10-fold improvement over an optimized grating coupler is presented.
Quantum well detectors↗
Optical Coupling Mechnisms in Quantum Well Infrared Photodetectors
Light coupling systems, such as gratings are required becuase Quantum Well Infrared Photodetectors do not respond to normal incident light due to the quantum mechanical selection rules associated with intersubband transitions. The resolution of the photolithography and acuracy of the etching beomce key issues in producing smaller rating feature sizes expecially in shorter wavelengths.
Quantum Wells Intersubband infrared detectors grat↗
(abstract) 9 (micro)m Cutoff 640x480 Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera
Long wavelength infrared (LWIR) detectors, 8 (micro)m to 12 (micro)m, are of great interest for a variety of ground-based and space-borne applications. These applications have placed stringent requirements on the performance of the infrared detectors and arrays including high detectivity, low dark current, uniformity, radiation hardness, and low power dissipation. I will discuss the development and progress of GaAs based long-wavelength quantum well infrared photodetectors (QWIPs) to meet those stringent requirements and the demonstration of a 9 (micro)m cutoff 640x480 QUIP focal plane array camera. The noise equivalent temperature difference of the focal plane array is 25 mK at 300 K background and the operating temperature is 70 K.
long wavelength infrared detectors LWIR detector a↗
(abstract) Applications of Long-wavelength 256x256 GaAs/Al&subx;Ga&sub1-x;As Quantum Well Infrared Photodetector Hand-held Camera
A 9 (micro)m 256x256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NE(gamma)) of 26 mK has been achieved. In this presentation, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array, its performance in quantum efficience, NA(gamma), minimum resolvable temperature (MRTD), uniformity, operability, and its applications.
GaAs infrared photodetector quantum well QUIP nois↗
Long Wavelength INGaAs/InGaAsP Quantum Well Lasers at [approximately] 2.0 micrometers
InGaAs/InGaAsP strained quantum well buried heterostructure and distributed feedback lasers emitting at wavelengths as long as 2.06 micrometers with low internal loss and threshold currents have been demonstrated for the first time. The room and high temperature characteristics and the threshold gain are discussed.
quantum well lasers indium gallium↗
Very Long Wavelength InGaAs/GaAs Quantum Well Infrared Photodetector
There has been much interest in very long-wavelength quantum well infrared photodetectors and associated intersubband absorption due to their mature technology and the possibility of producing high performance large area two-dimensional imaging arrays.
quantum well infrared photodetectors two-dimension↗
8-9 and 14-15 meu Two-Color 640x486 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera
An optimized long-wavelength two-color Quantum Well Infrared Phototdetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
Quantum Well Infrarted Photodetector QWIP↗
640x486 Long-wavelength Dualband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera
An optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
multi-quantum-wells intersubband transitions long-↗
Current-Voltage Analysis of a Tunnelling Emitter-Undoped Single Quantum Well Infrared Photodetector
The electrical behavior of a tunneling emitter-undoped single quantum well infrared photodetector (QWIP) structure was studied at 77 K.
current voltage quantum well infrared tunnelling e↗
Quantum Well Infrared Photodetector (QWIP) Focal Planes for Long Wave Imaging
In this paper, we discuss the development of very sensitive long wavelength infrared GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs) based on bound-to-quasibound intersubband transition, fabrication of light coupling schemes for efficient light coupling, and demonstration of several long wavelength infrared cameras based on QWIP focal plane arrays.
long wavelength infrared quantum well infrared pho↗
Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector
We demonstrate that SiO(sub 2) cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.
Bandgap shifting photodetector quantum well infrar↗
Comparison of Intersubband GaAs/AlGaAs Multiple Quantum Well Infrared Photodetectors on GaAs and GaAs-on-Si Subtrates
We have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi-insulating GaAs substrate.
response GaAs-on-Si substrate↗
10 - 16 mu broad-band Quantum Well Infrared Photodetector
A broad-band infrared detector, sensitive over a 10 - 16 mu m spectral range, based on GaAs/A1xGa1-xAs quantum wells grown by molecular beam epitaxy, has been demonstrated.
quantum well infrared photodetector↗
The effect of the strain relaxation in InAs/GaAs stacked quantum dots and multiple quantum wells on the Raman spectrum
Atomistic-level simulations of the Raman shift in InAs/GaAs multiple quantum well (MQW) and stacked quantum dot (SQD) structures as a function of interlayer separation are reporter.
phonons↗